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Y10S117/906

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes non-coating apparatus therefor

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Y10S117/906Special atmosphere other than vacuum or inert

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Patents Grantslast 30 patents

Information Patent Grant
3-5 group compound semiconductor, process for producing the same, a...
- Patent number 7,229,493
- Issue date Jun 12, 2007
- Sumitomo Chemical Company, Limited
- Yoshihiko Tsuchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing nitrogen content in silicon carbide crystals by sublimatio...
- Patent number 7,220,313
- Issue date May 22, 2007
- Cree, Inc.
- George J. Fechko, Jr.
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing method of silicon carbide single crystals
- Patent number 7,147,714
- Issue date Dec 12, 2006
- Denso Corporation
- Masami Naito
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing method for calcium fluoride and calcium fluoride for...
- Patent number 6,811,606
- Issue date Nov 2, 2004
- Nikon Corporation
- Shigeru Sakuma
- G02 - OPTICS
Information Patent Grant
Manufacturing method of silicon carbide single crystals
- Patent number 6,746,787
- Issue date Jun 8, 2004
- Denso Corporation
- Masami Naito
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing silicon single crystal wafer and silicon singl...
- Patent number 6,413,310
- Issue date Jul 2, 2002
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making SiC single crystal and apparatus for making SiC si...
- Patent number 6,391,109
- Issue date May 21, 2002
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for calcium fluoride and calcium fluoride for...
- Patent number 6,332,922
- Issue date Dec 25, 2001
- Nikon Corporation
- Shigeru Sakuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for controlling the oxygen content in silicon wafers heav...
- Patent number 6,214,109
- Issue date Apr 10, 2001
- MEMC Electronic Materials, Inc.
- John D. Holder
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optical single crystal film process for producing the same and opti...
- Patent number 6,203,728
- Issue date Mar 20, 2001
- NGK Insulators, Ltd.
- Tatsuo Kawaguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making SiC single crystal and apparatus for making SiC si...
- Patent number 6,193,797
- Issue date Feb 27, 2001
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optical single crystal film, process for producing the same and opt...
- Patent number 6,051,062
- Issue date Apr 18, 2000
- NGK Insulators, Ltd.
- Tatsuo Kawaguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low vacuum vapor process for producing epitaxial layers
- Patent number 6,027,564
- Issue date Feb 22, 2000
- American Superconductor Corporation
- Leslie G. Fritzemeier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for controlling the oxygen content in silicon wafers heavil...
- Patent number 5,904,768
- Issue date May 18, 1999
- MEMC Electronic Materials, Inc.
- John D. Holder
- C30 - CRYSTAL GROWTH
Information Patent Grant
Oxygen precipitation control in Czochralski-grown silicon crystals
- Patent number 5,795,382
- Issue date Aug 18, 1998
- Texas Instruments Incorporated
- Weldon J. Bell
- C30 - CRYSTAL GROWTH
Information Patent Grant
System for oxygen precipitation control in silicon crystals
- Patent number 5,607,507
- Issue date Mar 4, 1997
- Texas Instruments Incorporated
- Weldon J. Bell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Oxygen precipitation control in czochralski-grown silicon cyrstals
- Patent number 5,474,020
- Issue date Dec 12, 1995
- Texas Instruments Incorporated
- Weldon J. Bell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming a thin film on a semiconductor device using an a...
- Patent number 5,327,624
- Issue date Jul 12, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Makoto Hirayama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus for growing a GaAs single crystal by pulling from GaAs melt
- Patent number 5,240,685
- Issue date Aug 31, 1993
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid-phase growth process of compound semiconductor
- Patent number 5,234,534
- Issue date Aug 10, 1993
- Shin-Etsu Handotai Co., Ltd.
- Munehisa Yanagisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process to obtain semi-insulating single crystalline epitaxial laye...
- Patent number 5,215,938
- Issue date Jun 1, 1993
- Centro de Investigacion y de Estudios Avanzados del I.P.N.
- Jaime M. Arroyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a doped ZnSe single crystal
- Patent number 5,169,799
- Issue date Dec 8, 1992
- Sumitomo Electric Industries, Ltd.
- Tsunemasa Taguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing rare earth doped orthosilicates(LN2-XREXSIO5)
- Patent number 5,164,041
- Issue date Nov 17, 1992
- AT&T Bell Laboratories
- George W. Berkstresser
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making a superconducting oxide comprising contacting a me...
- Patent number 5,100,870
- Issue date Mar 31, 1992
- AT&T Bell Laboratories
- Ho S. Chen
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Method for monocrystaline growth of dissociative compound semicondu...
- Patent number 5,091,043
- Issue date Feb 25, 1992
- Mitsubishi Materials Corporation
- Keiji Shirata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Capping technique for zone-melting recrystallization of insulated s...
- Patent number 5,066,610
- Issue date Nov 19, 1991
- Massachusetts Institute of Technology
- Chenson K. Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Monocrystal growing apparatus
- Patent number 5,059,401
- Issue date Oct 22, 1991
- Shin-Etsu Handotai Co., Ltd.
- Masataka Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing compound semiconductor single crystals usi...
- Patent number 5,041,186
- Issue date Aug 20, 1991
- Kabushiki Kaisha Toshiba
- Johji Nishio
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing thin compound oxide film and apparatus for...
- Patent number 5,016,563
- Issue date May 21, 1991
- Nippon Telegraph & Telephone Corporation
- Toshiaki Murakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing semiconductive single crystal
- Patent number 4,983,249
- Issue date Jan 8, 1991
- Production Engineering Association
- Tsunemasa Taguchi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Reducing nitrogen content in silicon carbide crystals by sublimatio...
- Publication number 20050022727
- Publication date Feb 3, 2005
- George J. Fechko
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method of silicon carbide single crystals
- Publication number 20040194693
- Publication date Oct 7, 2004
- Masami Naito
- C30 - CRYSTAL GROWTH
Information Patent Application
3-5 Group compound semiconductor, process for producing the same, a...
- Publication number 20030153168
- Publication date Aug 14, 2003
- Yoshihiko Tsuchida
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method of silicon carbide single crystals
- Publication number 20020069818
- Publication date Jun 13, 2002
- Masami Naito
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method for calcium fluoride and calcium fluoride for...
- Publication number 20020038625
- Publication date Apr 4, 2002
- NIKON CORPORATION
- Shigeru Sakuma
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of making SiC single crystal and apparatus for making SiC si...
- Publication number 20010000864
- Publication date May 10, 2001
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH

Special atmosphere other than vacuum or inert

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

3-5 group compound semiconductor, process for producing the same, a...

Reducing nitrogen content in silicon carbide crystals by sublimatio...

Manufacturing method of silicon carbide single crystals

Manufacturing method for calcium fluoride and calcium fluoride for...

Manufacturing method of silicon carbide single crystals

Method for producing silicon single crystal wafer and silicon singl...

Method of making SiC single crystal and apparatus for making SiC si...

Manufacturing method for calcium fluoride and calcium fluoride for...

Apparatus for controlling the oxygen content in silicon wafers heav...

Optical single crystal film process for producing the same and opti...

Method of making SiC single crystal and apparatus for making SiC si...

Optical single crystal film, process for producing the same and opt...

Low vacuum vapor process for producing epitaxial layers

Process for controlling the oxygen content in silicon wafers heavil...

Oxygen precipitation control in Czochralski-grown silicon crystals

System for oxygen precipitation control in silicon crystals

Oxygen precipitation control in czochralski-grown silicon cyrstals

Method for forming a thin film on a semiconductor device using an a...

Apparatus for growing a GaAs single crystal by pulling from GaAs melt

Liquid-phase growth process of compound semiconductor

Process to obtain semi-insulating single crystalline epitaxial laye...

Method for forming a doped ZnSe single crystal

Method of growing rare earth doped orthosilicates(LN2-XREXSIO5)

Method of making a superconducting oxide comprising contacting a me...

Method for monocrystaline growth of dissociative compound semicondu...

Capping technique for zone-melting recrystallization of insulated s...

Monocrystal growing apparatus

Method for manufacturing compound semiconductor single crystals usi...

Method of manufacturing thin compound oxide film and apparatus for...

Method for producing semiconductive single crystal

Patents Applicationslast 30 patents

Reducing nitrogen content in silicon carbide crystals by sublimatio...

Manufacturing method of silicon carbide single crystals

3-5 Group compound semiconductor, process for producing the same, a...

Manufacturing method of silicon carbide single crystals

Manufacturing method for calcium fluoride and calcium fluoride for...

Method of making SiC single crystal and apparatus for making SiC si...