Claims
- 1. A method for producing a high efficiency light emitting device comprising:
forming a lower confining layer of an AlGaInP alloy of a first conductivity type overlying a semiconductor substrate of the first conductivity type; selecting a thickness of an active region of AlGaInP to have an absorbance less than 0.2; forming said active region overlying said lower confining layer; forming an upper confining layer of an AlGaInP alloy of a second conductivity type overlying said active region; and selecting the absorbance of all device layers which absorb light emitted by the active layer overlying said substrate such that the absorbance of said active region is at least one fifth of the total absorbance of said device layers.
- 2. The method of claim 1, further comprising adding a semiconductor window layer overlying the upper confining layer, wherein said window layer is transparent to light emitted by said active region.
- 3. The method of claim 1, further comprising forming a set-back layer of an alloy of AlGaInP interposing the active region and one of the lower and upper confining layers; wherein the alloy composition of the set-back layer is (AlxGa1−x)yIn1−yP, where x≧0.55 and 0≦y≦1.
- 4. The method of claim 3, further comprising doping the upper confining layer with oxygen, wherein the concentration of the oxygen is greater than 1017 cm−3 and less than 5×1018 cm−3.
- 5. The method of claim 4, further comprising:
positioning the set-back layer between the active region and the upper confining layer; and doping the set-back layer with oxygen, wherein the oxygen concentration is greater than 1015 cm−3 and less than 5×1016 cm−3.
- 6. The method of claim 3, wherein forming said active region comprises:
forming j active layers of an alloy of AlGaInP that emits light; and forming j-1 barrier layers that are transparent to the light emitted by the active layers, each barrier layer interposing two active layers.
- 7. The method of claim 1, wherein forming said active region comprises:
forming j active layers of an alloy of AlGaInP that emits light; and forming j-1 barrier layers that are transparent to the light emitted by the active layers, each barrier layer interposing two active layers.
- 8. The method of claim 1, wherein the semiconductor substrate is transparent.
- 9. The method of claim 8, wherein:
said forming an upper confining layer of an AlGaInP alloy of a second conductivity type overlying said active region comprises forming said upper confining layer to have p-type conductivity; and forming said active region further comprises forming said active region containing a p-type dopant concentration in excess of 1017 cm−3 and less than 1019 cm−3.
- 10. The method of claim 8, further comprising:
forming a set-back layer of an alloy of AlGaInP interposing the active region and one of the lower and upper confining layers, wherein the alloy composition of the set-back layer is (AlxGa1−x)yIn1−yP, where x≧0.55 and 0≦y-≦1.
- 11. The method of claim 10, wherein forming said active region comprises:
forming j active layers of an alloy of AlGalnP that emits light; and forming j-1 barrier layers that are transparent to light emitted by the active layers, each barrier layer interposing two adjacent active layers.
- 12. The method of claim 11, wherein forming said active region comprises:
forming an active region operative to emit a wavelength less than 600 nm; and forming said active region such that the total thickness of the active layers is between 1000 and 2500Å.
- 13. The method of claim 11, wherein forming said active region comprises:
forming an active region operative to emit a wavelength between 600 and 620 nm; and forming an active region such that the total thickness of the active layers is between 500 to 2500Å.
- 14. The method of claim 11, wherein forming said active region comprises:
forming an active region operative to emit a wavelength greater than 620 nm; and forming an active regions such that the total thickness of the active layers is between 200Å and 1500Å.
- 15. The method of claim 10, further comprising doping the upper confining layer with oxygen, wherein the concentration of the oxygen is greater than 1017 cm−3 and less than 5×1018 cm−3.
- 16. The method of claim 15, further comprising;
positioning the set-back layer between the active region and the upper confining layer; and doping the set-back layer with oxygen, wherein the concentration of oxygen exceeds 1015 cm−3 and is less than 5×1016 cm−3.
- 17. The method of claim 8, wherein forming said active region comprises:
forming an active region including j active layers of an alloy of AlGaInP that emits light; and forming j-1 barrier layers that are transparent to the light emitted by the active layers, each barrier layer interposing two active layers.
- 18. The method of claim 8, wherein forming said active region comprises:
forming the active region operative to emit a wavelength less than 600 nm; and forming said active region such that the total thickness of the active layers is between 1000Å and 2500Å.
- 19. The method of claim 8, wherein forming the active region comprises:
forming the active region operative to emit a wavelength between 600 and 620 nm; and forming said active region such that the total thickness of the active layers is between 500Å and 2500Å.
- 20. The method of claim 8, wherein forming said active region comprises:
forming the active region operative to emit a wavelength greater than 620 nm; and forming said active region such that the total thickness of the active layers is between 200Å and 1500Å.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of application Ser. No. 09/122,568, filed Jul. 24, 1998, incorporated herein by reference in its entirety.
Continuations (1)
|
Number |
Date |
Country |
Parent |
09122568 |
Jul 1998 |
US |
Child |
10011521 |
Nov 2001 |
US |