This Non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No(s). 201811085780.9 filed in People's Republic of China on Sep. 18, 2018, the entire contents of which are hereby incorporated by reference.
This invention relates to a technical field of a laser driver and, more particularly, to an accurate current mirror circuit in a low voltage headroom applied to the laser driver.
The lasers can have two driving modes: common-anode driving and common-cathode driving. The common-anode driving mode has higher efficiency. As shown in
However, under the conventional supply voltage of 3.3V (2.97V˜3.63V), the voltage headroom of the tail current source needs to be lower than 0.3V, which is difficult to achieve accurate modulation current due to the influence of the insufficient voltage headroom.
This invention provides an accurate current mirror circuit in a low voltage headroom applied to common-anode laser drivers to solve the above-mentioned problems.
To solve the above-mentioned problems, an embodiment of this invention provides the accurate current mirror circuit in the low voltage headroom applied to the laser driver, including a reference current detection unit, a tail current source unit, and a control unit;
the reference current detection unit is coupled with a reference current source, and the reference current detection unit is configured to receive a reference current of the reference current source and generate a bias voltage and a reference voltage according to the reference current;
the tail current source unit is coupled with the reference current detection unit, and the tail current source unit is configured to receive the bias voltage and generate a mirror current according to the bias voltage; and
the control unit is coupled with the reference current detection unit and the tail current source unit, and the control unit is configured to receive the reference voltage and an output voltage corresponding to the mirror current and carry out a feedback regulation to the bias voltage outputted by the reference current detection unit according to the reference voltage and the output voltage corresponding to the mirror current.
As an implement way, the tail current source unit may include a plurality of tail current source modules, and each may include a feedback resistor and a negative-positive-negative (NPN) triode. One end of the feedback resistor may be coupled with an output end of the reference current detection unit and configured to receive the bias voltage, and the other end of the feedback resistor may be coupled with a base of the NPN triode. A collector of the NPN triode may be coupled with an input end of the control unit, and an emitter of the NPN triode may be grounded.
As an implement way, the reference current detection unit may include a first n-channel metal oxide semiconductor (NMOS) transistor, a first NPN triode, and a bias resistor. A drain of the first NMOS transistor may be coupled with the reference current source, a gate of the first NMOS transistor may be coupled with an output end of the control unit, and a source of the first NMOS transistor may be coupled with a collector of the first NPN triode. A base of the first NPN triode may be coupled with one end of the bias resistor, an emitter of the first NPN triode may be grounded, and the other end of the bias resistor may be coupled with the tail current source unit.
As an implement way, the reference current detection unit may further include a second NMOS transistor. A drain of the second NMOS transistor may be coupled with a power supply voltage, a gate of the second NMOS transistor may be coupled with the drain of the first NMOS transistor, and a source of the second NMOS transistor may be coupled with a connection node of the reference current detection unit and the control unit.
As an implement way, the control unit may include an error amplifier, and the error amplifier may include two input ends and one output end. One of the input ends may be coupled with an output end of the tail current source unit, the other input end may be coupled with a connection node of the first NMOS transistor and the first NPN triode, and the output end may be coupled with the gate of the first NMOS transistor.
As an implement way, the reference current detection unit may include a bias resistor, the tail current source may include a plurality of feedback resistors, and the bias resistor and the feedback resistors may be of the same type.
Compared with the prior art, a beneficial effect of this invention is as follows. The bias voltage is generated through a feedback regulation of the reference voltage Vn and the output voltage Vp, and then the bias voltage is mirrored to generate the mirror current outputted to the laser, thus avoiding the problem of inaccurate current output caused by the offset of the control unit in the low voltage headroom.
Figure reference numerals: 1. reference current detection unit; 2. tail current source unit; and 3. control unit.
The above and other technical features and advantages of this invention will be clearly and completely described combining with the accompanying drawings hereinafter. Apparently, the described embodiments are merely parts of the embodiments of this invention instead of all the embodiments.
As shown in
The reference current detection unit 1 includes a first n-channel metal oxide semiconductor (NMOS) transistor M1, a first negative-positive-negative (NPN) triode B1, and a bias resistor R1. A drain of the first NMOS transistor M1 is coupled with the reference current source, a gate of the first NMOS transistor M1 is coupled with an output end of the control unit, and a source of the first NMOS transistor M1 is coupled with a collector of the first NPN triode B1. A base of the first NPN triode B1 is coupled with one end of the bias resistor R1, and an emitter of the first NPN triode B1 is grounded. The other end of the bias resistor R1 is coupled with the tail current source unit. The first NMOS transistor M1, the first NPN triode B1, and the bias resistor R1 form a negative feedback loop to ensure the stability of the loop.
In addition, the reference current detection unit 1 further includes a second NMOS transistor M2. A drain of the second NMOS transistor M2 is coupled with a power supply voltage VDD, a gate of the second NMOS transistor M2 is coupled with the drain of the first NMOS transistor M1, and a source of the second NMOS transistor M2 is coupled with a connection node of the reference current detection unit 1 and the control unit 3. The second NMOS transistor M2 is configured to supply a base current for the first NPN triode B1.
The tail current source unit 2 includes a plurality of tail current source modules, and each includes a feedback resistor and an NPN triode. One end of the feedback resistor is coupled with an output end of the reference current detection unit and configured to receive the bias voltage, and the other end of the feedback resistor is coupled with a base of the NPN triode. A collector of the NPN triode is coupled with an input end of the control unit, and an emitter of the NPN triode is grounded. In this embodiment, R2 and B2 in the figure are corresponding feedback resistor and NPN resistor in one group. Therefore, the tail current source unit includes feedback resistors R2˜Rm and NPN triodes B2˜Bm corresponding to the feedback resistors. A plurality of tail current source modules work together to generate a mirror current im corresponding to the bias voltage Vb outputted by the reference current detecting unit. In addition, the bias resistor R1 and the feedback resistors R2˜Rm are of the same type, NPN transistors B1˜Bm are of the same type, and feedback resistors R2˜Rm and the bias resistor R1 in the reference current detection unit are configured to reduce a mismatch problem of the NPN transistor B1 and NPN transistors B2-Bm.
The control unit 3 includes an error amplifier A1, and the error amplifier A1 includes two input ends and one output end. One of the input ends is coupled with an output end of the tail current source unit 2, the other input end is coupled with a connection node of the first NMOS transistor and the first NPN triode, and the output end is coupled with the gate of the first NMOS transistor. As both two input ends of the error amplifier A1 are coupled with the gates of the MOS transistors, there is no current closed circuit.
The error amplifier A1 locks a collector voltage Vn of the first NPN transistor B1 at the same potential as a collector voltage Vp of NPN transistors B2˜Bm, thus ensuring that three ends of the first NPN transistor B1 have the same level as NPN transistors B2˜Bm. In this embodiment, as a current mirror unit of the first NPN transistor B1 and a current mirror unit of the NPN transistors B2˜Bm have a relationship of 1:m−1, an accurate mirror current im=(m−1)·i0 is generated at the output end of the tail current source unit.
Since the voltage of the reference voltage Vn and the output voltage Vp does not change significantly with the reference current i0 and the mirror current im, even if the reference current i0 is very small, the reference voltage Vn and the output voltage Vp remain at about 0.3V, and the influence of an offset voltage of the error amplifier A1 on the accuracy of the mirror current can be ignored.
In this invention, the bias voltage is generated through the feedback regulation of the reference voltage Vn and the output voltage Vp, and then the bias voltage is mirrored to generate the mirror current outputted to the laser, thus avoiding the problem of inaccurate current output caused by the offset of the control unit in the low voltage headroom.
The specific embodiments described above further explain objectives, technical solutions, and beneficial effects of this invention, and it is understood that the above-mentioned description is only the embodiment of this invention and is not intended to limit the protection scope of this invention. It should be noted that for those skilled in the art, any made modifications, equivalent replacement, improvements, etc. within the spirit and principle of this invention are intended to be included in the protection scope of this invention.
Number | Date | Country | Kind |
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201811085780.9 | Sep 2018 | CN | national |