Alkaline solutions for post CMP cleaning processes

Abstract

Alkaline post CMP cleaning solutions are provided including at least two basic compounds that can be organic amines and/or quaternary ammonium hydroxides, at least one organic acid compound, and an inhibitor compound that inhibits corrosion of materials. The inhibitor compound is preferably a mercaptan compound. In one embodiment, a cleaning solution includes at least two organic amines but is substantially free of quaternary ammonium hydroxides. The cleaning solutions preferably have a pH ranging from about 7 to about 12.

Description

Claims

1. A cleaning solution comprising: at least two basic compounds selected from the group consisting of organic amines and quaternary ammonium hydroxides;at least one organic acid compound; anda mercaptan compound.

2. The solution of claim 1, wherein the pH of the solution is in the range from about 7 to about 12.

3. The solution of claim 1, wherein the at least two basic compounds include an organic amine and tetramethyl ammonium hydroxide.

4. The solution of claim 1, wherein the mercaptan compound comprises a mercapto carboxylic acid.

5. The solution of claim 4, wherein the mercaptan compound comprises at least one of mercaptopropionic acid and cysteine.

6. The solution of claim 1, wherein the solution has a suitable composition such that, upon about 50 times to about 100 times dilution with deionized water, the diluted solution has a composition that includes about 0.05% to about 0.2% by weight of the at least two basic compounds in the diluted solution, about 0.002% to about 0.1% by weight of the at least one organic acid in the diluted solution, and about 0.004% to about 0.1% by weight of the mercaptan compound in the diluted solution.

7. The solution of claim 1, wherein the solution includes tetramethyl ammonium hydroxide, isopropanolamine, salicylic acid and mercaptopropionic acid.

8. The solution of claim 1, wherein the solution is substantially free of quaternary ammonium hydroxide compounds.

9. The solution of claim 1, wherein the at least one organic acid compound is a complexing agent for copper.

10. A cleaning solution comprising: at least two organic amine compounds;at least one organic acid compound; andan inhibitor compound that inhibits corrosion of metals;wherein the solution is substantially free of quaternary ammonium hydroxide compounds.

11. The solution of claim 10, wherein the inhibitor compound comprises an antioxidant that inhibits or prevents the oxidation of copper.

12. The solution of claim 10, wherein the inhibitor compound comprises a mercaptan compound.

13. The solution of claim 10, wherein the solution includes isopropanolamine, (aminoethylamino)ethanol, ascorbic acid and salicylic acid.

14. The solution of claim 10, wherein the pH of the solution is in the range from about 7 to about 11.

15. The solution of claim 10, wherein the pH of the solution is in the range from about 9 to about 10.5.

16. The solution of claim 10, wherein the at least one organic acid compound is a complexing agent for copper.

17. A method of cleaning a semiconductor component, the method comprising: providing a cleaning solution comprising at least two basic compounds selected from the group consisting of organic amines and quaternary ammonium hydroxides, at least one organic acid compound, and a mercaptan compound; andcontacting a surface of the semiconductor component with the cleaning solution.

18. The method of claim 17, wherein the pH of the cleaning solution is in the range from about 7 to about 12.

19. The method of claim 17, wherein the at least two organic base compounds include an organic amine and tetramethyl ammonium hydroxide.

20. The method of claim 17, wherein the mercaptan compound comprises a mercapto carboxylic acid.

21. The method of claim 20, wherein the mercaptan compound comprises at least one of mercaptopropionic acid and cysteine.

22. The method of claim 17, further comprising: prior to contacting the surface of the semiconductor component with the cleaning solution, diluting the cleaning solution from about 50 times to about 100 time with deionized water such that the diluted cleaning solution includes about 0.05% to about 0.2% by weight of the at least two basic compounds in the diluted solution, about 0.002% to about 0.1% by weight of the at least one organic acid in the diluted solution, and about 0.004% to about 0.1% by weight of the mercaptan compound in the diluted solution.

23. The method of claim 17, wherein the solution includes tetramethyl ammonium hydroxide, isopropanolamine, salicylic acid and mercaptopropionic acid.

24. The method of claim 17, wherein the solution is substantially free of ammonium hydroxide compounds.

25. The method of claim 17, wherein the at least one organic acid compound is a complexing agent for copper.

26. A method of cleaning a semiconductor component, the method comprising: providing a cleaning solution comprising at least two organic amine compounds, at least one organic acid compound, and an inhibitor compound that inhibits corrosion of metals, wherein the cleaning solution is substantially free of ammonium hydroxide compounds; andcontacting a surface of the semiconductor component with the cleaning solution.

27. The method of claim 26, wherein the inhibitor compound comprises a mercaptan compound.

28. The method of claim 26, wherein the inhibitor compound comprises an antioxidant that inhibits or prevents the oxidation of copper.

29. The method of claim 26, wherein the cleaning solution includes isopropanolamine, (aminoethylamino)ethanol, ascorbic acid and salicylic acid.

30. The method of claim 26, wherein the pH of the cleaning solution is in the range from about 7 to about 11.

31. The method of claim 26, wherein the at least one organic acid compound is a complexing agent for copper.