ACTIVE MATRIX DISPLAY COMPENSATING METHOD

Abstract

A method of compensating for changes in the threshold voltage of the drive transistor of an OLED drive circuit, comprising: providing the drive transistor with a first electrode, second electrode, and gate electrode; connecting a first voltage source to the first electrode, and an OLED device to the second electrode and to a second voltage source; providing a test voltage to the gate electrode of the drive transistor and connecting to the OLED drive circuit a test circuit that includes an adjustable current mirror that causes the voltage applied to the current mirror to be at a first test level; providing a test voltage to the gate electrode of the drive transistor and connecting the test circuit to the OLED device to produce a second test level after the drive transistor and the OLED device have aged; and using the first and second test levels to calculate a change in the voltage applied to the gate electrode of the drive transistor to compensate for aging of the drive transistor.

Description

FIELD OF THE INVENTION

The present invention relates to an active matrix-type display device for driving display elements.

BACKGROUND OF THE INVENTION

In recent years, it has become a requirement that image display devices have high-resolution and high picture quality. It is also desirable for such image display devices to have low power consumption and be thin, lightweight, and visible from wide angles. With such requirements, display devices (displays) have been developed where thin-film active elements (thin-film transistors, also referred to as TFTs) are formed on a glass substrate, with display elements formed on top.

In general, a substrate has a semiconductor film of silicon, e.g. amorphous silicon or polysilicon. Active elements are formed using the semiconductor film and then metal interconnects are formed. Due to differences in the electrical characteristics of the active elements, the former requires Integrated Circuits (ICs) for drive use, and the latter is capable of forming circuits for drive use on the substrate. In liquid crystal displays (LCDs) currently widely used, the amorphous silicon type is widespread for larger screens, while the polysilicon type is more common in medium and small screens.

Typically, organic EL elements, also called organic light-emitting diodes (OLED), are used in combination with TFTs and use a voltage/current control operation. The current/voltage control operation refers to the operation of applying a signal voltage to a TFT gate terminal so as to control current between two electrodes, one of which is connected to the OLED. As a result, it is possible to adjust the intensity of light emitted from the organic EL element and to control the display to the desired gradation.

However, in this configuration, the intensity of light emitted by the organic EL element is extremely sensitive to the TFT characteristics. In particular, for amorphous silicon TFTs (referred to as a-Si), it is known that comparatively large differences in electrical characteristics occur with time between neighboring pixels due to changes in transistor threshold voltage. This is a major cause of deterioration of the display quality of organic EL displays, in particular, screen uniformity. Uncompensated, this effect can lead to “burned-in” images on the screen.

Goh et al. (IEEE Electron Device Letters, Vol. 24, No. 9, pp. 583-585) have proposed a pixel circuit with a precharge cycle before data loading to compensate for this effect. Compared to the standard OLED pixel circuit with a capacitor, a select transistor, a power transistor, and power, data, and select lines, Goh's circuit uses an additional control line and two additional switching transistors. Jung et al. (IMID '05 Digest, pp. 793-796) have proposed a similar circuit with an additional control line, an additional capacitor, and three additional transistors. Although such circuits can be used to compensate for changes in the threshold voltage of the driving transistor, they add to the complexity of the display, thereby increasing the cost and the likelihood of defects in the manufactured product. Further, such circuitry generally comprises thin-film transistors (TFTs) that occupy a portion of the substrate area of the display. For bottom-emitting devices, where the aperture ratio is important, such additional circuitry reduces the aperture ratio, and can even make such bottom-emitting displays unusable. Thus, there exists a need to compensate for changes in the electrical characteristics of the pixel circuitry in an OLED display without reducing the aperture ratio of such a display.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide a method of compensating for changes in the electrical characteristics of the pixel circuitry in an OLED display.

This object is achieved by a method of compensating for changes in the threshold voltage of the drive transistor of an OLED drive circuit, comprising:

a) providing the drive transistor with a first electrode, a second electrode, and a gate electrode;

b) connecting a first voltage source to the first electrode of the drive transistor, and an OLED device to the second electrode of the drive transistor and to a second voltage source;

c) providing a test voltage to the gate electrode of the drive transistor and connecting to the OLED drive circuit a test circuit that includes an adjustable current mirror that is set to provide a predetermined drive current through the drive transistor and the OLED device and causes the voltage applied to the current mirror to be at a first test level when the drive transistor and the OLED device are not degraded by aging conditions, and storing the first test level;

d) providing a test voltage to the gate electrode of the drive transistor and connecting the test circuit to the OLED device to produce a second test level after the drive transistor and the OLED device have aged, and storing the second test level; and

e) using the first and second test levels to calculate a change in the voltage applied to the gate electrode of the drive transistor to compensate for aging of the drive transistor.

ADVANTAGES

It is an advantage of the present invention that it can compensate for changes in the electrical characteristics of the thin-film transistors of an OLED display. It is a further advantage of this invention that it can so compensate without reducing the aperture ratio of a bottom-emitting OLED display and without increasing the complexity of the within-pixel circuits.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic diagram of one embodiment of an OLED drive circuit that can be used in the practice of this invention;

FIG. 2 shows a schematic diagram of the OLED drive circuit of FIG. 1 connected to a test circuit that can be used in the practice of this invention;

FIG. 3 shows a block diagram of one embodiment of the method of this invention;

FIG. 4 shows a block diagram of a portion of the method of FIG. 3 in greater detail; and

FIG. 5 shows a schematic diagram of another embodiment of a OLED drive circuit connected to a test circuit that can be used in the practice of this invention.

DETAILED DESCRIPTION OF THE INVENTION

Turning now to FIG. 1, there is shown a schematic diagram of one embodiment of an OLED drive circuit that can be used in the practice of this invention. Such OLED drive circuits are well known in the art in active matrix OLED displays. OLED pixel drive circuit 100 has a data line 120, a power supply line or first voltage source 110, a select line 130, a drive transistor 170, a switch transistor 180, an OLED device 160 that can be a single pixel of an OLED display, and a capacitor 190. Drive transistor 170 is an amorphous-silicon (a-Si) transistor and has first electrode 145, second electrode 155, and gate electrode 165. First electrode 145 of drive transistor 170 is electrically connected to first voltage source 110, while second electrode 155 is electrically connected to OLED device 160. In this embodiment of pixel drive circuit 100, first electrode 145 of drive transistor 170 is a drain electrode and second electrode 155 is a source electrode. By electrically connected, it is meant that the elements are directly connected or connected via another component, e.g. a switch, a diode, another transistor, etc. OLED device 160 is a non-inverted OLED device, which is electrically connected to drive transistor 170 and to a second voltage source, which is negative relative to the first voltage source. In this embodiment, the second voltage source is ground 150. Those skilled in the art will recognize that other embodiments can utilize other sources as the second voltage source. Switch transistor 180 has a gate electrode electrically connected to select line 130, as well as source and drain electrodes, one of which is electrically connected to the gate electrode 165 of drive transistor 170, while the other is electrically connected to data line 120. OLED device 160 is powered by flow of current between power supply line 110 and ground 150. In this embodiment, the first voltage source (power supply line 110) has a positive potential, relative to the second voltage source (ground 150), to cause current to flow through drive transistor 170 and OLED device 160, so that OLED device 160 produces light. The magnitude of the current—and therefore the intensity of the emitted light—is controlled by drive transistor 170, and more exactly by the magnitude of the signal voltage on gate electrode 165 of drive transistor 170. During a write cycle, select line 130 activates switch transistor 180 for writing and the signal voltage data on data line 120 is written to drive transistor 170 and stored on capacitor 190, which is connected between gate electrode 165 and power supply line 110.

Transistors such as drive transistor 170 of OLED drive circuit 100 have a characteristic threshold voltage (V_th). The voltage on gate electrode 165 must be greater than the threshold voltage to enable current flow between first and second electrodes 145 and 155, respectively. For amorphous silicon transistors, the threshold voltage is known to change under aging conditions, which include placing drive transistor 170 under actual usage conditions, thereby leading to an increase in the threshold voltage. Therefore, a constant signal on gate electrode 165 will cause a gradually decreasing light intensity emitted by OLED device 160. The amount of such decrease will depend upon the use of drive transistor 170; thus, the decrease can be different for different drive transistors in a display. It is desirable to compensate for such changes in the threshold voltage to maintain consistent brightness and color balance of the display, and to prevent image “burn-in” wherein an often-displayed image (e.g. a network logo) can cause a ghost of itself to always show on the active display. Also, there can be age-related changes to OLED device 160, e.g. efficiency loss.

Turning now to FIG. 2, there is shown a schematic diagram of the OLED drive circuit 100 of FIG. 1 connected to a test circuit that can be used in the practice of this invention. Test circuit 200 includes an adjustable current mirror 210, a calibrated second voltage source 220, a low-pass filter 230, and an analog-to-digital converter 240. The signal from analog-to-digital converter 240 is sent to processor 250. Low-pass filter 230, analog-to-digital converter 240, and processor 250 comprise measurement apparatus 260. Adjustable current mirror 210 can be set to provide a predetermined drive current through drive transistor 170 and OLED device 160. In this embodiment, adjustable current mirror 210 is an adjustable current sink as known in the art. It will be understood that other embodiments are possible that instead incorporate an adjustable current source. OLED drive circuit 100 can be switched between ground 150 and test circuit 200 by switch 185. When OLED drive circuit 100 is connected to test circuit 200, OLED device 160 is electrically connected to adjustable second voltage source 220.

In the most basic case, a single drive transistor 170 of OLED drive circuit 100 is measured by test circuit 200. To use test circuit 200, one first sets switch 185 to connect test circuit 200 to OLED drive circuit 100. Next, adjustable current mirror 210 is set to provide the predetermined drive current I_mir, which is a characteristic current for OLED device 160. I_mir is selected to be less than the maximum current possible through drive transistor 170 and OLED device 160; a typical value for I_mir will be in the range of 1 to 5 microamps and will be constant for all measurements during the lifetime of the OLED device. A test voltage data value V_test is provided to gate electrode 165 of drive transistor 170 sufficient to provide a current through drive transistor 170 greater than the selected value for I_mir. Thus, the limiting value of current through drive transistor 170 and OLED device 160 will be controlled entirely by adjustable current mirror 210, and the current through adjustable current mirror 210 (I_mir) will be the same as through drive transistor 170 (I_ds) and OLED device 160 (I_OLED). The selected value of V_test is constant for all measurements during the lifetime of the display, and therefore must be sufficient to provide a drive-transistor current greater than I_mir even after aging expected during the lifetime of the display. The value of V_test can be selected based upon known or determined current-voltage and aging characteristics of drive transistor 170. CV_cal is set to allow sufficient voltage adjustment of the current mirror voltage, V_mir, to maintain I_mir when the threshold voltage (V_th) of drive transistor 170 changes. This value of CV_cal will be used for all measurements during the lifetime of the display. The voltages of the components in the circuit can be related by:

V _test =CV _cal +V _mir +V _OLED +V _gs  (Eq. 1)

which can be rewritten as:

V _mir =V _test−(CV_cal+V_OLED+V_gs)  (Eq. 2)

Under the conditions described above, V_test and CV_cal are set values. V_gs will be controlled by the value of I_mir and the current-voltage characteristics of drive transistor 170, and will change with age-related changes in the threshold voltage of drive transistor 170. V_OLED will be controlled by the value of I_mir and the current-voltage characteristics of OLED device 160. V_OLED can change with age-related changes in OLED device 160.

The values of these voltages will cause the voltage applied to current mirror 210 (V_mir) to adjust to fulfill Eq. 2. This can be measured by measurement apparatus 260 and will be called the test level. To determine the change in the threshold voltage of drive transistor 170 (and the change in V_OLED, if any), two tests are performed. The first test is performed when drive transistor 170 and OLED device 160 are not degraded by aging, e.g. before OLED drive circuit 100 is used for display purposes, to cause the voltage V_mir applied current mirror 210 to be at a first test level. The first test level is measured and stored. After drive transistor 170 and OLED device 160 have aged, e.g. by displaying images for a predetermined time, the measurement is repeated with the same V_test and CV_cal. Changes to the threshold voltage of drive transistor 170 will cause a change to V_gs to maintain I_mir, while changes in OLED device 160 can cause changes to V_OLED. These changes will be reflected in changes to V_mir in Eq. 2, so as to produce voltage V_mir at a second test level. The second test level can be measured and stored. The first and second test levels can be used to calculate a change in the voltage applied to current mirror 210, which is related to the changes in the drive transistor and the OLED device as follows:

ΔV _mir=−(ΔV_OLED+ΔV_gs)  (Eq. 3)

Thus, to compensate for changes due to aging of drive transistor 170 and possibly OLED device 160, a change (ΔV_g) in the voltage V_g to be applied to gate electrode 165 of drive transistor 170 can be calculated as:

ΔV _g =−ΔV _mir =ΔV _OLED +ΔV _gs  (Eq. 4)

In many cases, OLED drive circuit 100 is but one pixel of a much larger OLED display comprising an array of pixels with a plurality of OLED drive circuits. Each OLED drive circuit includes a drive transistor and an OLED device as described above. A single drive transistor 170 can be measured by test circuit 200. This can be accomplished by putting a test voltage (V_test) on gate electrode 165 of a single drive transistor 170, and setting the gate voltages (V_g) for all other drive transistors in a display to zero, thus putting them in the off state. Ideally, current would then flow only through drive transistor 170 and corresponding OLED device 160, and thus the current through adjustable current mirror 210 (I_mir) would be the same as through drive transistor 170 (I_ds) and OLED device 160 (I_OLED), as above. In practice, the drive circuits that are in the off state have a slight current leakage, which can be significant due to the large number of drive circuits in the off state. The leakage current is shown as off-pixel current 175 (I_off, also known as dark current) in FIG. 2, and is part of the total current through adjustable current mirror 210, that is,

I _mir =I _OLED +I _off  (Eq. 5)

To use test circuit 200 with a plurality of OLED drive circuits, one first sets switch 185 to connect test circuit 200 to the display, including OLED drive circuit 100. CV_cal is set such that a negative V_gs will be applied to all the drive circuits that are off to reduce the amount of off-pixel current 175. Thus, if V_g for the drive circuits in the off condition is zero volts, CV_cal is set to be greater than or equal to zero volts. This value for CV_cal will be used for all measurements during the lifetime of the display. Before measuring any individual OLED drive circuit, all drive circuits are programmed to their off condition, e.g. V_g is set to zero for all drive circuits, to provide the off-pixel current I_off for the display. Adjustable current mirror 210 is programmed to the off-pixel current at a selected mirror voltage V_mir. V_mir for the off-pixel current is selected to permit sufficient adjustment in the voltage over the life of OLED drive circuit 100. Typically, V_mir for the off-pixel current will be selected in the range of 1 to 6 volts, and this value will be used for all measurements during the lifetime of the display. Next, adjustable current mirror 210 is incremented to allow passage of an additional characteristic current I_OLED for a single pixel, e.g. OLED device 160. I_OLED is selected as described above; a typical value for I_OLED will be in the range of 1 to 5 microamps and will be constant for all measurements during the lifetime of the display. A data value V_test is written to gate electrode 165 sufficient to provide a current through drive transistor 170 greater than the selected value for I_OLED. Thus, the limiting value of current through drive transistor 170 and corresponding OLED device 160 will be controlled entirely by adjustable current mirror 210. The value of V_test is selected as described above and is constant for all measurements during the lifetime of the display. The gate electrodes of all other OLED drive circuits in the display remain at the off value (e.g. zero volts). The voltages of the components in OLED drive circuit 100 can be related by Eq. 2. above.

Under these conditions, V_test and CV_cal are set values. V_gs will be controlled by the value of I_OLED and the current-voltage characteristics of drive transistor 170, and will change with age-related changes in the threshold voltage of drive transistor 170. V_OLED will be controlled by the value of I_OLED and the current-voltage characteristics of OLED device 160. V_OLED can change with age-related changes in OLED device 160. The voltage through current mirror 210, V_mir, will self-adjust to fulfill Eq. 2, above, to be at the test level, which can be measured by measurement apparatus 260. To determine the change in the threshold voltage of drive transistor 170 (and the change in V_OLED, if any), two tests are performed as described above: a first test when drive transistor 170 and OLED device 160 are not degraded by aging to produce a first test level, and a second after drive transistor 170 and OLED device 160 have aged to produce a second test level. The first and second test levels can be used to calculate a change in the voltage applied to current mirror 210, which is related to the changes in the drive transistor and the corresponding OLED device as shown above in Eq. 3. Thus, to compensate for changes due to aging of drive transistor 170 and possibly corresponding OLED device 160, a change (ΔV_g) in the voltage V_g to be applied to gate electrode 165 of drive transistor 170 can be calculated as shown above in Eq. 4. This can be repeated individually for each drive circuit in the display.

In another embodiment of this method, the test levels can be obtained for a group of drive circuits, e.g. a complete row or column of drive circuits. This provides an average test level and an average ΔV_g for each group of drive circuits, and has the advantage of requiring less time and storage memory for the method.

Turning now to FIG. 3, and referring also to FIG. 2, there is shown a block diagram of one embodiment of the method of this invention. In method 300, the voltage at current mirror 210 for an OLED drive circuit 100 is measured by measurement apparatus 260 (Step 310). This measurement, which is done when drive transistor 170 and OLED device 160 are not degraded by aging conditions, e.g. just after manufacturing the OLED display, or at a time after manufacturing before the OLED display has had significant use, is at a first test level. The first test level is stored by processor 250 (Step 315). After drive transistor 170 and OLED device 160 have aged, the measurement is repeated, to provide a voltage at current mirror 210 at a second test level (Step 320). The second test level is stored by processor 250 (Step 325). Then, processor 250 uses the first and second test levels to calculate a change in the voltage applied to gate electrode 165 of drive transistor 170 to compensate for aging of the drive transistor, as in Eq. 4 above (Step 330). This change in voltage is applied to the voltage at gate electrode 165 to compensate for aging of OLED device 160 and drive transistor 170 (Step 335).

Turning now to FIG. 4, and referring also to FIG. 2, there is shown a block diagram of a portion of the method of FIG. 3 in greater detail. FIG. 4 represents individual steps in Step 310 of FIG. 3, as well as Step 320. Initially, switch 185, which is connected to the common cathode of the display, connects OLED drive circuit 100 to test circuit 200 instead of second voltage source 150 (Step 340). Then all drive circuits in the display are programmed to be off by setting the data on gate electrode 165 to zero for every OLED drive circuit in the display (Step 350). If the drive transistors 170 were ideal transistors, no current would flow; however, as non-ideal transistors, they do indeed pass some current under these conditions, indicated as off-pixel current 175. Adjustable current mirror 210 is programmed to equal off-pixel current 175 (Step 360); that is, adjustable current mirror 210 is set to pass off-pixel current 175 as its maximum passable current at the selected V_mir. Then adjustable current mirror 210 is programmed to equal off-pixel current 175 plus the desired current through the individual drive transistor 170 when in the on condition (Step 370). Then drive transistor 170 is set to a high state by placing a data value on gate electrode 165 (Step 380). The data value placed on gate electrode 165 is sufficient to provide a current passing through drive transistor 170 that is greater than the current that will be allowed by adjustable current mirror 210, even when drive transistor 170 has been aged for the expected lifetime of the display. Thus, adjustable current mirror 210 will be the current-limiting apparatus under these conditions. Then the voltage is measured by measurement apparatus 260 (Step 390) to provide the test level. For displays of multiple drive circuits, steps 380 and 390 can be repeated for each individual drive circuit.

Turning now to FIG. 5, there is shown a schematic diagram of another embodiment of an OLED drive circuit connected to a test circuit that can be used in the practice of this invention. OLED drive circuit 105 is constructed much as OLED drive circuit 100 described above. However, OLED device 140 is an inverted OLED device, wherein the anode of the pixel is electrically connected to power line 110 and the cathode of the pixel is electrically connected to second electrode 155 of drive transistor 170. In this embodiment, first electrode 145 is the source and second electrode 155 is the drain. In the method described above, the voltages between gate electrode 165 and calibrated second voltage source 220 have an effect on the measurement of the test level. Therefore, aging of OLED device 140 will have no effect on the test level measured, and a change in the voltage applied to gate electrode 165 will compensate for aging of drive transistor 170 only. With the method of this invention applied to this embodiment, the voltages of the components in the circuit can be related by:

V _test =CV _cal +V _mir +V _gs  (Eq. 6)

which can be rewritten as:

V _mir =V _test−(CV_cal+V_gs)  (Eq. 7)

The change in voltage at current mirror 220 will then be related as follows:

ΔV _mir =−ΔV _gs  (Eq. 8)

and the change in the voltage to be applied to gate electrode 165 will be:

ΔV _g =−ΔV _mir =ΔV _gs  (Eq. 9)

The above embodiments are constructed wherein the drive transistors and switch transistors are n-type transistors. It will be understood by those skilled in the art that embodiments wherein the drive transistors and switch transistors are p-type transistors, with appropriate well-known modifications to the circuits, can also be useful in this invention.

The invention has been described in detail with particular reference to certain preferred embodiments thereof, but it will be understood that variations and modifications can be effected within the spirit and scope of the invention.

PARTS LIST

• • 100 OLED drive circuit
  • 105 OLED drive circuit
  • 110 first voltage source
  • 120 data line
  • 130 select line
  • 140 OLED device
  • 145 first electrode
  • 150 ground
  • 155 second electrode
  • 160 OLED device
  • 165 gate electrode
  • 170 drive transistor
  • 175 off-pixel current
  • 180 switch transistor
  • 185 switch
  • 190 capacitor
  • 200 test circuit
  • 210 adjustable current mirror
  • 220 calibrated second voltage source
  • 230 low-pass filter
  • 240 analog-to-digital converter
  • 250 processor
  • 260 measurement apparatus
  • 300 method
  • 310 block
  • 315 block
  • 320 block
  • 325 block
  • 330 block
  • 335 block
  • 340 block
  • 350 block
  • 360 block
  • 370 block
  • 380 block
  • 390 block

Claims

1. A method of compensating for changes in the threshold voltage of the drive transistor of an OLED drive circuit, comprising: a) providing the drive transistor with a first electrode, a second electrode, and a gate electrode;b) connecting a first voltage source to the first electrode of the drive transistor, and an OLED device to the second electrode of the drive transistor and to a second voltage source;c) providing a test voltage to the gate electrode of the drive transistor and connecting to the OLED drive circuit a test circuit that includes an adjustable current mirror that is set to provide a predetermined drive current through the drive transistor and the OLED device and causes the voltage applied to the current mirror to be at a first test level when the drive transistor and the OLED device are not degraded by aging conditions, and storing the first test level;d) providing a test voltage to the gate electrode of the drive transistor and connecting the test circuit to the OLED device to produce a second test level after the drive transistor and the OLED device have aged, and storing the second test level; ande) using the first and second test levels to calculate a change in the voltage applied to the gate electrode of the drive transistor to compensate for aging of the drive transistor.

2. The method of claim 1 wherein the first electrode is the drain, the second electrode is the source, and the OLED device is a non-inverted OLED device.

3. The method of claim 2 wherein the change in voltage applied to the gate electrode also compensates for aging of the OLED device.

4. The method of claim 1 wherein the first electrode is the source, the second electrode is the drain, and the OLED device is an inverted OLED device.

5. The method of claim 1 wherein the drive transistor is an amorphous silicon transistor.

6. The method of claim 5 wherein the drive transistor is an n-type transistor.

7. The apparatus of claim 5 wherein the drive transistor is a p-type transistor.

8. The method of claim 1 wherein the test circuit includes a low-pass filter and an analog-to-digital converter.

9. A method of compensating for changes in the threshold voltage of the drive transistor for an OLED device in a plurality of OLED drive circuits, comprising: a) including in each drive circuit a drive transistor with a first electrode, a second electrode, and a gate electrode, and connecting a first voltage source to the first electrode of the drive transistor, and an OLED device to the second electrode of the drive transistor and to a second voltage source;b) connecting a test circuit to the OLED drive circuits, and simultaneously providing individually a test voltage to the gate electrode of each of the drive transistors, and providing the test circuit with an adjustable current mirror that is set to provide a predetermined drive current through the drive transistors and the OLED devices and causes the voltage applied to the current mirror to be at a first test level when the drive transistors and OLED devices are not degraded by aging conditions, and storing the first test level;c) again connecting the test circuit to the OLED drive circuits and simultaneously providing individually a test voltage to the gate electrode of each of the drive transistors to produce a second test level after the drive transistors and the OLED devices have aged, and storing the second test level; andd) using the first and second test levels to calculate a change in the voltage applied to the gate electrode of each drive transistor to compensate for aging of each drive transistor.

10. The method of claim 9 wherein the first electrode is the drain, the second electrode is the source, and the OLED device is a non-inverted OLED device.

11. The method of claim 10 wherein the change in the voltage applied to the gate electrode of each drive transistor also compensates for the aging of the corresponding OLED device.

12. The method of claim 9 wherein the first electrode is the source, the second electrode is the drain, and the OLED device is an inverted OLED device.

13. The method of claim 9 wherein the drive transistor is an amorphous silicon transistor.

14. The method of claim 13 wherein the drive transistor is an n-type transistor.

15. The apparatus of claim 13 wherein the drive transistor is a p-type transistor.

16. The method of claim 9 wherein the test circuit includes a low-pass filter and an analog-to-digital converter.