Ambient infrared detection in solid state sensors

Abstract

A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a cross-sectional view of one embodiment of a portion of an image sensor.

FIG. 2 shows a top view of one embodiment of an image sensor.

FIG. 3 shows a top view of the image sensor that is beneath the infrared filter.

FIG. 4 shows a flowchart of one embodiment of an IR sensing method.

FIG. 5 shows a flowchart of one embodiment for determining IR_avg.

FIG. 6 shows a block diagram of one embodiment of an imaging system of the present invention.

FIG. 7 shows a graph of pixel response for the IR-sensitive and IR-shielded pixels of an image sensor.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference is made to the accompanying drawings that form a part hereof and in which is shown, by way of illustration, specific embodiments in which the invention may be practiced. In the drawings, like numerals describe substantially similar components throughout the several views. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims and equivalents thereof.

FIG. 1 illustrates a cross-sectional view of one embodiment of an image sensor. For purposes of clarity, not all of the layers are shown in this figure. For example, there may be metal interconnect layers formed between the layers shown as well as dielectric layers for insulation purposes.

The sensor is comprised of a substrate 130 that incorporates a plurality of pixels or photodiodes 101-104. The photodiodes 101-104 are responsible for converting light into an electrical signal for use by the circuitry that reads the photodiode information. The higher the intensity of the light that strikes the photodiode 101-104, the greater the charge collected.

Optionally, a color filter array (CFA) 112 is positioned over the photodiodes 101-104. This layer comprises the different color filters required for the color system that is used. For example, the filters may be red 107, green 106, and blue 108 for an additive RGB system or cyan, yellow, magenta, and an extra green for a subtractive CYMG system. Each filter color separates out that particular color for that photodiode. In one embodiment, the color filters are formed in a “Bayer” color filter pattern that is well known in the art.

An IR cutoff filter 120 is positioned over the CFA 112. This filter blocks IR light from reaching certain ones of the photodiodes 101-104 such that only visible light reaches the desired photodiodes 101-104. A top view of the embodiments of the IR cutoff filter 120 of the present invention are illustrated in FIGS. 2 and 3 that are described subsequently.

A lens 113 is positioned over the IR cutoff filter 120. The lens 113 is responsible for focusing light on the photodiodes 101-104.

Optionally, a plurality of micro-lenses 150 can be formed over the photodiodes 101-104. Each micro-lens 150 can be formed over a corresponding photodiode 101-103. Each micro-lens 150 focuses the incoming light rays onto its respective photodiode 101-104 in order to increase the light gathering efficiency of the photodiode 101-104.

FIG. 2 illustrates a top view of one embodiment of the IR cutoff filter 203 over an image sensor. In this embodiment, the IR filter 203 is deposited directly on the sensor 200 or its protective cover in a patterned fashion. The active array pixel filter 203 blocks IR from reaching the active pixel array under the filter 203. A slot 205 is formed in the periphery of the filter 203 over the array to allow IR to reach the pixels under the slot 205. Optically “black” IR-sensitive (OBIR) pixels 300 as shown in FIG. 3 are formed around the periphery of the sensor 200. The OBIR pixels 300 are covered with a filter that blocks all visible wavelengths of light from hitting the pixels but is transparent to IR illumination.

The slot 205 of FIG. 2 is only one embodiment of the IR cutoff filter. The opening or openings in the IR filter can be of any shape that can be formed into the filter, thus exposing a predetermined quantity of pixels to IR illumination. For example, a slot can be positioned along only one side of the sensor.

FIG. 3 illustrates the composition of the sensor pixel array lying directly beneath the IR filter. This figure shows the regular active array of pixels 301 that is covered by an IR cutoff filter. This array 301 is surrounded by a ring of OBIR pixels 300 that must be under the opening in the IR filter. The OBIR pixels 300 are separated from the active pixel array 301 by a ring of barrier pixels 305. The barrier pixels 305 shield the active pixel array 301 from IR leaking into periphery active pixels in the active array 301 due to the long wavelength of IR. The barrier pixels 305 may be shielded from both visible and IR illumination (using a metal layer) and also act to substantially stop any charge leakage from the OBIR pixels 300 into the active pixels 301. This avoids contaminating the response of active pixels by IR generated charge.

The OBIR pixels 300 are the same type of pixels that are illustrated in FIG. 1 but are not covered by the IR cutoff filter as is the active array of pixels 301. This allows the OBIR pixels 300 to receive IR illumination.

FIG. 3 also includes optically and IR black (OIRB) pixels 303 that are shielded from all light, both visible and IR. This can be accomplished by a metal layer. These pixels 303 may or may not be under the slot in the IR filter. The active pixel array 301 is covered with the patterned array of color filters (e.g., Bayer CFA).

FIG. 4 illustrates a flowchart of one embodiment of a method for IR detection in accordance with the image sensors of FIGS. 2 and 3. This method reads the light signal from the OBIR pixels 401. These signals are averaged and normalized by analog gain 403 to obtain IR_avg as described later with reference to FIG. 5.

After the averaging and normalization of the OBIR signals 403, the light signals from the active pixels adjacent to the IR slot shown in FIG. 3 are analyzed 405. These signals are averaged and normalized 407 by analog gains to generate G_avg. G_avg is then used to calculate the ratio 409 of G_avg/IR_avg.

Averaging the signals is accomplished by the equation:

G _avg=(avg(P_ijgreen1)/GainG1+avg(P_ijgreen2)/GainG2)/2/T_{int activepixels}  (1)

where ‘P_ij green1’ is a light signal from a pixel located in row i and column j in the sensor array, covered by a green CFA filter and located in such rows i that contain pixels covered with green and red CFA filters, ‘P_ij green2’ is a light signal from a pixel located in row i and column j in the sensor array, covered by a green CFA filter and located in such rows i that contain pixels covered with green and blue CFA filters, ‘GainG1’ is the gain applied to the green1 pixels, ‘GainG2’ is the gain applied to the green2 pixels, and ‘T_{int activepixels}’ is the integration time the active pixels are receiving.

During a normalization process, GainR, GainB, GainG1, and GainG2 for the Bayer pattern are the four typical gains of an image sensor. The gains are applied to corresponding pixels in the Bayer pattern. Since OBIR pixels may only differ from regular pixels by having a black filter, the red, green1, green2, and blue pixel gains keep getting applied to OBIR pixels as well in order to simplify sensor design.

Referring again to FIG. 4, after the averaging and normalizing of the OBIR signals 403, the light signals from the active pixels adjacent to the IR slot shown in FIG. 3 are analyzed 405. These signals are then averaged and normalized 407 by analog gain to generate G_avg. IR_avg. is discussed subsequently with reference to FIG. 5. IR_avg. is then used to calculate the ratio 409 of G_avg/IR_avg. Alternate embodiments can calculate other ratios such as Y_avg/IR_avg where Y_avg is the average luminance of pixels after demosaicing and, optionally, color correction.

FIG. 5 illustrates a flowchart of one embodiment for determining IR_avg. The method begins with zeroing a row counter, r 501. The signals from the OBIR pixels are then read 503. These signals are used to determine four averages of P_ij from the OBIR pixels and are affected by Blue/Red/Green1/Green2 gain. These averages are denoted as IR_avgR, IR_avgB, IR_avgG.

IR_avgG, IR_avgB and IR_avgR are calculated as follows.

IR _avgG(r)=avg(avg(P_ijgreen1)/GainG1, avg(P_ijgreen2)/GainG2)/T_{int IR}  (2)

IR _avgR(r)=avg(P_ijred)/GainR/T_{int IR}  (3)

IR _avgB(r)=avg(P_ijblue)/GainB/T_{int IR}  (4)

where P_ij are OBIR pixels from the r^th inner pixel ring as detailed below. Tint IR is the integration time OBIR and OIRB pixels are receiving, which is typically equal to Tint active pixels. If pixel ring r contains no pixels of type green1 or green2, the corresponding term is excluded from the calculation of the average in (2).

These averages are compared to a saturation threshold 507, T_sat. This threshold is determined by the maximum pixel value D_max that can be read multiplied by a saturation constant, K_sat(i.e., T_sat=K_sat*D_max). For example, a maximum pixel value of 1023 multiplied by a constant of 18%. If ring r contains no pixels affected by the blue or red gains, the comparison for the average value of that type of pixel is not performed.

If none of the averages are less than T_sat 507, the pixels being considered are all close to IR saturation. Therefore, “more inner” OIRB pixels that are further from the OBIR pixels are then read 509. The “more inner” OIRB pixels are read by incrementing the row counter 511 and repeating the OBIR pixel read 503. This is repeated until non-saturated pixels are found. Since these pixels are shielded from visible and IR illumination, the signal generated by these pixels is due largely to charge and light leakage from adjacent OBIR pixels, see FIG. 7. Hence such signal may be substantially attenuated compared to OBIR pixel response thus allowing to assess IR illumination even when OBIR pixels are overexposed.

Charge leakage is the result of the fact that infrared photons are absorbed at a higher depth than the visual wavelength photons due to solid state sensor construction typically having a longer average travel distance before the infrared photo-generated carriers are collected. Thus, the infrared-generated carriers can leak under the optical shield of the OIRB pixels. The OIRB pixels collect the infrared-generated charge and their response is increased. Illumination free of infrared will have no effect on OIRB pixel response. The magnitude of that component can then be determined in comparison to the visible light illumination of the edge pixels.

OIRB pixels are particularly effective in cases where levels of IR radiation are so high as to saturate responses of OBIR pixels. For example, as the image sensor operates, the exposure for active pixels is typically selected to result in capture of visually pleasing images. Since OBIR pixels differ from active pixels only by having a different CFA filter, their exposure would typically be identical to that of the active pixels. This is true unless, optionally, the sensor is specifically designed to allow setting exposure of OBIR pixels independently from active pixels. In such an embodiment, the sensor would require a more complicated design.

When active pixels are exposed in a way optimal for image capture, OBIR pixel response can be saturated if the scene illuminant has a high IR content. In such case, values of OIRB pixels should be read out instead of OBIR.

After non-saturated pixels are found, the average of the averages that are less than the saturation threshold T_sat is determined 513. This is determined by the following equation where, typically, T_intR=T_{intactivepixels} and K_ir is an IR sensitivity coefficient:

IR _avg(r)=avg(IR_avgR(r), IR_avgB(r), IR_avgG(r))/K_ir(r)  (5)

In the formula above, if IR_avgR, IR_avgG, and/or IR_avgB are less than T_sat, or pixels of a certain type (e.g., affected by the blue or red gains) do not exist in ring r, these averages are excluded from the average.

If IR coefficient is set to 1 for OBIR, K_ir(0) is defined as 1 for OBIR pixels, K_ir(0)=1. K_ir for inner OIRB pixels is typically substantially less than 1. For example, the inner row of OIRB pixels could have K_ir(1)=0.05. The next row, K_ir(2) might have K_ir(2)=0.0025. The coefficient would get progressively smaller due to reduced sensitivity of inner OIRB pixels. K_ir(r) can be determined using a calibration procedure.

One such calibration procedure illuminates the sensor with IR that has spectra expected to be encountered in actual operation. A flat field is then imaged. The sensor exposure and gains are adjusted to make responses of OIRB pixels equal to a constant (e.g., T_sat). Exposure T_int(r) is recorded for r=0, as T_int(0). Gains are then frozen. For each inner ring of OIRB pixels, exposure is adjusted to make their responses equal to T_sat. The OIRB pixels probably saturate in this condition. T_int(r) is recorded for r=1, 2, etc. If K_ir(0)=1, K_ir(r)=T_int(0)/T_int(r).

The embodiment of the sensor of FIGS. 2 and 3 is optimized for use during manufacture of a sensor array. The opening in the IR cutoff filter can be added when the IR filter is formed over the sensor array.

The IR detection embodiments can also be used when a sensor array already has an IR cutoff filter covering the entire array of pixels. Such an IR detection embodiment relies on the fact that spectral transmittance of reflective IR-cutoff filters is highly angle dependent. Such filters allow a small amount of IR illumination through when illuminated at an angle other than perpendicular to the filter plane.

One problem solved by the present embodiments in IR sensing in using a visible light sensor is that the level of IR can substantially differ from the level of visible illumination, sometimes by many orders of magnitude. By using OBIR and OIRB pixels the IR is sensed in a high-dynamic-range fashion. The present embodiments require only a few changes to the sensor such as forming a black filter over some pixels, a metal layer over other pixels, and forming “barrier” pixels.

There are also alternative embodiments for IR sensing. For example, the exposure of IR pixels can be controlled independently from active pixels. In this embodiment, the exposure is varied to avoid overexposure of IR pixels and the OIRB pixels are optional.

In yet another embodiment, the method for IR sensing is similar to the embodiment of FIGS. 2-5 but not all of the OIRB pixels are shielded completely. The pixels adjacent to the OIRB pixels have a certain area (e.g., 50%) covered by metal. The next inner row is covered by metal to a greater extent (e.g., 75%) and the next row is covered to an even greater amount (e.g., 100%).

In still another embodiment, the OIRB pixels are not used. In this embodiment, special high dynamic range pixels are used to sense IR.

FIG. 6 illustrates a block diagram of one embodiment of an imaging system of the present invention. The system comprises an image sensor 600 as described previously, coupled to a control circuit 601. This system can represent a camera or some other imaging device.

In one embodiment, the control circuit 601 is a processor, microprocessor, or other controller circuitry that reads and processes the image from the image sensor device 600. For example, the imaging system can be a digital camera in which the image sensor device 600 is exposed to an image for recording. The control circuitry 601 executes the above-described embodiments and reads the accumulated charges from the photodiodes of the image sensor device 600. The control circuitry 601 may then process this data into an image or simply store the data.

The data from the system can be output to other systems over an I/O circuit 603. The I/O circuit 603 may be a Universal Serial Bus (USB) or some other type of bus that can connect the imaging system to a computer or other system.

CONCLUSION

In summary, the embodiments discussed herein provide a way to measure the amount of infrared illumination that reaches an image sensor. Knowing the amount of infrared illumination is useful in automatic white balance algorithms. A large amount of infrared illumination informs the white balance algorithm that the scene is illuminated by an incandescent light source. The white balance algorithm can then shift the color temperature of the received image to adjust for the extra red color cast. A low amount of infrared informs the white balance algorithm that the camera is imaging a scene illuminated by a fluorescent light source, such as office lighting, and the color temperature of the received image must be shifted to remove a greenish cast. A moderate amount of infrared indicates that the camera is used outdoors in daylight conditions. In this condition, the white balance would typically remove a blue color cast from the image, if any.

Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement that is calculated to achieve the same purpose may be substituted for the specific embodiments shown. Many adaptations of the invention will be apparent to those of ordinary skill in the art. Accordingly, this application is intended to cover any adaptations or variations of the invention. It is manifestly intended that this invention be limited only by the following claims and equivalents thereof.

Claims

1. An image sensor device comprising: an array of pixels;an infrared filter substantially covering a first predetermined area of the array of pixels; andmeans for inhibiting visible light spectrum substantially covering a second predetermined area of the array of pixels wherein a third predetermined area of the array of pixels remains exposed to both visible and infrared illumination.

2. The device of claim 1 wherein the infrared filter reduces illumination of the predetermined area of the array of pixels in the infrared wavelength.

3. The device of claim 1 and further comprising a color filter array formed over the array of pixels.

4. The device of claim 3 wherein the color filter array is formed in a Bayer pattern.

5. The device of claim 1 wherein the means for inhibiting is a layer of metal.

6. The device of claim 1 wherein the means for inhibiting is a black color filter array.

7. The device of claim 1 wherein the third predetermined area substantially encircles the first predetermined area.

8. The device of claim 7 wherein the second predetermined area substantially encircles the third predetermined area.

9. An image sensor device comprising: a substrate comprising an array of photodiodes;a color filter array formed over the array of photodiodes such that a different color filter is formed over each photodiode;an infrared filter formed over a predetermined area of the array of photodiodes;an infrared barrier formed substantially around a periphery of the first predetermined area;a plurality of infrared photodiodes formed substantially around a periphery of the infrared barrier; anda plurality of black photodiodes formed substantially around a periphery of the plurality of infrared photodiodes.

10. The device of claim 9 wherein the substrate is comprised of p+ silicon and each photodiode is comprised of n− silicon.

11. The device of claim 9 wherein the substrate is comprised of n− silicon and each photodiode is comprised of p+ silicon.

12. The device of claim 9 wherein each of the plurality of infrared diodes comprises a color filter formed to selectively admit predetermined wavelengths of light to the photodiode and all of the plurality of infrared photodiodes is not blocked from exposure to and infrared wavelength of light.

13. The device of claim 12 wherein each of the plurality of black photodiodes comprises a filter that substantially inhibits admittance of all light wavelengths except infrared.

14. A method for detecting infrared light on a semiconductor image sensor having a plurality of optically black IR-sensitive pixels that are substantially adjacent to a matrix of active pixels shielded with an infrared filter, the matrix of active pixels having red, green, and blue pixels, the method comprising: reading first signals from the optically black IR-sensitive pixels;averaging and normalizing the first signals;reading second signals from the matrix of active pixels, the second signals being read from active pixels that are substantially adjacent to the optically black IR-sensitive pixels;averaging and normalizing the second signals; andgenerating a ratio of the averaged and normalized first signals to the average and normalized second signals.

15. The method of claim 14 wherein the second signals are averaged in response to an average of infrared received by the red pixels, an average of infrared received by the blue pixels, and an average of infrared received by the green pixels.

16. The method of claim 14 wherein the ratio is an indication of an amount of IR illumination on the image sensor.

17. A method for detecting infrared light on a semiconductor image sensor having an array of active pixels filtered by an infrared filter and an area of optically black infrared-sensitive pixels that are filtered against visible light, the method comprising: reading signals from the optically black infrared-sensitive pixels;determining if the optically black infrared-sensitive pixel signals indicate infrared illumination of the optically black infrared-sensitive pixels;if infrared illumination is present, comparing signals from adjacent active pixels that are adjacent to the area of optically black infrared-sensitive pixels to determine a level of infrared illumination on the image sensor.

18. The method of claim 17 wherein the area of black pixels substantially encircle a periphery of the array of active pixels.

19. The method of claim 17 wherein determining if the black pixel light signals indicate illumination includes: comparing the black pixel light signals to a predetermined threshold; andif the black pixel light signals are greater than the predetermined threshold, infrared illumination is present.

20. The method of claim 17 wherein a ratio of the light signals from the adjacent active pixels to the adjacent black pixels indicates an amount of infrared illumination on the image sensor.

21. A method for fabricating a solid state image sensor device, the method comprising: forming an array of photodiodes in a substrate;forming a color filter array over the array of photodiodes;forming an infrared filter over a first predetermine area of the array of photodiodes; andforming a black filter over a second predetermined area of the array of photodiodes such that a third predetermined area of the array of photodiodes is filtered only by the color filter array.

22. The method of claim 21 and further including forming an infrared barrier between the third predetermined area and the first predetermined area.

23. The method of claim 21 wherein the third predetermined area is formed substantially around a periphery of the first predetermined area and the second predetermined area is formed substantially around a periphery of the third predetermined area.

24. The method of claim 21 wherein forming the black filter comprises forming a layer of metal over the second predetermined area.

25. The method of claim 21 and further including forming a lens over the infrared filter.

26. An image system comprising: control circuitry that generates an image in response to pixel information; andan image sensor device, coupled to the control circuitry, for generating the pixel information in response to received light, the device comprising: an array of pixels;an infrared filter substantially covering a first predetermined area of the array of pixels; andmeans for inhibiting visible light spectrum substantially covering a second predetermined area of the array of pixels wherein a third predetermined area of the array of pixels remains exposed to both visible and infrared illumination.

27. The system of claim 26 wherein the image system is a digital camera.