Claims
- 1. A method of at least partly coating a sintered hard material body with a 0.5 to 20 .mu.m thick layer of a wear resistant alumina-containing layer including over 85% kappa Al.sub.2 O.sub.3 which is <80% thicker in edges than on a flat surface of the body by a deposition process comprising:
- coating at least pan of the body with the alumina-containing layer by contacting the body with a gas consisting essentially of an aluminum halide, a hydrolyzing, oxidizing or hydrolyzing and oxidizing agent, and an additional reactant selected from the group consisting of sulfur, phosphorus, selenium, tellurium, arsenic, antimony, bismuth, and compounds thereof, the coating being performed at a deposition temperature of from 800.degree. to 970.degree. C. and a volume concentration of the additional reactant being 0.40 to 3% of the total gas volume.
- 2. The method of claim 1, wherein the additional reactant is hydrogen sulfide.
- 3. The method of claim 1, wherein the deposition temperature is 870.degree.-930.degree. C. and the volume concentration of the additional reactant is 1.2%-2%.
- 4. The method of claim 1, wherein the alumina-containing layer includes over 90% kappa Al.sub.2 O.sub.3 and has a grain size (.phi.) in .mu.m for which:
- .phi..ltoreq.0.3x+a
- where
- x is the coating thickness in .mu.m and x=0.5 to 20 .mu.m
- a=2 for 4<x .ltoreq.20 .mu.m
- a=0 for 0.5.ltoreq.x.ltoreq.4 .mu.m.
- 5. The method of claim 1, further comprising coating the body with an innermost layer between the alumina-containing layer and the body, the innermost layer having a thickness of 0.5 to 10 .mu.m and comprising at least one member selected from the group consisting of carbides, nitrides, carbonitrides and oxycarbonitrides of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and B.
- 6. The method of claim 1, wherein the alumina-containing layer is at least 4 .mu.m thick.
- 7. The method of claim 1, wherein the alumina-containing layer is <30% thicker in the edges than on the flat surface.
- 8. The method of claim 1, wherein the alumina-containing layer consists essentially of 100% kappa-Al.sub.2 O.sub.3.
- 9. The method of claim 1, wherein the volume concentration of the additional reactant is 0.4 to 0.8% of the total gas volume.
- 10. The method of claim 1, wherein the deposition temperature is 850.degree. to 970.degree. C.
- 11. The method of claim 1, wherein the deposition temperature is 850.degree. to 970.degree. C. and the volume concentration of the additional reactant is 0.4-0.8%.
- 12. The method of claim 1, wherein the gas consists of CO.sub.2, AlCl.sub.3, H.sub.2 S, HCl and H.sub.2.
- 13. The method of claim 1, wherein the gas consists of CO.sub.2, AlCl.sub.3, H.sub.2 S and H.sub.2.
- 14. The method of claim 1, wherein the aluminum halide, the oxidizing agent and the additional reactant are successively introduced into a reactor containing the body.
- 15. The method of claim 1, wherein the gas consists of 5% CO.sub.2, 3% AlCl.sub.3, 0.4% H.sub.2 S, balance H.sub.2.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9101953 |
Jun 1991 |
SEX |
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Parent Case Info
This application is a divisional, of application Ser. No. 08/238,341, filed May 2, 1994, now abandoned, which is a continuation of application Ser. No. 07/902,721, filed Jun. 23, 1992, now abandoned.
US Referenced Citations (10)
Foreign Referenced Citations (3)
Number |
Date |
Country |
52-133782 |
Sep 1984 |
JPX |
1389140 |
Apr 1975 |
GBX |
2048960 |
Dec 1980 |
GBX |
Non-Patent Literature Citations (2)
Entry |
Patent Abstracts of Japan, abstract of JP 1-83662, published Mar. 29, 1989. |
V.J. Silvestri et al, "Properties of Al.sub.2 O.sub.3 Films Deposited from the AlCl.sub.3, CO.sub.2 and H.sub.2 System", Journal of the Electrochemical Society, vol. 125, No. 6, 1 Jun. 1978, pp. 902-907. |
Divisions (1)
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Number |
Date |
Country |
Parent |
238341 |
May 1994 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
902721 |
Jun 1992 |
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