Write using potential difference applied between cell electrodes

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Patents Grantslast 30 patents

Information Patent Grant
Memory device with write pulse trimming
- Patent number 12,165,704
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hiroki Noguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for controlling gradual conductance change in...
- Patent number 12,125,527
- Issue date Oct 22, 2024
- Jun-sung Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cells with asymmetrical electrode interfaces
- Patent number 12,082,513
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for programming multi-level self-selecting memory cell
- Patent number 12,073,881
- Issue date Aug 27, 2024
- Micron Technology, Inc.
- Mattia Robustelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for multi-level chalcogenide memory cell programming
- Patent number 12,033,695
- Issue date Jul 9, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory selector threshold voltage recovery
- Patent number 12,014,774
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Elia Ambrosi
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-bit storage device using phase change material
- Patent number 12,004,433
- Issue date Jun 4, 2024
- TOSHIBA GLOBAL COMMERCE SOLUTIONS, INC.
- Timothy Crockett
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication of stackable embedded eDRAM using a binary alloy based...
- Patent number 11,985,909
- Issue date May 14, 2024
- Intel Corporation
- Elijah Karpov
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory cell and method for fabricating the same
- Patent number 11,978,511
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yung-Huei Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Segregation-based memory
- Patent number 11,869,585
- Issue date Jan 9, 2024
- Micron Technology, Inc.
- Mattia Boniardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for stabilizing cell threshold voltage
- Patent number 11,830,548
- Issue date Nov 28, 2023
- Micron Technology, Inc.
- Paolo Amato
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory
- Patent number 11,817,146
- Issue date Nov 14, 2023
- Rheinisch-Westfalische Technische Hochschule (RWTH) Aachen
- Shuai Wei
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for programming a memory cell
- Patent number 11,817,148
- Issue date Nov 14, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses including multi-level memory cells and methods of opera...
- Patent number 11,798,620
- Issue date Oct 24, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level self-selecting memory device
- Patent number 11,769,551
- Issue date Sep 26, 2023
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Energy recovery in filamentary resistive memories
- Patent number 11,763,884
- Issue date Sep 19, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Paola Trotti
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques to access a self-selecting memory device
- Patent number 11,763,886
- Issue date Sep 19, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with write pulse trimming
- Patent number 11,742,021
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hiroki Noguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 11,735,260
- Issue date Aug 22, 2023
- Winbond Electronics Corp.
- Yasuhiro Tomita
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing disturbance in crossbar array circuits
- Patent number 11,735,256
- Issue date Aug 22, 2023
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive memory cell write conditions
- Patent number 11,735,262
- Issue date Aug 22, 2023
- Hefei Reliance Memory Limited
- Brent Haukness
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of operating resistive memory device to increase read margin
- Patent number 11,727,985
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Kwang-woo Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming memory cells using asymmetric current pulses
- Patent number 11,705,199
- Issue date Jul 18, 2023
- Micron Technology, Inc.
- Mattia Robustelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-selecting memory cells configured to store more than one bit p...
- Patent number 11,694,747
- Issue date Jul 4, 2023
- Micron Technology, Inc.
- Lingming Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of RRAM write ramping voltage in intervals
- Patent number 11,682,457
- Issue date Jun 20, 2023
- Hefei Reliance Memory Limited
- Brent Haukness
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Two memory cells sensed to determine one data value
- Patent number 11,670,367
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Grant
Projected memory device with carbon-based projection component
- Patent number 11,665,984
- Issue date May 30, 2023
- International Business Machines Corporation
- Ghazi Sarwat Syed
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Set-while-verify circuit and reset-while verify circuit for resisti...
- Patent number 11,646,078
- Issue date May 9, 2023
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device and method of programming the same
- Patent number 11,640,842
- Issue date May 2, 2023
- Samsung Electronics Co., Ltd.
- Moonki Jung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING
- Publication number 20240404590
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY
- Publication number 20240296885
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Elia Ambrosi
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Bit Storage Device Using Phase Change Material
- Publication number 20240292764
- Publication date Aug 29, 2024
- Toshiba Global Commerce Solutions, Inc.
- Timothy Crockett
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY CELL AND METHOD FOR FABRICATING THE SAME
- Publication number 20240257871
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yung-Huei LEE
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPORAL KERNEL DEVICES, TEMPORAL KERNEL COMPUTING SYSTEMS, AND MET...
- Publication number 20240215265
- Publication date Jun 27, 2024
- Seoul National University R&DB Foundation
- Cheol Seong Hwang
- G11 - INFORMATION STORAGE
Information Patent Application
PIEZOELECTRIC MEMORY
- Publication number 20240147873
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH WRITE PULSE TRIMMING
- Publication number 20240029791
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hiroki Noguchi
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING DISTURBANCE IN CROSSBAR ARRAY CIRCUITS
- Publication number 20230335190
- Publication date Oct 19, 2023
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF RRAM WRITE RAMPING VOLTAGE IN INTERVALS
- Publication number 20230307045
- Publication date Sep 28, 2023
- Hefei Reliance Memory Limited
- Brent HAUKNESS
- G11 - INFORMATION STORAGE
Information Patent Application
Self-Selecting Memory Cells Configured to Store More Than One Bit p...
- Publication number 20230267996
- Publication date Aug 24, 2023
- Micron Technology, Inc.
- Lingming Yang
- G11 - INFORMATION STORAGE
Information Patent Application
LOGIC GATES AND STATEFUL LOGIC USING PHASE CHANGE MEMORY
- Publication number 20230155590
- Publication date May 18, 2023
- Technion Research & Development Foundation Limited
- Shahar KVATINSKY
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY CELL AND METHOD FOR FABRICATING THE SAME
- Publication number 20230027575
- Publication date Jan 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yung-Huei LEE
- G11 - INFORMATION STORAGE
Information Patent Application
PULSING SYNAPTIC DEVICES BASED ON PHASE-CHANGE MEMORY TO INCREASE T...
- Publication number 20220406377
- Publication date Dec 22, 2022
- International Business Machines Corporation
- Fabio Carta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROGRAMMING DEVICES AND WEIGHTS IN HARDWARE
- Publication number 20220392525
- Publication date Dec 8, 2022
- International Business Machines Corporation
- Stefano Ambrogio
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Self-Selecting Memory Cells Configured to Store More Than One Bit p...
- Publication number 20220392526
- Publication date Dec 8, 2022
- Micron Technology, Inc.
- Lingming Yang
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUSES INCLUDING MULTI-LEVEL MEMORY CELLS AND METHODS OF OPERA...
- Publication number 20220366974
- Publication date Nov 17, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH WRITE PULSE TRIMMING
- Publication number 20220366982
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hiroki Noguchi
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells, Memory Cell Programming Methods, Memory Cell Reading...
- Publication number 20220351775
- Publication date Nov 3, 2022
- Micron Technology, Inc.
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME
- Publication number 20220293177
- Publication date Sep 15, 2022
- Samsung Electronics Co., Ltd.
- MOONKI JUNG
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHOD FOR CONTROLLING GRADUAL CONDUCTANCE CHANGE IN...
- Publication number 20220270675
- Publication date Aug 25, 2022
- Jun-sung KIM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TECHNIQUES FOR PROGRAMMING MULTI-LEVEL SELF-SELECTING MEMORY CELL
- Publication number 20220262437
- Publication date Aug 18, 2022
- Micron Technology, Inc.
- Mattia Robustelli
- G11 - INFORMATION STORAGE
Information Patent Application
Systems and Methods for Stabilizing Cell Threshold Voltage
- Publication number 20220223204
- Publication date Jul 14, 2022
- Micron Technology, Inc.
- Paolo Amato
- G11 - INFORMATION STORAGE
Information Patent Application
Phase-change memory
- Publication number 20220215878
- Publication date Jul 7, 2022
- Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen
- Shuai WEI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH WRITE PULSE TRIMMING
- Publication number 20220215880
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hiroki Noguchi
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE MEMORY CELL WRITE CONDITIONS
- Publication number 20220208266
- Publication date Jun 30, 2022
- Hefei Reliance Memory Limited
- Brent HAUKNESS
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR PROGRAMMING A MEMORY CELL
- Publication number 20220189551
- Publication date Jun 16, 2022
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY
- Publication number 20220140004
- Publication date May 5, 2022
- WINBOND ELECTRONICS CORP.
- Yasuhiro TOMITA
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING MEMORY CELLS USING ASYMMETRIC CURRENT PULSES
- Publication number 20220122664
- Publication date Apr 21, 2022
- Micron Technology, Inc.
- Mattia Robustelli
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES TO ACCESS A SELF-SELECTING MEMORY DEVICE
- Publication number 20220115068
- Publication date Apr 14, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20220101919
- Publication date Mar 31, 2022
- SK HYNIX INC.
- Jae Hyun HAN
- G11 - INFORMATION STORAGE

Write using potential difference applied between cell electrodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device with write pulse trimming

Apparatus and method for controlling gradual conductance change in...

Memory cells with asymmetrical electrode interfaces

Techniques for programming multi-level self-selecting memory cell

Techniques for multi-level chalcogenide memory cell programming

Memory selector threshold voltage recovery

Multi-bit storage device using phase change material

Fabrication of stackable embedded eDRAM using a binary alloy based...

Phase-change memory cell and method for fabricating the same

Segregation-based memory

Systems and methods for stabilizing cell threshold voltage

Phase-change memory

Techniques for programming a memory cell

Apparatuses including multi-level memory cells and methods of opera...

Multi-level self-selecting memory device

Energy recovery in filamentary resistive memories

Techniques to access a self-selecting memory device

Memory device with write pulse trimming

Semiconductor memory device

Reducing disturbance in crossbar array circuits

Adaptive memory cell write conditions

Method of operating resistive memory device to increase read margin

Programming memory cells using asymmetric current pulses

Self-selecting memory cells configured to store more than one bit p...

Method of RRAM write ramping voltage in intervals

Two-terminal reversibly switchable memory device

Two memory cells sensed to determine one data value

Projected memory device with carbon-based projection component

Set-while-verify circuit and reset-while verify circuit for resisti...

Resistive memory device and method of programming the same

Patents Applicationslast 30 patents

TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING

MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY

Multi-Bit Storage Device Using Phase Change Material

PHASE-CHANGE MEMORY CELL AND METHOD FOR FABRICATING THE SAME

TEMPORAL KERNEL DEVICES, TEMPORAL KERNEL COMPUTING SYSTEMS, AND MET...

PIEZOELECTRIC MEMORY

MEMORY DEVICE WITH WRITE PULSE TRIMMING

REDUCING DISTURBANCE IN CROSSBAR ARRAY CIRCUITS

METHOD OF RRAM WRITE RAMPING VOLTAGE IN INTERVALS

Self-Selecting Memory Cells Configured to Store More Than One Bit p...

LOGIC GATES AND STATEFUL LOGIC USING PHASE CHANGE MEMORY

PHASE-CHANGE MEMORY CELL AND METHOD FOR FABRICATING THE SAME

PULSING SYNAPTIC DEVICES BASED ON PHASE-CHANGE MEMORY TO INCREASE T...

PROGRAMMING DEVICES AND WEIGHTS IN HARDWARE

Self-Selecting Memory Cells Configured to Store More Than One Bit p...

APPARATUSES INCLUDING MULTI-LEVEL MEMORY CELLS AND METHODS OF OPERA...

MEMORY DEVICE WITH WRITE PULSE TRIMMING

Memory Cells, Memory Cell Programming Methods, Memory Cell Reading...

RESISTIVE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME

APPARATUS AND METHOD FOR CONTROLLING GRADUAL CONDUCTANCE CHANGE IN...

TECHNIQUES FOR PROGRAMMING MULTI-LEVEL SELF-SELECTING MEMORY CELL

Systems and Methods for Stabilizing Cell Threshold Voltage

Phase-change memory

MEMORY DEVICE WITH WRITE PULSE TRIMMING

ADAPTIVE MEMORY CELL WRITE CONDITIONS

TECHNIQUES FOR PROGRAMMING A MEMORY CELL

RESISTIVE MEMORY

PROGRAMMING MEMORY CELLS USING ASYMMETRIC CURRENT PULSES

TECHNIQUES TO ACCESS A SELF-SELECTING MEMORY DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME