insulating or semiconductive spacer

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CPC
H01F41/307

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties

Current Industry

H01F41/307insulating or semiconductive spacer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 12,167,701
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Minimal thickness synthetic antiferromagnetic (SAF) structure with...
- Patent number 11,930,717
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Grant
High retention storage layer using ultra-low RA MgO process in perp...
- Patent number 11,925,125
- Issue date Mar 5, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive sensor and fabrication method for a magnetoresisti...
- Patent number 11,892,526
- Issue date Feb 6, 2024
- Infineon Technologies AG
- Bernhard Endres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,805,658
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hui-Hsien Wei
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Seed layer for multilayer magnetic materials
- Patent number 11,672,182
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory (MRAM) device
- Patent number 11,665,970
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Whan-Kyun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 11,309,489
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
High retention storage layer using ultra-low RA MgO process in perp...
- Patent number 11,264,557
- Issue date Mar 1, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,189,658
- Issue date Nov 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hui-Hsien Wei
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Seed layer for multilayer magnetic materials
- Patent number 11,107,977
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory (MRAM) device
- Patent number 11,031,549
- Issue date Jun 8, 2021
- Samsung Electronics Co., Ltd.
- Whan-Kyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid oxide/metal cap layer for boron-free free layer
- Patent number 11,009,570
- Issue date May 18, 2021
- Samsung Electronics Co., Ltd.
- Xueti Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimal thickness synthetic antiferromagnetic (SAF) structure with...
- Patent number 10,868,235
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PSTTM device with multi-layered filter stack
- Patent number 10,847,714
- Issue date Nov 24, 2020
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance element with extended linear response to magnetic...
- Patent number 10,840,001
- Issue date Nov 17, 2020
- ALLEGRO MICROSYSTEMS, LLC
- Rémy Lassalle-Balier
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacturing a magnetoresistive random access memory device
- Patent number 10,784,442
- Issue date Sep 22, 2020
- Samsung Electronics Co., Ltd.
- Whan-Kyun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 10,763,428
- Issue date Sep 1, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PSTTM device with free magnetic layers coupled through a metal laye...
- Patent number 10,580,970
- Issue date Mar 3, 2020
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel magnetic resistance element and method for manufacturing same
- Patent number 10,559,748
- Issue date Feb 11, 2020
- TOHOKU UNIVERSITY
- Yasuo Ando
- G01 - MEASURING TESTING
Information Patent Grant
Electronic device and method for fabricating the same using treatme...
- Patent number 10,559,422
- Issue date Feb 11, 2020
- SK hynix Inc.
- Ga-Young Ha
- G01 - MEASURING TESTING
Information Patent Grant
Seed layer for multilayer magnetic materials
- Patent number 10,490,733
- Issue date Nov 26, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing magnetic tunneling junction element...
- Patent number 10,446,209
- Issue date Oct 15, 2019
- Samsung Semiconductor Inc.
- Steven M. Watts
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular magnetic tunnel junction devices with high thermal st...
- Patent number 10,431,733
- Issue date Oct 1, 2019
- The Arizona Board of Regents on behalf of the University of Arizona
- Weigang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque cell for magnetic random access memory
- Patent number 10,424,727
- Issue date Sep 24, 2019
- International Business Machines Corporation
- Michael C. Gaidis
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin transfer torque cell for magnetic random access memory
- Patent number 10,326,074
- Issue date Jun 18, 2019
- International Business Machines Corporation
- Michael C. Gaidis
- B82 - NANO-TECHNOLOGY
Information Patent Grant
PSTTM device with multi-layered filter stack
- Patent number 10,326,075
- Issue date Jun 18, 2019
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Grant
Minimal thickness synthetic antiferromagnetic (SAF) structure with...
- Patent number 10,193,056
- Issue date Jan 29, 2019
- Headway Technologies, Inc.
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with an improved tunnel barrier
- Patent number 10,002,973
- Issue date Jun 19, 2018
- Crocus Technology S.A.
- Ioan Lucian Prejbeanu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 9,842,988
- Issue date Dec 12, 2017
- Headway Technologies, Inc.
- Huanlong Liu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) IN...
- Publication number 20240381780
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Int...
- Publication number 20240379270
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Luc Thomas
- B24 - GRINDING POLISHING
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20230380182
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hui-Hsien WEI
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20220238798
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH RETENTION STORAGE LAYER USING ULTRA-LOW RA MgO PROCESS IN PERP...
- Publication number 20220149267
- Publication date May 12, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20220085102
- Publication date Mar 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hui-Hsien WEI
- B82 - NANO-TECHNOLOGY
Information Patent Application
Seed Layer for Multilayer Magnetic Materials
- Publication number 20210391533
- Publication date Dec 16, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE
- Publication number 20210296577
- Publication date Sep 23, 2021
- Samsung Electronics Co., Ltd.
- Whan-Kyun KIM
- G11 - INFORMATION STORAGE
Information Patent Application
Reduction of Barrier Resistance X Area (RA) Product and Protection...
- Publication number 20210234092
- Publication date Jul 29, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G01 - MEASURING TESTING
Information Patent Application
Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure With...
- Publication number 20210210674
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE
- Publication number 20200403153
- Publication date Dec 24, 2020
- Samsung Electronics Co., Ltd.
- Whan-Kyun KIM
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20200395534
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID OXIDE/METAL CAP LAYER FOR BORON-FREE FREE LAYER
- Publication number 20200158796
- Publication date May 21, 2020
- Samsung Electronics Co., Ltd.
- Xueti Tang
- G01 - MEASURING TESTING
Information Patent Application
Seed Layer for Multilayer Magnetic Materials
- Publication number 20200091417
- Publication date Mar 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSTTM DEVICE WITH MULTI-LAYERED FILTER STACK
- Publication number 20190288190
- Publication date Sep 19, 2019
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetoresistance Element With Extended Linear Response to Magnetic...
- Publication number 20190279804
- Publication date Sep 12, 2019
- Allegro Microsystems, LLC
- Rémy Lassalle-Balier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20190221738
- Publication date Jul 18, 2019
- International Business Machines Corporation
- MICHAEL C. GAIDIS
- B82 - NANO-TECHNOLOGY
Information Patent Application
Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with...
- Publication number 20190173003
- Publication date Jun 6, 2019
- HEADWAY TECHNOLOGIES, INC.
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Application
PSTTM DEVICE WITH FREE MAGNETIC LAYERS COUPLED THROUGH A METAL LAYE...
- Publication number 20180248114
- Publication date Aug 30, 2018
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Application
PSTTM DEVICE WITH MULTI-LAYERED FILTER STACK
- Publication number 20180240970
- Publication date Aug 23, 2018
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20180175287
- Publication date Jun 21, 2018
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20180114639
- Publication date Apr 26, 2018
- SK HYNIX INC.
- Ga-Young Ha
- G01 - MEASURING TESTING
Information Patent Application
SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20170338407
- Publication date Nov 23, 2017
- International Business Machines Corporation
- MICHAEL C. GAIDIS
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC ELEMENT AND METHOD OF FABRICATION THEREOF
- Publication number 20170279040
- Publication date Sep 28, 2017
- Agency for Science, Technology and Research
- Michael TRAN
- G11 - INFORMATION STORAGE
Information Patent Application
CPP Device with a Plurality of Metal Oxide Templates in a Confining...
- Publication number 20150170836
- Publication date Jun 18, 2015
- TDK Corporation
- Kunliang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A MAGNETIC TUNNEL JUNCTION
- Publication number 20140349416
- Publication date Nov 27, 2014
- Gyung-Min CHOI
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF
- Publication number 20140284592
- Publication date Sep 25, 2014
- Makoto NAGAMINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20140284737
- Publication date Sep 25, 2014
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20140284733
- Publication date Sep 25, 2014
- Daisuke WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL HAVING NONMAGNETIC FILAMENT CONTACT AND METHODS OF OPER...
- Publication number 20140264675
- Publication date Sep 18, 2014
- Micron Technology, Inc.
- Jun Liu
- B82 - NANO-TECHNOLOGY

insulating or semiconductive spacer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetic tunnel junction with low defect rate after high temperatur...

Minimal thickness synthetic antiferromagnetic (SAF) structure with...

High retention storage layer using ultra-low RA MgO process in perp...

Magnetoresistive sensor and fabrication method for a magnetoresisti...

Magnetic random access memory and manufacturing method thereof

Seed layer for multilayer magnetic materials

Magnetoresistive random access memory (MRAM) device

Magnetic tunnel junction with low defect rate after high temperatur...

High retention storage layer using ultra-low RA MgO process in perp...

Magnetic random access memory and manufacturing method thereof

Seed layer for multilayer magnetic materials

Magnetoresistive random access memory (MRAM) device

Hybrid oxide/metal cap layer for boron-free free layer

Minimal thickness synthetic antiferromagnetic (SAF) structure with...

PSTTM device with multi-layered filter stack

Magnetoresistance element with extended linear response to magnetic...

Method of manufacturing a magnetoresistive random access memory device

Magnetic tunnel junction with low defect rate after high temperatur...

PSTTM device with free magnetic layers coupled through a metal laye...

Tunnel magnetic resistance element and method for manufacturing same

Electronic device and method for fabricating the same using treatme...

Seed layer for multilayer magnetic materials

Method and system for providing magnetic tunneling junction element...

Perpendicular magnetic tunnel junction devices with high thermal st...

Spin transfer torque cell for magnetic random access memory

Spin transfer torque cell for magnetic random access memory

PSTTM device with multi-layered filter stack

Minimal thickness synthetic antiferromagnetic (SAF) structure with...

Magnetic tunnel junction with an improved tunnel barrier

Magnetic tunnel junction with low defect rate after high temperatur...

Patents Applicationslast 30 patents

METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) IN...

Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Int...

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

HIGH RETENTION STORAGE LAYER USING ULTRA-LOW RA MgO PROCESS IN PERP...

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

Seed Layer for Multilayer Magnetic Materials

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE

Reduction of Barrier Resistance X Area (RA) Product and Protection...

Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure With...

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

HYBRID OXIDE/METAL CAP LAYER FOR BORON-FREE FREE LAYER

Seed Layer for Multilayer Magnetic Materials

PSTTM DEVICE WITH MULTI-LAYERED FILTER STACK

Magnetoresistance Element With Extended Linear Response to Magnetic...

SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY

Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with...

PSTTM DEVICE WITH FREE MAGNETIC LAYERS COUPLED THROUGH A METAL LAYE...

PSTTM DEVICE WITH MULTI-LAYERED FILTER STACK

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME

SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC ELEMENT AND METHOD OF FABRICATION THEREOF

CPP Device with a Plurality of Metal Oxide Templates in a Confining...

METHOD FOR MANUFACTURING A MAGNETIC TUNNEL JUNCTION

MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF

MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF

MAGNETORESISTIVE ELEMENT

MEMORY CELL HAVING NONMAGNETIC FILAMENT CONTACT AND METHODS OF OPER...