Claims
- 1. A 3-level inverter comprising:
a plurality of power semiconductor switching elements respectively connected in serial relation; a diode connected in reverse parallel relation with each of said plurality of power semiconductor switching elements; and a plurality of snubber circuits for protecting said plurality of power semiconductor switching elements; wherein the number of said plurality of snubber circuits is smaller by one as compared with the number of said plurality of power semiconductor switching circuits, one of said plurality of snubber circuits being connected with a DC neutral point and AC output terminal; and wherein said one of a plurality of snubber circuits connected with said DC neutral point and said AC output terminal is a circuit including a capacitor connected in serial relation with a resistor relation.
- 2. A 3-level inverter according to claim 1, wherein said plurality of snubber circuits include a snubber circuit connected with positive potential of a DC power source and a DC neutral point, and a snubber circuit connected with negative potential of a DC power source and a DC neutral point.
- 3. A 3-level inverter according to claim 1, wherein said plurality of power semiconductor switching elements are composed of 4 IGBTs.
- 4. A 3-level inverter according to claim 1, wherein said plurality of power semiconductor switching elements are composed of 4 MOSFETs.
- 5. A 3-level inverter according to claim 1, wherein said 3-level inverter is a power transducer for driving an AC electric motor.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2001-236317 |
Aug 2001 |
JP |
|
CROSS REFERENCE TO RELATED APPLICATION
[0001] This is a continuation of U.S. application Ser. No. 10/097,567, filed Mar. 15, 2002, the subject matter of which is incorporated by reference herein.
Continuations (1)
|
Number |
Date |
Country |
Parent |
10097567 |
Mar 2002 |
US |
Child |
10445959 |
May 2003 |
US |