Read using potential difference applied between cell electrodes

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GPHYSICS G11Information storage G11CSTATIC STORES

Current Industry

G11C2013/005Read using potential difference applied between cell electrodes

Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory circuit and method for reading memory circuit
- Patent number 12,198,759
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hengyuan Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory
- Patent number 12,185,554
- Issue date Dec 31, 2024
- Winbond Electronics Corp.
- Yasuhiro Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-referenced and regulated sensing solution for phase change mem...
- Patent number 12,176,030
- Issue date Dec 24, 2024
- Universite d'Aix-Marseille
- Jean-Michel Portal
- G11 - INFORMATION STORAGE
Information Patent Grant
Internal reference resistor for non-volatile memory
- Patent number 12,159,667
- Issue date Dec 3, 2024
- Micron Technology, Inc.
- Neil Petrie
- G11 - INFORMATION STORAGE
Information Patent Grant
Read and write circuit of three-dimensional phase-change memory
- Patent number 12,154,621
- Issue date Nov 26, 2024
- Huazhong University of Science & Technology
- Xingsheng Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and control device for semiconductor me...
- Patent number 12,148,468
- Issue date Nov 19, 2024
- POWER SPIN INC.
- Hiroshi Yoshida
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point array IHOLD read margin improvement
- Patent number 12,148,459
- Issue date Nov 19, 2024
- SanDisk Technologies LLC
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Grant
Reconfigurable computational memory device, operation method of the...
- Patent number 12,148,471
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for controlling gradual conductance change in...
- Patent number 12,125,527
- Issue date Oct 22, 2024
- Jun-sung Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-step pre-read for write operations in memory devices
- Patent number 12,106,803
- Issue date Oct 1, 2024
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell read operation techniques
- Patent number 12,094,533
- Issue date Sep 17, 2024
- Micron Technology, Inc.
- Riccardo Muzzetto
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells with asymmetrical electrode interfaces
- Patent number 12,082,513
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Access to a memory
- Patent number 12,073,880
- Issue date Aug 27, 2024
- Infineon Technologies AG
- Thomas Kern
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense circuit and high-speed memory structure incorporating the sen...
- Patent number 12,051,465
- Issue date Jul 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Chandrahasa Reddy Dinnipati
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method thereof
- Patent number 12,033,697
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Cheng Chiu
- G11 - INFORMATION STORAGE
Information Patent Grant
Auto-referenced memory cell read techniques
- Patent number 12,009,028
- Issue date Jun 11, 2024
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method applied with computing-in-memory
- Patent number 12,009,029
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Der Chih
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Correcting memory data using an error code and a memory test result
- Patent number 11,996,859
- Issue date May 28, 2024
- Amazon Technologies, Inc.
- Itai Avron
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory devices and methods of forming the same
- Patent number 11,978,510
- Issue date May 7, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Curtis Chun-I Hsieh
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for accessing resistive change elements operable as antifuses
- Patent number 11,972,830
- Issue date Apr 30, 2024
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method thereof
- Patent number 11,948,631
- Issue date Apr 2, 2024
- Samsung Electronics Co., Ltd.
- Tae Hui Na
- G11 - INFORMATION STORAGE
Information Patent Grant
Current references for memory cells
- Patent number 11,942,151
- Issue date Mar 26, 2024
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device for writing data and operating method thereof
- Patent number 11,935,592
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Chankyung Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device
- Patent number 11,915,754
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Neuromorphic computing device and method of designing the same
- Patent number 11,881,260
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Youngnam Hwang
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance crosspoint architecture
- Patent number 11,882,774
- Issue date Jan 23, 2024
- Micron Technology, Inc.
- Rajasekhar Venigalla
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-referenced and regulated sensing solution for phase change mem...
- Patent number 11,875,847
- Issue date Jan 16, 2024
- Universite d'Aix-Marseille
- Jean-Michel Portal
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for read operations using switched reference voltages
- Patent number 11,869,587
- Issue date Jan 9, 2024
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method thereof
- Patent number 11,862,243
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure for multiple sense amplifiers of memory device
- Patent number 11,854,617
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hiroki Noguchi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES
- Publication number 20250014641
- Publication date Jan 9, 2025
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20250006260
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- ISAO NARITAKE
- G11 - INFORMATION STORAGE
Information Patent Application
IN-MEMORY COMPUTATION DEVICE
- Publication number 20240412784
- Publication date Dec 12, 2024
- Macronix International Co., Ltd.
- Yu-Yu Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING READ OFFSET COMPENSATOR AND OFFSET REFERENC...
- Publication number 20240404597
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- Gyuseong KANG
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR READING A MULTI-LEVEL NON-VOLATILE MEMORY DEVICE, IN PAR...
- Publication number 20240386954
- Publication date Nov 21, 2024
- STMicroelectronics International N.V.
- Xavier LECOQ
- G11 - INFORMATION STORAGE
Information Patent Application
AUTO-REFERENCED MEMORY CELL READ TECHNIQUES
- Publication number 20240386956
- Publication date Nov 21, 2024
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE OF THE PHASE-CHANGE TYPE AND METHOD FOR READING SUCH...
- Publication number 20240386955
- Publication date Nov 21, 2024
- STMicroelectronics International N.V.
- Xavier LECOQ
- G11 - INFORMATION STORAGE
Information Patent Application
CROSSBAR CIRCUITS UTILIZING CURRENT-MODE DIGITAL-TO-ANALOG CONVERTERS
- Publication number 20240379140
- Publication date Nov 14, 2024
- TetraMem Inc.
- Hengfang Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20240321354
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Cheng CHIU
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEM AND METHOD APPLIED WITH COMPUTING-IN-MEMORY
- Publication number 20240290383
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Der CHIH
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTI-RAIL SENSE CIRCUIT WITH PRE-CHARGE TRANSISTORS AND MEMORY CIR...
- Publication number 20240282373
- Publication date Aug 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Siva Kumar Chinthu
- G11 - INFORMATION STORAGE
Information Patent Application
LOW RESISTANCE CROSSPOINT ARCHITECTURE
- Publication number 20240224825
- Publication date Jul 4, 2024
- Micron Technology, Inc.
- Rajasekhar Venigalla
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPORAL KERNEL DEVICES, TEMPORAL KERNEL COMPUTING SYSTEMS, AND MET...
- Publication number 20240215265
- Publication date Jun 27, 2024
- Seoul National University R&DB Foundation
- Cheol Seong Hwang
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT REFERENCES FOR MEMORY CELLS
- Publication number 20240203490
- Publication date Jun 20, 2024
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-REFERENCED AND REGULATED SENSING SOLUTION FOR PHASE CHANGE MEM...
- Publication number 20240153557
- Publication date May 9, 2024
- UNIVERSITE D'AIX-MARSEILLE
- Jean-Michel PORTAL
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20240153559
- Publication date May 9, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Yu-Der CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD FOR READING MEMORY CIRCUIT
- Publication number 20240144999
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hengyuan Lee
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE
- Publication number 20240127887
- Publication date Apr 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hiroki NOGUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, OPERATION METHOD OF THE MEMORY DEVICE AND SEMICONDUC...
- Publication number 20240062817
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL READ OPERATION TECHNIQUES
- Publication number 20240038301
- Publication date Feb 1, 2024
- Micron Technology, Inc.
- Riccardo Muzzetto
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE CIRCUIT AND HIGH-SPEED MEMORY STRUCTURE INCORPORATING THE SEN...
- Publication number 20240021243
- Publication date Jan 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Chandrahasa Reddy Dinnipati
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY-BASED NEUROMORPHIC DEVICE AND OPERATING METHOD THEREOF
- Publication number 20240021242
- Publication date Jan 18, 2024
- SK HYNIX INC.
- Sang Su Park
- G11 - INFORMATION STORAGE
Information Patent Application
INTERNAL REFERENCE RESISTOR FOR NON-VOLATILE MEMORY
- Publication number 20230395146
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Neil Petrie
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT REFERENCES FOR MEMORY CELLS
- Publication number 20230335191
- Publication date Oct 19, 2023
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20230260575
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Cheng CHIU
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-REFERENCED AND REGULATED SENSING SOLUTION FOR PHASE CHANGE MEM...
- Publication number 20230260574
- Publication date Aug 17, 2023
- UNIVERSITE D'AIX-MARSEILLE
- Jean-Michel PORTAL
- G11 - INFORMATION STORAGE
Information Patent Application
DATA READING CIRCUIT AND DATA READING CIRCUIT CONTROL METHOD
- Publication number 20230245700
- Publication date Aug 3, 2023
- Huawei Technologies Co., Ltd
- Ziyue Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE AMPLIFIER ARCHITECTURE FOR A NON-VOLATILE MEMORY STORING CODE...
- Publication number 20230245699
- Publication date Aug 3, 2023
- STMicroelectronics S.r.l.
- Fabio Enrico Carlo DISEGNI
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR STORING INFORMATION IN A CODED MANNER IN NON-VOLATILE ME...
- Publication number 20230223079
- Publication date Jul 13, 2023
- STMicroelectronics S.r.l.
- Alessandro TOMASONI
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE CONTROL TO ACCESS CURRENT OF MEMORY CELL DESCRIPTION
- Publication number 20230207004
- Publication date Jun 29, 2023
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE

Read using potential difference applied between cell electrodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory circuit and method for reading memory circuit

Resistive memory

Self-referenced and regulated sensing solution for phase change mem...

Internal reference resistor for non-volatile memory

Read and write circuit of three-dimensional phase-change memory

Semiconductor memory device and control device for semiconductor me...

Cross-point array IHOLD read margin improvement

Reconfigurable computational memory device, operation method of the...

Apparatus and method for controlling gradual conductance change in...

Multi-step pre-read for write operations in memory devices

Memory cell read operation techniques

Memory cells with asymmetrical electrode interfaces

Access to a memory

Sense circuit and high-speed memory structure incorporating the sen...

Memory device and operating method thereof

Auto-referenced memory cell read techniques

System and method applied with computing-in-memory

Correcting memory data using an error code and a memory test result

Memory devices and methods of forming the same

Methods for accessing resistive change elements operable as antifuses

Memory device and operating method thereof

Current references for memory cells

Resistive memory device for writing data and operating method thereof

Resistive random access memory device

Neuromorphic computing device and method of designing the same

Low resistance crosspoint architecture

Self-referenced and regulated sensing solution for phase change mem...

Techniques for read operations using switched reference voltages

Memory device and method thereof

Structure for multiple sense amplifiers of memory device

Patents Applicationslast 30 patents

MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES

SEMICONDUCTOR STORAGE DEVICE

IN-MEMORY COMPUTATION DEVICE

MEMORY DEVICE INCLUDING READ OFFSET COMPENSATOR AND OFFSET REFERENC...

METHOD FOR READING A MULTI-LEVEL NON-VOLATILE MEMORY DEVICE, IN PAR...

AUTO-REFERENCED MEMORY CELL READ TECHNIQUES

MEMORY DEVICE OF THE PHASE-CHANGE TYPE AND METHOD FOR READING SUCH...

CROSSBAR CIRCUITS UTILIZING CURRENT-MODE DIGITAL-TO-ANALOG CONVERTERS

MEMORY DEVICE AND OPERATING METHOD THEREOF

SYSTEM AND METHOD APPLIED WITH COMPUTING-IN-MEMORY

MULTI-RAIL SENSE CIRCUIT WITH PRE-CHARGE TRANSISTORS AND MEMORY CIR...

LOW RESISTANCE CROSSPOINT ARCHITECTURE

TEMPORAL KERNEL DEVICES, TEMPORAL KERNEL COMPUTING SYSTEMS, AND MET...

CURRENT REFERENCES FOR MEMORY CELLS

SELF-REFERENCED AND REGULATED SENSING SOLUTION FOR PHASE CHANGE MEM...

RESISTIVE RANDOM ACCESS MEMORY DEVICE

MEMORY CIRCUIT AND METHOD FOR READING MEMORY CIRCUIT

STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE

MEMORY DEVICE, OPERATION METHOD OF THE MEMORY DEVICE AND SEMICONDUC...

MEMORY CELL READ OPERATION TECHNIQUES

SENSE CIRCUIT AND HIGH-SPEED MEMORY STRUCTURE INCORPORATING THE SEN...

MEMORY-BASED NEUROMORPHIC DEVICE AND OPERATING METHOD THEREOF

INTERNAL REFERENCE RESISTOR FOR NON-VOLATILE MEMORY

CURRENT REFERENCES FOR MEMORY CELLS

MEMORY DEVICE AND OPERATING METHOD THEREOF

SELF-REFERENCED AND REGULATED SENSING SOLUTION FOR PHASE CHANGE MEM...

DATA READING CIRCUIT AND DATA READING CIRCUIT CONTROL METHOD

SENSE AMPLIFIER ARCHITECTURE FOR A NON-VOLATILE MEMORY STORING CODE...

METHOD FOR STORING INFORMATION IN A CODED MANNER IN NON-VOLATILE ME...

ADAPTIVE CONTROL TO ACCESS CURRENT OF MEMORY CELL DESCRIPTION