Writing or programming circuits or methods

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CPC
G11C13/0069

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00

Current Industry

G11C13/0069Writing or programming circuits or methods

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Two-terminal metastable mixed-conductor memristive devices
- Patent number 12,229,652
- Issue date Feb 18, 2025
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device including memory cell including variable resistance e...
- Patent number 12,230,322
- Issue date Feb 18, 2025
- Kioxia Corporation
- Ryousuke Takizawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic inhibit voltage to reduce write power for random-access memory
- Patent number 12,230,320
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zheng-Jun Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell array circuit and method of forming the same
- Patent number 12,230,323
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chin-I Su
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching device having bi-directional drive characteristics and me...
- Patent number 12,232,430
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Yun Heub Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Chip containing an onboard non-volatile memory comprising a phase-c...
- Patent number 12,232,435
- Issue date Feb 18, 2025
- STMicroelectronics (Crolles 2) SAS
- Franck Arnaud
- G11 - INFORMATION STORAGE
Information Patent Grant
Signal processing apparatus and signal processing method
- Patent number 12,226,216
- Issue date Feb 18, 2025
- Tsinghua University
- Huaqiang Wu
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Device with neural network
- Patent number 12,230,321
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Jung-Hoon Chun
- G11 - INFORMATION STORAGE
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,232,336
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit and method of operating same
- Patent number 12,229,006
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Lien Linus Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High-speed and large-current adjustable pulse circuit, operating ci...
- Patent number 12,224,006
- Issue date Feb 11, 2025
- Huazhong University of Science & Technology
- Xingsheng Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for determining a manufacturing parameter of a resistive ran...
- Patent number 12,224,007
- Issue date Feb 11, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gabriel Molas
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for efficient matrix multiplication
- Patent number 12,223,009
- Issue date Feb 11, 2025
- Rain Neuromorphics Inc.
- Jack David Kendall
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor storage device
- Patent number 12,219,889
- Issue date Feb 4, 2025
- Kioxia Corporation
- Masahiro Takahashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Sequence alignment with memory arrays
- Patent number 12,217,796
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Justin Eno
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Grant
Three dimensional memory and methods of forming the same
- Patent number 12,219,765
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell cycling to minimize resistive memory random number correlation
- Patent number 12,211,549
- Issue date Jan 28, 2025
- Crossbar, Inc.
- Mehdi Asnaashari
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamically boosting read voltage for a memory device
- Patent number 12,205,641
- Issue date Jan 21, 2025
- Micron Technology, Inc.
- Nicola Ciocchini
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device
- Patent number 12,205,644
- Issue date Jan 21, 2025
- SK hynix Inc.
- Jeong Hwan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Overwrite read methods for resistance switching memory devices
- Patent number 12,205,640
- Issue date Jan 21, 2025
- SanDisk Technologies LLC
- Michael K. Grobis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device
- Patent number 12,205,642
- Issue date Jan 21, 2025
- Kioxia Corporation
- Kunifumi Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having physical unclonable function and memory system...
- Patent number 12,205,643
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Jooyong Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and programming method thereof
- Patent number 12,205,639
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jeremy Guy
- G11 - INFORMATION STORAGE
Information Patent Grant
Spike timing dependent plasticity write method and synapse array ap...
- Patent number 12,198,036
- Issue date Jan 14, 2025
- Winbond Electronics Corp.
- Yasuhiro Tomita
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated circuit including a physically unclonable function devic...
- Patent number 12,198,756
- Issue date Jan 14, 2025
- STMicroelectronics S.r.l.
- Antonino Conte
- G11 - INFORMATION STORAGE
Information Patent Grant
Differential programming of two-terminal memory with intrinsic erro...
- Patent number 12,198,760
- Issue date Jan 14, 2025
- Crossbar, Inc.
- Hagop Nazarian
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method for operating the same
- Patent number 12,198,757
- Issue date Jan 14, 2025
- Macronix International Co., Ltd.
- Yu-Yu Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and write method thereof
- Patent number 12,198,758
- Issue date Jan 14, 2025
- Winbond Electronics Corp.
- Hajime Aoki
- G11 - INFORMATION STORAGE
Information Patent Grant
Crossbar array with reduced disturbance
- Patent number 12,198,761
- Issue date Jan 14, 2025
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and method of operating the same
- Patent number 12,190,949
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ULTRA-THIN PHASE-CHANGE MEMORY DEVICE WITH LATERAL ELECTRODE CONFIG...
- Publication number 20250063958
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Vara Sudananda Prasad Jonnalagadda
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20250061945
- Publication date Feb 20, 2025
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
CROSSBAR CIRCUITS INCLUDING RRAM DEVICES WITH MINIMIZED WRITE DISTU...
- Publication number 20250054541
- Publication date Feb 13, 2025
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Application
DATA WRITING OPERATION METHOD AND DEVICE FOR RESISTIVE RANDOM ACCES...
- Publication number 20250054544
- Publication date Feb 13, 2025
- XIAMEN INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
- Anqiao CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND MEMORY MINI-ARRAY THEREOF WITH I...
- Publication number 20250046372
- Publication date Feb 6, 2025
- UNITED MICROELECTRONICS CORP.
- Shu-Hung Yu
- G11 - INFORMATION STORAGE
Information Patent Application
TRIGGERING OF STRONGER WRITE PULSES IN A MEMORY DEVICE BASED ON PRI...
- Publication number 20250046373
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
Storage Chip, Storage Apparatus, and Electronic Device
- Publication number 20250048653
- Publication date Feb 6, 2025
- Huawei Technologies Co., Ltd
- Xiang Li
- G11 - INFORMATION STORAGE
Information Patent Application
PROCESS FOR COINTEGRATION OF TWO PHASE CHANGE MEMORY (PCM) ARRAYS H...
- Publication number 20250048940
- Publication date Feb 6, 2025
- STMicroelectronics International N.V.
- Andrea REDAELLI
- G11 - INFORMATION STORAGE
Information Patent Application
ReRAM MEMORY ARRAY THAT INCLUDES ReRAM MEMORY CELLS HAVING A ReRAM...
- Publication number 20250037764
- Publication date Jan 30, 2025
- Microsemi SoC Corp.
- Victor Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
SUPPRESSING RANDOM TELEGRAPH NOISE IN CROSSBAR CIRCUITS
- Publication number 20250037765
- Publication date Jan 30, 2025
- TetraMem Inc.
- Mingyi Rao
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20250037766
- Publication date Jan 30, 2025
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CROSS-POINT OVONIC FRUSTUM MEMORY DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20250040150
- Publication date Jan 30, 2025
- Western Digital Technologies, Inc.
- Lei WAN
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY UNIT WITH ONE-WAY CONDUCTION CHARACT...
- Publication number 20250029655
- Publication date Jan 23, 2025
- National Tsing Hua University
- Ya-Chin KING
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE CHANGE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APPAR...
- Publication number 20250029654
- Publication date Jan 23, 2025
- Kabushiki Kaisha Toshiba
- Koichi MIZUSHIMA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING VARIABLE SERIAL RESISTIVE ELEMENT HAVING VO...
- Publication number 20250029656
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Yumin KIM
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF OPERATING PHASE CHANGE MEMORIES, CORRESPONDING DEVICE AND...
- Publication number 20250022509
- Publication date Jan 16, 2025
- STMicroelectronics International N.V.
- Francesco TOMAIUOLO
- G11 - INFORMATION STORAGE
Information Patent Application
FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES
- Publication number 20250024760
- Publication date Jan 16, 2025
- TetraMem Inc.
- Minxian Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES
- Publication number 20250014641
- Publication date Jan 9, 2025
- Micron Technology, Inc.
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY INCLUDING PHASE-CHANGE ELEMENTS IN SERIES WITH...
- Publication number 20250008847
- Publication date Jan 2, 2025
- STMicroelectronics S.r.l
- Giovanni Campardo
- G11 - INFORMATION STORAGE
Information Patent Application
COMPENSATING NON-IDEALITY OF A NEUROMORPHIC MEMORY DEVICE
- Publication number 20240420762
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Benedikt Kersting
- G11 - INFORMATION STORAGE
Information Patent Application
BACK END DIELECTRIC-BASED MEMORY STRUCTURE IN A SEMICONDUCTOR DEVICE
- Publication number 20240421036
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Application
ENDURANCE, POWER, AND PERFORMANCE IMPROVEMENT LOGIC FOR A MEMORY ARRAY
- Publication number 20240420761
- Publication date Dec 19, 2024
- Numem Inc.
- Jack Guedj
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY BASED ONE-TIME-PROGRAMMABLE MEMORY D...
- Publication number 20240412785
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Cheng Chou
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING
- Publication number 20240404590
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS
- Publication number 20240395301
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MATERIAL SWITCH CIRCUIT FOR ENHANCED SIGNAL ISOLATION...
- Publication number 20240397733
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Wei Ting Hsieh
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR READING A MULTI-LEVEL NON-VOLATILE MEMORY DEVICE, IN PAR...
- Publication number 20240386954
- Publication date Nov 21, 2024
- STMicroelectronics International N.V.
- Xavier LECOQ
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND METHOD FOR DRIVING SAME
- Publication number 20240389361
- Publication date Nov 21, 2024
- DAEGU GYEONGBUK INSTITUTE OF SCIENCE & TECHNOLOGY
- Hyeon Jun LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY AND READING, WRITING AND ERASING METHODS THEREOF
- Publication number 20240379158
- Publication date Nov 14, 2024
- Shanghai IC R&D Center Co., Ltd.
- Lingyi GUO
- G11 - INFORMATION STORAGE
Information Patent Application
OPTICAL PROPERTY STORAGE DEVICE AND SYSTEM USING SAME
- Publication number 20240379156
- Publication date Nov 14, 2024
- Kookmin University Industry Academy Cooperation Foundation
- Dae Hwan KIM
- G06 - COMPUTING CALCULATING COUNTING

Writing or programming circuits or methods

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Two-terminal metastable mixed-conductor memristive devices

Memory device including memory cell including variable resistance e...

Dynamic inhibit voltage to reduce write power for random-access memory

Memory cell array circuit and method of forming the same

Switching device having bi-directional drive characteristics and me...

Chip containing an onboard non-volatile memory comprising a phase-c...

Signal processing apparatus and signal processing method

Device with neural network

Threshold voltage-modulated memory device using variable-capacitanc...

Integrated circuit and method of operating same

High-speed and large-current adjustable pulse circuit, operating ci...

Method for determining a manufacturing parameter of a resistive ran...

Systems and methods for efficient matrix multiplication

Semiconductor storage device

Sequence alignment with memory arrays

Three dimensional memory and methods of forming the same

Cell cycling to minimize resistive memory random number correlation

Dynamically boosting read voltage for a memory device

Nonvolatile memory device

Overwrite read methods for resistance switching memory devices

Memory device

Memory device having physical unclonable function and memory system...

Memory device and programming method thereof

Spike timing dependent plasticity write method and synapse array ap...

Integrated circuit including a physically unclonable function devic...

Differential programming of two-terminal memory with intrinsic erro...

Memory device and method for operating the same

Semiconductor memory device and write method thereof

Crossbar array with reduced disturbance

Memory circuit and method of operating the same

Patents Applicationslast 30 patents

ULTRA-THIN PHASE-CHANGE MEMORY DEVICE WITH LATERAL ELECTRODE CONFIG...

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

CROSSBAR CIRCUITS INCLUDING RRAM DEVICES WITH MINIMIZED WRITE DISTU...

DATA WRITING OPERATION METHOD AND DEVICE FOR RESISTIVE RANDOM ACCES...

RESISTIVE RANDOM ACCESS MEMORY AND MEMORY MINI-ARRAY THEREOF WITH I...

TRIGGERING OF STRONGER WRITE PULSES IN A MEMORY DEVICE BASED ON PRI...

Storage Chip, Storage Apparatus, and Electronic Device

PROCESS FOR COINTEGRATION OF TWO PHASE CHANGE MEMORY (PCM) ARRAYS H...

ReRAM MEMORY ARRAY THAT INCLUDES ReRAM MEMORY CELLS HAVING A ReRAM...

SUPPRESSING RANDOM TELEGRAPH NOISE IN CROSSBAR CIRCUITS

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

CROSS-POINT OVONIC FRUSTUM MEMORY DEVICE AND METHOD OF MAKING THE SAME

RESISTIVE RANDOM ACCESS MEMORY UNIT WITH ONE-WAY CONDUCTION CHARACT...

RESISTANCE CHANGE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APPAR...

MEMORY DEVICE INCLUDING VARIABLE SERIAL RESISTIVE ELEMENT HAVING VO...

METHOD OF OPERATING PHASE CHANGE MEMORIES, CORRESPONDING DEVICE AND...

FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES

MULTI-STEP PRE-READ FOR WRITE OPERATIONS IN MEMORY DEVICES

PHASE-CHANGE MEMORY INCLUDING PHASE-CHANGE ELEMENTS IN SERIES WITH...

COMPENSATING NON-IDEALITY OF A NEUROMORPHIC MEMORY DEVICE

BACK END DIELECTRIC-BASED MEMORY STRUCTURE IN A SEMICONDUCTOR DEVICE

ENDURANCE, POWER, AND PERFORMANCE IMPROVEMENT LOGIC FOR A MEMORY ARRAY

RESISTIVE RANDOM ACCESS MEMORY BASED ONE-TIME-PROGRAMMABLE MEMORY D...

TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING

CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS

PHASE CHANGE MATERIAL SWITCH CIRCUIT FOR ENHANCED SIGNAL ISOLATION...

METHOD FOR READING A MULTI-LEVEL NON-VOLATILE MEMORY DEVICE, IN PAR...

NON-VOLATILE MEMORY DEVICE AND METHOD FOR DRIVING SAME

MEMORY AND READING, WRITING AND ERASING METHODS THEREOF

OPTICAL PROPERTY STORAGE DEVICE AND SYSTEM USING SAME