with exchange coupling adjustment of magnetic film pairs

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CPC
H01F41/303

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties

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H01F41/303with exchange coupling adjustment of magnetic film pairs

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive stack/structure and methods therefor
- Patent number 12,137,616
- Issue date Nov 5, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magneto-ionic device with a solid state proton pump and methods for...
- Patent number 10,991,874
- Issue date Apr 27, 2021
- Massachusetts Institute of Technology
- Aik Jun Tan
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Magnetoresistive stack/structure and methods therefor
- Patent number 10,811,597
- Issue date Oct 20, 2020
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PSTTM device with bottom electrode interface material
- Patent number 10,340,445
- Issue date Jul 2, 2019
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayer structure for reducing film roughness in magnetic devices
- Patent number 10,115,892
- Issue date Oct 30, 2018
- Headway Technologies, Inc.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Top electrode dome formation
- Patent number 9,905,282
- Issue date Feb 27, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Wanbing Yi
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayer magnetic storage element and storage device
- Patent number 9,847,161
- Issue date Dec 19, 2017
- Sony Corporation
- Hiroyuki Ohmori
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Electric field ferromagnetic resonance excitation method and magnet...
- Patent number 9,460,769
- Issue date Oct 4, 2016
- National Institute of Advanced Industrial Science and Technology
- Takayuki Nozaki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Free layer with out-of-plane anisotropy for magnetic device applica...
- Patent number 9,437,268
- Issue date Sep 6, 2016
- Headway Technologies, Inc.
- Yu-Jen Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element with oxygen getting layer having enhanced...
- Patent number 9,431,601
- Issue date Aug 30, 2016
- Crocus Technology S.A.
- Sebastien Bandiera
- G11 - INFORMATION STORAGE
Information Patent Grant
Free layer with out-of-plane anisotropy for magnetic device applica...
- Patent number 9,252,710
- Issue date Feb 2, 2016
- Headway Technologies, Inc.
- Yu-Jen Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive effect element, magnetic memory, and magnetoresist...
- Patent number 9,166,065
- Issue date Oct 20, 2015
- Kabushiki Kaisha Toshiba
- Yuichi Ohsawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Composite free layer within magnetic tunnel junction for MRAM appli...
- Patent number 9,159,908
- Issue date Oct 13, 2015
- Headway Technologies, Inc.
- Wei Cao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
MR enhancing layer (MREL) for spintronic devices
- Patent number 9,147,834
- Issue date Sep 29, 2015
- Headway Technologies, Inc.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Storage element and storage device
- Patent number 9,093,211
- Issue date Jul 28, 2015
- Sony Corporation
- Hiroyuki Ohmori
- B82 - NANO-TECHNOLOGY
Information Patent Grant
MR enhancing layer (MREL) for spintronic devices
- Patent number 9,034,662
- Issue date May 19, 2015
- Headway Technologies, Inc.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Varyinig morphology in magnetic sensor sub-layers
- Patent number 9,036,308
- Issue date May 19, 2015
- Seagate Technology LLC
- Mark William Covington
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic element with improved out-of-plane anisotropy for spintron...
- Patent number 9,006,704
- Issue date Apr 14, 2015
- Headway Technologies, Inc.
- Guenole Jan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunnel barrier sensor with multilayer structure
- Patent number 8,929,035
- Issue date Jan 6, 2015
- Kabushiki Kaisha Toshiba
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance device including layered ferromagnetic structure,...
- Patent number 8,865,326
- Issue date Oct 21, 2014
- NEC Corporation
- Yoshiyuki Fukumoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic element with enhanced coupling portion
- Patent number 8,705,212
- Issue date Apr 22, 2014
- Seagate Technology LLC
- Jason Bryce Gadbois
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing magnetoresistive element
- Patent number 8,685,491
- Issue date Apr 1, 2014
- Kabushiki Kaisha Toshiba
- Akihiko Takeo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic stack with oxide to reduce switching current
- Patent number 8,686,524
- Issue date Apr 1, 2014
- Seagate Technology LLC
- Xiaohua Lou
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Flash memory with nano-pillar charge trap
- Patent number 8,687,418
- Issue date Apr 1, 2014
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for making a current-perpendicular-to-the-plane (CPP) magnet...
- Patent number 8,617,644
- Issue date Dec 31, 2013
- HGST Netherlands B.V.
- Matthew J. Carey
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell with lateral pinning
- Patent number 8,541,247
- Issue date Sep 24, 2013
- Seagate Technology LLC
- Haiwen Xi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic memory element and storage device using the same
- Patent number 8,514,617
- Issue date Aug 20, 2013
- Fuji Electric Co., Ltd.
- Michiya Yamada
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction having coherent tunneling structure
- Patent number 8,513,752
- Issue date Aug 20, 2013
- Seagate Technology LLC
- Xilin Peng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-volatile magnetic memory element with graded layer
- Patent number 8,498,150
- Issue date Jul 30, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-volatile magnetic memory element with graded layer
- Patent number 8,498,148
- Issue date Jul 30, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic...
- Publication number 20220199310
- Publication date Jun 23, 2022
- GEORGETOWN UNIVERSITY
- Kai Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR
- Publication number 20190355897
- Publication date Nov 21, 2019
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20190140168
- Publication date May 9, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20190088866
- Publication date Mar 21, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE DEVICE INCLUDING LAYERED FERROMAGNETIC STRUCTURE,...
- Publication number 20140346625
- Publication date Nov 27, 2014
- NEC Corporation
- Yoshiyuki Fukumoto
- B82 - NANO-TECHNOLOGY
Information Patent Application
MR Enhancing Layer (MREL) For Spintronic Devices
- Publication number 20140220385
- Publication date Aug 7, 2014
- HEADWAY TECHNOLOGIES, INC.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MR Enhancing Layer (MREL) For Spintronic Devices
- Publication number 20140220708
- Publication date Aug 7, 2014
- HEADWAY TECHNOLOGIES, INC.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT
- Publication number 20140153139
- Publication date Jun 5, 2014
- Kabushiki Kaisha Toshiba
- Akihiko TAKEO
- B82 - NANO-TECHNOLOGY
Information Patent Application
Free Layer with Out-of-Plane Anisotropy for Magnetic Device Applica...
- Publication number 20140145792
- Publication date May 29, 2014
- HEADWAY TECHNOLOGIES, INC.
- Yu-Jen Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNET...
- Publication number 20130236639
- Publication date Sep 12, 2013
- Matthew J. Carey
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
- Publication number 20130099338
- Publication date Apr 25, 2013
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G01 - MEASURING TESTING
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20130088914
- Publication date Apr 11, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20130087872
- Publication date Apr 11, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20130087869
- Publication date Apr 11, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20130087870
- Publication date Apr 11, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20130088915
- Publication date Apr 11, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20130087871
- Publication date Apr 11, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Varyinig Morphology in Magnetic Sensor Sub-Layers
- Publication number 20130071692
- Publication date Mar 21, 2013
- SEAGATE TECHNOLOGY LLC
- Mark William Covington
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND MAGNETORESIST...
- Publication number 20130069182
- Publication date Mar 21, 2013
- Yuichi OHSAWA
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNET...
- Publication number 20130064971
- Publication date Mar 14, 2013
- Matthew J. Carey
- B82 - NANO-TECHNOLOGY
Information Patent Application
Embedded Magnetic Random Access Memory (MRAM)
- Publication number 20130017627
- Publication date Jan 17, 2013
- Avalanche Technology, Inc.
- Parviz KESHTBOD
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE
- Publication number 20130001721
- Publication date Jan 3, 2013
- Seagate Technology LLC
- Xilin Peng
- B82 - NANO-TECHNOLOGY
Information Patent Application
TUNNELING MAGNETORESISTANCE (TMR) READ SENSOR WITH LOW-CONTACT-RESI...
- Publication number 20120299132
- Publication date Nov 29, 2012
- Hitachi Global Storage Technologies Netherlands B.V.
- Tsann Lin
- G01 - MEASURING TESTING
Information Patent Application
STORAGE ELEMENT AND STORAGE DEVICE
- Publication number 20120287696
- Publication date Nov 15, 2012
- SONY CORPORATION
- Hiroyuki Ohmori
- G11 - INFORMATION STORAGE
Information Patent Application
Composite free layer within magnetic tunnel junction for MRAM appli...
- Publication number 20120280337
- Publication date Nov 8, 2012
- MagIC Technologies, Inc.
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Element With Enhanced Coupling Portion
- Publication number 20120268846
- Publication date Oct 25, 2012
- Seagate Technology LLC
- Jason Bryce Gadbois
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC STACK WITH OXIDE TO REDUCE SWITCHING CURRENT
- Publication number 20120241886
- Publication date Sep 27, 2012
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20120230095
- Publication date Sep 13, 2012
- Avalanche Technology, Inc.
- Rajiv Yadav RANJAN
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE
- Publication number 20120217598
- Publication date Aug 30, 2012
- Seagate Technology LLC
- Xilin Peng
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic element with improved out-of-plane anisotropy for spintron...
- Publication number 20120205758
- Publication date Aug 16, 2012
- MagIC Technologies, Inc.
- Guenole Jan
- G11 - INFORMATION STORAGE

with exchange coupling adjustment of magnetic film pairs

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetoresistive stack/structure and methods therefor

Magneto-ionic device with a solid state proton pump and methods for...

Magnetoresistive stack/structure and methods therefor

PSTTM device with bottom electrode interface material

Multilayer structure for reducing film roughness in magnetic devices

Top electrode dome formation

Multilayer magnetic storage element and storage device

Electric field ferromagnetic resonance excitation method and magnet...

Free layer with out-of-plane anisotropy for magnetic device applica...

Magnetoresistive element with oxygen getting layer having enhanced...

Free layer with out-of-plane anisotropy for magnetic device applica...

Magnetoresistive effect element, magnetic memory, and magnetoresist...

Composite free layer within magnetic tunnel junction for MRAM appli...

MR enhancing layer (MREL) for spintronic devices

Storage element and storage device

MR enhancing layer (MREL) for spintronic devices

Varyinig morphology in magnetic sensor sub-layers

Magnetic element with improved out-of-plane anisotropy for spintron...

Tunnel barrier sensor with multilayer structure

Magnetoresistance device including layered ferromagnetic structure,...

Magnetic element with enhanced coupling portion

Method of manufacturing magnetoresistive element

Magnetic stack with oxide to reduce switching current

Flash memory with nano-pillar charge trap

Method for making a current-perpendicular-to-the-plane (CPP) magnet...

Non-volatile memory cell with lateral pinning

Magnetic memory element and storage device using the same

Magnetic tunnel junction having coherent tunneling structure

Non-volatile magnetic memory element with graded layer

Non-volatile magnetic memory element with graded layer

Patents Applicationslast 30 patents

Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic...

MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

MAGNETORESISTANCE DEVICE INCLUDING LAYERED FERROMAGNETIC STRUCTURE,...

MR Enhancing Layer (MREL) For Spintronic Devices

MR Enhancing Layer (MREL) For Spintronic Devices

METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT

Free Layer with Out-of-Plane Anisotropy for Magnetic Device Applica...

METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNET...

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

Varyinig Morphology in Magnetic Sensor Sub-Layers

MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND MAGNETORESIST...

METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNET...

Embedded Magnetic Random Access Memory (MRAM)

MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE

TUNNELING MAGNETORESISTANCE (TMR) READ SENSOR WITH LOW-CONTACT-RESI...

STORAGE ELEMENT AND STORAGE DEVICE

Composite free layer within magnetic tunnel junction for MRAM appli...

Magnetic Element With Enhanced Coupling Portion

MAGNETIC STACK WITH OXIDE TO REDUCE SWITCHING CURRENT

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE

Magnetic element with improved out-of-plane anisotropy for spintron...