The present invention relates to a receiver circuit and an amplifying and switching circuit for a radar receiver.
Automotive radar systems may be installed in vehicles to assist drivers. These systems may provide the driver with information about distance between the driver's vehicle and other vehicles or obstacles present on the road. In some implementations, radar systems can be used to control aspects of operation of the vehicle, for example to control the braking system to avoid a crash.
In automotive radar systems, the transmitter sends out a signal through a transmit antenna. The propagated signal reaches the target and partially reflects back to the radar system. The reflected signal is picked up by a receive antenna of a receiver circuit (Rx). In order to assist with high resolution detection, the receiver can have a plurality of antennas, each with its own receive channel as shown in
It would be advantageous to provide an alternative receiver circuit.
In a first aspect, the invention provides a receiver circuit comprising:
a first antenna;
a second antenna;
an input amplification stage comprising a first input amplifier circuit for amplifying a first signal received at the first antenna, and second input amplifier circuit for amplifying a second signal received at the second antenna;
a switching stage comprising first and second transconductance components connected respectively to the first and second input amplifier circuits and to a common output, and a switching mechanism arranged to selectively turn on and off the first and second transconductance components so that only one of the first and second transconductance components is in an on state at any time, the first and second transconductance components further amplifying the first and second signals respectively when in an on state; and
an output amplification stage connected to the common output of the switching stage and comprising an output amplifier circuit for further amplifying the first and second signals when they are outputted via the common output.
In an embodiment, the first and second transconductance components comprise first and second transistors arranged in a common source topology.
In an embodiment, the common output is formed by connecting the drains of the first and second transistors.
In an embodiment, the receiver circuit comprises a third antenna and wherein the input amplification stage a third input amplifier circuit for amplifying a third signal received at the third antenna, and wherein the switching stage comprises a third transconductance component connected to the third input amplifier circuit and the common output for further amplifying the third signal, and wherein the switching mechanism is further arranged to turn the third transconductance component on and off.
In an embodiment, the third transconductance component comprise a third transistor arranged in a common source topology.
In an embodiment, the switching mechanism comprises fourth and fifth transistors connected respectively to the first and second transistors and which when switched on respectively turn on the first and second transistors.
In an embodiment, the switching mechanism comprises fourth, fifth and sixth transistors connected respectively to the first, second and third transistors and which when switched on respectively turn on the first, second and third transistors.
In an embodiment, the first and second input amplifier circuits each comprise a plurality of common source amplifiers.
In an embodiment, the first and second input amplifiers each comprise at least one input matching component.
In an embodiment, the first and second input amplifier circuits each comprise three common source amplifiers.
In an embodiment, the output amplifier circuit comprises a plurality of common source amplifiers.
In an embodiment, the receiver circuit comprises two common source amplifiers.
In a second aspect, the invention provides an amplifying and switching circuit for a radar receiver, the circuit comprising:
an input amplification stage comprising a first input for connection to a first antenna, a second input for connection to a second antenna, a first input amplifier circuit for amplifying a first signal received at the first input, and second input amplifier circuit for amplifying a second signal received at the second input;
a switching stage comprising first and second transconductance components connected respectively to the first and second input amplifier circuits and to a common output, and a switching mechanism arranged to selectively turn on and off the first and second transistors so that only one of the first and second transconductance components is in an on state at any time, the first and second transconductance components further amplifying the first and second signals respectively when in an on state; and
an output amplification stage connected to the common output of the switching stage and comprising an output amplifier circuit for further amplifying the first and second signals when they are outputted via the common output.
Embodiments of the invention will now be described in relation to the following drawings, in which:
a and 3b are schematic diagrams illustrating the operation of the receiver of
a and 7b illustrate common source and Cascode amplifiers respectively;
Referring to
The receiver circuit 100 is intended to be implemented on a CMOS chip with a 65 nm process accordingly it will be appreciated that other components (such as a mixer) will be implemented on the same chip and form part of the radar receiver circuit.
A simplified diagram of a receiver circuit 100 for two antennas is shown in
The operation of the proposed receiver circuit 100 is shown in
A schematic diagram of the switching stage 120 (TranSw) is shown in
The operation of the TranSw 120 is described in relation to
io=vin1gm1 (1)
In another words, the signal from channel 1 is let through while signal from channel 2 is blocked. When the receive signal from channel 2 (vin2) is wanted, in
io=vin2gm2 (2)
That is, the signal from channel 2 is let though while signal from channel 1 is blocked.
In one embodiment, the receiver circuit 100 is designed for operation at 77 GHz. The receiver circuit 100 should provide input matching with both receive antennas at all times (irrespective of whether the channel is selected or blocked). The two inputs to the TranSw 120 could be connected to the receive antennas over a matching network. However the input impedances of the TranSw 120 vary significantly as transistors M1-M4 are switched on/off.
Thus matching networks that match the receive antennas with the varied impedances are not practical. In order overcome this issue, the input amplifiers are placed between the TranSw and the receive antennas to provide sufficient isolation between the inputs of the TranSw and the antennas. As a result, the matching networks are not affected by the varied input impedances of the TranSw. The output amplifier (OutAmp) drives the output current of the TranSw and adds more gain.
Amplifiers in low noise amplifiers suitable for a CMOS substrate are usually based on 3 common transconductance components: common gate (CG), common source (CS), and cascode amplifier. To achieve high gain, CS (
Although the cascode structure has the advantages of bandwidth improvement, input-output isolation, and high output impedance, it has more transistors, i.e. more noise sources than a CS transconductance component. Further, at 77 GHz, the gain provided by the CS transistor of the cascode structure is not high, as a result the noise contributed by the cascode transistor is significant. Accordingly, a CS topology is chosen as the transconductance component for the receiver circuit 100 of the embodiment.
A simplified schematic of the proposed receiver circuit with switching for two antennas is shown in
The input amplifiers 111,112 (InAmp1, InAmp2) each have three cascaded common source amplifiers with input matching. In the first stage of InAmp1 111 and InAmp2 112, the transistor (M5/M8) bias is set to optimal NFmin current density, which is 0.2 mA/μm. The optimal finger width to maximize fmax is chosen and equal to 1 μm. The number of fingers is selected to match the optimal noise impedance, which is 20 fingers. Thus, the transistor's total width is 20 μm with minimum channel length of 65 nm. Degeneration and gate matching inductors LS and LG respectively are added to bring the input impedance of the CS transistor M1 to match a 50 Ohm antenna. The input impedance can be expressed by
where RG and RS are gate and source resistance respectively, ωT is the maximum unity current gain frequency, and gm is the transconductance of M5/M8.
As expressed in (3), the values of LS and LG are chosen to cancel out the imaginary part of Zin while making the real part of Zin close to 50 Ohm. In this design LS and LG are 70 pH and 80 pH and implemented by micro strip transmission lines, Ts1 and Tin respectively. At 77 GHz the capacitive parasitics due to the input pad of the receiver circuit cannot be neglected, thus a shunt 60 pH Lp is added to cancel out this parasitic capacitance by a further micro strip transmission line Tp. Furthermore, Tp acts as electrostatic discharge (ESD) path to protect the gate of M5/M8. The output drain of the first stage is placed very close to the gate of the second stage in a circuit layout of an embodiment. As a result, the 80 pH output load, creates an LC resonance circuit, which maximizes the gain and avoids complex inter-stage matching network. This design is adopted in every stage of the InAmp1/InAmp2.
The second stage transistor M6/M9 (
As shown in
Consisting of three cascade amplifier, InAmp1/InAmp2 111,112 provides sufficient isolation between receive antennas and the TranSw 120 thus the input matching are simplified and relaxed. Increasing the number of cascaded amplifiers would improve the isolation but would also decrease efficiency since the architecture would have greater power consumption and silicon area are traded due to the additional amplifiers. Reducing the number of cascaded amplifier makes the isolation lower thus making the input matching design more challenging.
As described above in relation to
The output amplifier 130 (OutAmp) drives the output of the TranSw consists of an inductive load (80 pH) made of micro strip transmission lines, and 2 cascaded identical common source amplifiers. The two transistors M11 and M12 have length and width of 65 nm and 20 μm. All the loads of the two amplifiers are 80 pH made of micro strip transmission lines. The output drain of the first stage is placed very close to the gate of the second stage in layout. So the 80 pH output load, creates a LC resonance circuit, which maximizes the gain and avoids complex inter-stage matching network.
It will be understood to persons skilled in the art of the invention that many modifications may be made without departing from the spirit and scope of the invention, in particular it will be apparent that certain features of embodiments of the invention can be employed to form further embodiments. For example, the embodiment is described as a receiver circuit comprising two or more antennas, however, the amplification and switching stages could be formed separately from the antennas as an amplification and switching circuit before being connected to the antennas.
It is to be understood that, if any prior art is referred to herein, such reference does not constitute an admission that the prior art forms a part of the common general knowledge in the art in any country.
In the claims which follow and in the preceding description of the invention, except where the context requires otherwise due to express language or necessary implication, the word “comprise” or variations such as “comprises” or “comprising” is used in an inclusive sense, i.e. to specify the presence of the stated features but not to preclude the presence or addition of further features in various embodiments of the invention.
Number | Date | Country | Kind |
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2012905586 | Dec 2012 | AU | national |
Filing Document | Filing Date | Country | Kind |
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PCT/AU2013/001483 | 12/18/2013 | WO | 00 |