3403439

Information

• Patent Grant
• 3403439

• References
• Source

• Patent Number

  3,403,439

• Date Filed

  Not available

• Date Issued

  Tuesday, October 1, 1968
  56 years ago

• CPC

  • H01L21/76297 - Dielectric isolation using EPIC techniques
  • Y10S148/029 - Differential crystal growth rates

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices