The present invention relates to integrated circuit memory devices and, in particular, to a 4-transistor non-volatile memory (NVM) cell that utilizes a PMOS-NMOS-PMOS-NMOS structure to significantly reduce cell area and provide for very small programming current through utilization of reverse Fowler-Nordheim tunneling programming.
U.S. Pat. No. 7,164,606 B1, which issued on Jan. 16, 2007, to Poplevine et al., discloses an all PMOS 4-transistor non-volatile memory (NVM) cell that utilizes reverse Fowler-Nordheim tunneling for programming. U.S. Pat. No. 7,164,606 is hereby incorporated by reference herein in its entirety to provide background information regarding the present invention.
Referring to FIG. 1, as disclosed in U.S. Pat. No. 7,164,606, in accordance with the method of programming an NVM array that includes all-PMOS 4-transistor NVM cells having commonly-connected floating gates, for each cell 100 in the array that is to be programmed, all of the electrodes of the cell are grounded. Then, an inhibiting voltage VN is applied to the bulk-connected source region Vr of the cell's read transistor Pr, to the commonly-connected drain, bulk and source regions Ve of the cell's erase transistor Pe, and to the drain region Dr of the read transistor Pr. The source region Vp and the drain region Dp of the cell's programming transistor Pw are grounded. The bulk Vnw of the programming transistor Pw is optional; it can be grounded or it can remain at the inhibiting voltage VN. For all cells in the NVM array that are not selected for programming, the inhibiting voltage VN is applied to the Vr, Ve and Dr electrodes and is also applied to the Vp, Dp and Vnw electrodes. The control gate voltage Vc of the cell's control transistor Pc is then swept from 0V to a maximum programming voltage Vcmax in a programming time Tprog. The control gate voltage Vc is then ramped down from the maximum programming voltage Vcmax to 0V. All electrodes of the cell and the inhibiting voltage VN are then returned to ground.
The all-PMOS 4-transistor NVM cell programming technique disclosed in the '606 patent provides advantages of both low current consumption, allowing the ability to simultaneously program a large number of cells without the need for high current power sources, and a simple program sequence. However, the 4-transistor all-PMOS NVM cell occupies a relatively large area. Thus, it would be highly desirable to have available an NVM cell having reduced area, but that maintains the benefits of low programming current.
An embodiment of the present invention provides a 4-transistor non-volatile memory (NVM) cell having a PMOS-NMOS-PMOS-NMOS structure that comprises a PMOS program transistor having source, drain and bulk region electrodes and a gate electrode connected to a data storage node, an NMOS control transistor having source, drain and bulk region electrodes that are commonly-connected to receive a control voltage and a gate electrode connected to the data storage node, a PMOS erase transistor having source, drain and bulk region electrodes that are commonly-connected to receive an erase voltage and a gate electrode that is connected to the data storage node, and an NMOS read transistor having source, drain and bulk region electrodes and a gate electrode connected to the data storage node.
The features and advantages of the various aspects of the present invention will be more fully understood and appreciated upon consideration of the following detailed description of the invention and the accompanying drawings, which set forth illustrative embodiments in which the concepts of the invention are utilized.
With reference to
Referring to
Program Sequence
Set all electrodes to 0V. For all NVM cells 200 in the array rowselected for programming, set the source electrode voltage Vr and the drain electrode voltage Dr of the NMOS read transistor Nr to an inhibiting voltage VN. Set the source electrode voltage Vp and the drain electrode voltage Dp of the PMOS program transistor Pw to 0V. The bulk region electrode voltage Vnw of the PMOS program transistor Pw can be set to either the inhibiting voltage VN or 0V. The bulk region electrode voltage Vpw of the NMOS read transistor Nr is set to 0V if using the common P-Sub NMOS shown in
Erase Condition
Ramp up the erase voltage Ve from 0V to the maximum erase voltage Vemax, hold it for the duration of a predefine erase time Terase, and ramp the erase voltage back down from the maximum erase voltage Vemax to 0V. All other cell electrodes are set to 0V.
Read Condition
Set the source electrode voltage Vr of the NMOS read transistor Nr to about 1V (i.e., sufficient enough voltage to be able to read the cell current while preventing disturb to the programmed cells). All other electrodes of the cell are set to 0V.
Those skilled in the art will appreciate that the voltage levels utilized in the program, erase and read operations will depend upon the thickness of the gate oxide utilized in the NMOS and PMOS devices of the NVM cell 200. For example, for a gate oxide thickness of 60-80 Å, VN˜=3.3V, Vcmax=Vemax˜=10V, with Tprog=Terase˜=20-50 milliseconds. For gate oxide thickness of 120 Å, VN˜=5.0V, Vcmax=Vemax˜=16V, with Tprog=Terase˜=20-50 milliseconds.
It should be understood that the particular embodiments of the invention described above have been provided by way of example and that other modifications may occur to those skilled in the art without departing from the scope of the invention as expressed in the appended claims and their equivalents.
Number | Name | Date | Kind |
---|---|---|---|
5646885 | Matsuo et al. | Jul 1997 | A |
6137723 | Bergemont et al. | Oct 2000 | A |
6903978 | Mirgorodski et al. | Jun 2005 | B1 |
6985386 | Mirgorodski et al. | Jan 2006 | B1 |
6992927 | Poplevine et al. | Jan 2006 | B1 |
7042763 | Mirgorodski et al. | May 2006 | B1 |
7164606 | Poplevine et al. | Jan 2007 | B1 |
7167392 | Poplevine et al. | Jan 2007 | B1 |
7209392 | Chen et al. | Apr 2007 | B2 |
7239558 | Poplevine et al. | Jul 2007 | B1 |
7391647 | Fang et al. | Jun 2008 | B2 |
20020041000 | Watanabe et al. | Apr 2002 | A1 |
20090154248 | Noda | Jun 2009 | A1 |
Number | Date | Country | |
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20110242898 A1 | Oct 2011 | US |