Claims
- 1. An amorphous silicon-based thin film photovoltaic device, comprising:a glass substrate; and a laminate structure formed on the glass substrate and consisting of a transparent electrode, a semiconductor layer containing an amorphous silicon-based semiconductor and a back electrode, wherein the glass substrate has a transmittance of 88 to 90% for light having a wavelength of 700 nm and 84 to 87% for light having a wavelength of 800 nm.
- 2. The photovoltaic device according to claim 1, wherein said glass substrate has a thickness large enough to obtain a mechanical strength sufficient for withstanding a wind pressure.
- 3. An amorphous silicon-based thin film photovoltaic device, comprising:a glass substrates; and a laminate structure formed on the glass substrate and consisting of a transparent electrode a semiconductor layer containing an amorphous silicon-based semiconductor and a back electrode, wherein the glass substrate has a transmittance of 88 to 90% for light having a wavelength of 700 nm and 84 to 87% for light having a wavelength of 800 nm and said glass substrate contains 0.026 to 0.065% by weight of iron oxide.
- 4. An amorphous silicon-based thin film photovoltaic device, comprising:a glass substrates; and a laminate structure formed on the glass substrate and consisting of a transparent electrode, a semiconductor layer containing an amorphous silicon-based semiconductor and a back electrode, wherein the glass substrate has a transmittance of 88 to 90% for light having a wavelength of 700 nm and 84 to 87% for light having a wavelength of 800 nm and said glass substrate is prepared by adhering a glass substrate having a relatively high iron oxide content to a reinforcement glass plate having a relatively low iron oxide content.
- 5. The photovoltaic device according to claim 1, wherein a transparent conductive oxide layer forming said transparent electrode has an irregular structure, and said back electrode is formed of a light reflective metal layer or a laminate structure consisting of a transparent conductive oxide layer and a light reflective metal layer.
- 6. The photovoltaic device according to claim 5, wherein said light reflective metal is selected from the group consisting of Ag, Au, Al, Cu, Pt and alloys thereof.
- 7. The photovoltaic device according to claim 5, wherein said transparent conductive oxide is selected from the group consisting of ITO, SnO2 and ZnO.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-201791 |
Jul 1999 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATION
This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 11-201791, Jul. 15, 1999, the entire contents of which are incorporated herein by reference.
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