Verify correct writing whilst writing is in progress

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G11C2013/0066

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G11C2013/0066Verify correct writing whilst writing is in progress

Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory circuit structure and method of operating memory circuit str...
- Patent number 12,260,911
- Issue date Mar 25, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Xiaoxin Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Set-while-verify circuit and reset-while verify circuit for resisti...
- Patent number 11,646,078
- Issue date May 9, 2023
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Random code generator with non-volatile memory
- Patent number 11,416,416
- Issue date Aug 16, 2022
- eMemory Technology Inc.
- Tsung-Mu Lai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive random access memory device
- Patent number 11,232,836
- Issue date Jan 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Writing multiple levels in a phase change memory
- Patent number 11,152,063
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory systems and memory programming methods
- Patent number 11,024,378
- Issue date Jun 1, 2021
- Micron Technology , Inc.
- Emiliano Faraoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Data write-in method and non-volatile memory
- Patent number 11,011,231
- Issue date May 18, 2021
- Winbond Electronics Corp.
- Ping-Kun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Writing multiple levels in a phase change memory
- Patent number 10,998,045
- Issue date May 4, 2021
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Grant
Writing multiple levels in a phase change memory
- Patent number 10,943,658
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory apparatus and method for writing data thereof
- Patent number 10,937,495
- Issue date Mar 2, 2021
- Winbond Electronics Corp.
- He-Hsuan Chao
- G11 - INFORMATION STORAGE
Information Patent Grant
Writing multiple levels in a phase change memory
- Patent number 10,937,496
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory systems and memory programming methods
- Patent number 10,937,493
- Issue date Mar 2, 2021
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device
- Patent number 10,930,347
- Issue date Feb 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and electronic circuit for verifying operation performed by...
- Patent number 10,910,051
- Issue date Feb 2, 2021
- Winbond Electronics Corp.
- Koying Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Real-time update method for a differential memory, differential mem...
- Patent number 10,824,417
- Issue date Nov 3, 2020
- STMicroelectronics S.R.L.
- Fabio Enrico Carlo Disegni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods, articles, and devices for pulse adjustments to program a m...
- Patent number 10,803,938
- Issue date Oct 13, 2020
- Micron Technology, Inc.
- Alessio Spessot
- G11 - INFORMATION STORAGE
Information Patent Grant
Writing multiple levels in a phase change memory
- Patent number 10,762,959
- Issue date Sep 1, 2020
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Grant
Architectures and layouts for an array of resistive random access m...
- Patent number 10,755,779
- Issue date Aug 25, 2020
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device
- Patent number 10,726,918
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Writing multiple levels in a phase change memory
- Patent number 10,692,576
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-terminal metastable symmetric zero-volt battery memristive de...
- Patent number 10,651,379
- Issue date May 12, 2020
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory system and operating method thereof
- Patent number 10,629,251
- Issue date Apr 21, 2020
- SK Hynix Inc.
- Sang-Gyu Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Writing multiple levels in a phase change memory
- Patent number 10,566,057
- Issue date Feb 18, 2020
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device
- Patent number 10,546,638
- Issue date Jan 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Writing multiple levels in a phase change memory
- Patent number 10,535,403
- Issue date Jan 14, 2020
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory (RRAM) device, write verify method a...
- Patent number 10,453,529
- Issue date Oct 22, 2019
- Winbond Electronics Corp.
- Koying Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods, articles, and devices for pulse adjustment to program a me...
- Patent number 10,431,302
- Issue date Oct 1, 2019
- Micron Technology, Inc.
- Alessio Spessot
- G11 - INFORMATION STORAGE
Information Patent Grant
Writing multiple levels in a phase change memory
- Patent number 10,424,375
- Issue date Sep 24, 2019
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 10,403,358
- Issue date Sep 3, 2019
- TOSHIBA MEMORY CORPORATION
- Naoki Shimizu
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory apparatus and verification write method thereof...
- Patent number 10,402,098
- Issue date Sep 3, 2019
- SK hynix Inc.
- Jun Ho Cheon
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CIRCUIT STRUCTURE AND METHOD OF OPERATING MEMORY CIRCUIT STR...
- Publication number 20230368838
- Publication date Nov 16, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Xiaoxin Xu
- G11 - INFORMATION STORAGE
Information Patent Application
Set-While-Verify Circuit And Reset-While Verify Circuit For Resisti...
- Publication number 20210257023
- Publication date Aug 19, 2021
- Silicon Storage Technology, Inc.
- HIEU VAN TRAN
- G11 - INFORMATION STORAGE
Information Patent Application
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20210183444
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Application
DATA WRITE-IN METHOD AND NON-VOLATILE MEMORY
- Publication number 20210074356
- Publication date Mar 11, 2021
- WINBOND ELECTRONICS CORP.
- Ping-Kun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY APPARATUS AND METHOD FOR WRITING DATA THEREOF
- Publication number 20210005255
- Publication date Jan 7, 2021
- WINBOND ELECTRONICS CORP.
- He-Hsuan Chao
- G11 - INFORMATION STORAGE
Information Patent Application
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20200152266
- Publication date May 14, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Application
WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY
- Publication number 20200075096
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Application
WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY
- Publication number 20200075097
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS, ARTICLES, AND DEVICES FOR PULSE ADJUSTMENTS TO PROGRAM A M...
- Publication number 20200035298
- Publication date Jan 30, 2020
- Micron Technology, Inc.
- Alessio Spessot
- G11 - INFORMATION STORAGE
Information Patent Application
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20200027506
- Publication date Jan 23, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Application
WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY
- Publication number 20190355417
- Publication date Nov 21, 2019
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Application
WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY
- Publication number 20190355416
- Publication date Nov 21, 2019
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY APPARATUS AND VERIFICATION WRITE METHOD THEREOF...
- Publication number 20190347004
- Publication date Nov 14, 2019
- SK HYNIX INC.
- Jun Ho CHEON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY
- Publication number 20190267086
- Publication date Aug 29, 2019
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Application
WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY
- Publication number 20190267087
- Publication date Aug 29, 2019
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS, ARTICLES, AND DEVICES FOR PULSE ADJUSTMENT TO PROGRAM A ME...
- Publication number 20190108881
- Publication date Apr 11, 2019
- Micron Technology, Inc.
- Alessio Spessot
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20190080757
- Publication date Mar 14, 2019
- Toshiba Memory Corporation
- Naoki SHIMIZU
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Systems and Memory Programming Methods
- Publication number 20190074060
- Publication date Mar 7, 2019
- Micron Technology, Inc.
- Emiliano Faraoni
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Systems and Memory Programming Methods
- Publication number 20190066784
- Publication date Feb 28, 2019
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY TRANSITION MONITORING
- Publication number 20180350434
- Publication date Dec 6, 2018
- INFINEON TECHNOLOGIES AG
- Ulrich Backhausen
- G01 - MEASURING TESTING
Information Patent Application
WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY
- Publication number 20180277209
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Application
WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY
- Publication number 20180277210
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Application
WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY
- Publication number 20180068725
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Chung H. Lam
- G11 - INFORMATION STORAGE
Information Patent Application
DATA-WRITE DEVICE FOR RESISTANCE-CHANGE MEMORY ELEMENT
- Publication number 20170365338
- Publication date Dec 21, 2017
- TOHOKU UNIVERSITY
- Takahiro Hanyu
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS, ARTICLES, AND DEVICES FOR PULSE ADJUSTMENT TO PROGRAM A ME...
- Publication number 20170345495
- Publication date Nov 30, 2017
- Micron Technology, Inc.
- Alessio Spessot
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Systems and Memory Programming Methods
- Publication number 20170229175
- Publication date Aug 10, 2017
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD FOR RESISTIVE MEMORY CELL
- Publication number 20170206960
- Publication date Jul 20, 2017
- Macronix International Co., Ltd.
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE AND DRIVING METHOD THEREOF
- Publication number 20170069379
- Publication date Mar 9, 2017
- KABUSHIKI KAISHA TOSHIBA
- Takashi MAEDA
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE RANDOM ACCESS MEMORY, OPERATING METHOD THEREOF AND OPERA...
- Publication number 20160372195
- Publication date Dec 22, 2016
- Macronix International Co., Ltd.
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS, ARTICLES AND DEVICES FOR PULSE ADJUSTMENTS TO PROGRAM A ME...
- Publication number 20160172030
- Publication date Jun 16, 2016
- Micron Technology, Inc.
- Alessio Spessot
- G11 - INFORMATION STORAGE

Verify correct writing whilst writing is in progress

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory circuit structure and method of operating memory circuit str...

Set-while-verify circuit and reset-while verify circuit for resisti...

Random code generator with non-volatile memory

Resistive random access memory device

Writing multiple levels in a phase change memory

Memory systems and memory programming methods

Data write-in method and non-volatile memory

Writing multiple levels in a phase change memory

Writing multiple levels in a phase change memory

Resistive memory apparatus and method for writing data thereof

Writing multiple levels in a phase change memory

Memory systems and memory programming methods

Resistive random access memory device

Method and electronic circuit for verifying operation performed by...

Real-time update method for a differential memory, differential mem...

Methods, articles, and devices for pulse adjustments to program a m...

Writing multiple levels in a phase change memory

Architectures and layouts for an array of resistive random access m...

Resistive random access memory device

Writing multiple levels in a phase change memory

Three-terminal metastable symmetric zero-volt battery memristive de...

Semiconductor memory system and operating method thereof

Writing multiple levels in a phase change memory

Resistive random access memory device

Writing multiple levels in a phase change memory

Resistive random access memory (RRAM) device, write verify method a...

Methods, articles, and devices for pulse adjustment to program a me...

Writing multiple levels in a phase change memory

Semiconductor memory device

Nonvolatile memory apparatus and verification write method thereof...

Patents Applicationslast 30 patents

MEMORY CIRCUIT STRUCTURE AND METHOD OF OPERATING MEMORY CIRCUIT STR...

Set-While-Verify Circuit And Reset-While Verify Circuit For Resisti...

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

DATA WRITE-IN METHOD AND NON-VOLATILE MEMORY

RESISTIVE MEMORY APPARATUS AND METHOD FOR WRITING DATA THEREOF

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY

WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY

METHODS, ARTICLES, AND DEVICES FOR PULSE ADJUSTMENTS TO PROGRAM A M...

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY

WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY

NONVOLATILE MEMORY APPARATUS AND VERIFICATION WRITE METHOD THEREOF...

WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY

WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY

METHODS, ARTICLES, AND DEVICES FOR PULSE ADJUSTMENT TO PROGRAM A ME...

SEMICONDUCTOR MEMORY DEVICE

Memory Systems and Memory Programming Methods

Memory Systems and Memory Programming Methods

RESISTIVE MEMORY TRANSITION MONITORING

WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY

WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY

WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY

DATA-WRITE DEVICE FOR RESISTANCE-CHANGE MEMORY ELEMENT

METHODS, ARTICLES, AND DEVICES FOR PULSE ADJUSTMENT TO PROGRAM A ME...

Memory Systems and Memory Programming Methods

MEMORY DEVICE AND OPERATING METHOD FOR RESISTIVE MEMORY CELL

SEMICONDUCTOR STORAGE DEVICE AND DRIVING METHOD THEREOF

RESISTANCE RANDOM ACCESS MEMORY, OPERATING METHOD THEREOF AND OPERA...

METHODS, ARTICLES AND DEVICES FOR PULSE ADJUSTMENTS TO PROGRAM A ME...