A Method for Growing New Crystals for Laser Applications

Information

  • NSF Award
  • 9160858
Owner
  • Award Id
    9160858
  • Award Effective Date
    1/1/1992 - 32 years ago
  • Award Expiration Date
    9/30/1992 - 31 years ago
  • Award Amount
    $ 50,000.00
  • Award Instrument
    Standard Grant

A Method for Growing New Crystals for Laser Applications

Two new tunable laser materials discovered at Lawrence Livermore National Laboratory have shown intrinsic efficiency comparable to alexandrite; however, their full potential laser performance is limited by the quality of crystals available. The major impediment to the commercialization of the new laser materials is the high optical scatter loss, and cracking of crystals. The proposed program is to adapt the Heat Exchanger Method (HEMtm) for growth of the new materials. Low temperature gradients will be utilized to minimize defects and scattering losses due to variations in stoichiometry. The cracking problem is attributed to a negative thermal expansion coefficient along the C axis and stress in the crystal after growth. The shape of the solid- liquid interface during growth will be controlled such that solidification occurs off the interface in preference to off the crucible wall. In situ annealing will be carried out to minimize stress and temperature gradients on the crystal during cooldown.

  • Program Officer
    Ritchie B. Coryell
  • Min Amd Letter Date
    1/24/1992 - 32 years ago
  • Max Amd Letter Date
    1/24/1992 - 32 years ago
  • ARRA Amount

Institutions

  • Name
    Crystal Systems Inc
  • City
    Salem
  • State
    MA
  • Country
    United States
  • Address
    27 Congress Street
  • Postal Code
    019705575
  • Phone Number
    5087450088

Investigators

  • First Name
    Chandra
  • Last Name
    Khattak
  • Start Date
    1/1/1992 12:00:00 AM

FOA Information

  • Name
    Metals, Ceramics & Electronic Materials
  • Code
    15
  • Name
    Materials Research
  • Code
    106000