Write operation performed depending on read result

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G11C2013/0076Write operation performed depending on read result

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Patents Grantslast 30 patents

Information Patent Grant
Multi-step pre-read for write operations in memory devices
- Patent number 12,106,803
- Issue date Oct 1, 2024
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices with improved refreshing operation
- Patent number 11,935,620
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yue-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive memory cell write conditions
- Patent number 11,735,262
- Issue date Aug 22, 2023
- Hefei Reliance Memory Limited
- Brent Haukness
- G11 - INFORMATION STORAGE
Information Patent Grant
Neural network data updates using in-place bit-addressable writes w...
- Patent number 11,507,835
- Issue date Nov 22, 2022
- Western Digital Technologies, Inc.
- Alexander Bazarsky
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-step pre-read for write operations in memory devices
- Patent number 11,367,484
- Issue date Jun 21, 2022
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive memory cell write conditions
- Patent number 11,302,394
- Issue date Apr 12, 2022
- Hefei Reliance Memory Limited
- Brent Haukness
- G11 - INFORMATION STORAGE
Information Patent Grant
Energy efficient write scheme for non-volatile resistive crossbar a...
- Patent number 11,189,344
- Issue date Nov 30, 2021
- University of Rochester
- Albert Ciprut
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance variable memory sensing using programming signals
- Patent number 11,056,189
- Issue date Jul 6, 2021
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices with improved refreshing operation
- Patent number 11,043,249
- Issue date Jun 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yue-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus for low power write and read operations for resistive memory
- Patent number 11,024,356
- Issue date Jun 1, 2021
- Intel Corporation
- Liqiong Wei
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual demarcation voltage sensing before writes
- Patent number 11,024,380
- Issue date Jun 1, 2021
- Intel Corporation
- Daniel Chu
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal metastable mixed-conductor memristive devices
- Patent number 11,003,981
- Issue date May 11, 2021
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive memory apparatus and method for writing data thereof
- Patent number 10,937,495
- Issue date Mar 2, 2021
- Winbond Electronics Corp.
- He-Hsuan Chao
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory systems and memory programming methods
- Patent number 10,937,493
- Issue date Mar 2, 2021
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive memory cell write conditions
- Patent number 10,861,544
- Issue date Dec 8, 2020
- Hefei Reliance Memory Limited
- Brent Haukness
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods, articles, and devices for pulse adjustments to program a m...
- Patent number 10,803,938
- Issue date Oct 13, 2020
- Micron Technology, Inc.
- Alessio Spessot
- G11 - INFORMATION STORAGE
Information Patent Grant
Polarity-conditioned memory cell write operations
- Patent number 10,748,615
- Issue date Aug 18, 2020
- Micron Technology, Inc.
- Hongmei Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Read-write cycle execution based on history
- Patent number 10,714,176
- Issue date Jul 14, 2020
- Micron Technology, Inc.
- Jeffrey Frederiksen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Program operations in memory
- Patent number 10,600,456
- Issue date Mar 24, 2020
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 10,553,279
- Issue date Feb 4, 2020
- TOSHIBA MEMORY CORPORATION
- Naoki Shimizu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory, memory controller, storage apparatus, information processin...
- Patent number 10,528,287
- Issue date Jan 7, 2020
- Sony Corporation
- Kenichi Nakanishi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Apparatuses and methods for determining stability of a memory cell
- Patent number 10,515,696
- Issue date Dec 24, 2019
- Micron Technology, Inc.
- Alessandro Torsi
- G11 - INFORMATION STORAGE
Information Patent Grant
Determining first write strength
- Patent number 10,497,441
- Issue date Dec 3, 2019
- Hewlett Packard Enterprise Development LP
- Gregg B. Lesartre
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point memory single-selection write technique
- Patent number 10,497,434
- Issue date Dec 3, 2019
- Intel Corporation
- Mase J Taub
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory storage apparatus and writing method thereof inclu...
- Patent number 10,490,275
- Issue date Nov 26, 2019
- Winbond Electronics Corp.
- Lih-Wei Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual demarcation voltage sensing before writes
- Patent number 10,482,960
- Issue date Nov 19, 2019
- Intel Corporation
- Daniel Chu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices with improved refreshing operation
- Patent number 10,475,490
- Issue date Nov 12, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yue-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for managing the endurance of a non-volatile rewritable memo...
- Patent number 10,475,509
- Issue date Nov 12, 2019
- Commissariat a l'Energie Atomique et aux Energies Alternative
- Gabriel Molas
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system and resistance change type memory
- Patent number 10,452,475
- Issue date Oct 22, 2019
- TOSHIBA MEMORY CORPORATION
- Naoki Shimizu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Apparatus for low power write and read operations for resistive memory
- Patent number 10,438,640
- Issue date Oct 8, 2019
- Intel Corporation
- Liqiong Wei
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES
- Publication number 20220284957
- Publication date Sep 8, 2022
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE MEMORY CELL WRITE CONDITIONS
- Publication number 20220208266
- Publication date Jun 30, 2022
- Hefei Reliance Memory Limited
- Brent HAUKNESS
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES WITH IMPROVED REFRESHING OPERATION
- Publication number 20210312960
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yue-Der CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL METASTABLE MIXED-CONDUCTOR MEMRISTIVE DEVICES
- Publication number 20210209445
- Publication date Jul 8, 2021
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ADAPTIVE MEMORY CELL WRITE CONDITIONS
- Publication number 20210043256
- Publication date Feb 11, 2021
- Hefei Reliance Memory Limited
- Brent HAUKNESS
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY APPARATUS AND METHOD FOR WRITING DATA THEREOF
- Publication number 20210005255
- Publication date Jan 7, 2021
- WINBOND ELECTRONICS CORP.
- He-Hsuan Chao
- G11 - INFORMATION STORAGE
Information Patent Application
ENERGY EFFICIENT WRITE SCHEME FOR NON-VOLATILE RESISTIVE CROSSBAR A...
- Publication number 20200312408
- Publication date Oct 1, 2020
- Albert Ciprut
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL DEMARCATION VOLTAGE SENSING BEFORE WRITES
- Publication number 20200160908
- Publication date May 21, 2020
- Intel Corporation
- Daniel Chu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES WITH IMPROVED REFRESHING OPERATION
- Publication number 20200075068
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yue-Der CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
READ-WRITE CYCLE EXECUTION BASED ON HISTORY
- Publication number 20200058353
- Publication date Feb 20, 2020
- Micron Technology, Inc.
- Jeffrey Frederiksen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHODS, ARTICLES, AND DEVICES FOR PULSE ADJUSTMENTS TO PROGRAM A M...
- Publication number 20200035298
- Publication date Jan 30, 2020
- Micron Technology, Inc.
- Alessio Spessot
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY
- Publication number 20200020378
- Publication date Jan 16, 2020
- Intel Corporation
- Liqiong WEI
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE MEMORY CELL WRITE CONDITIONS
- Publication number 20190392898
- Publication date Dec 26, 2019
- Hefei Reliance Memory Limited
- Brent HAUKNESS
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE VARIABLE MEMORY SENSING USING PROGRAMMING SIGNALS
- Publication number 20190348111
- Publication date Nov 14, 2019
- Micron Technology, Inc.
- Ferdinando Bedeschi
- G11 - INFORMATION STORAGE
Information Patent Application
POLARITY-CONDITIONED MEMORY CELL WRITE OPERATIONS
- Publication number 20190311768
- Publication date Oct 10, 2019
- Micron Technology, Inc.
- Hongmei Wang
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS, ARTICLES, AND DEVICES FOR PULSE ADJUSTMENT TO PROGRAM A ME...
- Publication number 20190108881
- Publication date Apr 11, 2019
- Micron Technology, Inc.
- Alessio Spessot
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT MEMORY SINGLE-SELECTION WRITE TECHNIQUE
- Publication number 20190074058
- Publication date Mar 7, 2019
- Intel Corporation
- Mase J Taub
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Systems and Memory Programming Methods
- Publication number 20190066784
- Publication date Feb 28, 2019
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY STORAGE APPARATUS AND WRITING METHOD THEREOF
- Publication number 20190057738
- Publication date Feb 21, 2019
- WINBOND ELECTRONICS CORP.
- Lih-Wei Lin
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY
- Publication number 20180342277
- Publication date Nov 29, 2018
- Intel Corporation
- Liqiong WEI
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTIVE WRITES IN A STORAGE ELEMENT
- Publication number 20180114575
- Publication date Apr 26, 2018
- ARM Limited
- Shidhartha DAS
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES WITH IMPROVED REFRESHING OPERATION
- Publication number 20180033471
- Publication date Feb 1, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yue-Der CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS, ARTICLES, AND DEVICES FOR PULSE ADJUSTMENT TO PROGRAM A ME...
- Publication number 20170345495
- Publication date Nov 30, 2017
- Micron Technology, Inc.
- Alessio Spessot
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT MEMORY SINGLE-SELECTION WRITE TECHNIQUE
- Publication number 20170294228
- Publication date Oct 12, 2017
- Intel Corporation
- Mase J Taub
- G11 - INFORMATION STORAGE
Information Patent Application
3D MEMORY DEVICE and STRUCTURE
- Publication number 20170229174
- Publication date Aug 10, 2017
- MonolithIC 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
MEMRISTOR MEMORY
- Publication number 20160351259
- Publication date Dec 1, 2016
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Yoocharn Jeon
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STORAGE CONTROL DEVICE, STORAGE DEVICE, INFORMATION PROCESSING SYST...
- Publication number 20150049538
- Publication date Feb 19, 2015
- SONY CORPORATION
- Hideaki OKUBO
- G11 - INFORMATION STORAGE
Information Patent Application
DATA ENCODING FOR NON-VOLATILE MEMORY
- Publication number 20140376298
- Publication date Dec 25, 2014
- Menahem Lasser
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DATA ENCODING FOR NON-VOLATILE MEMORY
- Publication number 20140376297
- Publication date Dec 25, 2014
- SanDisk Technologies Inc.
- MENAHEM LASSER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- Publication number 20140376302
- Publication date Dec 25, 2014
- KABUSHIKI KAISHA TOSHIBA
- Hiroyuki Nagashima
- G11 - INFORMATION STORAGE

Write operation performed depending on read result

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Multi-step pre-read for write operations in memory devices

Memory devices with improved refreshing operation

Adaptive memory cell write conditions

Neural network data updates using in-place bit-addressable writes w...

Multi-step pre-read for write operations in memory devices

Adaptive memory cell write conditions

Energy efficient write scheme for non-volatile resistive crossbar a...

Resistance variable memory sensing using programming signals

Memory devices with improved refreshing operation

Apparatus for low power write and read operations for resistive memory

Dual demarcation voltage sensing before writes

Two-terminal metastable mixed-conductor memristive devices

Resistive memory apparatus and method for writing data thereof

Memory systems and memory programming methods

Adaptive memory cell write conditions

Methods, articles, and devices for pulse adjustments to program a m...

Polarity-conditioned memory cell write operations

Read-write cycle execution based on history

Program operations in memory

Semiconductor memory device

Memory, memory controller, storage apparatus, information processin...

Apparatuses and methods for determining stability of a memory cell

Determining first write strength

Cross-point memory single-selection write technique

Resistive memory storage apparatus and writing method thereof inclu...

Dual demarcation voltage sensing before writes

Memory devices with improved refreshing operation

Method for managing the endurance of a non-volatile rewritable memo...

Memory system and resistance change type memory

Apparatus for low power write and read operations for resistive memory

Patents Applicationslast 30 patents

MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES

ADAPTIVE MEMORY CELL WRITE CONDITIONS

MEMORY DEVICES WITH IMPROVED REFRESHING OPERATION

TWO-TERMINAL METASTABLE MIXED-CONDUCTOR MEMRISTIVE DEVICES

ADAPTIVE MEMORY CELL WRITE CONDITIONS

RESISTIVE MEMORY APPARATUS AND METHOD FOR WRITING DATA THEREOF

ENERGY EFFICIENT WRITE SCHEME FOR NON-VOLATILE RESISTIVE CROSSBAR A...

DUAL DEMARCATION VOLTAGE SENSING BEFORE WRITES

MEMORY DEVICES WITH IMPROVED REFRESHING OPERATION

READ-WRITE CYCLE EXECUTION BASED ON HISTORY

METHODS, ARTICLES, AND DEVICES FOR PULSE ADJUSTMENTS TO PROGRAM A M...

APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY

ADAPTIVE MEMORY CELL WRITE CONDITIONS

RESISTANCE VARIABLE MEMORY SENSING USING PROGRAMMING SIGNALS

POLARITY-CONDITIONED MEMORY CELL WRITE OPERATIONS

METHODS, ARTICLES, AND DEVICES FOR PULSE ADJUSTMENT TO PROGRAM A ME...

CROSS-POINT MEMORY SINGLE-SELECTION WRITE TECHNIQUE

Memory Systems and Memory Programming Methods

RESISTIVE MEMORY STORAGE APPARATUS AND WRITING METHOD THEREOF

APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY

SELECTIVE WRITES IN A STORAGE ELEMENT

MEMORY DEVICES WITH IMPROVED REFRESHING OPERATION

METHODS, ARTICLES, AND DEVICES FOR PULSE ADJUSTMENT TO PROGRAM A ME...

CROSS-POINT MEMORY SINGLE-SELECTION WRITE TECHNIQUE

3D MEMORY DEVICE and STRUCTURE

MEMRISTOR MEMORY

STORAGE CONTROL DEVICE, STORAGE DEVICE, INFORMATION PROCESSING SYST...

DATA ENCODING FOR NON-VOLATILE MEMORY

DATA ENCODING FOR NON-VOLATILE MEMORY

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE