Claims
- 1. A P-I-N type amorphous semiconductor solar cell including an amorphous silicon semiconductor film, wherein said amorphous silicon semiconductor film comprises at least hydrogen, carbon and oxygen as impurities and has a refractive index of 2.0-3.4, wherein the total quantity of carbon and oxygen in the amorphous silicon semiconductor film is at least 0.1 atom%, wherein said film comprises a A or an n layer thereof and said film comprises a window layer of said solar cell.
- 2. The amorphous silicon semiconductor solar cell of claim 1, wherein said window layer is an n-type semiconductor comprising at least one dopant element selected from the elements in Group V of the Periodic Table.
- 3. The amorphous silicon semiconductor solar cell of claim 1, wherein said window layer is a p-type semiconductor comprising at least one dopant element selected from the elements in Group III of the Periodic Table.
Parent Case Info
This is a continuation of application Ser. No. 662,740, filed 10-19-84, and now abandoned.
US Referenced Citations (6)
Continuations (1)
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Number |
Date |
Country |
Parent |
662740 |
Oct 1984 |
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