Claims
- 1. A photoconductive thyristor comprising:
- a semi-insulating substrate made of a III-V semiconducting material, the substrate having a top and bottom surface;
- a layer of n doped semiconductor material grown on the top surface of the substrate;
- a layer of p+ doped semiconductor material grown on the n doped layer;
- a first layer of semiconductor grown at a low temperature on the p+ doped layer for passivation;
- a layer of p doped semiconductor material grown on the bottom surface of the substrate;
- a layer of n+ doped semiconductor material grown on the p doped layer;
- a second layer of semiconductor grown at a low temperature on the n+ doped layer for passivation; and
- at least a first ohmic contact etched within the first layer of semiconductor grown at low temperature; and
- at least a second ohmic contact etched within the second layer of semiconductor grown at low temperature;
- wherein the n, p+, p and n+ layers all have a wider energy band gap than the substrate and wherein the low temperature semiconductor layers have approximately the same energy band gap as the substrate.
- 2. The thyristor of claim 1 wherein the substrate is made of gallium arsenide and the n, p+, p and n+ layers all made of aluminum gallium arsenide.
- 3. The thyristor of claim 1 wherein the n and n+ layers are doped with silicon and the p and p+ layers are doped with beryllium.
GOVERNMENT INTEREST
The invention described herein may be manufactured, used, sold, and/or licensed by, or on behalf of, the United States of America without the payment to us of any royalty thereon.
US Referenced Citations (5)