Write by generating heat in the surroundings of the memory material

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Patents Grantslast 30 patents

Information Patent Grant
Phase-change memory cell
- Patent number 12,114,580
- Issue date Oct 8, 2024
- Paolo Giuseppe Cappelletti
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change material-based XOR logic gates
- Patent number 12,058,943
- Issue date Aug 6, 2024
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Electroforming process using an inversion-invariant linear ECC, and...
- Patent number 12,046,284
- Issue date Jul 23, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Bastien Giraud
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory circuit comprising a plurality of 1T1R memory cells
- Patent number 12,033,696
- Issue date Jul 9, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Olivier Billoint
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for initializing resistive memory devices by applying vo...
- Patent number 12,027,206
- Issue date Jul 2, 2024
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Distinct chip identifier sequence utilizing unclonable characterist...
- Patent number 11,967,376
- Issue date Apr 23, 2024
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of controlling PCRAM devices in single-level-cell (SLC) and...
- Patent number 11,942,146
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device and forming method thereof with improved fo...
- Patent number 11,915,749
- Issue date Feb 27, 2024
- Ememory Technology Inc.
- I-Lang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance change device and storage device
- Patent number 11,917,930
- Issue date Feb 27, 2024
- Kioxia Corporation
- Takao Kosaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile phase change material logic device
- Patent number 11,915,751
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Grant
2T-1R architecture for resistive ram
- Patent number 11,908,515
- Issue date Feb 20, 2024
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage device having a resistance change memory element and writin...
- Patent number 11,877,525
- Issue date Jan 16, 2024
- Kioxia Corporation
- Takayuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
PCRAM analog programming by a gradual reset cooling step
- Patent number 11,823,741
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jau-Yi Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory with conductive bridge filament
- Patent number 11,805,714
- Issue date Oct 31, 2023
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Cleaning memory blocks using multiple types of write operations
- Patent number 11,763,887
- Issue date Sep 19, 2023
- Micron Technology, Inc.
- Nicola Del Gatto
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 11,735,260
- Issue date Aug 22, 2023
- Winbond Electronics Corp.
- Yasuhiro Tomita
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically formed memory array using single element materials
- Patent number 11,716,861
- Issue date Aug 1, 2023
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated switch using stacked phase change materials
- Patent number 11,665,987
- Issue date May 30, 2023
- International Business Machines Corporation
- Juntao Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory cell
- Patent number 11,653,579
- Issue date May 16, 2023
- Paolo Giuseppe Cappelletti
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change material-based XOR logic gates
- Patent number 11,653,578
- Issue date May 16, 2023
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Chip containing an onboard non-volatile memory comprising a phase-c...
- Patent number 11,653,582
- Issue date May 16, 2023
- STMicroelectronics (Crolles 2) SAS
- Franck Arnaud
- G11 - INFORMATION STORAGE
Information Patent Grant
Set-while-verify circuit and reset-while verify circuit for resisti...
- Patent number 11,646,078
- Issue date May 9, 2023
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile tunable capacitive processing unit
- Patent number 11,647,684
- Issue date May 9, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-memory resistive random access memory XOR logic using compliment...
- Patent number 11,631,809
- Issue date Apr 18, 2023
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point memory compensation
- Patent number 11,587,615
- Issue date Feb 21, 2023
- Micron Technology, Inc.
- Zengtao T. Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of controlling PCRAM devices in single-level-cell (SLC) and...
- Patent number 11,581,039
- Issue date Feb 14, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Grant
2T-1R architecture for resistive RAM
- Patent number 11,568,929
- Issue date Jan 31, 2023
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
PUF with dissolvable conductive paths
- Patent number 11,552,810
- Issue date Jan 10, 2023
- Arizona Board of Regents on Behalf of Northern Arizona University
- Bertrand Francis Cambou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Techniques for initializing resistive memory devices by applying vo...
- Patent number 11,468,947
- Issue date Oct 11, 2022
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Cleaning memory blocks using multiple types of write operations
- Patent number 11,468,948
- Issue date Oct 11, 2022
- Micron Technology, Inc.
- Nicola Del Gatto
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHODS OF CONTROLLING PCRAM DEVICES IN SINGLE-LEVEL-CELL (SLC) AND...
- Publication number 20240194254
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Win-San KHWA
- G11 - INFORMATION STORAGE
Information Patent Application
FORMING OPERATION OF RESISTIVE MEMORY DEVICE
- Publication number 20240087644
- Publication date Mar 14, 2024
- WINBOND ELECTRONICS CORP.
- I-Hsien Tseng
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROL DEVICE, STORAGE DEVICE, SEMICONDUCTOR DEVICE, AND CONTROL M...
- Publication number 20240071492
- Publication date Feb 29, 2024
- Sony Semiconductor Solutions Corporation
- Masaaki NAKAZAWA
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY CELL
- Publication number 20230389450
- Publication date Nov 30, 2023
- STMicroelectronics S.r.l.
- Paolo Giuseppe CAPPELLETTI
- G11 - INFORMATION STORAGE
Information Patent Application
CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-C...
- Publication number 20230263082
- Publication date Aug 17, 2023
- STMicroelectronics (Crolles 2) SAS
- Franck ARNAUD
- G11 - INFORMATION STORAGE
Information Patent Application
LOW LOSS MULTISTATE PHOTONIC MEMORIES
- Publication number 20230207008
- Publication date Jun 29, 2023
- THE GEORGE WASHINGTON UNIVERSITY
- Mariro MISCUGLIO
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF CONTROLLING PCRAM DEVICES IN SINGLE-LEVEL-CELL (SLC) AND...
- Publication number 20230197150
- Publication date Jun 22, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Win-San KHWA
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MATERIAL-BASED XOR LOGIC GATES
- Publication number 20230189669
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Application
GLOBAL HEATER FOR PHASE CHANGE MEMORY
- Publication number 20230180644
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2T-1R ARCHITECTURE FOR RESISTIVE RAM
- Publication number 20230154531
- Publication date May 18, 2023
- Hefei Reliance Memory Limited
- Deepak Chandra SEKAR
- G11 - INFORMATION STORAGE
Information Patent Application
Electronic Circuit and Method of Operating an Electronic Circuit
- Publication number 20230104213
- Publication date Apr 6, 2023
- Marcus Janke
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE PHASE CHANGE MATERIAL LOGIC DEVICE
- Publication number 20230083308
- Publication date Mar 16, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLEANING MEMORY BLOCKS USING MULTIPLE TYPES OF WRITE OPERATIONS
- Publication number 20230070436
- Publication date Mar 9, 2023
- Micron Technology, Inc.
- Nicola Del Gatto
- G11 - INFORMATION STORAGE
Information Patent Application
ELEMENTARY CELL COMPRISING A RESISTIVE MEMORY AND A DEVICE INTENDED...
- Publication number 20230047263
- Publication date Feb 16, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Anthonin VERDY
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT COMPRISING A PLURALITY OF 1T1R MEMORY CELLS
- Publication number 20230012748
- Publication date Jan 19, 2023
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES AL TERNATIVES
- Olivier BILLOINT
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR INITIALIZING RESISTIVE MEMORY DEVICES BY APPLYING VO...
- Publication number 20230012275
- Publication date Jan 12, 2023
- Hefei Reliance Memory Limited
- Zhichao LU
- G11 - INFORMATION STORAGE
Information Patent Application
DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...
- Publication number 20230005538
- Publication date Jan 5, 2023
- CROSSBAR, INC.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Application
COMPOSITION FOR MEMORY CELL CONTAINING CHALCOGEN COMPOUND, STRUCTUR...
- Publication number 20220367808
- Publication date Nov 17, 2022
- Jun-sung KIM
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE
- Publication number 20220310918
- Publication date Sep 29, 2022
- KIOXIA Corporation
- Takayuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF CONTROLLING PCRAM DEVICES IN SINGLE-LEVEL-CELL (SLC) AND...
- Publication number 20220230681
- Publication date Jul 21, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Win-San KHWA
- G11 - INFORMATION STORAGE
Information Patent Application
CLEANING MEMORY BLOCKS USING MULTIPLE TYPES OF WRITE OPERATIONS
- Publication number 20220230683
- Publication date Jul 21, 2022
- Micron Technology, Inc.
- Nicola Del Gatto
- G11 - INFORMATION STORAGE
Information Patent Application
PCRAM ANALOG PROGRAMMING BY A GRADUAL RESET COOLING STEP
- Publication number 20220199159
- Publication date Jun 23, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jau-Yi Wu
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Element for PCM RPU by Trench Depth Patterning
- Publication number 20220020922
- Publication date Jan 20, 2022
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT MEMORY COMPENSATION
- Publication number 20210335420
- Publication date Oct 28, 2021
- Micron Technology, Inc.
- Zengtao T. Liu
- G11 - INFORMATION STORAGE
Information Patent Application
DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...
- Publication number 20210314177
- Publication date Oct 7, 2021
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Application
2T-1R ARCHITECTURE FOR RESISTIVE RAM
- Publication number 20210295913
- Publication date Sep 23, 2021
- Hefei Reliance Memory Limited
- Deepak Chandra SEKAR
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED REACTIVE MATERIAL ERASURE ELEMENT WITH PHASE CHANGE MEMORY
- Publication number 20210257410
- Publication date Aug 19, 2021
- International Business Machines Corporation
- Matthew J. BrightSky
- G11 - INFORMATION STORAGE
Information Patent Application
Set-While-Verify Circuit And Reset-While Verify Circuit For Resisti...
- Publication number 20210257023
- Publication date Aug 19, 2021
- Silicon Storage Technology, Inc.
- HIEU VAN TRAN
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY CELL
- Publication number 20210249594
- Publication date Aug 12, 2021
- STMicroelectronics S.r.l.
- Paolo Giuseppe CAPPELLETTI
- G11 - INFORMATION STORAGE
Information Patent Application
Tunable Forming Voltage for RRAM Device
- Publication number 20210234094
- Publication date Jul 29, 2021
- International Business Machines Corporation
- Dexin Kong
- G11 - INFORMATION STORAGE

Write by generating heat in the surroundings of the memory material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Phase-change memory cell

Phase-change material-based XOR logic gates

Electroforming process using an inversion-invariant linear ECC, and...

Memory circuit comprising a plurality of 1T1R memory cells

Techniques for initializing resistive memory devices by applying vo...

Distinct chip identifier sequence utilizing unclonable characterist...

Methods of controlling PCRAM devices in single-level-cell (SLC) and...

Resistive memory device and forming method thereof with improved fo...

Resistance change device and storage device

Nonvolatile phase change material logic device

2T-1R architecture for resistive ram

Storage device having a resistance change memory element and writin...

PCRAM analog programming by a gradual reset cooling step

Phase change memory with conductive bridge filament

Cleaning memory blocks using multiple types of write operations

Semiconductor memory device

Electrically formed memory array using single element materials

Integrated switch using stacked phase change materials

Phase-change memory cell

Phase-change material-based XOR logic gates

Chip containing an onboard non-volatile memory comprising a phase-c...

Set-while-verify circuit and reset-while verify circuit for resisti...

Nonvolatile tunable capacitive processing unit

In-memory resistive random access memory XOR logic using compliment...

Cross-point memory compensation

Methods of controlling PCRAM devices in single-level-cell (SLC) and...

2T-1R architecture for resistive RAM

PUF with dissolvable conductive paths

Techniques for initializing resistive memory devices by applying vo...

Cleaning memory blocks using multiple types of write operations

Patents Applicationslast 30 patents

METHODS OF CONTROLLING PCRAM DEVICES IN SINGLE-LEVEL-CELL (SLC) AND...

FORMING OPERATION OF RESISTIVE MEMORY DEVICE

CONTROL DEVICE, STORAGE DEVICE, SEMICONDUCTOR DEVICE, AND CONTROL M...

PHASE-CHANGE MEMORY CELL

CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-C...

LOW LOSS MULTISTATE PHOTONIC MEMORIES

METHODS OF CONTROLLING PCRAM DEVICES IN SINGLE-LEVEL-CELL (SLC) AND...

PHASE-CHANGE MATERIAL-BASED XOR LOGIC GATES

GLOBAL HEATER FOR PHASE CHANGE MEMORY

2T-1R ARCHITECTURE FOR RESISTIVE RAM

Electronic Circuit and Method of Operating an Electronic Circuit

NONVOLATILE PHASE CHANGE MATERIAL LOGIC DEVICE

CLEANING MEMORY BLOCKS USING MULTIPLE TYPES OF WRITE OPERATIONS

ELEMENTARY CELL COMPRISING A RESISTIVE MEMORY AND A DEVICE INTENDED...

MEMORY CIRCUIT COMPRISING A PLURALITY OF 1T1R MEMORY CELLS

TECHNIQUES FOR INITIALIZING RESISTIVE MEMORY DEVICES BY APPLYING VO...

DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...

COMPOSITION FOR MEMORY CELL CONTAINING CHALCOGEN COMPOUND, STRUCTUR...

STORAGE DEVICE

METHODS OF CONTROLLING PCRAM DEVICES IN SINGLE-LEVEL-CELL (SLC) AND...

CLEANING MEMORY BLOCKS USING MULTIPLE TYPES OF WRITE OPERATIONS

PCRAM ANALOG PROGRAMMING BY A GRADUAL RESET COOLING STEP

Resistive Element for PCM RPU by Trench Depth Patterning

CROSS-POINT MEMORY COMPENSATION

DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...

2T-1R ARCHITECTURE FOR RESISTIVE RAM

INTEGRATED REACTIVE MATERIAL ERASURE ELEMENT WITH PHASE CHANGE MEMORY

Set-While-Verify Circuit And Reset-While Verify Circuit For Resisti...

PHASE-CHANGE MEMORY CELL

Tunable Forming Voltage for RRAM Device