Claims
- 1. In an amorphous silicon derivative PIN junction photovoltaic device, the improvement comprising a two-layer transparent electrode consisting of ITO and SnO.sub.2 layers that are provided on the P or N layer so that the SnO.sub.2 layer is in contact with said P or N layer.
- 2. The photovoltaic device of claim 1, wherein said SnO.sub.2 layer has a thickness of between about 30 to about 500 angstroms.
- 3. The photovoltaic device of claim 1, wherein the amorphous semiconductor of said P or N layer which contacts the SnO.sub.2 layer is a member selected from the group consisting of an amorphous semiconductor of the general formula: a-Si.sub.(1-x) C.sub.x, an amorphous semiconductor of the general formula: a-Si.sub.(1-y) N.sub.y, and an amorphous semiconductor of the general formula: a-Si.sub.(1-x-y) C.sub.x N.sub.y.
- 4. The photovoltaic device of claim 1, wherein at least one of the P or N layers is an amorphous semiconductor of the general formula: a-Si.sub.(1-x-y) C.sub.x N.sub.y.
- 5. The photovoltaic device of claim 1, comprising an amorphous silicon semiconductor which is doped with a P-type or an N-type impurity to form the P or N layer.
- 6. The photovoltaic device of claim 5, comprising a doped amorphous semiconductor having an electric conductivity of not less than 10.sup.-8 (.OMEGA..multidot.cm).sup.-1.
- 7. The photovoltaic device of claim 6, wherein said doped amorphous semiconductor is an amorphous silicon semiconductor of the general formula: a-Si.sub.(1-x-y) C.sub.x N.sub.y.
- 8. The photovoltaic device of claim 7, wherein the values, x and y, in the general formula satisfy the following equations: 0.05.ltoreq.x.ltoreq.0.75; 0.05.ltoreq.y.ltoreq.0.75; and 0.05.ltoreq.x+y.ltoreq.0.80.
- 9. The photovoltaic device of claim 1 including a PIN heterojunction.
- 10. The photovoltaic device of claim 9, wherein at least one of the P, I and N layers contains at least one of hydrogen and fluorine.
- 11. The photovoltaic device of claim 10 in which the P or N layer is located on a light impinging side of the device.
Priority Claims (2)
Number |
Date |
Country |
Kind |
56-112571 |
Jul 1981 |
JPX |
|
56-112572 |
Jul 1981 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 399,312, filed July 19, 1982, now U.S. Pat. No. 4,450,316.
Foreign Referenced Citations (3)
Number |
Date |
Country |
0070509 |
Jan 1983 |
EPX |
55-29154 |
Mar 1980 |
JPX |
57-204182 |
Dec 1982 |
JPX |
Continuations (1)
|
Number |
Date |
Country |
Parent |
399312 |
Jul 1982 |
|