Particularly in a bridge converter with self-driven synchronous rectifiers, there exists a large amount of leakage inductance energy that needs to be captured and either dissipated or recirculated. Otherwise, the synchronous rectifier (which is typically a MOSFET) will be subject to losses due to the leakage inductance energy imposed on the synchronous rectifier during switching transitions. This results in, among other things, reduced efficiency for the converter, and may require physically larger are more expensive components to accommodate the increased voltage levels. Moreover, dissipating the captured energy in a resistive element will produce a large amount of heat that must be managed and will also result in reduced efficiency. Accordingly, there exists a need for a mechanism to recirculate the captured leakage energy in an efficient manner.
In one general aspect, the present invention is directed to a snubber circuit for use with a self-driven synchronous rectifier in a power converter. The snubber circuit, in various embodiments, captures and recirculates energy from the leakage inductance of a transformer winding of the converter in a substantially lossless manner. According to various embodiments, the snubber circuit comprises a capacitance for storing the energy accumulated in the leakage inductance of the transformer winding of the converter. The snubber circuit further includes a discontinuous inductor, and a switch for transferring, when on, the energy stored in the capacitance to the inductor. The energy in the inductor may then be discharged when the switch is off.
According to various implementations, the switch may be p-channel MOSFET and the control (gate) terminal of the switch may be responsive to the voltage across the synchronous rectifier. For example, the switch may be on when the synchronous rectifier is on. Further, the discontinuous winding may include first and second windings connected to the output of the power converter. The second winding may have more windings than the first winding, and the energy transferred to the inductor may be discharged through a diode connected to the second winding. In addition, for each synchronous rectifier in the converter, the snubber circuit may include a diode for transferring the leakage inductance energy of the transformer winding to the capacitance when the associated synchronous rectifier is off.
In another general aspect, the present invention is directed to a power converter. According to various embodiments, the power converter comprises a transformer winding including a leakage inductance and at least one self-driven synchronous rectifier for rectifying a voltage across the transformer winding. The power converter further includes a snubber circuit, such as described above, for capturing and recirculating the energy from the leakage inductance of the transformer winding.
According to various implementations of the snubber circuit, as the peak voltage on the capacitance increases, the peak current in the inductor increases, and thereby the energy captured and recirculated increases. This natural tendency allows the snubber circuit to maintain a constant peak voltage on the synchronous rectifiers under different load conditions, and keeps the snubber circuit working just as hard as it needs to. These and other benefits of the present invention will be apparent from the description below.
Various embodiments of the present invention are described herein by way of example in conjunction with the following figures, wherein:
a–d are idealized timing diagrams illustrating the operation of the converter of
a–e include idealized voltage and current waveforms for components of the power converter of
The converter 10 of
In the illustrated embodiment, the transformer T1 includes one primary winding P1 and two secondary windings S1, S2. Two synchronous rectifiers Q1, Q2 are used to rectify the voltage across the first secondary winding S1. The synchronous rectifiers (“SRs”) Q1, Q2 may be transistors, and are preferably MOSFETs. The SRs Q1, Q2 in
In the embodiment of
A relatively large leakage inductance for the main power transformer T1 is required to control the shoot-through current through S1 and the SRs Q1 and Q2 when they are both on as the transformer is energized by Q10 or Q11, until one of the SRs turns off (t2 or t4). At the instance Q10 or Q11 turns on (t2 or t4), Q1 and Q2 are on which creates the shoot through condition or a short across S1 and Llkg1 and Llkg2. There must be enough leakage inductance associated with S1 to allow S2 to develop full voltage to turn off Q1 or Q2 before excessive current develops in S1/P1. This leakage inductance (Llkg1 and Llkg2), however, stores a significant amount of energy (0.5*LlkgIo2) that must be controlled (i.e., either dissipated or recirculated) during each switching cycle. Otherwise, the energy in the leakage inductance will cause large voltage spikes at the drain terminals (Dr) of the SRs Q1, Q2 at turn on of the SRs (in embodiments where the SRs Q1, Q2 are MOSFETs).
The snubber circuit 20 shown in
The bulk capacitor Cb is connected, in various embodiments, to the source terminal of a normally-on switch Q3. The switch Q3 may be implemented as a p-channel MOSFET that is on when the gate-to-source voltage is below the threshold voltage and off when the gate-to-source voltage exceeds the threshold. The drain terminal of switch Q3 is connected to an inductor L3, which is connected to the output of the converter 10. The inductor L3 preferably includes two magnetically coupled windings (L3a and L3b), as shown in
The gate (i.e., control) terminal of the switch Q3 is controlled by the drains Dr of the SRs Q1, Q2, via RC circuits. That is, the drain of SR Q1 is coupled to the gate of switch Q3 via resistor R2 and capacitor C2, and the drain of SR Q2 is coupled to the gate of switch Q3 via resistor R1 and capacitor C1. Accordingly, when the SRs Q1, Q2 are both on, the drain voltages of the SRs Q1, Q2 are low such that the p-channel switch Q3 is on due to the low voltage at the gate terminal, as shown in
As mentioned above, winding L3b may have more windings than L3a so that there will be enough time to discharge the energy in L3 in the discharge portion of the L3 cycle, as shown in
As shown in
As used herein, the term “on” when used in reference to the state of a transistor means that the transistor is in a low impedance state, and the term “off” when used in reference to the state of a transistor means that the transistor is in a high impedance state. Also, the term “connected” as used herein does not necessarily mean directly connected, unless so noted.
In
Although the present invention has been described herein with respect to certain embodiments, those of ordinary skill in the art will recognize that many modifications and variations of the present invention may be implemented. For example, there may be additional windings magnetically coupled to the main power transformer T1. Also, any of the semiconductor switches described herein may be implemented as a single semiconductor switch or a number of semiconductor switches connected in parallel. The foregoing description and the following claims are intended to cover all such modifications and variations.
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