using magneto-resistive devices or effects

Industry

CPC
G11B5/39

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Parent Industries

GPHYSICS G11Information storage G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER G11B5/00Recording by magnetisation or demagnetisation of a record carrier Reproducing by magnetic means Record carriers therefor

Current Industry

G11B5/39using magneto-resistive devices or effects

Industries

Patents Grantslast 30 patents

Information Patent Grant
Magnetic disk device with magnetic disk overwrite characteristics a...
- Patent number 11,984,143
- Issue date May 14, 2024
- Kabushiki Kaisha Toshiba
- Hiroshi Isokawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Direct measurement of magnetoresistive head resistance in a storage...
- Patent number 11,978,489
- Issue date May 7, 2024
- International Business Machines Corporation
- Jake Asmus
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element containing Heusler alloy with addi...
- Patent number 11,967,348
- Issue date Apr 23, 2024
- TDK Corporation
- Katsuyuki Nakada
- G11 - INFORMATION STORAGE
Information Patent Grant
Slider with bond pad arrangements
- Patent number 11,935,569
- Issue date Mar 19, 2024
- Seagate Technology LLC
- James Gary Wessel
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure integrated with magnetic tunneling junction
- Patent number 11,930,645
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Alexander Kalnitsky
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,927,649
- Issue date Mar 12, 2024
- TDK Corporation
- Shogo Yonemura
- G01 - MEASURING TESTING
Information Patent Grant
Spintronic devices with self-cooling function
- Patent number 11,925,120
- Issue date Mar 5, 2024
- Western Digital Technologies, Inc.
- Susumu Okamura
- G11 - INFORMATION STORAGE
Information Patent Grant
BiSbX (012) layers having increased operating temperatures for SOT...
- Patent number 11,908,496
- Issue date Feb 20, 2024
- Western Digital Technologies, Inc.
- Quang Le
- G11 - INFORMATION STORAGE
Information Patent Grant
Spiking neural network hardware based on magnetic-tunnel-junction l...
- Patent number 11,894,029
- Issue date Feb 6, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive bias control for magnetic recording head
- Patent number 11,887,635
- Issue date Jan 30, 2024
- Headway Technologies, Inc.
- Glen Garfunkel
- G11 - INFORMATION STORAGE
Information Patent Grant
SOT reader using BiSb topological insulator
- Patent number 11,875,827
- Issue date Jan 16, 2024
- Western Digital Technologies, Inc.
- Quang Le
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic storage reader having a bridge to align magnetic moments
- Patent number 11,875,828
- Issue date Jan 16, 2024
- Seagate Technology LLC
- Victor B Sapozhnikov
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,871,681
- Issue date Jan 9, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-local spin valve sensor for high linear density
- Patent number 11,862,208
- Issue date Jan 2, 2024
- Seagate Technology LLC
- Mark Thomas Kief
- G11 - INFORMATION STORAGE
Information Patent Grant
STT-SOT hybrid magnetoresistive element and manufacture thereof
- Patent number 11,854,589
- Issue date Dec 26, 2023
- Yimin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Linear sensor with dual spin valve element having reference layers...
- Patent number 11,852,699
- Issue date Dec 26, 2023
- ALLEGRO MICROSYSTEMS, LLC
- Rémy Lassalle-Balier
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-parallel coupled writer shields with stable magnetic domain co...
- Patent number 11,848,034
- Issue date Dec 19, 2023
- Western Digital Technologies, Inc.
- Yingjian Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Mechanism to shift the head span of a tape head at a wafer level
- Patent number 11,810,602
- Issue date Nov 7, 2023
- International Business Machines Corporation
- Icko E..T. Iben
- G11 - INFORMATION STORAGE
Information Patent Grant
Reader noise reduction using spin hall effects
- Patent number 11,804,242
- Issue date Oct 31, 2023
- Headway Technologies, Inc.
- Wenyu Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrodeposition of thermally stable alloys
- Patent number 11,798,583
- Issue date Oct 24, 2023
- Seagate Technology LLC
- Jie Gong
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
MTJ device performance by adding stress modulation layer to mtj dev...
- Patent number 11,785,864
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jesmin Haq
- G11 - INFORMATION STORAGE
Information Patent Grant
Topological insulator based spin torque oscillator reader
- Patent number 11,783,853
- Issue date Oct 10, 2023
- Western Digital Technologies, Inc.
- Xiaoyong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic elements of amorphous based dual free layer structures and...
- Patent number 11,776,725
- Issue date Oct 3, 2023
- Western Digital Technologies, Inc.
- Zhitao Diao
- G11 - INFORMATION STORAGE
Information Patent Grant
Heat-assisted magnetic recording (HAMR) write head with protective...
- Patent number 11,776,566
- Issue date Oct 3, 2023
- Western Digital Technologies, Inc.
- Nattaporn Khamnualthong
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
- Patent number 11,776,605
- Issue date Oct 3, 2023
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 11,769,523
- Issue date Sep 26, 2023
- TDK Corporation
- Kazuumi Inubushi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,763,841
- Issue date Sep 19, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Buffer layers and interlayers that promote BiSbx (012) alloy orient...
- Patent number 11,763,973
- Issue date Sep 19, 2023
- Western Digital Technologies, Inc.
- Quang Le
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic sensor
- Patent number 11,754,645
- Issue date Sep 12, 2023
- TDK Corporation
- Kazuya Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferrimagnetic Heusler compounds with high spin polarization
- Patent number 11,756,578
- Issue date Sep 12, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Two-Dimensional Magnetic Recording Read Head with TaOx Layer for Fl...
- Publication number 20240153533
- Publication date May 9, 2024
- Western Digital Technologies, Inc.
- Hongquan JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
Middle Shields Two-Dimensional Magnetic Recording Read Heads
- Publication number 20240144966
- Publication date May 2, 2024
- Western Digital Technologies, Inc.
- Ming MAO
- G11 - INFORMATION STORAGE
Information Patent Application
SOT READER WITH RECESSED SOT TOPOLOGICAL INSULATOR MATERIAL
- Publication number 20240144965
- Publication date May 2, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC SENSOR, MAGNETIC HEAD, AND MAGNETIC RECORDING DEVICE
- Publication number 20240135961
- Publication date Apr 25, 2024
- Kabushiki Kaisha Toshiba
- Tazumi NAGASAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC SENSOR, MAGNETIC HEAD, AND MAGNETIC RECORDING DEVICE
- Publication number 20240135967
- Publication date Apr 25, 2024
- Kabushiki Kaisha Toshiba
- Tazumi NAGASAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20240130247
- Publication date Apr 18, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G01 - MEASURING TESTING
Information Patent Application
LASER WRITING APPARATUS AND METHOD FOR PROGRAMMING MAGNETORESISTIVE...
- Publication number 20240118317
- Publication date Apr 11, 2024
- Multidimension Technology Co., Ltd
- James Geza Deak
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ELEMENT, AND H...
- Publication number 20240112695
- Publication date Apr 4, 2024
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...
- Publication number 20240112840
- Publication date Apr 4, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...
- Publication number 20240107893
- Publication date Mar 28, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Device Comprising A Synthetic Antiferromagnetic Co...
- Publication number 20240087785
- Publication date Mar 14, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adaptive Bias Control for Magnetic Recording Head
- Publication number 20240071414
- Publication date Feb 29, 2024
- HEADWAY TECHNOLOGIES, INC.
- Glen Garfunkel
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
- Publication number 20240062777
- Publication date Feb 22, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC SENSOR
- Publication number 20240045003
- Publication date Feb 8, 2024
- TDK Corporation
- Kazuya WATANABE
- G01 - MEASURING TESTING
Information Patent Application
Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler A...
- Publication number 20240032437
- Publication date Jan 25, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction Device and Method of Forming Same
- Publication number 20240021230
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Jhih Shen
- G11 - INFORMATION STORAGE
Information Patent Application
Reader Noise Reduction Using Spin Hall Effects
- Publication number 20240013805
- Publication date Jan 11, 2024
- HEADWAY TECHNOLOGIES, INC.
- Wenyu Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Highly Textured 001 BiSb And Materials for Making Same
- Publication number 20240006109
- Publication date Jan 4, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayer Structures For Magnetic Recording Devices To Facilitate...
- Publication number 20240005951
- Publication date Jan 4, 2024
- Western Digital Technologies, Inc.
- Ning SHI
- G11 - INFORMATION STORAGE
Information Patent Application
Doped BiSb (012) or Undoped BiSb (001) Topological Insulator with G...
- Publication number 20240005973
- Publication date Jan 4, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE ELEMENT AND STORAGE APPARATUS
- Publication number 20240005975
- Publication date Jan 4, 2024
- SONY GROUP CORPORATION
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Application
Topological Insulator Based Spin Torque Oscillator Reader
- Publication number 20230419990
- Publication date Dec 28, 2023
- Western Digital Technologies, Inc.
- Xiaoyong LIU
- G11 - INFORMATION STORAGE
Information Patent Application
MECHANISM TO SHIFT THE HEAD SPAN OF A TAPE HEAD AT A WAFER LEVEL
- Publication number 20230386509
- Publication date Nov 30, 2023
- International Business Machines Corporation
- Icko E.T. Iben
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230386511
- Publication date Nov 30, 2023
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orient...
- Publication number 20230386721
- Publication date Nov 30, 2023
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
MTJ DEVICE PERFORMANCE BY ADDING STRESS MODULATION LAYER TO MTJ DEV...
- Publication number 20230371398
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jesmin Haq
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, A...
- Publication number 20230371277
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230352070
- Publication date Nov 2, 2023
- Sony Semiconductor Solutions Corporation
- Hiroyuki UCHIDA
- G11 - INFORMATION STORAGE
Information Patent Application
SOT Reader Using BiSb Topological Insulator
- Publication number 20230306993
- Publication date Sep 28, 2023
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230292625
- Publication date Sep 14, 2023
- TDK Corporation
- Katsuyuki NAKADA
- G01 - MEASURING TESTING

using magneto-resistive devices or effects

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetic disk device with magnetic disk overwrite characteristics a...

Direct measurement of magnetoresistive head resistance in a storage...

Magnetoresistance effect element containing Heusler alloy with addi...

Slider with bond pad arrangements

Semiconductor structure integrated with magnetic tunneling junction

Magnetoresistance effect element

Spintronic devices with self-cooling function

BiSbX (012) layers having increased operating temperatures for SOT...

Spiking neural network hardware based on magnetic-tunnel-junction l...

Adaptive bias control for magnetic recording head

SOT reader using BiSb topological insulator

Magnetic storage reader having a bridge to align magnetic moments

Magnetoresistance effect element

Non-local spin valve sensor for high linear density

STT-SOT hybrid magnetoresistive element and manufacture thereof

Linear sensor with dual spin valve element having reference layers...

Anti-parallel coupled writer shields with stable magnetic domain co...

Mechanism to shift the head span of a tape head at a wafer level

Reader noise reduction using spin hall effects

Electrodeposition of thermally stable alloys

MTJ device performance by adding stress modulation layer to mtj dev...

Topological insulator based spin torque oscillator reader

Magnetic elements of amorphous based dual free layer structures and...

Heat-assisted magnetic recording (HAMR) write head with protective...

Storage element and storage apparatus

Magnetoresistance effect element and Heusler alloy

Magnetoresistance effect element

Buffer layers and interlayers that promote BiSbx (012) alloy orient...

Magnetic sensor

Ferrimagnetic Heusler compounds with high spin polarization

Patents Applicationslast 30 patents

Two-Dimensional Magnetic Recording Read Head with TaOx Layer for Fl...

Middle Shields Two-Dimensional Magnetic Recording Read Heads

SOT READER WITH RECESSED SOT TOPOLOGICAL INSULATOR MATERIAL

MAGNETIC SENSOR, MAGNETIC HEAD, AND MAGNETIC RECORDING DEVICE

MAGNETIC SENSOR, MAGNETIC HEAD, AND MAGNETIC RECORDING DEVICE

MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT

LASER WRITING APPARATUS AND METHOD FOR PROGRAMMING MAGNETORESISTIVE...

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ELEMENT, AND H...

Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Dev...

Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...

Magnetoresistive Device Comprising A Synthetic Antiferromagnetic Co...

Adaptive Bias Control for Magnetic Recording Head

MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY

MAGNETIC SENSOR

Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler A...

Magnetic Tunnel Junction Device and Method of Forming Same

Reader Noise Reduction Using Spin Hall Effects

Highly Textured 001 BiSb And Materials for Making Same

Multilayer Structures For Magnetic Recording Devices To Facilitate...

Doped BiSb (012) or Undoped BiSb (001) Topological Insulator with G...

STORAGE ELEMENT AND STORAGE APPARATUS

Topological Insulator Based Spin Torque Oscillator Reader

MECHANISM TO SHIFT THE HEAD SPAN OF A TAPE HEAD AT A WAFER LEVEL

MAGNETORESISTANCE EFFECT ELEMENT

Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orient...

MTJ DEVICE PERFORMANCE BY ADDING STRESS MODULATION LAYER TO MTJ DEV...

SEMICONDUCTOR DEVICE, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, A...

SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME

SOT Reader Using BiSb Topological Insulator

MAGNETORESISTANCE EFFECT ELEMENT