The present invention relates to a display technology field, and more particularly to an AMOLED pixel driving circuit and a pixel driving method.
The Organic Light Emitting Display (OLED) possesses many outstanding properties of self-illumination, low driving voltage, high luminescence efficiency, short response time, high clarity and contrast, near 180° view angle, wide range of working temperature, applicability of flexible display and large scale full color display. The OLED is considered as the most potential display device.
The OLED can be categorized into two major types according to the driving ways, which are the Passive Matrix OLED (PMOLED) and the Active Matrix OLED (AMOLED), i.e. two types of the direct addressing and the Thin Film Transistor matrix addressing. The AMOLED comprises pixels arranged in array and belongs to active display type, which has high lighting efficiency and is generally utilized for the large scale display devices of high resolution.
The AMOLED is a current driving element. When the electrical current flows through the organic light emitting diode, the organic light emitting diode emits light, and the brightness is determined according to the current flowing through the organic light emitting diode itself. Generally, an AMOLED pixel driving circuit comprises two thin film transistors (TFT) and one capacitor, i.e. a 2T1C pixel driving circuit. The thin film transistor employed for controlling the writing of the data signal (Data) is a Switching TFT, and the thin film transistor employed for controlling the current flowing through the OLED is a Driving TFT. Therefore, the importance of the threshold voltage (Vth) of the driving TFT is obviously significant. Both the positive and negative drifts of the threshold voltage will make different current flowing through the OLED under the same data signal and the OLED will have different brightness.
At present, both the thin film transistors manufactured by Low Temperature Poly-silicon (LTPS) and oxide semiconductor will have the phenomenon of threshold voltage drift during usage. For example, the factors of the light irradiation, source-drain voltage stress and etc. can cause the threshold voltage drift and result in that the current flowing through the OLED is not consistent with the desired current. The panel brightness cannot satisfy the requirements, therefore. In the general 2T1C pixel driving circuit, the threshold voltage drift of the Driving TFT cannot be improved by adjustment. Thus, new thin film transistors or new signals are required to weaken or even eliminate the influence caused by the threshold voltage drift.
Please refer to
An objective of the present invention is to provide an AMOLED pixel driving circuit capable of compensating the threshold voltage of the drive thin film transistor and reducing the change of the current flowing through the organic light emitting diode along with the threshold voltage drift to enormously promote the stability of the current and make the panel brightness even. Moreover, the signal input of the capacitor end can be reduced to simplify the input signal for lowering the manufacture cost of the panel and raising the working efficiency of the circuit.
Another objective of the present invention is to provide an AMOLED pixel driving method capable of compensating the threshold voltage of the drive thin film transistor and reducing the change of the current flowing through the organic light emitting diode along with the threshold voltage drift to enormously promote the stability of the current and make the panel brightness even. Moreover, the signal input of the capacitor end can be reduced to simplify the input signal for lowering the manufacture cost of the panel and raising the working efficiency of the circuit.
For realizing the aforesaid objectives, the present invention provides an AMOLED pixel driving circuit, comprising: a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a capacitor and an organic light emitting diode;
a gate of the first thin film transistor is electrically coupled to a second reverse scan control signal, and a drain is electrically coupled to a power supply voltage, and a source is electrically coupled to a first node;
a gate of the second thin film transistor is electrically coupled to a first scan control signal, and a drain is electrically coupled to a second node, and a source is electrically coupled to the first node;
a gate of the third thin film transistor is electrically coupled to a first reverse scan control signal, and a drain is electrically coupled to an anode of the organic light emitting diode and a source is electrically coupled to a third node;
a gate of the fourth thin film transistor is electrically coupled to a second node and one end of the capacitor, and a drain is electrically coupled to the first node, and a source is electrically coupled to the third node and a drain of the fifth thin film transistor;
a gate of the fifth thin film transistor is electrically coupled to a second scan control signal, and a drain is electrically coupled to the third node and the source of the fourth thin film transistor, and a source is electrically coupled to a data signal;
one end of the capacitor is electrically coupled to the second node and the gate of the fourth thin film transistor, and the other end is electrically coupled to an earth;
the anode of the organic light emitting diode is electrically coupled to the drain of the third thin film transistor, and a cathode is electrically coupled to the earth;
the fourth thin film transistor is a drive thin film transistor; the AMOLED pixel driving circuit directly acquires a threshold voltage of the fourth thin film transistor to implement threshold voltage compensation, and acquirement of the threshold voltage and data signal read are accomplished at the same time.
All of the first thin film transistor, the second thin film transistor, the third thin film transistor, the fourth thin film transistor and the fifth thin film transistor are Low Temperature Poly-silicon thin film transistors, oxide semiconductor thin film transistors or amorphous silicon thin film transistors.
All of the first scan control signal, the first reverse scan control signal, the second scan control signal and the second reverse scan control signal are provided by an external sequence controller.
The first scan control signal, the first reverse scan control signal, the second scan control signal, the second reverse scan control signal and the data signal are combined with one another, and correspond to an initialization stage, a threshold voltage programming stage and a drive stage one after another;
in the threshold voltage programming stage, processes of the acquirement of the threshold voltage and the data signal read are accomplished at the same time.
In the initialization stage, the first scan control signal provides high voltage level, and the first reverse scan control signal provides low voltage level, and the second scan control signal provides low voltage level, and the second reverse scan control signal provides high voltage level, and the data signal provides low voltage level;
in the threshold voltage programming stage, the first scan control signal provides high voltage level, and the first reverse scan control signal provides low voltage level, and the second scan control signal provides high voltage level, and the second reverse scan control signal provides low voltage level, and the data signal provides high voltage level;
in the drive stage, the first scan control signal provides low voltage level, and the first reverse scan control signal provides high voltage level, and the second scan control signal provides low voltage level, and the second reverse scan control signal provides high voltage level, and the data signal provides low voltage level.
Or, in the initialization stage, the first scan control signal provides high voltage level, and the first reverse scan control signal provides high voltage level, and the second scan control signal provides low voltage level, and the second reverse scan control signal provides high voltage level, and the data signal provides low voltage level;
in the threshold voltage programming stage, the first scan control signal provides high voltage level, and the first reverse scan control signal provides low voltage level, and the second scan control signal provides high voltage level, and the second reverse scan control signal provides low voltage level, and the data signal provides high voltage level;
in the drive stage, the first scan control signal provides low voltage level, and the first reverse scan control signal provides high voltage level, and the second scan control signal provides low voltage level, and the second reverse scan control signal provides high voltage level, and the data signal provides low voltage level.
The first reverse scan control signal and the second reverse scan control signal are the same.
The present invention further provides an AMOLED pixel driving circuit, comprising: a first thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a capacitor and an organic light emitting diode;
a gate of the first thin film transistor is electrically coupled to a second reverse scan control signal, and a drain is electrically coupled to a power supply voltage, and a source is electrically coupled to a first node;
a gate of the second thin film transistor is electrically coupled to a first scan control signal, and a drain is electrically coupled to a second node, and a source is electrically coupled to the first node;
a gate of the third thin film transistor is electrically coupled to a first reverse scan control signal, and a drain is electrically coupled to an anode of the organic light emitting diode and a source is electrically coupled to a third node;
a gate of the fourth thin film transistor is electrically coupled to a second node and one end of the capacitor, and a drain is electrically coupled to the first node, and a source is electrically coupled to the third node and a drain of the fifth thin film transistor;
a gate of the fifth thin film transistor is electrically coupled to a second scan control signal, and a drain is electrically coupled to the third node and the source of the fourth thin film transistor, and a source is electrically coupled to a data signal;
one end of the capacitor is electrically coupled to the second node and the gate of the fourth thin film transistor, and the other end is electrically coupled to an earth;
the anode of the organic light emitting diode is electrically coupled to the drain of the third thin film transistor, and a cathode is electrically coupled to the earth;
the fourth thin film transistor is a drive thin film transistor; the AMOLED pixel driving circuit directly acquires a threshold voltage of the fourth thin film transistor to implement threshold voltage compensation, and acquirement of the threshold voltage and data signal read are accomplished at the same time;
wherein all of the first thin film transistor, the second thin film transistor, the third thin film transistor, the fourth thin film transistor and the fifth thin film transistor are Low Temperature Poly-silicon thin film transistors, oxide semiconductor thin film transistors or amorphous silicon thin film transistors;
wherein all of the first scan control signal, the first reverse scan control signal, the second scan control signal and the second reverse scan control signal are provided by an external sequence controller.
The present invention further provides an AMOLED pixel driving method, comprising steps of:
step 1, providing an AMOLED pixel driving circuit;
the AMOLED pixel driving circuit comprises: a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a capacitor and an organic light emitting diode;
a gate of the first thin film transistor is electrically coupled to a second reverse scan control signal, and a drain is electrically coupled to a power supply voltage, and a source is electrically coupled to a first node;
a gate of the second thin film transistor is electrically coupled to a first scan control signal, and a drain is electrically coupled to a second node, and a source is electrically coupled to the first node;
a gate of the third thin film transistor is electrically coupled to a first reverse scan control signal, and a drain is electrically coupled to an anode of the organic light emitting diode and a source is electrically coupled to a third node;
a gate of the fourth thin film transistor is electrically coupled to a second node and one end of the capacitor, and a drain is electrically coupled to the first node, and a source is electrically coupled to the third node and a drain of the fifth thin film transistor;
a gate of the fifth thin film transistor is electrically coupled to a second scan control signal, and a drain is electrically coupled to the third node and the source of the fourth thin film transistor, and a source is electrically coupled to a data signal;
one end of the capacitor is electrically coupled to the second node and the gate of the fourth thin film transistor, and the other end is electrically coupled to an earth;
the anode of the organic light emitting diode is electrically coupled to the drain of the third thin film transistor, and a cathode is electrically coupled to the earth;
the fourth thin film transistor is a drive thin film transistor;
step 2, entering an initialization stage;
the first scan control signal provides high voltage level, and the second scan control signal provides low voltage level, and the second reverse scan control signal provides high voltage level, and the data signal provides low voltage level; the first, the second thin film transistors are activated, and the fifth thin film transistor is deactivated, and the gate of the fourth thin film transistor and the power supply voltage are shorted to accomplish the initialization;
step 3, entering a threshold voltage programming stage;
the first scan control signal provides high voltage level, and the first reverse scan control signal provides low voltage level, and the second scan control signal provides high voltage level, and the second reverse scan control signal provides low voltage level, and the data signal provides high voltage level; the first, the third thin film transistors are deactivated, and the fifth, the second thin film transistors are activated, and the gate and the source of the fourth thin film transistor starts to discharge, and a gate voltage of the fourth thin film transistor is discharged from the power supply voltage to VData+Vth, wherein the VData is a voltage provided by the data signal, and Vth is a threshold voltage of the fourth thin film transistor, and the threshold voltage of the fourth thin film transistor and the voltage provided by the data signal are stored in the capacitor, and direct acquirement of the threshold voltage of the fourth thin film transistor and read of the data signal are accomplished at the same time;
step 4, entering a drive stage;
the first scan control signal provides low voltage level, and the first reverse scan control signal provides high voltage level, and the second scan control signal provides low voltage level, and the second reverse scan control signal provides high voltage level, and the data signal provides low voltage level; the fifth, the second thin film transistors are deactivated, and the first, the third thin film transistors are activated, and the capacitor maintains the gate voltage of the fourth thin film transistor at VData+Vth, and the organic light emitting diode emits light, and by directly acquiring the threshold voltage of the fourth thin film transistor to implement threshold voltage compensation, and a current flowing through the organic light emitting diode is irrelevant with the threshold voltage of the fourth thin film transistor.
In the step 2, the first reverse scan control signal provides low voltage level, and the third thin film transistor is deactivated.
In the step 2, the first reverse scan control signal provides high voltage level, and the third thin film transistor is activated; the first reverse scan control signal and the second reverse scan control signal are the same.
The benefits of the present invention are: the present invention provides an AMOLED pixel driving circuit and a pixel driving method. By directly acquiring a threshold voltage of the fourth thin film transistor, i.e. the drive thin film transistor to implement threshold voltage compensation and reducing the change of the current flowing through the organic light emitting diode along with the threshold voltage drift to enormously promote the stability of the current and make the panel brightness even; by inputting the data signal to the source of the fourth thin film transistor, i.e. the drive thin film transistor, the circuit reads the data signal at the same time while acquiring the threshold voltage of the drive thin film transistor to combine the procedures of the acquirement of the threshold voltage and the read of the data signal as one to promote the working efficiency of the circuit; by setting one end of the capacitor to be coupled to a gate of the fourth thin film transistor, i.e. the drive thin film transistor, and the other end to be coupled to the earth, the signal input of the capacitor end can be reduced to simplify the required input signal. The manufacture cost of the panel can be lowered and the stability of the circuit can be raised in advance.
In order to better understand the characteristics and technical aspect of the invention, please refer to the following detailed description of the present invention is concerned with the diagrams, however, provide reference to the accompanying drawings and description only and is not intended to be limiting of the invention.
The technical solution and the beneficial effects of the present invention are best understood from the following detailed description with reference to the accompanying figures and embodiments.
In drawings,
For better explaining the technical solution and the effect of the present invention, the present invention will be further described in detail with the accompanying drawings and the specific embodiments.
Please refer to
A gate of the first thin film transistor M1 is electrically coupled to a second reverse scan control signal XGate2, and a drain is electrically coupled to a power supply voltage VDD, and a source is electrically coupled to a first node A; a gate of the second thin film transistor M2 is electrically coupled to a first scan control signal Gate1, and a drain is electrically coupled to a second node D, and a source is electrically coupled to the first node A; a gate of the third thin film transistor M3 is electrically coupled to a first reverse scan control signal XGate1, and a drain is electrically coupled to an anode of the organic light emitting diode D1 and a source is electrically coupled to a third node S; a gate of the fourth thin film transistor M4 is electrically coupled to a second node D and one end of the capacitor C1, and a drain is electrically coupled to the first node A, and a source is electrically coupled to the third node S and a drain of the fifth thin film transistor M5; a gate of the fifth thin film transistor M5 is electrically coupled to a second scan control signal Gate2, and a drain is electrically coupled to the third node S and the source of the fourth thin film transistor M4, and a source is electrically coupled to a data signal Data; one end of the capacitor C1 is electrically coupled to the second node D and the gate of the fourth thin film transistor M4, and the other end is electrically coupled to an earth GND; the anode of the organic light emitting diode D1 is electrically coupled to the drain of the third thin film transistor M3, and a cathode is electrically coupled to the earth GND.
Specifically, the fourth thin film transistor M4 is a drive thin film transistor, employed for driving the organic light emitting diode D1 to emit light. All of the first thin film transistor M1, the second thin film transistor M2, the third thin film transistor M3, the fourth thin film transistor M4 and the fifth thin film transistor M5 are Low Temperature Poly-silicon thin film transistors, oxide semiconductor thin film transistors or amorphous silicon thin film transistors.
All of the first scan control signal Gate1, the first reverse scan control signal XGate1, the second scan control signal Gate2 and the second reverse scan control signal XGate2 are provided by an external sequence controller. The first scan control signal Gate1, the first reverse scan control signal XGate1, the second scan control signal Gate2, the second reverse scan control signal XGate2 and the data signal Data are combined with one another, and correspond to an initialization stage Initial, a threshold voltage programming stage Program and a drive stage Driving one after another.
Furthermore, as shown in
in the initialization stage Initial, the first scan control signal Gate 1 provides high voltage level, and the first reverse scan control signal XGate1 provides low voltage level, and the second scan control signal Gate2 provides low voltage level, and the second reverse scan control signal XGate2 provides high voltage level, and the data signal Data provides low voltage level; with conjunction of
In the threshold voltage programming stage Program, the first scan control signal Gate1 provides high voltage level, and the first reverse scan control signal XGate1 provides low voltage level, and the second scan control signal Gate2 provides high voltage level, and the second reverse scan control signal XGate2 provides low voltage level, and the data signal Data provides high voltage level; with conjunction of
In the drive stage Driving, the first scan control signal Gate1 provides low voltage level, and the first reverse scan control signal XGate1 provides high voltage level, and the second scan control signal Gate2 provides low voltage level, and the second reverse scan control signal XGate2 provides high voltage level, and the data signal Data provides low voltage level; with conjunction of
The aforesaid AMOLED pixel driving circuit reduces the change of the current flowing through the organic light emitting diode D1 along with the threshold voltage drift by directly acquiring the threshold voltage of the fourth thin film transistor M4, i.e. the drive thin film transistor to implement threshold voltage compensation, to enormously promote the stability of the current and make the panel brightness even; by inputting the data signal Data to the source of the fourth thin film transistor M4, i.e. the drive thin film transistor, the circuit reads the data signal Data at the same time while acquiring the threshold voltage of the drive thin film transistor to combine the procedures of the acquirement of the threshold voltage and the read of the data signal Data as one to promote the working efficiency of the circuit; by setting one end of the capacitor C1 to be coupled to the gate of the fourth thin film transistor M4, i.e. the drive thin film transistor, and the other end to be coupled to the earth GND, the signal input of the capacitor end can be reduced to simplify the required input signal. The manufacture cost of the panel can be lowered and the working efficiency of the circuit can be raised.
Please refer to
step 1, providing the aforesaid AMOLED pixel driving circuit as shown in the aforesaid
step 2, entering an initialization stage Initial.
Corresponding to the first sequence shown in
Alternatively, corresponding to the second sequence shown in
step 3, entering a threshold voltage programming stage Program.
As shown in
step 4, entering a drive stage Driving.
As shown in
Specifically, in the drive stage Driving, the gate voltage Vg of the fourth thin film transistor M4 is: Vg=VData+Vth, and the source voltage Vs is: Vs=VOLED, wherein VOLED is the threshold voltage of the organic light emitting diode D1. According to the current property equation of the thin film transistor in this field, the current IOLED flowing through the organic light emitting diode D1 is:
wherein K is the structure parameter of the thin film transistor. As regarding the thin film transistors having the same structure, K are relatively stable.
According to the equation, by directly acquiring the threshold voltage of the fourth thin film transistor M4 to implement compensation to the threshold voltage thereof in the aforesaid step 3, the current flowing through the organic light emitting diode D1 in the step 4 can be irrelevant with the threshold voltage of the fourth thin film transistor M4.
Please refer to
Please refer to
In conclusion, the present invention provides an AMOLED pixel driving circuit and a pixel driving method. By directly acquiring a threshold voltage of the fourth thin film transistor, i.e. the drive thin film transistor to implement threshold voltage compensation and reducing the change of the current flowing through the organic light emitting diode along with the threshold voltage drift to enormously promote the stability of the current and make the panel brightness even; by inputting the data signal to the source of the fourth thin film transistor, i.e. the drive thin film transistor, the circuit reads the data signal at the same time while acquiring the threshold voltage of the drive thin film transistor to combine the procedures of the acquirement of the threshold voltage and the read of the data signal as one to promote the working efficiency of the circuit; by setting one end of the capacitor to be coupled to a gate of the fourth thin film transistor, i.e. the drive thin film transistor, and the other end to be coupled to the earth, the signal input of the capacitor end can be reduced to simplify the required input signal. The manufacture cost of the panel can be lowered and the working efficiency of the circuit can be raised in advance.
Above are only specific embodiments of the present invention, the scope of the present invention is not limited to this, and to any persons who are skilled in the art, change or replacement which is easily derived should be covered by the protected scope of the invention. Thus, the protected scope of the invention should go by the subject claims.
Number | Date | Country | Kind |
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2015 1 0115666 | Mar 2015 | CN | national |
Filing Document | Filing Date | Country | Kind |
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PCT/CN2015/075848 | 4/3/2015 | WO | 00 |
Publishing Document | Publishing Date | Country | Kind |
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WO2016/145692 | 9/22/2016 | WO | A |
Number | Name | Date | Kind |
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20150339974 | Wu | Nov 2015 | A1 |
Number | Date | Country |
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103236237 | Aug 2013 | CN |
Number | Date | Country | |
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20160307502 A1 | Oct 2016 | US |