Writing or programming circuits or methods

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G11C13/0069

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GPHYSICS G11Information storage G11CSTATIC STORES G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00

Current Industry

G11C13/0069Writing or programming circuits or methods

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory cell array circuit and method of forming the same
- Patent number 12,165,705
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chin-I Su
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with write pulse trimming
- Patent number 12,165,704
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hiroki Noguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for resetting an array of resistive memory cells
- Patent number 12,165,706
- Issue date Dec 10, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gabriel Molas
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 12,159,669
- Issue date Dec 3, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Internal reference resistor for non-volatile memory
- Patent number 12,159,667
- Issue date Dec 3, 2024
- Micron Technology, Inc.
- Neil Petrie
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level memory programming and readout
- Patent number 12,153,823
- Issue date Nov 26, 2024
- Intel Corporation
- Davide Fugazza
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Read and write circuit of three-dimensional phase-change memory
- Patent number 12,154,621
- Issue date Nov 26, 2024
- Huazhong University of Science & Technology
- Xingsheng Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
ReRAM memory array that includes ReRAM memory cells having a ReRAM...
- Patent number 12,154,622
- Issue date Nov 26, 2024
- Microsemi SoC Corp.
- Victor Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Differential programming of two-terminal memory with program detect...
- Patent number 12,154,624
- Issue date Nov 26, 2024
- Crossbar, Inc.
- Hagop Nazarian
- G11 - INFORMATION STORAGE
Information Patent Grant
Driver circuit for phase-change memory cells and method of driving...
- Patent number 12,148,470
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Agatino Massimo Maccarrone
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing memory system including a storage device
- Patent number 12,148,469
- Issue date Nov 19, 2024
- Kioxia Corporation
- Tadashi Miyakawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 12,148,472
- Issue date Nov 19, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Cross-point array IHOLD read margin improvement
- Patent number 12,148,459
- Issue date Nov 19, 2024
- SanDisk Technologies LLC
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Grant
Reconfigurable computational memory device, operation method of the...
- Patent number 12,148,471
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensional stacked semiconductor memory
- Patent number 12,144,189
- Issue date Nov 12, 2024
- Kioxia Corporation
- Hidehiro Shiga
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of training a logistic regression classifier with a resistiv...
- Patent number 12,136,022
- Issue date Nov 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Thomas Dalgaty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Calibration methods and structures for partitioned memory architect...
- Patent number 12,136,468
- Issue date Nov 5, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Grant
Forming-free random-access memory (RRAM) devices
- Patent number 12,137,622
- Issue date Nov 5, 2024
- TetraMem Inc.
- Minxian Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Triggering of stronger write pulses in a memory device based on pri...
- Patent number 12,131,778
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for controlling gradual conductance change in...
- Patent number 12,125,527
- Issue date Oct 22, 2024
- Jun-sung Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive memory device for matrix-vector multiplications
- Patent number 12,125,531
- Issue date Oct 22, 2024
- International Business Machines Corporation
- Riduan Khaddam-Aljameh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Error correction for identifier data generated from unclonable char...
- Patent number 12,119,058
- Issue date Oct 15, 2024
- Crossbar, Inc.
- Mehdi Asnaashari
- G11 - INFORMATION STORAGE
Information Patent Grant
Write method for differential resistive memories
- Patent number 12,119,059
- Issue date Oct 15, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Bastien Giraud
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory including phase-change elements in series with...
- Patent number 12,120,967
- Issue date Oct 15, 2024
- STMicroelectronics S.r.l.
- Giovanni Campardo
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory cell
- Patent number 12,114,580
- Issue date Oct 8, 2024
- Paolo Giuseppe Cappelletti
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of equalizing bit error rates of memory device
- Patent number 12,105,585
- Issue date Oct 1, 2024
- Samsung Electronics Co., Ltd.
- Eun-chu Oh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Partitioned memory architecture with dual resistor memory elements...
- Patent number 12,106,804
- Issue date Oct 1, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-step pre-read for write operations in memory devices
- Patent number 12,106,803
- Issue date Oct 1, 2024
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage device and data writing method
- Patent number 12,100,448
- Issue date Sep 24, 2024
- Huawei Technologies Co., Ltd.
- Bin Gao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Differential programming of two-terminal resistive switching memory...
- Patent number 12,100,449
- Issue date Sep 24, 2024
- Crossbar, Inc.
- Hagop Nazarian
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
COMPENSATING NON-IDEALITY OF A NEUROMORPHIC MEMORY DEVICE
- Publication number 20240420762
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Benedikt Kersting
- G11 - INFORMATION STORAGE
Information Patent Application
BACK END DIELECTRIC-BASED MEMORY STRUCTURE IN A SEMICONDUCTOR DEVICE
- Publication number 20240421036
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Application
ENDURANCE, POWER, AND PERFORMANCE IMPROVEMENT LOGIC FOR A MEMORY ARRAY
- Publication number 20240420761
- Publication date Dec 19, 2024
- Numem Inc.
- Jack Guedj
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY BASED ONE-TIME-PROGRAMMABLE MEMORY D...
- Publication number 20240412785
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Cheng Chou
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING
- Publication number 20240404590
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS
- Publication number 20240395301
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MATERIAL SWITCH CIRCUIT FOR ENHANCED SIGNAL ISOLATION...
- Publication number 20240397733
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Wei Ting Hsieh
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR READING A MULTI-LEVEL NON-VOLATILE MEMORY DEVICE, IN PAR...
- Publication number 20240386954
- Publication date Nov 21, 2024
- STMicroelectronics International N.V.
- Xavier LECOQ
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND METHOD FOR DRIVING SAME
- Publication number 20240389361
- Publication date Nov 21, 2024
- DAEGU GYEONGBUK INSTITUTE OF SCIENCE & TECHNOLOGY
- Hyeon Jun LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY AND READING, WRITING AND ERASING METHODS THEREOF
- Publication number 20240379158
- Publication date Nov 14, 2024
- Shanghai IC R&D Center Co., Ltd.
- Lingyi GUO
- G11 - INFORMATION STORAGE
Information Patent Application
OPTICAL PROPERTY STORAGE DEVICE AND SYSTEM USING SAME
- Publication number 20240379156
- Publication date Nov 14, 2024
- Kookmin University Industry Academy Cooperation Foundation
- Dae Hwan KIM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONFIGURABLE RESISTIVITY FOR LINES IN A MEMORY DEVICE
- Publication number 20240379157
- Publication date Nov 14, 2024
- Micron Technology, Inc.
- Koushik Banerjee
- G11 - INFORMATION STORAGE
Information Patent Application
OTS-BASED DYNAMIC STORAGE STRUCTURE AND OPERATION METHOD THEREOF
- Publication number 20240379159
- Publication date Nov 14, 2024
- HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Hao TONG
- G11 - INFORMATION STORAGE
Information Patent Application
RANDOM ACCESS MEMORY APPARATUS, MEMORY SYSTEM, AND METHOD FOR OPERA...
- Publication number 20240371439
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- JUI-JEN WU
- G11 - INFORMATION STORAGE
Information Patent Application
CONFIGURATION BIT CIRCUIT FOR PROGRAMMABLE LOGIC DEVICE INCLUDING P...
- Publication number 20240371440
- Publication date Nov 7, 2024
- Revol-Ver Inc.
- Sung Lae CHO
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY STORED WITH ENCODED DATA
- Publication number 20240371442
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Win-San KHWA
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-SPEED AND LARGE-CURRENT ADJUSTABLE PULSE CIRCUIT, OPERATING CI...
- Publication number 20240371438
- Publication date Nov 7, 2024
- HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Xingsheng WANG
- G11 - INFORMATION STORAGE
Information Patent Application
CONFIGURATION BIT CIRCUIT FOR PROGRAMMABLE LOGIC DEVICE WITH PHASE...
- Publication number 20240371441
- Publication date Nov 7, 2024
- Revol-Ver Inc.
- Sung Lae CHO
- G11 - INFORMATION STORAGE
Information Patent Application
INEQUALITY CHECK WITH TERNARY CAM
- Publication number 20240363163
- Publication date Oct 31, 2024
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP.
- RON M. ROTH
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL INCLUDING PROGRAMMABLE RESISTORS WITH TRANSISTOR COMPON...
- Publication number 20240355388
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY WITH LOW VOLTAGE OPERATION
- Publication number 20240355389
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zheng-Jun Lin
- G11 - INFORMATION STORAGE
Information Patent Application
THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...
- Publication number 20240357840
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRON BEAM PROBING TECHNIQUES AND RELATED STRUCTURES
- Publication number 20240355685
- Publication date Oct 24, 2024
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Application
SOCKET DESIGN FOR A MEMORY DEVICE
- Publication number 20240347107
- Publication date Oct 17, 2024
- Micron Technology, Inc.
- Amitava Majumdar
- G11 - INFORMATION STORAGE
Information Patent Application
SHAPE DETECTION TRANSFORMATION USING MEMRISTIVE IN-MEMORY COMPUTING
- Publication number 20240346660
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Ghazi Sarwat Syed
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240341206
- Publication date Oct 10, 2024
- SK HYNIX INC.
- Tae Jung HA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240339155
- Publication date Oct 10, 2024
- SK HYNIX INC.
- Jeong Hwan SONG
- G11 - INFORMATION STORAGE
Information Patent Application
CROSSBAR CIRCUITS FOR PERFORMING CONVOLUTION OPERATIONS
- Publication number 20240339157
- Publication date Oct 10, 2024
- TetraMem Inc.
- Miao Hu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE ARCHITECTURE USING MULTIPLE PHYSICAL CELLS PER BIT TO...
- Publication number 20240339149
- Publication date Oct 10, 2024
- Micron Technology, Inc.
- Joseph Michael McCrate
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING MEMORY
- Publication number 20240339156
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Che Lee
- G11 - INFORMATION STORAGE

Writing or programming circuits or methods

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory cell array circuit and method of forming the same

Memory device with write pulse trimming

Method for resetting an array of resistive memory cells

Semiconductor memory having both volatile and non-volatile function...

Internal reference resistor for non-volatile memory

Multi-level memory programming and readout

Read and write circuit of three-dimensional phase-change memory

ReRAM memory array that includes ReRAM memory cells having a ReRAM...

Differential programming of two-terminal memory with program detect...

Driver circuit for phase-change memory cells and method of driving...

Method for manufacturing memory system including a storage device

Semiconductor memory having both volatile and non-volatile function...

Cross-point array IHOLD read margin improvement

Reconfigurable computational memory device, operation method of the...

Three dimensional stacked semiconductor memory

Method of training a logistic regression classifier with a resistiv...

Calibration methods and structures for partitioned memory architect...

Forming-free random-access memory (RRAM) devices

Triggering of stronger write pulses in a memory device based on pri...

Apparatus and method for controlling gradual conductance change in...

Resistive memory device for matrix-vector multiplications

Error correction for identifier data generated from unclonable char...

Write method for differential resistive memories

Phase-change memory including phase-change elements in series with...

Phase-change memory cell

Method of equalizing bit error rates of memory device

Partitioned memory architecture with dual resistor memory elements...

Multi-step pre-read for write operations in memory devices

Storage device and data writing method

Differential programming of two-terminal resistive switching memory...

Patents Applicationslast 30 patents

COMPENSATING NON-IDEALITY OF A NEUROMORPHIC MEMORY DEVICE

BACK END DIELECTRIC-BASED MEMORY STRUCTURE IN A SEMICONDUCTOR DEVICE

ENDURANCE, POWER, AND PERFORMANCE IMPROVEMENT LOGIC FOR A MEMORY ARRAY

RESISTIVE RANDOM ACCESS MEMORY BASED ONE-TIME-PROGRAMMABLE MEMORY D...

TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING

CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS

PHASE CHANGE MATERIAL SWITCH CIRCUIT FOR ENHANCED SIGNAL ISOLATION...

METHOD FOR READING A MULTI-LEVEL NON-VOLATILE MEMORY DEVICE, IN PAR...

NON-VOLATILE MEMORY DEVICE AND METHOD FOR DRIVING SAME

MEMORY AND READING, WRITING AND ERASING METHODS THEREOF

OPTICAL PROPERTY STORAGE DEVICE AND SYSTEM USING SAME

CONFIGURABLE RESISTIVITY FOR LINES IN A MEMORY DEVICE

OTS-BASED DYNAMIC STORAGE STRUCTURE AND OPERATION METHOD THEREOF

RANDOM ACCESS MEMORY APPARATUS, MEMORY SYSTEM, AND METHOD FOR OPERA...

CONFIGURATION BIT CIRCUIT FOR PROGRAMMABLE LOGIC DEVICE INCLUDING P...

NON-VOLATILE MEMORY STORED WITH ENCODED DATA

HIGH-SPEED AND LARGE-CURRENT ADJUSTABLE PULSE CIRCUIT, OPERATING CI...

CONFIGURATION BIT CIRCUIT FOR PROGRAMMABLE LOGIC DEVICE WITH PHASE...

INEQUALITY CHECK WITH TERNARY CAM

MEMORY CELL INCLUDING PROGRAMMABLE RESISTORS WITH TRANSISTOR COMPON...

RESISTIVE MEMORY WITH LOW VOLTAGE OPERATION

THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...

ELECTRON BEAM PROBING TECHNIQUES AND RELATED STRUCTURES

SOCKET DESIGN FOR A MEMORY DEVICE

SHAPE DETECTION TRANSFORMATION USING MEMRISTIVE IN-MEMORY COMPUTING

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE

CROSSBAR CIRCUITS FOR PERFORMING CONVOLUTION OPERATIONS

MEMORY DEVICE ARCHITECTURE USING MULTIPLE PHYSICAL CELLS PER BIT TO...

METHOD FOR PROGRAMMING MEMORY