Claims
- 1. A process for controlled atmosphere brazing comprising,
brazing an aluminum alloy without flux in a controlled atmosphere, using a filler alloy comprising,
a) 4-20 wt. % silicon; b) 0.0008-0.06 wt. % sodium; and c) the balance aluminum and incidental impurities.
- 2. The process for controlled atmosphere brazing of claim 1, wherein said filler alloy comprises 0.005-0.05 wt. % sodium.
- 3. The process for controlled atmosphere brazing of claim 2, wherein said filler alloy comprises 0.006-0.03 wt. % sodium.
- 4. The process for controlled atmosphere brazing of claim 1, wherein said filler alloy further comprises at least one element selected from the group comprising 0.0005-0.03 wt. % potassium and 0.03-0.133 wt. % bismuth.
- 5. The process for controlled atmosphere brazing of claim 4, wherein said filler alloy comprises both 0.0005-0.03 wt. % potassium and 0.03-0.133 wt. % bismuth.
- 6. The process for controlled atmosphere brazing of claim 4, wherein said filler alloy comprises 0.005-0.05 wt. % sodium.
- 7. The process for controlled atmosphere brazing of claim 6, wherein said filler alloy comprises 0.006-0.03 wt. % sodium.
- 8. The process for controlled atmosphere brazing of claim 4, wherein said filler alloy comprises 0.001-0.03 wt. % potassium.
- 9. The process for controlled atmosphere brazing of claim 4, wherein said filler alloy comprises 0.03-0.1 wt. % bismuth.
- 10. The process for controlled atmosphere brazing of claim 9, wherein said filler alloy comprises 0.03-0.08 wt. % bismuth.
- 11. The process for controlled atmosphere brazing of claim 1, further comprising, providing a core alloy upon which said filler alloy is clad.
- 12. The process for controlled atmosphere brazing of claim 11, wherein said core alloy is selected from the group consisting of 3XXX, 5XXX and 6XXX series alloys.
- 13. The process for controlled atmosphere brazing of claim 1, wherein said controlled atmosphere is a non-oxidizing gas.
- 14. The process for controlled atmosphere brazing of claim 13, wherein said non-oxidizing gas is nitrogen or argon.
- 15. The process for controlled atmosphere brazing of claim 13, wherein said non-oxidizing gas contains less than 100 ppm of oxygen.
- 16. The process for controlled atmosphere brazing of claim 1, wherein said incidental impurities include no more than 0.1 wt % magnesium and not more than 1.5 wt % manganese.
- 17. The process of claim 1, further including the steps of providing an aluminum article to be brazed and cleaning said article with a caustic NaOh containing cleaner prior to brazing said aluminum article with said filler alloy.
- 18. An aluminum filler alloy comprising,
a) 4-20 wt. % silicon; b) 0.0008-0.06 wt. % sodium, and c) the balance aluminum and incidental impurities.
- 19. The aluminum filler alloy of claim 18, wherein said alloy comprises 0.005-0.05 wt. % sodium.
- 20. The aluminum filler alloy of claim 19, wherein said alloy comprises 0.006-0.03 wt. % sodium.
- 21. The aluminum filler alloy of claim 18, wherein said alloy further comprises at least one element selected from the group comprising 0.0005-0.03 wt. % potassium and 0.03-0.133 wt. % bismuth.
- 22. The aluminum filler alloy of claim 21, wherein said alloy comprises 0.005-0.05 wt. % sodium.
- 23. The aluminum filler alloy of claim 22, wherein said alloy comprises 0.006-0.03 wt. % sodium.
- 24. The aluminum filler alloy of claim 21, wherein said alloy comprises both 0.0005-0.03 wt. % potassium and 0.03-0.133 wt. % bismuth.
- 25. The aluminum filler alloy of claim 21, wherein said alloy comprises 0.001-0.03 wt. % potassium.
- 26. The aluminum filler alloy of claim 21, wherein said alloy comprises 0.03-0.1 wt. % bismuth.
- 27. The aluminum filler alloy of claim 26, wherein said alloy comprises 0.03-0.08 wt. % bismuth.
- 28. The aluminum filler alloy of claim 18, wherein said incidental impurities include not more than 0.1 wt % magnesium and not more than 1.5 wt % manganese.
PRIORITY CLAIM UNDER 35 U.S.C. §119(e)
[0001] The present application claims benefit under 35 U.S.C. §119(e) of U.S. Provisional Application 60/213,274 filed Jun. 22, 2000.
Provisional Applications (1)
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Number |
Date |
Country |
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60213274 |
Jun 2000 |
US |