large or giant magnetoresistive effects [GMR]

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CPC
G11B2005/3996

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G11B2005/3996large or giant magnetoresistive effects [GMR]

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 12,217,775
- Issue date Feb 4, 2025
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 12,211,524
- Issue date Jan 28, 2025
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive devices comprising a synthetic antiferromagnetic c...
- Patent number 12,207,563
- Issue date Jan 21, 2025
- Western Digital Technologies, Inc.
- Susumu Okamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Topological insulator based spin torque oscillator reader
- Patent number 12,125,508
- Issue date Oct 22, 2024
- Western Digital Technologies, Inc.
- Xiaoyong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Optimizing a current distribution in write heads for efficient ener...
- Patent number 12,094,497
- Issue date Sep 17, 2024
- Headway Technologies, Inc.
- Shehrin Sayed
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic flux guiding device with spin torque oscillator (STO) film...
- Patent number 12,068,008
- Issue date Aug 20, 2024
- Headway Technologies, Inc.
- Wenyu Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Offset correction in a voltage controlled magnetoresistive sensor
- Patent number 12,046,263
- Issue date Jul 23, 2024
- Infineon Technologies AG
- Bernhard Endres
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 12,040,115
- Issue date Jul 16, 2024
- TDK Corporation
- Kazuumi Inubushi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element containing Heusler alloy with addi...
- Patent number 11,967,348
- Issue date Apr 23, 2024
- TDK Corporation
- Katsuyuki Nakada
- G11 - INFORMATION STORAGE
Information Patent Grant
SOT reader using BiSb topological insulator
- Patent number 11,875,827
- Issue date Jan 16, 2024
- Western Digital Technologies, Inc.
- Quang Le
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic storage reader having a bridge to align magnetic moments
- Patent number 11,875,828
- Issue date Jan 16, 2024
- Seagate Technology LLC
- Victor B Sapozhnikov
- G11 - INFORMATION STORAGE
Information Patent Grant
Topological insulator based spin torque oscillator reader
- Patent number 11,783,853
- Issue date Oct 10, 2023
- Western Digital Technologies, Inc.
- Xiaoyong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 11,769,523
- Issue date Sep 26, 2023
- TDK Corporation
- Kazuumi Inubushi
- G11 - INFORMATION STORAGE
Information Patent Grant
Buffer layers and interlayers that promote BiSbx (012) alloy orient...
- Patent number 11,763,973
- Issue date Sep 19, 2023
- Western Digital Technologies, Inc.
- Quang Le
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,763,841
- Issue date Sep 19, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic flux guiding device with spin torque oscillator (STO) film...
- Patent number 11,568,891
- Issue date Jan 31, 2023
- Headway Technologies, Inc.
- Wenyu Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical junction to provide optimal transverse bias for dual free...
- Patent number 11,532,324
- Issue date Dec 20, 2022
- Western Digital Technologies, Inc.
- Ming Mao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element, magnetic sensor, reproducing head, and ma...
- Patent number 11,521,645
- Issue date Dec 6, 2022
- National Institute for Materials Science
- Kresna Bondan Fathoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Planar design for sensors in a dual free layer read head
- Patent number 11,514,934
- Issue date Nov 29, 2022
- Western Digital Technologies, Inc.
- Ming Mao
- G11 - INFORMATION STORAGE
Information Patent Grant
Read head having one or more antiferromagnetic layers below soft bi...
- Patent number 11,514,936
- Issue date Nov 29, 2022
- Western Digital Technologies, Inc.
- Quang Le
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked structure, magnetoresistive effect element, magnetic head,...
- Patent number 11,422,211
- Issue date Aug 23, 2022
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 11,410,689
- Issue date Aug 9, 2022
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional magnetic recording reader with dual free layer magn...
- Patent number 11,410,690
- Issue date Aug 9, 2022
- Western Digital Technologies, Inc.
- Chih-Ching Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Frequency sensor
- Patent number 11,385,269
- Issue date Jul 12, 2022
- INL-INTERNATIONAL IBERIAN NANOTECHNOLOGY LABORATORY
- Alex Jenkins
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Current-perpendicular-to-plane giant magnetoresistive element, prec...
- Patent number 11,328,743
- Issue date May 10, 2022
- National Institute for Materials Science
- Tomoya Nakatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow etched gaps or features in multi-period thin-film structures
- Patent number 11,222,676
- Issue date Jan 11, 2022
- Integrated Magnetoelectronics Corp
- Edward Wuori
- G11 - INFORMATION STORAGE
Information Patent Grant
Hard magnetic stabilized shield for double (2DMR) or triple (3DMR)...
- Patent number 11,217,274
- Issue date Jan 4, 2022
- Headway Technologies, Inc.
- Junjie Quan
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layer magnetoelectronic device
- Patent number 11,170,805
- Issue date Nov 9, 2021
- Deutsches Elektronen-Synchrotron DESY
- Kai Schlage
- G11 - INFORMATION STORAGE
Information Patent Grant
Transverse bias strength enhancement in dual free layer tunnel magn...
- Patent number 11,170,809
- Issue date Nov 9, 2021
- Western Digital Technologies, Inc.
- Ming Mao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,133,028
- Issue date Sep 28, 2021
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Optimizing A Current Distribution In Write Heads For Efficient Ener...
- Publication number 20250078862
- Publication date Mar 6, 2025
- HEADWAY TECHNOLOGIES, INC.
- Shehrin Sayed
- G11 - INFORMATION STORAGE
Information Patent Application
DFL TDMR Middle Shield Throat Height Control for Improved Stability
- Publication number 20250078864
- Publication date Mar 6, 2025
- Western Digital Technologies, Inc.
- Xiaoyong LIU
- G11 - INFORMATION STORAGE
Information Patent Application
Topological Insulator Based Spin Torque Oscillator Reader
- Publication number 20250014595
- Publication date Jan 9, 2025
- Western Digital Technologies, Inc.
- Xiaoyong LIU
- G11 - INFORMATION STORAGE
Information Patent Application
Non-localized Spin Valve Multi-Free-Layer Reader Hybridized with Sp...
- Publication number 20240428820
- Publication date Dec 26, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
Film and Method for BiSbX (012) Texture for SOT Devices
- Publication number 20240412759
- Publication date Dec 12, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) IN...
- Publication number 20240381780
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Flux Guiding Device With Spin Torque Oscillator (STO) Film...
- Publication number 20240371402
- Publication date Nov 7, 2024
- HEADWAY TECHNOLOGIES, INC.
- Wenyu Chen
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20240339255
- Publication date Oct 10, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20240266099
- Publication date Aug 8, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
Current-Perpendicular-to-Plane Giant Magneto-Resistive Element and...
- Publication number 20240186047
- Publication date Jun 6, 2024
- National Institute for Materials Science
- Yuichi FUJITA
- G11 - INFORMATION STORAGE
Information Patent Application
SOT READER WITH RECESSED SOT TOPOLOGICAL INSULATOR MATERIAL
- Publication number 20240144965
- Publication date May 2, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...
- Publication number 20240107893
- Publication date Mar 28, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
- Publication number 20240062777
- Publication date Feb 22, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Topological Insulator Based Spin Torque Oscillator Reader
- Publication number 20230419990
- Publication date Dec 28, 2023
- Western Digital Technologies, Inc.
- Xiaoyong LIU
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230386511
- Publication date Nov 30, 2023
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orient...
- Publication number 20230386721
- Publication date Nov 30, 2023
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
SOT Reader Using BiSb Topological Insulator
- Publication number 20230306993
- Publication date Sep 28, 2023
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orient...
- Publication number 20230047223
- Publication date Feb 16, 2023
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
- Publication number 20220328067
- Publication date Oct 13, 2022
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Element, Magnetic Sensor, Reproducing Head, and Ma...
- Publication number 20220005499
- Publication date Jan 6, 2022
- National Institute for Materials Science
- Kresna Bondan FATHONI
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20210383828
- Publication date Dec 9, 2021
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
- Publication number 20210043225
- Publication date Feb 11, 2021
- TDK Corporation
- Kazuumi INUBUSHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CURRENT-PERPENDICULAR-TO-PLANE GIANT MAGNETORESISTIVE ELEMENT, PREC...
- Publication number 20210020193
- Publication date Jan 21, 2021
- National Institute for Materials Science
- Tomoya NAKATANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Tapered Junction Shield for Self-Compensation of...
- Publication number 20200357431
- Publication date Nov 12, 2020
- HEADWAY TECHNOLOGIES, INC.
- Urmimala Roy
- G11 - INFORMATION STORAGE
Information Patent Application
NARROW ETCHED GAPS OR FEATURES IN MULTI-PERIOD THIN-FILM STRUCTURES
- Publication number 20200349992
- Publication date Nov 5, 2020
- INTEGRATED MAGNETOELECTRONICS CORP.
- Edward Wuori
- G11 - INFORMATION STORAGE
Information Patent Application
Tapered Junction Shield for Self-Compensation of Asymmetry with Inc...
- Publication number 20200321023
- Publication date Oct 8, 2020
- HEADWAY TECHNOLOGIES, INC.
- Urmimala Roy
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20200219532
- Publication date Jul 9, 2020
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hard Magnetic Stabilized Shield for Double (2DMR) or Triple (3DMR)...
- Publication number 20200176024
- Publication date Jun 4, 2020
- HEADWAY TECHNOLOGIES, INC.
- Junjie Quan
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Read Head Structure with Improved Bottom Shield Design for...
- Publication number 20200118588
- Publication date Apr 16, 2020
- HEADWAY TECHNOLOGIES, INC.
- Yan Wu
- G11 - INFORMATION STORAGE
Information Patent Application
Tapered Junction Shield for Self-Compensation of Asymmetry with Inc...
- Publication number 20190287556
- Publication date Sep 19, 2019
- HEADWAY TECHNOLOGIES, INC.
- Urmimala Roy
- G11 - INFORMATION STORAGE

large or giant magnetoresistive effects [GMR]

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetoresistance effect element and Heusler alloy

Magnetoresistance effect element

Magnetoresistive devices comprising a synthetic antiferromagnetic c...

Topological insulator based spin torque oscillator reader

Optimizing a current distribution in write heads for efficient ener...

Magnetic flux guiding device with spin torque oscillator (STO) film...

Offset correction in a voltage controlled magnetoresistive sensor

Magnetoresistance effect element

Magnetoresistance effect element containing Heusler alloy with addi...

SOT reader using BiSb topological insulator

Magnetic storage reader having a bridge to align magnetic moments

Topological insulator based spin torque oscillator reader

Magnetoresistance effect element and Heusler alloy

Buffer layers and interlayers that promote BiSbx (012) alloy orient...

Magnetoresistance effect element

Magnetic flux guiding device with spin torque oscillator (STO) film...

Vertical junction to provide optimal transverse bias for dual free...

Magnetoresistive element, magnetic sensor, reproducing head, and ma...

Planar design for sensors in a dual free layer read head

Read head having one or more antiferromagnetic layers below soft bi...

Stacked structure, magnetoresistive effect element, magnetic head,...

Magnetoresistance effect element and Heusler alloy

Two-dimensional magnetic recording reader with dual free layer magn...

Frequency sensor

Current-perpendicular-to-plane giant magnetoresistive element, prec...

Narrow etched gaps or features in multi-period thin-film structures

Hard magnetic stabilized shield for double (2DMR) or triple (3DMR)...

Multi-layer magnetoelectronic device

Transverse bias strength enhancement in dual free layer tunnel magn...

Magnetoresistance effect element

Patents Applicationslast 30 patents

Optimizing A Current Distribution In Write Heads For Efficient Ener...

DFL TDMR Middle Shield Throat Height Control for Improved Stability

Topological Insulator Based Spin Torque Oscillator Reader

Non-localized Spin Valve Multi-Free-Layer Reader Hybridized with Sp...

Film and Method for BiSbX (012) Texture for SOT Devices

METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) IN...

Magnetic Flux Guiding Device With Spin Torque Oscillator (STO) Film...

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

Current-Perpendicular-to-Plane Giant Magneto-Resistive Element and...

SOT READER WITH RECESSED SOT TOPOLOGICAL INSULATOR MATERIAL

Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...

MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY

Topological Insulator Based Spin Torque Oscillator Reader

MAGNETORESISTANCE EFFECT ELEMENT

Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orient...

SOT Reader Using BiSb Topological Insulator

Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orient...

MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY

Magnetoresistive Element, Magnetic Sensor, Reproducing Head, and Ma...

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY

CURRENT-PERPENDICULAR-TO-PLANE GIANT MAGNETORESISTIVE ELEMENT, PREC...

Method of Forming Tapered Junction Shield for Self-Compensation of...

NARROW ETCHED GAPS OR FEATURES IN MULTI-PERIOD THIN-FILM STRUCTURES

Tapered Junction Shield for Self-Compensation of Asymmetry with Inc...

MAGNETORESISTANCE EFFECT ELEMENT

Hard Magnetic Stabilized Shield for Double (2DMR) or Triple (3DMR)...

Magnetic Read Head Structure with Improved Bottom Shield Design for...

Tapered Junction Shield for Self-Compensation of Asymmetry with Inc...