This application is a U. S. National Stage of International No. PCT/CN2013/084055, filed on Sep. 24, 2013. This application claims the benefit of Chinese Patent Application No. 201310260936.3, filed on Jun. 26, 2013. The disclosures of the above applications are incorporated herein by reference.
The present invention relates to the field of display, in particular to an active matrix organic light emitting diode pixel unit circuit, a display panel and an electronic product.
The technology of Touch Screen Panel (TSP) in Cell is to manufacture a TSP sensor and a driving circuit thereof on an array substrate using an array process. The TSP sensor is integrated with a liquid crystal cell of a Liquid Crystal Display (LCD) panel so that the product is light and thin and has versatile functionalities. Therefore, the reliability of the TSP is effectively improved.
Compared with a traditional liquid crystal panel, an Active Matrix Organic Light Emitting Diode (AMOLED) has characteristics of rapider response, higher contrast ratio, and wider angle of view or the like. Pixels of AMOLED are driven to emit light and display by a related driving circuit on the array substrate.
If the TSP in cell circuit shown in
An embodiment of present invention provides an Active Matrix Organic Light Emitting Diode (AMOLED) pixel unit circuit, a display panel and an electronic product, for integrating a touch screen circuit into the AMOLED pixel unit circuit, manufacturing an AMOLED display panel having the functionality of a touch screen, and producing an electronic product having the display panel.
An embodiment of present invention provides an active matrix organic light emitting diode pixel unit circuit, comprising: a light emitting module, a driving module, a threshold compensation module, a light emitting control module, a touch sensing module and a sensing signal outputting module, wherein
the driving module is configured to amplify a sensing signal generated by the touch sensing module, output the sensing signal through the sensing signal outputting module, and drive the light emitting module;
the light emitting control module is configured to control the light emitting module to emit light;
the threshold compensation module is configured to compensate a threshold voltage of the driving module;
the touch sensing module is configured to generate the sensing signal and output the sensing signal to the driving module; and
the sensing signal outputting module is configured to output the sensing signal amplified by the driving module.
An embodiment of present invention provides a display panel, comprising the AMOLED pixel unit circuit.
An embodiment of present invention provides an electronic product having the display panel.
According to above technical solution, a few circuit components are added into the AMOLED pixel unit circuit according to an embodiment of the present invention, and the TSP in Cell circuit is integrated into the AMOLED pixel unit circuit using common data lines, circuit components and control signals and so on.
An embodiment of the present invention provides an Active Matrix Organic Light Emitting Diode (AMOLED) pixel unit circuit, a display panel and an electronic product for integrating the touch screen circuit into the AMOLED pixel unit circuit, manufacturing an AMOLED display panel having the functionality of a touch screen function, and producing an electronic product having the display panel.
With reference to
the driving module 11 is configured to amplify a sensing signal generated by the touch sensing module 15, output the sensing signal through the sensing signal outputting module 16, and drive the light emitting module 13;
the light emitting control module 12 is configured to control the light emitting module 13 to emit light;
the threshold compensation module 14 is configured to compensate a threshold voltage of the driving module 11;
the touch sensing module 15 is configured to generate the sensing signal and output the sensing signal to the driving module 11; and
the sensing signal outputting module 16 is configured to output the sensing signal amplified by the driving module 11.
Preferably, the driving module 11 comprises a first transistor T1, the gate electrode thereof is connected to a first node P1 of the circuit, and the other two electrodes are connected to a second node P2 and a third node P3 of the circuit respectively.
Preferably, the light emitting control module 12 comprises a second transistor T2, a fifth transistor T5 and a sixth transistor T6. The gate electrode of the second transistor T2 is connected to a second signal control line of the AMOLED pixel unit circuit in the same stage (corresponding to the second signal CR2_n of the AMOLED pixel unit circuit in the same stage), and the two other electrodes are connected to a low voltage level signal line (corresponding to the low voltage level signal VSS) and the second node P2 of the circuit respectively; the gate electrode of the fifth transistor T5 is connected to a first signal control line of the AMOLED pixel unit circuit in the same stage (corresponding to the first signal CR1_n of the AMOLED pixel unit circuit in the same stage), and the other two electrodes are connected to the third node P3 of the circuit and the power line (corresponding to POWER) respectively; and the gate electrode of the sixth transistor T6 is connected to the second signal control line of the AMOLED pixel unit circuit in the same stage (corresponding to the second signal CR2_n of the AMOLED pixel unit circuit in the same stage), and the other two electrodes are connected to the third node P3 of the circuit and light emitting module 13 respectively.
Preferably, the light emitting module 13 comprises a light emitting diode D1 one end thereof is connected to the sixth transistor T6 and the other end is connected to the power line (corresponding to POWER).
Preferably, the threshold compensation module 14 comprises a fourth transistor T4 and a first capacitor C1;
Wherein, the gate electrode of the fourth transistor T4 is connected to a third signal control line of the AMOLED pixel unit circuit in the same stage (corresponding to the third signal CR3_n of the AMOLED pixel unit circuit in the same stage), and the other two electrodes are connected to the third node P3 and the first node P1 respectively; and the first capacitor C1 is connected between the first node P1 and the low voltage level signal line (corresponding to the low voltage level signal VSS).
Preferably, the touch sensing module 15 comprises a seventh transistor T7 and a photodiode D2. Wherein the gate electrode of the seventh transistor T7 is connected to the first signal control line of the AMOLED pixel unit circuit in the same stage (corresponding to the first signal CR1_n of the AMOLED pixel unit circuit in the same stage), and the other two electrodes are connected to the photodiode D2 and the first node P1 respectively; and one end of the photodiode D2 is connected to the seventh transistor T7 and the other end is connected to the low voltage level signal line (corresponding to the low voltage level signal VSS); or
With reference to
When the seventh transistor T7 is turned ON, the induction element D2 or C2 may generate induced current input the induced current into the first transistor T1, the first transistor T1 amplifies the induced current and the sensing signal outputting module 16 outputs the same to a data line 16 (corresponding to the data signal DATA_OLED&TSP).
The capacitor C1 may be used by the touch sensing module 15 as a storage capacitor, and the power line is used to alternatively input operating level required by the TSP in Cell circuit and the AMOLED circuit.
There are two embodiments of the induction element in the present invention, one embodiment is that, as shown in
Preferably, the sensing signal outputting module 16 comprises a third transistor T3. The gate electrode of the third transistor T3 is connected to the second signal control line of the AMOLED pixel unit circuit in the same stage (corresponding to the second signal CR2_n of the AMOLED pixel unit circuit in the same stage), and the other two electrodes are connected to the data line (corresponding to the data signal DATA_OLED&TSP) and the second node P2 respectively.
Preferably, the anode of the photodiode D2 is connected to the low voltage level signal line (corresponding to the low voltage level signal VSS), and the cathode of the photodiode D2 is connected to the seventh transistor T7.
Preferably, the cathode of the light emitting diode D1 is connected to the sixth transistor T6, and the anode of the light emitting diode D1 is connected to the power line.
Preferably, the first transistor T1, the second transistor T2, the forth transistor T4, the fifth transistor T5, and the sixth transistor T6 are N-type TFTs, and the third transistor T3 is a P-type TFT.
According to an embodiment of the present invention, the value of the third control signal VSS is maintained as a constant, and may be the cut-off level of the N-type TFT specifically.
Next, the working principle of the circuit provided by an embodiment of the present invention will be described with reference to
Init Phase: T5 is ON so that light emitting diode D1 is OFF, and T7 is so that the photodiode D2 functioned as a TPS sensor is connected to the gate electrode of the amplifying transistor T1. C1 functions as a storage capacitor of the TSP amplifying TFT T1. T4 is ON, the level of POWER is VINI, and the TSP in Cell circuit is initialized, that is to say, the storage capacitor of the gate electrode of the amplifying transistor T1 is precharged to the initialized level VINI in order to ensure that T1 works in a saturated and amplified state during the subsequent phases.
Photo Phase: T4 is OFF; the photodiode D2 detects the touch state of a panel. When the panel is touched by a finger, the external light source cannot illuminate the photodiode D2, D2 receives less light and its light induced leakage current is small, and the change of the voltage level of C1 caused by electric leakage is smaller during the Photo Phase. When the panel is not touched by a finger, the external light source may illuminate the photodiode D2, D2 receives light and generates a larger light induced leakage current, and the change of the voltage level of C1 caused by electric leakage is larger during the Photo Phase. Therefore, if the panel is touched, the difference between the voltage of the gate electrode of T1 and the initial voltage is small, and if the panel is not touched, the difference between the voltage of the gate electrode of T1 and the initial voltage is large.
After Photo phase begins, the pixels in the previous line are driven by CR2_n−1 and still in Write Phase, and DATA_OLED&TSP inputs DATA voltage level into T1 of the pixels in the previous line. Since a plurality of lines of pixels share DATA_OLED&TSP, during Photo Phase, the voltage level of CR2_n jumps to a low voltage level after the Write Phase of the pixels in previous line is ended.
Read Phase: Results of Photo Phase are stored in C1. At this time, T3 is ON, and DATA_OLED&TSP functions as a readout line for the output voltage of the TSP in Cell, then the amplified transistor T1 amplifies the voltage of the gate electrode of T1 and output the same to the readout line so as to output it to a peripheral TSP readout circuit.
The TSP in Cell circuit works in above three phases, the touch from outside may be sensed and the sensing signal is outputted. Then, the circuit goes into the working phases of AMOLED.
Charge Phase: T4 and T5 are ON, the storage capacitor is charged, the voltage level of the gate electrode of T1 is VINI, and T1 may be regarded as a diode and goes into a saturation state.
Write Phase: T2, T5, and T6 are OFF, T3 and T4 are ON. At this time, DATA_OLED&TSP is used as a data signal input of AMOLED and DATA_OLED&TSP inputs VDATA voltage, the voltage level of node P2 (that is the voltage level of the source electrode of T1) is VDATA, and the initial gate-source voltage VGS of T1 is VINI-VDATA. C1 begins to discharge through T1, T3, and T4 so that the voltage level of the gate electrode of T1 reduces gradually until the gate-source voltage VGS of T1 reaches a threshold voltage VTH. At this time, T1 goes into sub-threshold conducting, and T1 is OFF, and C1 stops discharging through T1. Since C1 has the function of voltage holding and the other end of C1 is connected to VSS, the voltage level of the gate electrode of T1 is VTH+VDATA at this time.
OLED Phase: T3 and T4 are OFF, and T2, T5 and T6 are ON, and OLED begins to emit light. T2 is ON so that the source electrode of T1 is connected to VSS, that is to say, the gate-source voltage of the driving transistor T1 is VGS=VDATA+VTH−VSS.
At this time, the current flowing through the OLED is:
Wherein, k is a constant, and the range of VDATA is VDL to VDH.
An embodiment of the present invention further provides a display panel including the AMOLED pixel unit circuit.
The present invention further provides an electronic product including the display panel.
In conclusion, by redesigning the time sequences and voltage level values of the working signals, and adding a few circuit elements into the existing AMOLED pixel unit circuit, embodiments of the present invention achieve integrating the TSP in Cell circuit into the AMOLED pixel unit circuit by sharing data lines, circuit elements, control signals and or the like.
The above are merely the preferred embodiments of the present invention. It should be noted that, a person skilled in the art may make further improvements and modifications without departing from the principle of the present invention, and these improvements and modifications shall also be considered as the scope of the present invention.
Number | Date | Country | Kind |
---|---|---|---|
2013 1 0260936 | Jun 2013 | CN | national |
Filing Document | Filing Date | Country | Kind |
---|---|---|---|
PCT/CN2013/084055 | 9/24/2013 | WO | 00 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO2014/205931 | 12/31/2014 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
20050093791 | Lo | May 2005 | A1 |
20060164344 | Fish | Jul 2006 | A1 |
20060214893 | Tseng et al. | Sep 2006 | A1 |
20060267508 | Sun | Nov 2006 | A1 |
20090153438 | Miller et al. | Jun 2009 | A1 |
20090225011 | Choi | Sep 2009 | A1 |
20090231308 | Numao | Sep 2009 | A1 |
20100012823 | Ahn | Jan 2010 | A1 |
20100039406 | Lee et al. | Feb 2010 | A1 |
20100097350 | Choi | Apr 2010 | A1 |
20100097354 | Ahn | Apr 2010 | A1 |
20100144391 | Chang et al. | Jun 2010 | A1 |
20100220069 | Choi et al. | Sep 2010 | A1 |
20110001711 | Choi | Jan 2011 | A1 |
20110115764 | Chung | May 2011 | A1 |
20120038585 | Kim | Feb 2012 | A1 |
20120044176 | Nakamura et al. | Feb 2012 | A1 |
20120061556 | Chan | Mar 2012 | A1 |
20120154319 | Konicek | Jun 2012 | A1 |
20130063407 | Usukura et al. | Mar 2013 | A1 |
20130088165 | Wang et al. | Apr 2013 | A1 |
20130106828 | Kim | May 2013 | A1 |
20130127787 | Kim et al. | May 2013 | A1 |
20130146881 | Yamazaki et al. | Jun 2013 | A1 |
20140055326 | Lai | Feb 2014 | A1 |
20140118231 | Yang et al. | May 2014 | A1 |
20140168127 | Yang | Jun 2014 | A1 |
Number | Date | Country |
---|---|---|
1669067 | Sep 2005 | CN |
101576676 | Nov 2009 | CN |
101587256 | Nov 2009 | CN |
101587400 | Nov 2009 | CN |
101630481 | Jan 2010 | CN |
101726890 | Jun 2010 | CN |
101943974 | Jan 2011 | CN |
101944323 | Jan 2011 | CN |
102117596 | Jul 2011 | CN |
102402931 | Apr 2012 | CN |
102903333 | Jan 2013 | CN |
103135846 | Jun 2013 | CN |
103295525 | Sep 2013 | CN |
103325343 | Sep 2013 | CN |
103354078 | Oct 2013 | CN |
103354079 | Oct 2013 | CN |
103354080 | Oct 2013 | CN |
203242305 | Oct 2013 | CN |
203300191 | Nov 2013 | CN |
203300192 | Nov 2013 | CN |
203300193 | Nov 2013 | CN |
203300194 | Nov 2013 | CN |
2010085526 | Apr 2010 | JP |
20070115261 | Dec 2007 | KR |
20090009387 | Jan 2009 | KR |
Entry |
---|
Fourth Office Action regarding Chinese application No. 201310260936.3, dated Sep. 30, 2015. Translation provided by Dragon Intellectual Property Law Firm. |
Written Opinion of the International Searching Authority for international application No. PCT/CN2013/084055. |
International Search Report and Written Opinion dated Sep. 24, 2013 regarding PCT/CN2013/084055. |
Chinese Office Action dated Feb. 28, 2015 regarding Chinese Application no. 201310260936.3 Translation provided by Dragon Intellectual Property Law Firm. |
Chinese Office Action dated Dec. 3, 2014 regarding Application No. 201310260936.3, filed Jun. 26, 2013. Translation provided by Dragon Intellectual Property Law Firm. |
First Chinese Office Action regarding Application No. 2013102600458 dated Nov. 24, 2014. Translation provided by Dragon Intellectual Property Law Firm. |
Written Opinion of the International Searching Authority regarding International Application No. PCT/CN2013/084057. |
First Chinese Office Action regarding Application No. 2013102597065 dated Nov. 15, 2014. Translation provided by Dragon Intellectual Property Law Firm. |
Written Opinion of the International Searching Authority for International Application No. PCT/CN2013/084919. |
First Chinese Office Action regarding Application No. 2013102716882 dated Nov. 3, 2014. Translation provided by Dragon Intellectual Property Law Firm. |
Written Opinion of the International Searching Authority regarding International Application No. PCT/CN2013-089701. |
Number | Date | Country | |
---|---|---|---|
20150301674 A1 | Oct 2015 | US |