3913098

Information

• Patent Grant
• 3913098

• References
• Source

• Patent Number

  3,913,098

• Date Filed

  Not available

• Date Issued

  Tuesday, October 14, 1975
  49 years ago

• CPC

  • G01F23/241 - for discrete levels
  • G01F23/244 - comprising oscillating circuits
  • H03K3/313 - by the use, as active elements, of semiconductor devices with two electrodes, one or two potential-jump barriers, and exhibiting a negative resistance characteristic
  • H03K3/42 - by the use, as active elements, of opto-electronic devices
  • H03K4/793 - using tunnel diodes
  • H03K4/80 - using as active elements multi-layer diodes
  • H03K4/88 - using as active elements electrochemical cells or galvano-magnetic or photo-electric elements
  • H03K5/04 - by increasing duration by decreasing duration
  • H03K17/79 - controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
  • H03K17/7955 - using phototransistors

• US Classifications

  • 340 - Communications: electrical