The present invention relates to a 3-level power converter that outputs a 3-level voltage by using a switching element such as IGBT.
As shown in patent document 1, a prior 3-level power converter includes a DC voltage source having a positive terminal, an intermediate terminal, and a negative terminal, first and second IGBT sequentially connected in series between the positive terminal and an AC output terminal, a first coupling diode connected between a connection point between the first and second IGBT and the intermediate terminal, third and fourth IGBT sequentially connected in series between the AC output terminal and the negative terminal, and a second coupling diode connected between a connection point between the third and fourth IGBT and the intermediate terminal, and the power converter is configured to appropriately perform on/off control of the first to fourth IGBT so as to output a 3-level voltage from the AC output terminal.
Patent document 1: Japanese Patent No. 3,229,931
In a prior 3-level power converter, since four modules each mounted with one IGBT are used, the converter has a large size, which causes large floating inductance of each of wirings interconnecting between respective elements, leading to a high turn-off surge voltage.
A method of controlling the turn-off surge voltage includes a method where a snubber circuit using a capacitor is separately connected in parallel to each IGBT for absorbing energy of floating inductance of a wiring. However, when wiring inductance is increased, capacitance of the capacitor of the snubber circuit, which absorbs energy of the wiring inductance, is also increased, in addition, although amount of heat generated by an element does not vary depending on an element layout, a cooler sometimes becomes large, leading to reduction in reliability due to increase in loss in the converter, increase in size of a converter shape, increase in converter cost, and increase in number of components.
The invention was made to solve the above problem, and provides a 3-level power converter, which is reduced in size of the converter, reduced in floating inductance of each of wirings interconnecting between respective elements, and easily attached with a snubber circuit.
The invention includes a 3-level power converter, which includes a DC voltage source having a positive terminal, an intermediate terminal, and a negative terminal, first and second switching elements sequentially connected in series between the positive terminal and an AC output terminal, a first coupling diode connected between a connection point between the first and second switching elements and the intermediate terminal, third and fourth switching elements sequentially connected in series between the AC output terminal and the negative terminal, and a second coupling diode connected between a connection point between the third and fourth switching elements and the intermediate terminal, and performs on/off control of the first to fourth switching elements so as to output a 3-level voltage from the AC output terminal; wherein the power converter has a first module including a set of the first and fourth switching elements as a configuration unit, a second module including a set of the second and third switching elements as a configuration unit, a third module including the first coupling diode, and a fourth module including the second coupling diode, and the second module, the fourth module, the third module, and the first module are sequentially arranged in a line from a position near the AC output terminal.
According to the invention, a 3-level power converter may be achieved, which is reduced in size of the converter, reduced in floating inductance of each of wirings interconnecting between respective elements, and easily attached with a snubber circuit depending on capacitance of the converter.
A positive arm portion between the positive terminal P of the DC voltage source and an AC output terminal AC is configured by first and second IGBT 1 and 2, and a first coupling diode 5, wherein a collector of the first IGBT 1 is connected to the positive terminal P, and an emitter thereof is connected to a collector of the second IGBT 2 and a cathode of the first coupling diode 5. An anode of the first coupling diode 5 is connected to the intermediate terminal C, and an emitter of the second IGBT 2 is connected to the AC output terminal AC.
Next, a negative arm portion between the AC output terminal AC and the negative terminal N is configured by third and fourth IGBT 3 and 4, and a second coupling diode 6, wherein a collector of the third IGBT 3 is connected to the AC output terminal AC, and an emitter thereof is connected to a collector C of the fourth IGBT 4 and a anode of the second coupling diode 6. A cathode of the second coupling diode 6 is connected to the intermediate terminal C, and an emitter of the fourth IGBT 4 is connected to the negative terminal N.
Voltage dividing resistances Ra and Rb are connected in parallel to the first and second coupling diodes 5 and 6 respectively.
In the 3-level power converter configured as above, the first to fourth IGBT 1 to 4 are appropriately subjected to on/off control by a known method so as to output a 3-level voltage from the AC output terminal AC, and when the respective IGBT 1 to 4 are turned off, a high turn-off surge voltage is generated due to floating inductance of each of wirings interconnecting between the respective elements.
When the IGBT 2 is turned off, and respective flywheel diodes of the IGBT 3 and 4 are turned on as shown in
Each of the surge voltages is called turn-off surge voltage, and if the turn-off surge voltage is not suppressed within a safety operation range, the IGBT is broken.
In the case of the prior 3-level power converter, since four modules each mounted with one IGBT are connected in series, size becomes large, which increases floating inductance of each wiring, leading to increase in turn-off surge voltage. Therefore, a snubber circuit is typically attached to each IGBT in order to protect the IGBT from the turn-off surge voltage, which further causes increase in size of the converter.
Thus, in the 3-level power converter according to the embodiment 1 of the invention, a module including two IGBT elements is used as shown in
According to such a module arrangement configuration, compared with a configuration where four modules each mounted with one IGBT and two diode modules are arranged in a line, and elements of the respective modules are connected to one another as in the past, a converter can be reduced in size, and consequently floating inductance of each wiring can be reduced.
When a heat pipe is used as cooling means of each module, screw clamp portions 16 of the modules 11 to 14 are arranged in parallel along each of sides in a direction of inserting each heat pipe 15 as shown in
Embodiment 2 shows an example of a case that a snubber circuit is provided in the 3-level power converter of the embodiment 1.
In
A snubber circuit for the third IGBT 3 is formed by a diode D3 having a cathode connected to an emitter side of the third IGBT 3, a capacitor C3 connected between an anode side of the diode and an anode side of the first coupling diode a, and a discharge resistance R3 connected between a connection point between the capacitor and a cathode of the diode D3, and a negative terminal N.
Furthermore, a snubber circuit for the first IGBT 1 is formed by a capacitor C1 having one end connected to a collector side of the first IGBT 1, a diode D1 having a cathode connected to an emitter side of the first IGBT 1 and an anode connected to the other end of the capacitor C1, and a discharge resistance R1 connected between a connection point between the capacitor C1 and the diode D1, and the intermediate terminal C of the DC power supply.
A snubber circuit for the fourth IGBT 1 is formed by a capacitor C4 having one end connected to an emitter side of the fourth IGBT 4, a diode D4 having an anode connected to a collector side of the fourth IGBT 4 and a cathode connected to the other end of the capacitor C4, and a discharge resistance R4 connected between a connection point between the capacitor C4 and the diode D4, and the intermediate terminal C of the DC power supply.
In the embodiment 2, the respective first to fourth snubber circuits are configured as snubber units as shown in
a) shows an example of configuring a first snubber unit 21 by forming circuit portions, excepting the discharge resistances R2 and R3 in the snubber circuits for the second and third IGBT 2 and 3, on a common substrate,
In the figure, C and E show connection terminal portions corresponding to a cathode and an anode of each IGBT, A and K show connection terminal portions corresponding to a cathode and an anode of each coupling diode, and G1, G2, G3 and G4 show respective connection terminal portions to the discharge resistances R1 and R4, respectively.
If necessary, the first to fourth snubber units 21 to 24 shown in
The snubber circuits for the first and fourth IGBT being outer elements are sometimes not required depending on internal inductance of a main circuit. In such a case, only the first snubber unit 21 can be provided as shown in
In this way, the snubber units are divided into the units for the inner elements and the units for the outer elements. Thus, the snubber units may be appropriately used depending on size of inductance of the main circuit.
(a) of each figure shows a state where a side face of each of the modules 11 to 14 is covered with an insulating plate 40, and the insulating plate 40 is attached with the voltage dividing resistances Ra and Rb and the discharge resistances R1 to R4. (b) of each figure shows a state where the insulating plate 40 is removed so that a wiring board 50 for interconnecting between the elements may be seen.
When the snubber units 21 to 24 are not used, the insulating plate 40 is not provided, and the voltage dividing resistances Ra and Rb are directly provided on the modules 13 and 14 of the first and second coupling diodes respectively.
In the embodiment 1, the modules are in the module arrangement configuration where the modules 11 and 12 each including IGBT are disposed on both sides, and the module 13 including the second coupling diode, and the module 14 including the first coupling diode are sequentially arranged in a line between the modules 11 and 12. However, as shown in
Even in such a module arrangement configuration, a converter may be reduced in size, and consequently floating inductance of each wiring may be reduced, in addition, when the 3-level power converter is used for a large-capacity power converter, the snubber units 21 to 24 shown in
Moreover, when a trouble occurs in the upper elements or the lower elements, two modules must be replaced in the case of the module arrangement configuration in the embodiment 1. However, according to the module arrangement configuration according to the embodiment, only one module can be replaced.
While a case that IGBT was used as a switching element was described hereinbefore, the invention may be similarly used even for a different switching element such as a transistor, an intelligent power module, or FET, and exhibits the same advantage even in such a case.
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP2006/325359 | 12/20/2006 | WO | 00 | 6/5/2009 |
Publishing Document | Publishing Date | Country | Kind |
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WO2008/075418 | 6/26/2008 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
5459655 | Mori et al. | Oct 1995 | A |
5953222 | Mizutani | Sep 1999 | A |
6084788 | Mizutani | Jul 2000 | A |
Number | Date | Country |
---|---|---|
5-83947 | Apr 1993 | JP |
6-165524 | Jun 1994 | JP |
7-213076 | Aug 1995 | JP |
09233850 | Sep 1997 | JP |
10-14260 | Jan 1998 | JP |
11-332253 | Nov 1999 | JP |
3229931 | Nov 2001 | JP |
2002-153078 | May 2002 | JP |
Number | Date | Country | |
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20100315776 A1 | Dec 2010 | US |