Alternating current converter

Abstract

Voltage booster converter comprising a pair of input terminals A and B for connecting a DC input voltage Vin between these two terminals; a pair P0 of switches SB, SH in series connected by the switch SB to the input terminal B, the input terminal A being connected across an input inductor Lin to the connection point between the two switches SB and SH in series, each switch SB, SH comprising a control input so as to be placed simultaneously, one in an on state the other in an isolated state; a pair of output terminals C and D, for powering, by an output voltage Vout, a load Rout, the output terminal D being connected to the input terminal B; K other additional pairs P1, P2, . . . Pi, . . . PK-1, PK of switches in series between the output terminal C and the free side of the switch SH with i=1, 2, . . . K−1, K, the two switches of one and the same additional pair Pi being connected across an energy recovery inductor Lr1; K input groups, Gin1, Gin2, . . . Gini, . . . GinK-1, GinK, of Ni capacitors C of like value each in series, with i=1, 2, . . . K−1, K and Ni=i; K output groups, Gout1, Gout2, . . . Gouti, . . . GoutK-1, GoutK, of Mi capacitors C of like value each in series, with i=1, 2, . . . K and Mi=(K+1)−i. The switches of these other K additional pairs are controlled simultaneously by the first and second complementary control signals.

Description

FIELD OF THE INVENTION

The invention relates to a voltage booster converter, or “boost converter”, making it possible to obtain from a DC input voltage a DC output voltage of higher value than the supply voltage.

BACKGROUND OF THE INVENTION

In order to power certain electronic devices, in particular those intended for aeronautics, it sometimes proves to be necessary to generate electric voltages of high level, from a low-voltage common supply generator. The “boost converters” used for this purpose are chopper converters that are nonisolated so as to retain high efficiencies and small dimensions.

FIG. 1 a shows a basic diagram of a voltage booster converter of the prior art.

The circuit of FIG. 1a is powered, via two input terminals A and B, by a generator E of DC input voltage Vin and provides a DC output voltage Vout on a load Rout in parallel with a capacitor Cout. The positive pole of the generator E is connected, across an inductor Lin and a diode Dd, to a terminal C of the resistor Rout in parallel with the capacitor Cout, the other terminal D of the resistor Rout being connected to the negative pole of the generator E. A switch Int connected, on the one hand, to the connection point of the inductor Lin and the diode Dd, and, on the other hand, to the negative pole of the generator E, periodically places the inductor Lin in parallel with the generator E.

The switch Int is turned on for the time Ton and open for the time Toff. The diode Dd is conducting for the time Toff and open for the time Ton. We refer to α=Ton/(Ton+Toff) as the duty ratio.

FIG. 1 b shows the control signal of the switch Int of the “boost converter”.

When Int is closed, for the time Ton, the inductor Lin sees at its terminals the voltage Vin of the generator E. The current ILin in this inductor increases by the value: ΔILin_Ton=Vin·Ton/Lin

When the switch Int is open and the diode Dd conducts, that is to say for the time Toff, the inductor Lin sees at its terminals the difference between the input voltage Vin and the output voltage Vout. The current ILin in this inductor therefore decreases by the value: ΔILin_Toff=((Vin−Vout)·Toff)/Lin

The equilibrium state is attained when the sum of these two variations is zero, i.e.: ((Vin−Vout)·Toff)/Lin+Vin·Ton/Lin=0

which leads to the expression for the equilibrium voltage: Vout=Vin/(1−α)

α lying between 0 and 1, the output voltage Vout is therefore higher than the input voltage Vin, the structure of FIG. 1a is that of a voltage booster.

FIG. 1 c shows the current in the “boost converter” of FIG. 1a.

In practice, the switch Int may advantageously be embodied by semiconductors. Mention may be made, in a nonlimiting manner, of MOS and bipolar transistors, IGBTs or MCTs.

The voltage booster converters of the prior art comprise limitations. Specifically, it is difficult to obtain voltage ratios Vout/Vin of greater than 5 while retaining optimal converter efficiency. Specifically, the switch is subjected at one and the same time to very large currents and high voltages.

Other nonisolated structures may be used. Mention may for example be made of the autotransformer type boost converter or the placing of two boost converters in series. Unfortunately, none of these solutions exhibits the expected efficiency performance.

SUMMARY OF THE INVENTION

In order to alleviate the drawbacks of the voltage booster devices of the prior art, the invention proposes a voltage booster converter comprising:

a pair of input terminals A and B for connecting a DC input voltage Vin between these two terminals;

a pair P₀ of switches SB, SH in series connected by the switch SB to the input terminal B, the input terminal A being connected across an input inductor Lin to the connection point between the two switches SB and SH in series, each switch SB, SH comprising control means so as to be placed simultaneously, one in an on state the other in an isolated state;

a pair of output terminals C and D, for powering, by an output voltage Vout, a load Rout, the output terminal D being connected to the input terminal B, comprising:

K other additional pairs P₁, P₂, . . . P_i, . . . P_K-1, P_K of switches in series with the pair P₀ between the output terminal C and the switch SH with i=1, 2, . . . K−1, K, the two switches of one and the same additional pair P_i being connected across an energy recovery inductor Lr_i;

K input groups, Gin₁, Gin₂, . . . Gin_i, . . . Gin_K-1, Gin_K, of Ni capacitors C of like value each in series, with i=1, 2, . . . K−1, K and Ni=i, the electrode of the capacitors of one of the two ends of each input group being connected to the common point between the two switches SB, SH of the pair P₀, at least the electrode of the capacitors of each of the other ends of the input groups being connected respectively to the common point between each the switch SH_i and the recovery inductor Lr_i of the corresponding pair P_i of like rank i,

K output groups, Gout₁, Gout₂, . . . Gout_i, . . . Gout_K-1, Gout_K, of Mi capacitors C of like value each in series, with i=1, 2, . . . K and Mi=(K+1)−i, the electrode of the capacitors of one of the two ends of the output groups being connected to the output terminal C, at least the electrode of the capacitors of each of the other ends of the output groups being connected respectively to the connection point between two pairs of consecutive switches P_i-1 and P_i;

in that the switches of these other K additional pairs are controlled so as to form, when the switch SB of the pair P₀ linked to the terminal B is switched to the on state for a time Ton, a first capacitor network connected on the one hand across the switch SB to the terminal B and, on the other hand, to the terminal C, comprising the groups of input capacitors in series with the groups of the output capacitors such that a group of input capacitors Gin_i is in series with its respective group of output capacitors Gout_i,

and in that when the switch SB of the pair P₀ linked to the input terminal B is switched to the isolated state for a time Toff these other K pairs of switches form a second capacitor network connected to the terminal A across the input inductor Lin comprising the input group Gin_K in parallel with the output group Gout₁, in parallel with groups of input capacitors in series with groups of the output capacitors such that a group of input capacitors Gin_i-1 is situated in series with a group of output capacitors Gout_i.

The voltage Vout at the output of the converter is dependent on the duty ratio α=Ton/(Ton+Toff), the capacitors C of the networks having one and the same value, the voltage Vout is given by the relation: Vout=(Vin/(1−α))·(K+1).

The switches comprise a control input (control means) so as to be placed simultaneously, one in an on state through the application to its control input of a first control signal, the other in an isolated state by the application to its control input of a second control signal complementary to the first.

In practice, the switches may advantageously be embodied by semiconductors. Mention may be made, in a nonlimiting manner, of MOS and bipolar transistors, IGBTs or MCTs.

The converter furthermore comprises an output filtering capacitor Cout in parallel with the load Rout between the output terminals C and D.

In an embodiment of a booster converter, according to the invention, providing a positive output voltage Vout, the potential of the terminal A is greater than the potential of the terminal B, the potential of the output terminal C is greater than the potential of the output terminal D.

In another embodiment of a voltage booster converter, according to the invention, providing a negative voltage, the potential of the terminal A is less than the potential of the terminal B, the potential of the output terminal C is then less than the potential of the output terminal D.

BRIEF DESCRIPTION OF DRAWINGS

The invention will be better understood with the aid of exemplary embodiments according to the invention, with reference to the indexed drawings, in which:

FIG. 1 a, already described, shows a basic diagram of a voltage booster converter according to the prior art;

FIG. 1 b shows the control signal of the switch Int of the “boost converter” of FIG. 1a;

FIG. 1 c shows the current in the “boost converter” of FIG. 1a;

FIG. 2 shows the general structure of the converter according to the invention comprising K pairs of additional switches;

FIG. 3 a represents an exemplary embodiment of a voltage booster converter with two stages, according to the invention, without the recovery inductor;

FIG. 3 b shows the structure of a negative version of the converter of FIG. 3a;

FIG. 4 a shows a simplified structure of the voltage booster converter of FIG. 3a;

FIG. 4 b shows the structure of a negative version of the converter of FIG. 4a;

FIG. 5 a shows the voltage booster converter of FIG. 3a comprising an energy recovery inductor;

FIG. 5 b shows a first version of an impedance Z_i for enhancing the reliability of the converter according to the invention;

FIG. 5 c shows another impedance Z_i for enhancing the reliability of the converter according to the invention;

FIG. 5 d shows a simplified version of the voltage booster converter of FIG. 5a;

FIG. 6 shows an equivalent diagram of the converter of FIG. 5a according to the invention during the time Ton;

FIG. 6 a shows an equivalent diagram of the converter of FIG. 5d according to the invention during the time Ton;

FIG. 7 shows the control signals of the switches SB and SB1 of the converter of FIG. 5a;

FIG. 7 a shows the control signals of the switches SB of the converter of FIG. 5d;

FIG. 8 shows the variation of the current in the energy recovery inductor of the converter of FIG. 5a;

FIG. 8 a shows the variation of the current in the energy recovery inductor of the converter of FIG. 5d;

FIG. 9 represents the energy space of the recovery inductor Lr₁ and of the capacitor Ceq of FIG. 6;

FIG. 10 a represents a first practical structure of the converter according to the invention not comprising any interconnections between the capacitors of one and the same level of potential;

FIG. 10 b represents the negative version of the converter of FIG. 10a;

FIG. 11 represents another practical structure comprising interconnections between the capacitors of one and the same level of potential;

FIG. 12 represents the negative version of the converter of FIG. 11.

DETAILED DESCRIPTION OF EMBODIMENTS

FIG. 2 shows the general structure of the voltage booster converter according to the invention comprising K pairs of additional switches. The converter of FIG. 2 comprises, furthermore, an output filtering capacitor Cout in parallel with the load Rout between the output terminals C and D.

In the general structure of the “boost converter” of FIG. 2 according to the invention the voltages Vc across the terminals of the capacitors of the input groups Gin_i or of the output groups Gout_i have one and the same DC value, thus, the capacitors situated at one and the same level of potential may be linked together. It is thus possible simply to produce various structures of the voltage booster converter that we shall see subsequently.

FIG. 3 a represents an exemplary embodiment of a voltage booster converter with two stages (a single additional pair), according to the invention, without the recovery inductor, comprising two pairs of switches P₀ and P₁, each having two switches connected in series. The switches SB, SH for the pair P₀ and the switches SB₁, SH₁ for the additional pair P₁. Each switch of a pair comprises a control input so as to be placed simultaneously, the one in an on state by the application to its control input of a first control signal C1, the other in an isolated state by the application to its control input of a second control signal C2 complementary to the first.

FIG. 3 b represents the negative voltage version of the voltage booster converter with two stages of FIG. 3a. The converter of FIG. 3b, of the same structure as that of FIG. 3a, is powered by a generator E providing a negative potential Vin between the input terminals A and B. The polarity of the output capacitor Cout is then inverted.

FIG. 4 a shows a simplified structure of the booster converter of FIG. 3a comprising two pairs of switches. In this simplified structure, the switches SB₁, SH₁ of the pair P₁ are replaced by diodes DB₁, DH₁. The switch SH of the pair P₀ connected to the pair P₁ is also replaced by a diode DH, only the switch SB of the pair P₀ must be retained. The cathode of a diode of a pair (P₀) is connected to the anode of the diode of the next pair (P₁).

FIG. 4 b shows the simplified structure of the negative version of the booster converter of FIG. 3b. In this structure of FIG. 4b, the “mirror” of the structure of FIG. 4a, the anode of the diode of a pair (P₀) is connected to the cathode of the diode of the next pair (P₁). Just as for the negative voltage version of the converter of FIG. 3b the polarity of the output capacitor Cout is inverted.

FIG. 5 a shows the voltage booster converter of FIG. 3a comprising an energy recovery inductor Lr₁ allowing an improvement of the efficiency of the converter. The input capacitor is designated by Ce and the output capacitor by Cs.

We shall, subsequently, explain the manner of operation of the voltage booster converter of FIG. 5a according to the invention.

FIG. 6 shows an equivalent diagram of the converter of FIG. 5a according to the invention comprising the recovery inductor Lr₁, during the period Ton corresponding to the period of conduction of the switches of the two pairs SB and SB₁. During this time Ton the switches SB and SB₁ are closed, the switches SH and SH₁ are open, the output capacitor Cout is in parallel with the two capacitors Ce and Cs in series with the recovery inductor Lr₁.

The recovery inductor Lr₁ is sized so as to obtain a resonance of the oscillating circuit of FIG. 6 such that: $\mathrm{Ton}\ge \pi \sqrt{{\mathrm{Lr}}_1·\mathrm{Ceq}}$$\mathrm{with}$$\mathrm{Ceq}=\frac{1}{\frac{1}{\mathrm{Cout}}+\frac{1}{\mathrm{Ce}}+\frac{1}{\mathrm{Cs}}}$

For an optimal result, Ton is constant and equal to around half the period of the resonant frequency of the equivalent circuit of FIG. 6.

FIG. 6 a shows an equivalent diagram of the converter of FIG. 5d according to the invention during the time Ton.

In the case of FIG. 6a, the diode DB1 automatically opens the resonant circuit upon the zeroing of the current in the inductor Lr₁. In this case, it suffices for the following relation to be satisfied: Ton≧π√{square root over (Lr₁·Ceq)}

FIG. 7 shows the control signals of the switches SB and SB1 of the converter of FIG. 5a. The other switches are controlled in a complementary manner.

FIG. 8 shows the variation of the current ILr₁ in the energy recovery inductor Lr₁ as well as the sum of the voltages (Vce+Vcs) across the terminals of the respective input Ce and output Cs capacitors (converter of FIG. 5a).

At the time t1 when toggling from Toff to Ton, the current in the inductor is zero, the voltage (Vce+Vcs) across the terminals of the capacitors Ce and Cs is lower than the mean value of Vout and increases, passing through the mean value of Vout, the current in the inductor Lr₁ increases while storing up magnetic energy, passes through a maximum value when (Vce+Vcs) passes through the mean of Vout, then the current decreases down to a zero value, corresponding to the end of Ton, yielding the energy to the capacitors Ce and Cs. During Toff, the current in the inductor Lr1 remains zero, the sum of the voltages (Vce+Vcs) decreases since Ce and Cs are traversed by the current of the inductor Lin, then the cycle recommences at the start of Ton.

FIG. 7 a shows the control signals of the switches SB of the converter of FIG. 5d. FIG. 8a shows the variation of the current in the energy recovery inductor of the converter of FIG. 5d.

FIG. 9 represents the energy space of the recovery inductor Lr₁ and of the capacitor Ceq of the converter. The abscissa axis represents the capacitive energy Wc, the ordinate axis the inductive energy WLr₁, the energy variation between the inductor and the capacitors occurring in the time Ton. The energy is transferred from the capacitors to the recovery inductor then yielded to the capacitors.

The tuning of the circuit of the converter to the operating frequency with the recovery inductor Lr₁ considerably reduces the losses of rebalancing of charges in the capacitors Ce and Cs in the circuit of the “boost converter” according to the invention. These losses then become practically zero. This improvement of the converter of FIG. 3a with recovery inductors is applicable in the general case to K additional pairs of switches (see FIG. 2).

Furthermore, in order to make the booster converter according to the invention more reliable, the converter represented in FIG. 5d comprises in parallel with the recovery inductor Lr₁ in series with the switch SH₁ of the pair P₁ an impedance Z₁.

Specifically, in practice, Ton does not represent perfectly half the resonant period of the equivalent circuit of FIG. 6, the impedance Z₁ makes it possible to dissipate the residual current and protect the switches which are generally MOS transistors.

This improvement of the converter of FIG. 5a is applicable in the general case, thus each additional pair P_i of the converter according to the invention comprises in parallel with the recovery inductor Lr_i in series with the switch SH_i of the pair P_i an impedance Z_i.

FIG. 5 b shows a first version of the impedance Z_i for enhancing the reliability of the converter according to the invention. The impedance Z_i comprises a diode Ddz in series with a resistor r, the anode of the diode Ddz being linked, in the circuit of the converter, to the recovery inductor and in a second version, shown in FIG. 5c, another impedance Z_i comprises the diode Ddz in series with a Zener diode Dz, the two cathodes of the diode Dd and the Zener diode Dz being linked together, the anode of the diode Ddz being linked, in the circuit of the converter, to the recovery inductor.

Other types of impedance Z_i for dissipating the residual energy of the inductor Lr_i may of course be used, for example RC or RCD cells used conventionally in the field of power electronics.

FIG. 5 d shows a simplified version of the voltage booster converter of FIG. 5a comprising two pairs of switches P₀ and P₁ and a recovery inductor Lr₁. In this simplified structure, the switches SB₁ and SH₁ of the pair P₁ are replaced by diodes DB₁ and DH₁. The switch SH of the pair P₀ connected to the pair P₁ is also replaced by a diode DH, only the switch SB of the pair P₀ has to be retained, the cathode of a diode of a pair being connected to the anode of the diode of the next pair. As in the booster converter of FIG. 5a using switches, the two diodes of the pair P₁ are linked in series across a recovery inductor Lr₁.

The embodiment of the simplified voltage booster converter with diodes remains valid for any number of additional pairs, thus, in the general case, the switches SB_i and SH_i of the additional pairs P_i are replaced respectively by diodes DB_i and DH_i. The switch SH of the pair P₀ connected to the pair P₁ is a diode DH, only the switch SB of the pair P₀ has to be retained. The cathode of a diode of a pair P_i-1 being connected to the anode of the diode of the next pair P_i. As in the booster converter with switches of FIG. 5a, the two diodes of the pair P_i are linked in series across a recovery inductor Lr₁.

The explanation of the manner of operation of the series converter comprising the recovery inductor Lr₁ with two pairs (K=1) remains valid for any number of K additional pairs. Specifically, the currents in the various pairs P_i and in the corresponding recovery inductor Lr_i are the same, the number of elementary capacitors C in the groups placed in series by the switches being the same.

The voltage booster converter general structure represented in FIG. 2 makes it possible to simply embody various other practical structures and to determine directly the value of the capacitors in each input or output branch.

Specifically, as was stated previously, in the general structure of FIG. 2 comprising capacitors C of like value, the voltages Vc across the terminals of each of the capacitors are the same for the input groups and the same for the output groups, therefore, the capacitors of one and the same level of potential may be connected in part or in whole in parallel.

The capacitors of one and the same potential level Nin₁ are, for example, all those of the input groups Gin₁, Gin₂ . . . Gin_i, . . . Gin_K-1, Gin_K having an electrode connected to the common point between the two switches of the pair P₀, of a potential level Nin₂, all those connected by an electrode to the free electrodes of the capacitors of the level Nin₁ and by the other electrode to those of the next level Nin₃ and so on and so forth up to the level Nin_K.

Likewise, for the capacitors of the output groups, we shall have the level Nout₁ for all those of the output groups Gout₁, Gout₂, . . . Gout_i, . . . Gout_K-1, Gout_K having an electrode connected to the common point between the two pairs of switches P₀ and P₁, of a potential level Nout₂ all those connected by an electrode to the free electrodes of the capacitors of the level Nout₁ and by the other electrode to those of the next level Nout₃ and so on and so forth up to the level Nout_K.

The dotted lines in the diagram of FIG. 2 represent the possible connections between the capacitors C of like value.

FIG. 10 a represents a first practical structure of the converter according to the invention not comprising any interconnections between the capacitors of one and the same level of potential, each of the input Gin_i or output Gout_i groups respectively comprises a single capacitor Cea₁, Cea₂, . . . Cea_i . . . Cea_K, for the input groups Gin_i and Csa₁, Csa₂ . . . Csa₁ . . . Csa_K, for the output groups Gout_i.

The value of each of the input capacitors Cea_i is deduced simply from the general structure by calculating the resultant capacitance of the Ni=i capacitors C in series, with i=1, 2, . . . K, i being the order of the input group considered:

Cea1 = C   i = 1
Cea2 = C/2 i = 2
. . .
Ceai = C/i i
. . .
CeaK = C/K i = K

The value of each of these output capacitors Csa_i is deduced simply from the general structure by calculating the resultant capacitance of Mi=(K+1)−i capacitors C in series, i being the order of the output group considered:

Csa1 = C/K           i = 1
Csa2 = C/(K − 1)     i = 2
. . .
Csai = C/(K + 1) − i i
. . .
CsaK = C             i = K

FIG. 10 b represents the first practical structure of the converter of FIG. 10a in a negative version not comprising any interconnections between the capacitors of one and the same level of potential.

FIG. 11 represents another practical structure of the converter according to the invention, in a positive version, comprising interconnections between the capacitors of one and the same level Nv of potential (capacitors in parallel), the structure comprises a single input group Gin and a single output group Gout. The input capacitor Ceb_i, for each of the potential levels Nin_i, connected between the connection points of the switches of two consecutive pairs P_i, P_i-1, will be deduced simply by calculating the capacitor Ceb_i equivalent to the capacitors in parallel of the level Nin_i, of potential considered, i.e.:

Ceb1 = C.K             i = 1
Ceb2 = C.(K − 1)       i = 2
. . .
Cebi = C.((K + 1) − i) i
. . .
CebK = C               i = K

The output capacitor Csb_i of each of the levels of potential Nout_i, connected in parallel with its respective pair of switches P_i will be deduced simply by calculating the capacitor Csb_i equivalent to the capacitors in parallel of the level Nout_i considered, i being the order of the output level of potential considered, i.e.:

Csb1 = C               i = 1
Csb2 = C.2             i = 2
. . .
Csbi = C.((K + 1) − i) i
. . .
CsbK = C.K             i = K

FIG. 12 represents the voltage booster converter of FIG. 11, in a simplified negative voltage version, comprising interconnections between the capacitors of one and the same potential level Nv. In this simplified version, the switches SB_i and SH_i of the additional pairs P_i are replaced respectively by diodes DB_i and DH_i. The switch SH of the pair P₀ connected to the pair P₁ is a diode DH, only the switch SB of the pair P₀ has to be retained. The anode of a diode of a pair P_i-1 being connected to the cathode of the diode of the next pair P_i. The converter of FIG. 12, of the same structure as that of FIG. 11, is powered by a generator E providing a negative potential Vin between the input terminals A and B. The voltage Vout being negative, the polarity of the output capacitor Cout is then inverted.

In other embodiments it is of course possible to combine the two types of practical embodiments by placing capacitors in parallel for certain groups and in series for others.

It is also possible to embody conversion structures by combining several converters in parallel, be they positive and/or negative. The control signals of the converters of the conversion structure may then advantageously be out of phase so as to reduce the input and/or output current ripples of the booster converters.

The booster converter according to the invention makes it possible to obtain greater efficiencies than the voltage booster converters of the prior art with voltage ratios Vout/Vin of appreciably greater than five.

Claims

1. A voltage booster converter comprising: a pair of input terminals A and B for connecting a DC input voltage Vin between these two terminals; a pair P0 of switches SB, SH in series connected by the switch SB to the input terminal B, the input terminal A being connected across an input inductor Lin to the connection point between the two switches SB and SH in series, each switch SB, SH comprising control means so as to be placed simultaneously, one in an on state the other in an isolated state; a pair of output terminals C and D, for powering, by an output voltage Vout, a load Rout, the output terminal D being connected to the input terminal B, wherein: K other additional pairs P1, P2, . . . Pi, . . . PK-1, PK of switches in series with the pair P0 between the output terminal C and the switch SH with i=1, 2, . . . K−1, K, the two switches of one and the same additional pair Pi being connected across an energy recovery inductor Lri; K input groups, Gin1, Gin2, . . . Gini, . . . GinK-1, GinK, of Ni capacitors C of like value each in series, with i=1, 2, . . . K−1, K and Ni=i, the electrode of the capacitors of one of the two ends of each input group being connected to the common point between the two switches SB, SH of the pair P0, at least the electrode of the capacitors of each of the other ends of the input groups being connected respectively to the common point between each the switch SHi and the recovery inductor Lri of the corresponding pair Pi of like rank i, K output groups, Gout1, Gout2, . . . Gouti, . . . GoutK-1, GoutK, of Mi capacitors C of like value each in series, with i=1, 2, . . . K and Mi=(K+1)−i, the electrode of the capacitors of one of the two ends of the output groups being connected to the output terminal C, at least the electrode of the capacitors of each of the other ends of the output groups being connected respectively to the connection point between two pairs of consecutive switches Pi-1 and Pi; in that the switches of these other K additional pairs are controlled so as to form, when the switch SB of the pair P0 linked to the terminal B is switched to the on state for a time Ton, a first capacitor network connected on the one hand across the switch SB to the terminal B and, on the other hand, to the terminal C, comprising the groups of input capacitors in series with the groups of the output capacitors such that a group of input capacitors Gini is in series with its respective group of output capacitors Gouti, and in that when the switch SB of the pair P0 linked to the input terminal B is switched to the isolated state for a time Toff these other K pairs of switches form a second capacitor network connected to the terminal A across the input inductor Lin comprising the input group GinK in parallel with the output group Gout1, in parallel with groups of input capacitors in series with groups of the output capacitors such that a group of input capacitors Gini-1 is situated in series with a group of output capacitors Gouti.

2. The voltage booster converter as claimed in claim 1, wherein the voltage Vout at the output of the converter is dependent on the duty ratio α=Ton/(Ton+Toff), the capacitors C of the networks having one and the same value, the voltage Vout is given by the relation:

3. The voltage booster converter as claimed in claim 1 wherein it provides a positive output voltage Vout, the potential of the terminal A being greater than the potential of the terminal B, the potential of the output terminal C being greater than the potential of the output terminal D.

4. The voltage booster converter as claimed in claim 1 wherein the switches SBi and SHi of the additional pairs Pi are diodes DBi and DHi, and in that the switch SH of the pair P0 connected to the pair P1 is a diode DH, only the switch SB of the pair P0 being retained, the cathode of a diode of a pair Pi-1 being connected to the anode of the diode of the next pair Pi.

5. The voltage booster converter as claimed in claim 1 wherein a first impedance Zi having a diode Ddz in series with a resistor r, the anode of the diode Ddz being linked, in the circuit of the converter, to the recovery inductor Lri.

6. The voltage booster converter as claimed in claim 1 wherein another impedance Zi having a diode Ddz in series with a Zener diode Dz, the two cathodes of the diode Ddz and the Zener diode Dz being linked together, the anode of the diode Ddz being linked, in the circuit of the converter, to the recovery inductor.

7. The voltage booster converter as claimed in claim 1 wherein each of the input Gins or output Gouti groups respectively comprises a single capacitor Cea1, Cea2, . . . Ceai . . . CeaK for the input group Gini and Csa1, Csa2 . . . Csai . . . CsaK, for the output groups Gouti, and in that the value of each of the input capacitors Ceai is deduced from the general structure by calculating the resultant capacitance of the Ni=i capacitors C in series, with i=1, 2, . . . K, i being the order of the input group considered:

8. The voltage booster converter as claimed in claim 1 wherein interconnections between the capacitors of one and the same level Nv of potential, the structure having a single input group Gin and a single output group Gout, and in that the input capacitor Cebi, for each of the potential levels Nini, connected between the connection points of the switches of two consecutive pairs Pi, Pi-1, will be deduced simply by calculating the capacitor Cebi equivalent to the capacitors in parallel of the level Nini, of potential considered, i.e.:

9. The voltage booster converter as claimed in claim 1 wherein an output filtering capacitor Cout in parallel with the load Rout between the output terminals C and D.

10. The voltage booster converter as claimed in claim 1 wherein it provides a negative voltage, the potential of the terminal A being less than the potential of the terminal B, the potential of the output terminal C being less than the potential of the output terminal D.

11. The voltage booster converter as claimed in claim 1 wherein the switches are semiconductors comprising a control input (control means) so as to be placed simultaneously, one in an on state through the application to its control input of a first control signal, the other in an isolated state by the application to its control input of a second control signal complementary to the first.

12. A conversion structure wherein several positive and negative converters, according to claim 1, in parallel.

13. The conversion structure as claimed in claim 12, wherein the control signals of the converters of the conversion structure are out of phase so as to reduce the input and/or output current ripples of the booster converters.