Write using write potential applied to access device gate

Industry

CPC
G11C2013/0071

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES

Current Industry

G11C2013/0071Write using write potential applied to access device gate

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Current and voltage limit circuitry for resistive random access mem...
- Patent number 12,040,017
- Issue date Jul 16, 2024
- Weebit Nano Ltd.
- Lior Dagan
- G11 - INFORMATION STORAGE
Information Patent Grant
2T-1R architecture for resistive ram
- Patent number 11,908,515
- Issue date Feb 20, 2024
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance change memory cell circuits and methods
- Patent number 11,848,050
- Issue date Dec 19, 2023
- Hefei Reliance Memory Limited
- Brent Steven Haukness
- G11 - INFORMATION STORAGE
Information Patent Grant
STDP with synaptic fatigue for learning of spike-time-coded pattern...
- Patent number 11,615,298
- Issue date Mar 28, 2023
- Samsung Electronics Co., Ltd.
- Wabe W. Koelmans
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Two-terminal non-volatile memory cell for decoupled read and write...
- Patent number 11,568,927
- Issue date Jan 31, 2023
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2T-1R architecture for resistive RAM
- Patent number 11,568,929
- Issue date Jan 31, 2023
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Crossbar array with reduced disturbance
- Patent number 11,538,523
- Issue date Dec 27, 2022
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including variable resistance element
- Patent number 11,380,844
- Issue date Jul 5, 2022
- SK hynix Inc.
- Jae-Hyun Han
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistance change memory cell circuits and methods
- Patent number 11,380,396
- Issue date Jul 5, 2022
- Hefei Reliance Memory Limited
- Brent Steven Haukness
- G11 - INFORMATION STORAGE
Information Patent Grant
STDP with synaptic fatigue for learning of spike-time-coded pattern...
- Patent number 11,308,387
- Issue date Apr 19, 2022
- Samsung Electronics Co., Ltd.
- Wabe W. Koelmans
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional nonvolatile memory device having resistance chang...
- Patent number 11,309,354
- Issue date Apr 19, 2022
- SK hynix Inc.
- Jae Hyun Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and memory operational methods
- Patent number 11,295,812
- Issue date Apr 5, 2022
- Micron Technology, Inc.
- Wataru Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STDP with synaptic fatigue for learning of spike-time-coded pattern...
- Patent number 11,238,333
- Issue date Feb 1, 2022
- Samsung Electronics Co., Ltd.
- Wabe W. Koelmans
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
1T-1R architecture for resistive random access memory
- Patent number 11,152,062
- Issue date Oct 19, 2021
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cells having an embedded selection element and n...
- Patent number 11,127,897
- Issue date Sep 21, 2021
- SK Hynix Inc.
- Sang Min Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including variable resistance layer
- Patent number 11,114,504
- Issue date Sep 7, 2021
- SK hynix Inc.
- Jae Hyun Han
- G11 - INFORMATION STORAGE
Information Patent Grant
2T-1R architecture for resistive RAM
- Patent number 11,081,176
- Issue date Aug 3, 2021
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including variable resistance element
- Patent number 11,056,648
- Issue date Jul 6, 2021
- SK hynix Inc.
- Jae-Hyun Han
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Apparatus for low power write and read operations for resistive memory
- Patent number 11,024,356
- Issue date Jun 1, 2021
- Intel Corporation
- Liqiong Wei
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory systems and memory programming methods
- Patent number 11,024,378
- Issue date Jun 1, 2021
- Micron Technology , Inc.
- Emiliano Faraoni
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory systems and memory programming methods
- Patent number 10,937,493
- Issue date Mar 2, 2021
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance change memory cell circuits and methods
- Patent number 10,902,915
- Issue date Jan 26, 2021
- Hefei Reliance Memory Limited
- Brent Steven Haukness
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and formation method thereof
- Patent number 10,879,309
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory circuit and formation method thereof
- Patent number 10,879,310
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, system and device for non-volatile memory device operation
- Patent number 10,861,541
- Issue date Dec 8, 2020
- ARM Ltd.
- Bal S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable artificial neuron and associated programming method
- Patent number 10,861,545
- Issue date Dec 8, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Thomas Dalgaty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
1T-1R architecture for resistive random access memory
- Patent number 10,783,964
- Issue date Sep 22, 2020
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance change memory cell circuits and methods
- Patent number 10,699,786
- Issue date Jun 30, 2020
- Hefei Reliance Memory Limited
- Brent Steven Haukness
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuitry and methods for programming resistive random access memor...
- Patent number 10,650,890
- Issue date May 12, 2020
- Microsemi SoC Corp.
- John L. McCollum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2T-1R architecture for resistive ram
- Patent number 10,622,062
- Issue date Apr 14, 2020
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
CURRENT AND VOLTAGE LIMIT CIRCUITRY FOR RESISTIVE RANDOM ACCESS MEM...
- Publication number 20240331772
- Publication date Oct 3, 2024
- Weebit Nano Ltd.
- Lior DAGAN
- G11 - INFORMATION STORAGE
Information Patent Application
2T-1R ARCHITECTURE FOR RESISTIVE RAM
- Publication number 20230154531
- Publication date May 18, 2023
- Hefei Reliance Memory Limited
- Deepak Chandra SEKAR
- G11 - INFORMATION STORAGE
Information Patent Application
CROSSBAR ARRAY WITH REDUCED DISTURBANCE
- Publication number 20230102234
- Publication date Mar 30, 2023
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL NON-VOLATILE MEMORY CELL FOR DECOUPLED READ AND WRITE...
- Publication number 20220319588
- Publication date Oct 6, 2022
- International Business Machines Corporation
- John Rozen
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT AND VOLTAGE LIMIT CIRCUITRY FOR RESISTIVE RANDOM ACCESS MEM...
- Publication number 20220238156
- Publication date Jul 28, 2022
- Weebit Nano Ltd.
- Lior DAGAN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE ELEMENT
- Publication number 20210296581
- Publication date Sep 23, 2021
- SK HYNIX INC.
- Jae-Hyun HAN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
2T-1R ARCHITECTURE FOR RESISTIVE RAM
- Publication number 20210295913
- Publication date Sep 23, 2021
- Hefei Reliance Memory Limited
- Deepak Chandra SEKAR
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICE HAVING RESISTANCE CHANG...
- Publication number 20210202577
- Publication date Jul 1, 2021
- SK HYNIX INC.
- Jae Hyun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE ELEMENT
- Publication number 20210184116
- Publication date Jun 17, 2021
- SK HYNIX INC.
- Jae-Hyun HAN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NONVOLATILE MEMORY CELLS HAVING AN EMBEDDED SELECTION ELEMENT AND N...
- Publication number 20210066585
- Publication date Mar 4, 2021
- SK HYNIX INC.
- Sang Min LEE
- G11 - INFORMATION STORAGE
Information Patent Application
2T-1R ARCHITECTURE FOR RESISTIVE RAM
- Publication number 20200211644
- Publication date Jul 2, 2020
- Hefei Reliance Memory Limited
- Deepak Chandra SEKAR
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUITRY AND METHODS FOR PROGRAMMING RESISTIVE RANDOM ACCESS MEMOR...
- Publication number 20200090747
- Publication date Mar 19, 2020
- Microsemi SoC Corp.
- John L. McCollum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Crossbar array with reduced disturbance
- Publication number 20200058352
- Publication date Feb 20, 2020
- Tetramem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE ARTIFICIAL NEURON AND ASSOCIATED PROGRAMMING METHOD
- Publication number 20200043552
- Publication date Feb 6, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Thomas DALGATY
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY CIRCUIT AND FORMATION METHOD THEREOF
- Publication number 20200027922
- Publication date Jan 23, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chun-Yang Tsai
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY
- Publication number 20200020378
- Publication date Jan 16, 2020
- Intel Corporation
- Liqiong WEI
- G11 - INFORMATION STORAGE
Information Patent Application
1T-1R ARCHITECTURE FOR RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20190355414
- Publication date Nov 21, 2019
- Hefei Reliance Memory Limited
- Deepak Chandra SEKAR
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Devices and Memory Operational Methods
- Publication number 20190318782
- Publication date Oct 17, 2019
- Micron Technology, Inc.
- Wataru Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING REDUCED CHIP SIZE AND OPERATION METH...
- Publication number 20190311755
- Publication date Oct 10, 2019
- Samsung Electronics Co., Ltd.
- SUK-SOO PYO
- G11 - INFORMATION STORAGE
Information Patent Application
2T-1R ARCHITECTURE FOR RESISTIVE RAM
- Publication number 20190156886
- Publication date May 23, 2019
- Hefei Reliance Memory Limited
- Deepak Chandra SEKAR
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Devices and Memory Operational Methods
- Publication number 20190080759
- Publication date Mar 14, 2019
- Micron Technology, Inc.
- Wataru Otsuka
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Systems and Memory Programming Methods
- Publication number 20190074060
- Publication date Mar 7, 2019
- Micron Technology, Inc.
- Emiliano Faraoni
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Systems and Memory Programming Methods
- Publication number 20190066784
- Publication date Feb 28, 2019
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUITRY AND METHODS FOR PROGRAMMING RESISTIVE RANDOM ACCESS MEMOR...
- Publication number 20190051352
- Publication date Feb 14, 2019
- Microsemi SoC Corp.
- John L. McCollum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, SYSTEM AND DEVICE FOR NON-VOLATILE MEMORY DEVICE OPERATION
- Publication number 20190051349
- Publication date Feb 14, 2019
- ARM Ltd.
- Bal S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMRISTIVE ARRAYS WITH A WAVEFORM GENERATION DEVICE
- Publication number 20190043577
- Publication date Feb 7, 2019
- Brent Buchanan
- G11 - INFORMATION STORAGE
Information Patent Application
SELECT DEVICE FOR MEMORY CELL APPLICATIONS
- Publication number 20190006420
- Publication date Jan 3, 2019
- Micron Technology, Inc.
- David H. Wells
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY
- Publication number 20180342277
- Publication date Nov 29, 2018
- Intel Corporation
- Liqiong WEI
- G11 - INFORMATION STORAGE
Information Patent Application
2T-1R ARCHITECTURE FOR RESISTIVE RAM
- Publication number 20180330782
- Publication date Nov 15, 2018
- Hefei Reliance Memory Limited
- Deepak Chandra SEKAR
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE VARIABLE ELEMENT METHODS AND APPARATUSES
- Publication number 20180166138
- Publication date Jun 14, 2018
- Micron Technology, Inc.
- Seshadri K. Kolluri
- G11 - INFORMATION STORAGE

Write using write potential applied to access device gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Current and voltage limit circuitry for resistive random access mem...

2T-1R architecture for resistive ram

Resistance change memory cell circuits and methods

STDP with synaptic fatigue for learning of spike-time-coded pattern...

Two-terminal non-volatile memory cell for decoupled read and write...

2T-1R architecture for resistive RAM

Crossbar array with reduced disturbance

Semiconductor device including variable resistance element

Resistance change memory cell circuits and methods

STDP with synaptic fatigue for learning of spike-time-coded pattern...

Three-dimensional nonvolatile memory device having resistance chang...

Memory devices and memory operational methods

STDP with synaptic fatigue for learning of spike-time-coded pattern...

1T-1R architecture for resistive random access memory

Nonvolatile memory cells having an embedded selection element and n...

Semiconductor device including variable resistance layer

2T-1R architecture for resistive RAM

Semiconductor device including variable resistance element

Apparatus for low power write and read operations for resistive memory

Memory systems and memory programming methods

Memory systems and memory programming methods

Resistance change memory cell circuits and methods

Memory circuit and formation method thereof

Memory circuit and formation method thereof

Method, system and device for non-volatile memory device operation

Programmable artificial neuron and associated programming method

1T-1R architecture for resistive random access memory

Resistance change memory cell circuits and methods

Circuitry and methods for programming resistive random access memor...

2T-1R architecture for resistive ram

Patents Applicationslast 30 patents

CURRENT AND VOLTAGE LIMIT CIRCUITRY FOR RESISTIVE RANDOM ACCESS MEM...

2T-1R ARCHITECTURE FOR RESISTIVE RAM

CROSSBAR ARRAY WITH REDUCED DISTURBANCE

TWO-TERMINAL NON-VOLATILE MEMORY CELL FOR DECOUPLED READ AND WRITE...

CURRENT AND VOLTAGE LIMIT CIRCUITRY FOR RESISTIVE RANDOM ACCESS MEM...

SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE ELEMENT

2T-1R ARCHITECTURE FOR RESISTIVE RAM

THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICE HAVING RESISTANCE CHANG...

SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE ELEMENT

NONVOLATILE MEMORY CELLS HAVING AN EMBEDDED SELECTION ELEMENT AND N...

2T-1R ARCHITECTURE FOR RESISTIVE RAM

CIRCUITRY AND METHODS FOR PROGRAMMING RESISTIVE RANDOM ACCESS MEMOR...

Crossbar array with reduced disturbance

PROGRAMMABLE ARTIFICIAL NEURON AND ASSOCIATED PROGRAMMING METHOD

MEMORY CIRCUIT AND FORMATION METHOD THEREOF

APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY

1T-1R ARCHITECTURE FOR RESISTIVE RANDOM ACCESS MEMORY

Memory Devices and Memory Operational Methods

RESISTIVE MEMORY DEVICE HAVING REDUCED CHIP SIZE AND OPERATION METH...

2T-1R ARCHITECTURE FOR RESISTIVE RAM

Memory Devices and Memory Operational Methods

Memory Systems and Memory Programming Methods

Memory Systems and Memory Programming Methods

CIRCUITRY AND METHODS FOR PROGRAMMING RESISTIVE RANDOM ACCESS MEMOR...

METHOD, SYSTEM AND DEVICE FOR NON-VOLATILE MEMORY DEVICE OPERATION

MEMRISTIVE ARRAYS WITH A WAVEFORM GENERATION DEVICE

SELECT DEVICE FOR MEMORY CELL APPLICATIONS

APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY

2T-1R ARCHITECTURE FOR RESISTIVE RAM

RESISTANCE VARIABLE ELEMENT METHODS AND APPARATUSES