Patent Application
20180265363
The present invention relates to a method of making a multilayer structure using a coating composition comprising a solution borne MX/graphitic carbon precursor material. More particularly, the present invention relates to a method of making a multilayer electronic device structure on a substrate by applying to the substrate a coating composition comprising a liquid carrier, a polycyclic aromatic compound and a MX/graphic carbon precursor material to form a composite, wherein the composite is subsequently converted into an MX layer (e.g., a metal oxide layer) and a graphitic carbon layer disposed on a surface of the substrate, wherein the MX layer is interposed between the substrate and the graphitic carbon layer.
Since successfully being separated from graphite in 2004 using tape, graphene has been observed to exhibit certain very promising properties. For example, graphene was observed by researchers at IBM to facilitate the construction of transistors having a maximum cut-off frequency of 155 GHz, far surpassing the 40 GHz maximum cut-off frequency associated with conventional silicon based transistors.
Graphene materials may exhibit a broad range of properties. A single layer graphene structure has a higher heat and electric conductivity than copper. A bilayer graphene exhibits a band gap that enables it to behave like a semiconductor. Graphene oxide materials have been demonstrated to exhibit a tunable band gap depending on the degree of oxidation. That is, a fully oxidized graphene would be an insulator, while a partially oxidized graphene would behave like a semiconductor or a conductor depending on its ratio of carbon to oxygen (C/O).
The electric capacitance of a capacitor using graphene oxide sheets has been observed to be several times higher than a pure graphene counterpart. This result has been attributed to the increased electron density exhibited by the functionalized graphene oxide sheets. Given the ultra thin nature of a graphene sheet, parallel sheet capacitors using graphene as the layers could provide extremely high capacitance-to-volume ratio devices—i.e., super capacitors. To date, however, the storage capacities exhibited by conventional super capacitors has severely limited their adoption in commercial applications where power density and high life cycles are required. Nevertheless, capacitors have many significant advantages over batteries, including shelf life. Accordingly, a capacitor with an increased energy density and without diminishing either power density or cycle life, would have many advantages over batteries for a variety of applications. Hence, it would be desirable to have high energy density/high power density capacitors with a long cycle life.
Liu et al. disclose self assembled multi-layer nanocomposites of graphene and metal oxide materials. Specifically, in U.S. Pat. No. 8,835,046, Liu et al. disclose an electrode comprising a nanocomposite material having at least two layers, each layer including a metal oxide layer chemically bonded directly to at least one graphene layer wherein the graphene layer has a thickness of about 0.5 nm to 50 nm, the metal oxide layers and graphene layers alternatingly positioned in the at least two layers forming a series of ordered layers in the nanocomposite material.
Notwithstanding, there remains a continuing need for methods of making multilayer structures comprising alternating layers of MX material (e.g., metal oxide) and graphitic carbon material for use in a variety of applications including as electrode structures in lithium ion batteries and in multilayer super capacitors.
The present invention provides a method of making a multilayer structure, comprising: providing a substrate; providing a coating composition, comprising: a liquid carrier; 0.1 to 25 wt % of a polycyclic aromatic additive, wherein the polycyclic aromatic additive is selected from the group consisting of C10-60 polycyclic aromatic compounds having at least one functional moiety attached thereto, wherein the at least one functional moiety is selected from the group consisting of a hydroxyl group (—OH), a carboxylate group (—C(O)OH), a —OR3 group and a —C(O)R3 group; wherein R3 is a —C1-20 linear or branched, substituted or unsubstituted alkyl group; and 2 to 25 wt % of an MX/graphitic carbon precursor material having a formula (I)
wherein M is selected from the group consisting of Ti, Hf and Zr; wherein each X is independently selected from the group consisting of N, S, Se and O; wherein R1 is selected from the group consisting of a —C2-6 alkylene-X— group and a —C2-6 alkylidene-X— group; wherein z is 0 to 5; wherein n is 1 to 15; wherein each R2 group is independently selected from the group consisting of a hydrogen, a —C1-20 alkyl group, a ß-diketone residue, a ß-hydroxyketone residue, a —C(O)—C2-30 alkyl group, a —C(O)—C6-10 alkylaryl group, a —C(O)—C6-10 arylalkyl group, a —C(O)—C6 aryl group and a —C(O)—C10-60 polycyclic aromatic group; disposing the coating composition on the substrate to form a composite; optionally, baking the composite; annealing the composite under a forming gas atmosphere; whereby the composite is converted into an MX layer and a graphitic carbon layer disposed on the substrate providing the multilayer structure; wherein the MX layer is interposed between the substrate and the graphitic carbon layer in the multilayer structure.
The present invention also provides an electronic device comprising a multilayered structure made according to the method of the present invention.
Energy storage devices with significantly improved performance will be a game changer in the utilization and implementation of renewable energy sources such as wind and solar and the associated beneficial reduction in greenhouse gas emissions. The method of making a multilayer structure of the present invention provides multilayer structures comprising alternating layers of MX and graphitic carbon. These multilayer structures may provide certain key components for energy storage devices with improved performance properties, wherein the multilayer structures provide high efficiency/high capacity energy storage in multilayered super capacitors and low resistance high capacity electrode structures in both super capacitors and next generation battery designs.
The method of making a multilayer structure of the present invention, comprises: providing a substrate; providing a coating composition, comprising: a liquid carrier; 0.1 to 25 wt % (preferably, 0.1 to 20 wt %; more preferably, 0.25 to 7.5 wt %; most preferably, 0.4 to 5 wt %) of a polycyclic aromatic additive, wherein the polycyclic aromatic additive is selected from the group consisting of C10-60 polycyclic aromatic compounds having at least one functional moiety attached thereto, wherein the at least one functional moiety is selected from the group consisting of a hydroxyl group (—OH), a carboxylate group (—C(O)OH), a —OR3 group and a —C(O)R3 group; wherein R3 is a —C1-20 linear or branched, substituted or unsubstituted alkyl group (preferably, wherein R3 is a —C1-10 alkyl group; more preferably, wherein R3 is a —C1-5 alkyl group; most preferably, wherein R3 is a —C1-4 alkyl group); and 2 to 25 wt % (preferably, 4 to 20 wt %; more preferably, 4 to 16 wt %) of a MX/graphitic carbon precursor material having a formula (I)
wherein M is selected from the group consisting of Ti, Hf and Zr (preferably, wherein M is selected from the group consisting of Hf, Zr; more preferably, wherein M is Zr); wherein each X is an atom independently selected from N, S, Se and O (preferably, wherein each X is independently selected from N, S and O; more preferably, wherein each X is independently selected from S and O; most preferably, wherein each X is an O); wherein n is 1 to 15 (preferably, 2 to 12; more preferably, 2 to 8; most preferably, 2 to 4); wherein R1 is selected from the group consisting of a —C2-6 alkylene-X— group and a —C2-6 alkylidene-X— group (preferably, wherein R1 is selected from the group consisting of a —C2-4 alkylene-X— group and a —C2-4 alkylidene-X— group; more preferably, wherein R1 is selected from the group consisting of a —C2-4 alkylene-O— group and a —C2-4 alkylidene-O— group); wherein z is 0 to 5 (preferably, 0 to 4; more preferably, 0 to 2; most preferably, 0); wherein each R2 group is independently selected from the group consisting of a hydrogen, a —C1-20 alkyl group, a ß-diketone residue, a ß-hydroxyketone residue, a —C(O)—C2-30 alkyl group, a —C(O)—C6-10 alkylaryl group, a —C(O)—C6-10 arylalkyl group, a —C(O)—C6 aryl group and a —C(O)—C10-60 polycyclic aromatic group; (preferably, wherein at least 10 mol % (more preferably, 10 to 95 mol %; still more preferably, 25 to 80 mol %; most preferably, 30 to 75 mol %) of the R2 groups in the MX/graphitic carbon precursor material are —C(O)—C10-60 polycyclic aromatic groups); disposing the coating composition on the substrate to form a composite; optionally, baking the composite; annealing the composite under a forming gas atmosphere; whereby the composite is converted into an MX layer and a graphitic carbon layer disposed on the substrate providing the multilayer structure; wherein the MX layer is interposed between the substrate and the graphitic carbon layer in the multilayer structure.
One of ordinary skill in the art will know to select appropriate substrates for use in the method of the present invention. Substrates used in the method of the present invention include any substrate having a surface that can be coated with a coating composition of the present invention. Preferred substrates include silicon containing substrates (e.g., silicon; polysilicon; glass; silicon dioxide; silicon nitride; silicon oxynitride; silicon containing semiconductor substrates, such as, silicon wafers, silicon wafer fragments, silicon on insulator substrates, silicon on sapphire substrates, epitaxial layers of silicon on a base semiconductor foundation, silicon-germanium substrates); certain plastics able to withstand the baking and annealing conditions; metals (e.g., copper, ruthenium, gold, platinum, aluminum, titanium and alloys thereof); titanium nitride; and non-silicon containing semiconductive substrates (e.g., non-silicon containing wafer fragments, non-silicon containing wafers, germanium, gallium arsenide and indium phosphide). Preferably, the substrate is a silicon containing substrate or a conductive substrate. Preferably, the substrate is in the form of a wafer or optical substrate such as those used in the manufacture of integrated circuits, capacitors, batteries, optical sensors, flat panel displays, integrated optical circuits, light-emitting diodes, touch screens and solar cells.
One of ordinary skill in the art will know to select an appropriate liquid carrier for the coating composition used in the method of the present invention. Preferably, liquid carrier in the coating composition used in the method of the present invention, is an organic solvent selected from the group consisting of aliphatic hydrocarbons (e.g., dodecane, tetradecane); aromatic hydrocarbons (e.g., benzene, toluene, xylene, trimethyl benzene, butyl benzoate, dodecylbenzene, mesitylene); polycyclic aromatic hydrocarbons (e.g., naphthalene, alkylnaphthalenes); ketones (e.g., methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone); esters (e.g., 2-hydroxyisobutyric acid methyl ester, γ-butyrolactone, ethyl lactate); ethers (e.g., tetrahydrofuran, 1,4-dioxaneandtetrahydrofuran, 1,3-dioxalane); glycol ethers (e.g., diprolylene glycol dimethyl ether); alcohols (e.g., 2-methyl-1-butanol, 4-ethyl-2-pentol, 2-methoxy-ethanol, 2-butoxyethanol, methanol, ethanol, isopropanol, α-terpineol, benzyl alcohol, 2-hexyldecanol); glycols (e.g., ethylene glycol) and mixtures thereof. Preferred liquid carriers include toluene, xylene, mesitylene, alkylnaphthalenes, 2-methyl-1-butanol, 4-ethyl-2-pentol, γ-butyrolactone, ethyl lactate, 2-hydroxyisobutyric acid methyl ester, propylene glycol methyl ether acetate and propylene glycol methyl ether.
Preferably, the liquid carrier in the coating composition used in the method of the present invention, contains <10,000 ppm of water. More preferably, the liquid carrier in the coating composition used in the method of the present invention, contains <5000 ppm water. Most preferably, the liquid carrier in the coating composition used in the method of the present invention, contains <5500 ppm water.
The term “hydrogen” as used herein and in the appended claims includes isotopes of hydrogen such as deuterium and tritium.
Preferably, the coating composition used in the method of the present invention contains a polycyclic aromatic additive, wherein the polycyclic aromatic additive is selected from the group consisting of C10-60 polycyclic aromatic compounds having at least one functional moiety attached thereto, wherein the at least one functional moiety is selected from the group consisting of a hydroxyl group (—OH), a carboxylate group (—C(O)OH), a —OR3 group and a —C(O)R3 group; wherein R3 is a —C1-20 linear or branched, substituted or unsubstituted alkyl group (preferably, wherein R3 is a —C1-10 alkyl group; more preferably, wherein R3 is a —C1-5 alkyl group; most preferably, wherein R3 is a —C1-4 alkyl group). More preferably, the coating composition used in the method of the present invention contains a polycyclic aromatic additive, wherein the polycyclic aromatic additive is selected from the group consisting of C14-40 polycyclic aromatic compounds having at least one functional moiety attached thereto, wherein the at least one functional moiety is selected from the group consisting of a hydroxyl group (—OH) and a carboxylate group (—C(O)OH). More preferably, the coating composition used in the method of the present invention contains a polycyclic aromatic additive, wherein the polycyclic aromatic additive is selected from the group consisting of C16-32 polycyclic aromatic compounds having at least one functional moiety attached thereto, wherein the at least one functional moiety is selected from the group consisting of a hydroxyl group (—OH) and a carboxylate group (—C(O)OH). Preferably, the polycyclic aromatic additive is incorporated into the coating composition by adding the polycyclic aromatic additive to the liquid carrier before or after the MX/graphitic carbon precursor material is added to the liquid carrier or formed in the liquid carrier, in situ.
Preferably, the coating composition used in the method of the present invention contains 0.1 to 25 wt % of the polycyclic aromatic additive. More preferably, the coating composition used in the method of the present invention contains 0.1 to 20 wt % of the polycyclic aromatic additive. Still more preferably, the coating composition used in the method of the present invention contains 0.25 to 7.5 wt % of the polycyclic aromatic additive. Most preferably, the coating composition used in the method of the present invention contains 0.4 to 5 wt % of the polycyclic aromatic additive.
Preferably, the coating composition used in the method of the present invention contains a MX/graphitic carbon precursor material having a chemical structure according to formula (I)
wherein M is selected from the group consisting of Ti, Hf and Zr; wherein each X is an atom independently selected from N, S, Se and O (preferably, wherein each X is independently selected from N, S and O; more preferably, wherein each X is independently selected from S and O; most preferably, wherein each X is O); wherein n is 1 to 15 (preferably, 2 to 12; more preferably, 2 to 8; most preferably, 2 to 4); wherein R1 is selected from the group consisting of a —C2-6 alkylene-O— group and a —C2-6 alkylidene-O— group (preferably, wherein R1 is selected from the group consisting of a —C2-4 alkylene-O— group and a —C2-4 alkylidene-O— group); wherein z is 0 to 5 (preferably, 0 to 4; more preferably, 0 to 2; most preferably, 0); wherein each R2 group is independently selected from the group consisting of a hydrogen, a —C1-20 alkyl group, a ß-diketone residue, a ß-hydroxyketone residue, a —C(O)—C2-30 alkyl group, a —C(O)—C6-10 alkylaryl group, a —C(O)—C6-10 arylalkyl group, a —C(O)—C6 aryl group and a —C(O)—C10-60 polycyclic aromatic group. Preferably, the MX/graphitic carbon precursor material used in the method of the present invention, has a chemical structure according to formula (I); wherein at least 10 mol % of the R2 groups in the MX/graphitic carbon precursor material are —C(O)—C10-60 polycyclic aromatic groups. More preferably, the MX/graphitic carbon precursor material used in the method of the present invention, has a chemical structure according to formula (I), wherein 10 to 95 mol % (more preferably, 25 to 80 mol %; most preferably, 30 to 75 mol %) of the R2 groups in the MX/graphitic carbon precursor material are —C(O)—C14-60 polycyclic aromatic groups. Most preferably, the MX/graphitic carbon precursor material used in the method of the present invention, has a chemical structure according to formula (I); wherein at least 10 mol % (preferably, 10 to 50 mol %; more preferably, 10 to 25 mol %) of the R2 groups are —C(O)—C16-60 polycyclic aromatic groups (more preferably, —C(O)—C16-32 polycyclic aromatic groups; most preferably, 1-(8,10-dyhydropyren-4-yl)ethan-1-one groups).
Preferably, the coating composition used in the method of the present invention contains a MX/graphitic carbon precursor material, wherein the MX/graphitic carbon precursor material is a metal oxide/graphitic carbon precursor material according to formula (I), wherein M is selected from the group consisting of Hf and Zr; wherein each X is O; wherein n is 1 to 15 (preferably, 2 to 12; more preferably, 2 to 8; most preferably, 2 to 4); wherein R1 is selected from the group consisting of a —C2-6 alkylene-O— group and a —C2-6 alkylidene-O— group (preferably, wherein R1 is selected from the group consisting of a —C2-4 alkylene-O— group and a —C2-4 alkylidene-O— group); wherein z is 0 to 5 (preferably, 0 to 4; more preferably, 0 to 2; most preferably, 0); wherein each R2 group is independently selected from the group consisting of a hydrogen, a —C1-20 alkyl group, a ß-diketone residue, a ß-hydroxyketone residue, a —C(O)—C2-30 alkyl group, a —C(O)—C6-10 alkylaryl group, a —C(O)—C6-10 arylalkyl group, a —C(O)—C6 aryl group and a —C(O)—C10-60 polycyclic aromatic group; wherein at least 10 mol % of the R2 groups in the Metal oxide/graphitic carbon precursor material are —C(O)—C10-60 polycyclic aromatic groups. More preferably, the metal oxide/graphitic carbon precursor material used in the method of the present invention, has a chemical structure according to formula (I), wherein at least 10 mol % (preferably, 10 to 95 mol %; more preferably, 25 to 80 mol %; most preferably, 30 to 75 mol %) of the R2 groups, are —C(O)—C14-60 polycyclic aromatic groups. Most preferably, the metal oxide/graphitic carbon precursor material used in the method of the present invention, has a chemical structure according to formula (I); wherein at least 10 mol % (preferably, 10 to 50 mol %; more preferably, 10 to 25 mol %) of the R2 groups are —C(O)—C16-60 polycyclic aromatic groups (more preferably, —C(O)—C16-32 polycyclic aromatic groups; more preferably, 1-(8,10-dyhydropyren-4-yl)ethan-1-one groups).
Preferably, the coating composition used in the method of the present invention contains a MX/graphitic carbon precursor material, wherein the MX/graphitic carbon precursor material is a metal oxide/graphitic carbon precursor material according to formula (I), wherein M is selected from the group consisting of Hf and Zr; wherein each X is O; wherein n is 1 to 15 (preferably, 2 to 12; more preferably, 2 to 8; most preferably, 2 to 4); wherein z is 0; wherein each R2 group is independently selected from the group consisting of a hydrogen, a —C1-20 alkyl group, a ß-diketone residue, a ß-hydroxyketone residue, a —C(O)—C2-30 alkyl group, a —C(O)—C6-10 alkylaryl group, a —C(O)—C6-10 arylalkyl group, a —C(O)—C6 aryl group and a —C(O)—C10-60 polycyclic aromatic group; wherein at least 10 mol % of the R2 groups in the MX/graphitic carbon precursor material are —C(O)—C10-60 polycyclic aromatic groups. More preferably, the metal oxide/graphitic carbon precursor material used in the method of the present invention, has a chemical structure according to formula (I), wherein at least 10 mol % (preferably, 10 to 95 mol %; more preferably, 25 to 80 mol %; most preferably, 30 to 75 mol %) of the R2 groups, are —C(O)—C14-60 polycyclic aromatic groups. Most preferably, the metal oxide/graphitic carbon precursor material used in the method of the present invention, has a chemical structure according to formula (I); wherein at least 10 mol % (preferably, 10 to 50 mol %; more preferably, 10 to 25 mol %) of the R2 groups are —C(O)—C16-60 polycyclic aromatic groups (more preferably, —C(O)—C16-32 polycyclic aromatic groups; more preferably, 1-(8,10-dyhydropyren-4-yl)ethan-1-one groups).
Preferably, the coating composition used in the method of the present invention contains a MX/graphitic carbon precursor material, wherein the MX/graphitic carbon precursor material is a metal oxide/graphitic carbon precursor material according to the chemical structure of formula (I), wherein M is Zr; wherein each X is O; wherein n is 1 to 15 (preferably, 2 to 12; more preferably, 2 to 8; most preferably, 2 to 4); wherein z is 0; wherein each R2 group is independently selected from the group consisting of a hydrogen, a —C1-20 alkyl group, a —C(O)—C2-30 alkyl group, a —C(O)—C6-10 alkylaryl group, a —C(O)—C6-10 arylalkyl group, a —C(O)—C6 aryl group and a —C(O)—C10-60 polycyclic aromatic group; wherein at least 10 mol % of the R2 groups in the metal oxide/graphitic carbon precursor material are —C(O)—C10-60 polycyclic aromatic groups. More preferably, the metal oxide/graphitic carbon precursor material used in the method of the present invention, has a chemical structure according to formula (I), wherein at least 10 mol % (preferably, 10 to 95 mol %; more preferably, 25 to 80 mol %; most preferably, 30 to 75 mol %) of the R2 groups, are —C(O)—C14-60 polycyclic aromatic groups. Most preferably, the metal oxide/graphitic carbon precursor material used in the method of the present invention, has a chemical structure according to formula (I); wherein at least 10 mol % (preferably, 10 to 50 mol %; more preferably, 10 to 25 mol %) of the R2 groups are —C(O)—C16-60 polycyclic aromatic groups (more preferably, —C(O)—C16-32 polycyclic aromatic groups; more preferably, 1-(8,10-dyhydropyren-4-yl)ethan-1-one groups).
Preferably, the coating composition used in the method of the present invention contains a MX/graphitic carbon precursor material, wherein the MX/graphitic carbon precursor material is a metal oxide/graphitic carbon precursor material according to the chemical structure of formula (I), wherein M is Zr; wherein each X is O; wherein n is 1 to 15 (preferably, 2 to 12; more preferably, 2 to 8; most preferably, 2 to 4); wherein z is 0; wherein each R2 group is independently selected from the group consisting of a hydrogen, a —C1-20 alkyl group, a ß-diketone residue, a ß-hydroxyketone residue, a —C(O)—C2-30 alkyl group, a —C(O)—C6-10 alkylaryl group, a —C(O)—C6-10 arylalkyl group, a —C(O)—C6 aryl group and a —C(O)—C10-60 polycyclic aromatic group; wherein at least 10 mol % of the R2 groups in the metal oxide/graphitic carbon precursor material are —C(O)—C10-60 polycyclic aromatic groups; wherein 30 mol % of the R2 groups in the MX/graphitic carbon precursor material are butyl groups; 55 mol % of the R2 groups in the MX/graphitic carbon precursor material are —C(O)—C7 alkyl groups; and 15 mol % of the R2 groups in the MX/graphitic carbon precursor material are —C(O)—C17 polycyclic aromatic groups.
Preferably, the coating composition used in the method of the present invention contains a MX/graphitic carbon precursor material, wherein the MX/graphitic carbon precursor material has a chemical structure according to formula (I), wherein at least 10 mol % of the R2 groups in the MX/graphitic carbon precursor material are —C(O)—C10-60 polycyclic aromatic groups. Preferably, the polycyclic aromatic groups contain at least two component rings that are joined in such a manner that each component ring shares at least two carbon atoms (i.e., wherein the at least two component rings that share at least two carbon atoms are said to be fused).
Preferably, the coating composition used in the method of the present invention contains 2 to 25 wt % of the MX/graphitic carbon precursor material. More preferably, the coating composition used in the method of the present invention contains 4 to 20 wt % of the MX/graphitic carbon precursor material. Most preferably, the coating composition used in the method of the present invention contains 4 to 16 wt % of the MX/graphitic carbon precursor material.
Preferably, the coating composition used in the method of the present invention, further comprises: an optional additional component. Optional additional components include, for example, curing catalysts, antioxidants, dyes, contrast agents, binder polymers, rheology modifies and surface leveling agents.
Preferably, the method of making a multilayer structure of the present invention, further comprises: filtering the coating composition. More preferably, the method of making a multilayer structure of the present invention, further comprises: filtering the coating composition (for example passing the coating composition through a Teflon membrane) before disposing the coating composition on the substrate to form the composite. Most preferably, the method of making a multilayer structure of the present invention, further comprises: microfiltering (more preferably, nanofiltering) the coating composition to remove contaminants before disposing the coating composition on the substrate to form the composite.
Preferably, the method of making a multilayer structure of the present invention, further comprises: purifying the coating composition by exposing the coating composition to an ion exchange resin. More preferably, the method of making a multilayer structure of the present invention, further comprises: purifying the coating composition by exposing the coating composition to an ion exchange resin to extract charged impurities (for example undesirably cations and anions) before disposing the coating composition on the substrate to form the composite.
Preferably, in the method of making a multilayer structure of the present invention, the coating composition is disposed on the substrate to form a composite using a liquid deposition process. Liquid deposition processes include, for example, spin-coating, slot-die coating, doctor blading, curtain coating, roller coating, dip coating, and the like. Spin-coating and slot-die coating processes are preferred.
Preferably, the method of making a multilayer structure of the present invention, further comprises: baking the composite. Preferably, the composite can be baked during or after disposing the coating composition on the substrate. More preferably, the composite is baked after disposing the coating composition on the substrate to form the composite. Preferably, the method of making a multilayer structure of the present invention, further comprises: baking the composite in an air under atmospheric pressure. Preferably, the composite is baked at a baking temperature of ≤125° C. More preferably, the composite is baked at a baking temperature of 60 to 125° C. Most preferably, the composite is baked at a baking temperature of 90 to 115° C. Preferably, the composite is baked for a period of 10 seconds to 10 minutes. More preferably, the composite is baked for a baking period of 30 seconds to 5 minutes. Most preferably, the composite is baked for a baking period of 6 to 180 seconds. Preferably, when the substrate is a semiconductor wafer, the baking can be performed by heating the semiconductor wafer on a hot plate or in an oven.
Preferably, in the method of making a multilayer structure of the present invention, the composite is annealed at an annealing temperature of ≥150° C. More preferably, the composite is annealed at an annealing temperature of 450° C. to 1,500° C. Most preferably, the composite is annealed at an annealing temperature of 700 to 1,000° C. Preferably, the composite is annealed at the annealing temperature for an annealing period of 10 seconds to 2 hours. More preferably, the composite is annealed at the annealing temperature for an annealing period of 1 to 60 minutes. Most preferably, the composite is annealed at the annealing temperature for an annealing period of 10 to 45 minutes.
Preferably, in the method of making a multilayer structure of the present invention, the composite is annealed under a forming gas atmosphere. Preferably, the forming gas atmosphere comprises hydrogen in an inert gas. Preferably, the forming gas atmosphere is hydrogen in at least one of nitrogen, argon and helium. More preferably, the forming gas atmosphere is 2 to 5.5 vol % hydrogen in at least one of nitrogen, argon and helium. Most preferably, the forming gas atmosphere is 5 vol % hydrogen in nitrogen.
Preferably, in the method of making a multilayer structure of the present invention, the multilayer structure provided is an MX layer and a graphitic carbon layer disposed on the substrate, wherein the MX layer is interposed between the substrate and the graphitic carbon layer in the multilayer structure. More preferably, the multilayer structure provided is a metal oxide layer and a graphitic carbon layer disposed on the substrate, wherein the metal oxide layer is interposed between the substrate and the graphitic carbon layer in the multilayer structure. Preferably, the graphitic carbon layer is a graphene oxide layer. Preferably, the graphitic carbon layer is a graphene oxide layer having a carbon to oxygen (C/O) molar ratio of 1 to 10.
Preferably, the method of making a multilayer structure of the present invention, further comprises disposing the coating composition on top of the previously provided multilayer structure, wherein a plurality of alternating MX layers (preferably, metal oxide layers) and graphitic carbon layers are disposed on the substrate. This results in a cured structure having an alternating structure of cured MX layers (preferably, metal oxide layers) and graphitic carbon layers. This process may be repeated any number of times to build a stack of such alternating layers.
Preferably, the method of making a multilayer structure of the present invention, further comprises exposing the multilayer structure to an acid to provide a freestanding graphitic carbon layer; and, recovering the graphitic carbon layer. Preferably, the multilayer structure is immersed in an acid (preferably, hydrofluoric acid). Preferably, the multilayer structure is immersed in a hydrofluoric acid bath, whereby the MX layer is etched away and the graphitic carbon layer is recovered as a free standing sheet.
The multilayer structures produced by the method of the present invention are useful in a variety of applications, including as components in electronic devices, in electric storage systems (e.g., as energy storage components of supercapacitors; as electrodes in lithium ion batteries) and as barrier layers for impeding water and/or oxygen permeation. A wide variety of electronic device substrates may be used in the present invention, such as: packaging substrates such as multichip modules; flat panel display substrates, including flexible display substrates; integrated circuit substrates; photovoltaic device substrates; substrates for light emitting diodes (LEDs, including organic light emitting diodes or OLEDs); semiconductor wafers; polycrystalline silicon substrates; and the like. Such substrates are typically composed of one or more of silicon, polysilicon, silicon oxide, silicon nitride, silicon oxynitride, silicon germanium, gallium arsenide, aluminum, sapphire, tungsten, titanium, titanium-tungsten, nickel, copper, and gold. Suitable substrates may be in the form of wafers such as those used in the manufacture of integrated circuits, optical sensors, flat panel displays, integrated optical circuits, and LEDs. As used herein, the term “semiconductor wafer” is intended to encompass “an electronic device substrate,” “a semiconductor substrate,” “a semiconductor device,” and various packages for various levels of interconnection, including a single-chip wafer, multiple-chip wafer, packages for various levels, or other assemblies requiring solder connections.
Some embodiments of the present invention will now be described in detail in the following Examples.
A metal oxide/graphitic carbon precursor material was prepared as follows. Tetrabutoxyhafnium (100 g, available from Gelest, Inc.) was added to a flask. With vigorous stirring, pentane-2,4-dione (42.5 g) was added to the flask slowly over a period of 6 hours. The flask contents were left stirring in the flask overnight at room temperature. The N-butanol produced during the reaction was removed under vacuum. Then 800 mL of ethyl acetate was added to the flask at room temperature with stirring over a period of 30 minutes. The contents of the flask were then filtered through a fine frit to remove any insoluble materials. The remaining solvent was removed from the filtrate under vacuum to provide a pale white solid (100.4 g). The pale white solid (100.4 g), ethyl acetate (500 mL) and diethylene glycol (19.4 g) were then added to a flask equipped with a reflux condenser, a stirring bar and a thermal meter. The flask contents were then refluxed at 80° C. for 24 hours. The flask contents were then filtered through a fine frit and dried under vacuum to provide a brown-white solid. The brown-white solid was then washed with heptane (3×1 L) and then dried under strong vacuum for 2 hours, yielding a metal oxide/graphitic carbon precursor material product solid with the following chemical structure.
A portion of the metal oxide/graphitic carbon precursor material product solid (0.7448 g) from Example 1 was dissolved in ethyl lactate to form a coating composition having a total weight of 15.8729 g yielding a coating composition with 4.7 wt % of the metal oxide/graphitic carbon precursor material.
A portion of the metal oxide/graphitic carbon precursor material product solid (0.8077 g) from Example 1 was dissolved in ethyl lactate to form a composition having a total weight of 16.2832 g. 2-naphthoic acid (0.1024 g) was then added to the composition to provide a coating composition with 5.0 wt % of the metal oxide/graphitic carbon precursor material and 0.63 wt % of the 2-naphthoic acid.
A portion of the metal oxide/graphitic carbon precursor material product solid (0.7263 g) from Example 1 was dissolved in ethyl lactate to form a composition having a total weight of 10.4024 g. 2-naphthol (0.0472 g) was then added to the composition to provide a coating composition with 7.0 wt % of the metal oxide/graphitic carbon precursor material and 0.45 wt % of the 2-naphthol.
The coating compositions prepared according to each of Comparative Example C1 and Examples 2 and 3 were filtered through a 0.2 μm PTFE syringe filter four times before spin coating on separate 8″ bare silicon wafer at 1,500 rpm and then backing at 100° C. for 60 seconds. The coated wafers were then cleaved into 1.5″×1.5″ coupons. The coupons were then placed in an annealing vacuum oven. The wafer coupons were then annealed under a reduced pressure of a forming gas (5 vol % H2 in N2) for 20 minutes at 900° C. using the following temperature ramping profile:
Ramp up: from room temperature to 900° C. over 176 minutes
Soak: maintain at 900° C. for 20 minutes
Ramp down: from 900° C. to room temperature over slightly longer than 176 minutes. The coated surface of each of the wafer coupons post annealing had a shinning metallic appearance. The deposited materials were observed to comprise a multilayer structure with an in situ formed metal oxide film on the surface of the wafer coupons interposed between the surface of the wafer coupon and an overlying graphitic carbon layer. The graphitic carbon layers were then analyzed using a Witec confocal Raman microscope. The Raman spectra for the annealed samples derived from the coating compositions of Comparative Example C1 and Examples 2 and 3 are provided in
This application claims priority to National Stage application of PCT/CN2015/091040, filed Sep. 29, 2015, which is incorporated by reference in its entirety herein.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/CN2015/091040 | 9/29/2015 | WO | 00 |
