In charge-domain signal-processing circuits, signals are represented as charge packets. These charge packets are stored, transferred from one storage location to another, and otherwise processed to carry out specific signal-processing functions. Charge packets are capable of representing analog quantities, with the charge-packet size in coulombs being proportional to the signal represented. Charge-domain operations such as charge-transfer are driven by ‘clock’ voltages, providing discrete-time processing. Thus, charge-domain circuits provide analog, discrete-time signal-processing capability. This capability is well-suited to performing analog-to-digital conversion using pipeline algorithms.
Charge-domain circuits are implemented as charge-coupled devices (CCDs), as MOS bucket-brigade devices (BBDs), and as bipolar BBDs. The present invention pertains to MOS BBDs.
Pipelined analog-to-digital converters (ADCs) are well-known in the general field of ADC design. They are widely used in applications in which high sample rates and high resolution must be combined. Pipelined ADCs implement the well-known successive-approximation analog-to-digital (A/D) conversion algorithm, in which progressively-refined estimates of an input signal are made at sequential times. In pipelined versions of this algorithm, one or several bits are resolved at each pipeline stage, the quantized estimate is subtracted from the signal, and the residue is propagated to the next pipeline stage for further processing. Pipelined ADCs have been implemented using a variety of circuit techniques, including switched-capacitor circuits and charge-domain circuits. The present invention pertains to charge-domain pipelined ADCs employing MOS BBDs.
In BBD-based pipelined ADCs, the gain between pipeline stages is nominally unity: that is, all net charge present in each stage ideally is transferred to the next stage. In practical BBD-based circuits, however, the charge-transfer gain is less than unity, resulting in errors in the A/D conversion process. Moreover, in all pipelined ADCs including those employing BBDs, mismatch of capacitors and of capacitor ratios causes such errors.
The present invention corrects for errors in BBD-based pipelined ADCs due to both capacitor mismatch and to sub-unity charge-transfer gain. Circuits that implement this correction are compact and temperature-stable, and consume low power.
In a preferred embodiment, a pipelined charge domain circuit using bucket brigade charge transfer comprises a first charge transfer circuit; a second charge transfer circuit; and a node coupled to the first charge transfer circuit and the second charge transfer circuit. A clocked capacitor is coupled to the node and to a clocked voltage. Furthermore, a conditionally-switched capacitor is also coupled to the node, with the conditionally-switched capacitor driven by a transition voltage. An adjustment circuit is provided for adjusting the transition voltage according to conditions detected within the pipelined charge domain circuit.
The foregoing will be apparent from the following more particular description of example embodiments of the invention, as illustrated in the accompanying drawings in which like reference characters refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating embodiments of the present invention.
A description of example embodiments of the invention follows.
The teachings of all patents, published applications and references cited herein are incorporated by reference in their entirety.
In the following description, all circuits are discussed assuming electrons as the signal-charge carriers and NFETs for signal-charge transfer. Functionally equivalent circuits can be applied equally well using holes as charge carriers, by employing PFETs and reversed signal and control voltage polarities. In the discussion and figures, charge-transfer circuits are represented abstractly and the relevant behavioral aspects of these circuits are described, but in some instances, specific details of the operation of such circuits are understood by those of skill in the art and/or are not relevant to the invention claimed herein, and thus are not provided. The issue of sub-unity charge transfer gain is common to all known charge-transfer circuits.
The basic principle of a BBD pipeline of the general type employed in a preferred embodiment of this invention is described with the aid of
Operating waveforms of the pipeline stage are shown in
Charge transfer out of the stage begins at time t3 when clock voltage VC1 switches to a low state. Capacitor 5 couples this voltage transition to node 2, driving V2 low as well. Charge-transfer circuit 3 absorbs charge from capacitor 5, limiting the negative excursion of node 2, and eventually causing node 2 to settle to voltage 23 at t4. Voltage 23 is a characteristic of charge-transfer circuit 3, and is independent of the amount of charge which had been stored on node 2. Charge-transfer circuit 3 transfers the charge absorbed from capacitor 5 to node 4 which is part of the stage following the one shown. After t4 charge transfer is complete.
Finally, at time t5, clock voltage VC1 returns to its initial state (voltage 25). Its positive-going transition is coupled to node 2 by capacitor 5, raising node 2 to voltage 24. Neglecting parasitic capacitance, no charge flows onto or off of node 2 during this transition; the voltage change of V2 is therefore equal to the voltage change of VC1 during the transition at t5. Since V2's value at the start of this transition, voltage 23, is independent of charge processed, voltage 24 is likewise independent of charge processed. This transition completes the operating cycle; the resulting voltage 24 at node 2 is thus the initial voltage for the next cycle. Thus the initial voltage state of the stage is constant cycle-to-cycle, and voltage 21=voltage 24. Consequently the initial and final charge on node 2 are also equal, and the charge transferred out is equal to the charge transferred in.
In summary: charge is transferred into the stage shown in
The foregoing description is somewhat idealized; it should be understood that practical circuits depart in many details from this description. Such departures include non-zero parasitic capacitance and imperfect charge transfer, for example. These effects, however, do not change the basic operating principles described above. Certain details of circuit operation, such as clocking of the charge-transfer circuits, are also omitted, as they are not pertinent to the present invention.
In order to form a charge-domain ADC from a pipeline composed of stages similar to
The basic principle employed for conditional charge addition is depicted in
The pipeline stage shown in
After the charge is transferred in, the new features of
At time t3, VC1 switches from high voltage 45 to low voltage 46, instigating charge transfer out of the stage. As explained with reference to
At t5 both VC1 and VQR1 return to their initial high states (voltages 45 and 47 respectively). This transition is identical for VC1 in every clock cycle. VQR1, however, may already be at its high voltage 47, depending on whether or not it switched at t3A. Thus the positive step coupled to node 2 at t5 can have different values, depending on the state of VQR1, resulting in a different final voltage. The added switch 7 in
Unlike the case of
Q
OUT
=Q
IN
+C
6
ΔV
QR1
+Q
CONST Equation 1
where C6 is the capacitance of capacitor 6, ΔVQR1 is the change in VQR1 at t3A, and QCONST is given by:
Q
CONST=(C5+C6)(voltage 41−voltage 43)+C5(voltage 46−voltage 45) Equation 1A
QCONST is nominally a fixed charge, since voltages 41, 43, 45, and 46 are all ideally constant. Departures from this ideal case, which constitute one source of charge-transfer imperfection, will be discussed below.
As is apparent in
When the circuit of
Note that the exact position of time t3A is not critical to the operation of the circuit of
In some ADC implementations it is desirable to provide more than one conditional charge addition in a single pipeline stage. An example of such a stage is shown in
Q
OUT
=Q
IN
+C
6
ΔV
QR1
+C
6A
ΔV
QR2
+Q
CONST2 Equation 2
where QCONST2 is given by:
Q
CONST2=(C5+C6+C6A)(voltage 41−voltage 43)+C5(voltage 46−voltage 45) Equation 2A
The same principle can be extended to any number of capacitors and VR values. For simplicity Equations 1 and 1A will be used as the basis for the following discussion. The principles described are equally applicable to circuits with more than one conditionally-switched capacitor, as in
Two idealizations included in the discussion above are, in general, imperfectly realized in practical circuits: first, because of tolerances in manufacturing, conditionally-switched capacitors such as C6 generally do not have precisely the intended values; second, the final voltage to which the floating diffusion 2 settles (voltage 43 in
Considering a first-order (linear) dependence of voltage 43 upon QOUT, the value of voltage 43 can be written v43=v43N+kQOUT, where v43 is the actual value of voltage 43, v23N is the nominal value, and k is a coefficient embodying the linear dependence on QOUT. Using this expression for voltage 43 in Equation 1A yields:
where QCC is the QOUT-independent (i.e., constant) component of QCONST. Replacing QCONST in Equation 1 with the expression given by Equation 3, we obtain:
Q
OUT
=Q
IN
+C
6
ΔV
QR1
+Q
CC−(C5+C6)kQOUT Equation 4
Turning now to the fabrication errors in C6, we can write C6=C6N+C6E, where C6N is the nominal value of C6, and C6E is the deviation from nominal. Substituting this expression into Equation 4 yields:
Q
OUT
=Q
IN
+C
6N
ΔV
QR1
+C
6E
ΔV
QR1
+Q
CC−(C5+C6)kQOUT Equation 5
In fractional terms, the errors expressed in Equation 5 are C6E/C6N and (C5+C6)k, both of which are dimensionless quantities. In practical designs these fractional errors are small (i.e., <<1). Thus we can find a practically-useful approximation to Equation 5 by replacing QOUT in the last term with the full expression given by Equation 5, and then omitting second-order error effects (i.e., terms including squares or products of the fractional errors). Defining ε=(C5+C6)k and carrying out this procedure, we obtain:
Q
OUT
=Q
IN(1−ε)+C6NΔVQR1(1−ε)+QCC(1−ε)+C6EΔVQR1 Equation 6
Comparing this expression to the idealized expression of Equation 1, it is apparent that the quantity (1ε) is an effective charge-transfer gain; ε is the amount by which that gain falls short of unity. The term C6EΔVQR1 embodies the effect of fabrication error in C6.
A pipelined charge-domain ADC is composed of multiple stages like that of
Consider for example the two-stage pipeline segment shown in
Such a pipeline operates in two-phases: alternating stages operate on alternating half-cycles of the clock. In the circuit of
The input charge to stage 62 in
This expression can be simplified by omitting second-order error terms as was done above, giving:
Equation 8 shows the cumulative effect of charge-transfer gain and capacitor errors in a two-stage pipeline. The same analysis can be extended to multiple stages and to multiple conditionally-switched capacitors per stage.
In order for a pipelined charge-domain ADC to produce linear results, it is essential that the conditionally-added charges from each stage appear at the end of the ADC pipeline with a specific ratio. In the Equation 8 the (non-zero) values of the conditionally-added charges are nominally C63NVR1 and C64NVR2 in the first and second stages respectively. According to equation 8 then, the conditionally-added charge values, as they appear at the pipeline output, are:
[C63NVR1(1−2ε)+C63EVR1] from the first stage, and
[C64NVR2(1−ε)+C64EVR2] from the second stage.
Thus the ADC linearity requirement can be expressed as:
[C63NVR1(1−2ε)+C63EVR1]/[C64NVR2(1−ε)+C64EVR2]=K Equation 9
where K is the intended ratio. In an ideal pipeline segment, in which the charge-transfer and capacitor errors are zero, Equation 9 is simplified to:
(C63NVR1)/(C64NVR2)=K Equation 10
The effects of non-zero gain error ε and capacitor errors such as C63E are evident when Equation 9 is compared to Equation 10.
One aspect of the present invention provides a way to satisfy Equation 9 when these errors have non-zero values. This can consist of providing an adjustment to the reference voltages VR1 and VR2. The nominal capacitance values C63N and C64N and the reference voltages VR1 and VR2 are chosen to satisfy Equation 10; then independently adjustable voltages VA1 and VA2 are added to VR1 and VR2. With this change, and again omitting second-order error terms, the upper and lower terms in the ratio of Equation 9 become:
The added voltages are now adjusted to force the ratio of the adjusted bracketed terms to equal K. For example, setting:
V
A1=[ε−(C63E/C63N)]VR1 Equation 11A
and
V
A2=−(C64E/C64N)VR2 Equation 11B
results in the desired ratio. With this solution, VA2 is adjusted to correct for the error of capacitor 64 and VA1 is adjusted to compensate both for the error of capacitor 63 and for the charge-transfer gain ε.
An alternative adjustment is:
V
A1=(C63E/C63N)VR1 Equation 12A
and
V
A2=[−ε−(C64E/C64N)]VR2 Equation 12B
which also results in the desired ratio. With this solution, VA1 is adjusted to correct for the error of capacitor 63 and VA2 is adjusted to compensate both for the error of capacitor 63 and for the charge-transfer gain F. Both solutions 11A/B and 12A/B are useful. Any linear combination of these solutions can be used with the same result.
This same adjustment principle can be applied in a pipeline with any number of stages. It can also be applied in an ADC design with more than one conditionally-added charge per stage (as in the example of
In addition, the same adjustment principle can be applied to a differential pipeline stage; in such an instance it may be preferable to generate a single adjustment voltage VA that is shared between the two members of the differential circuit.
Recall from the discussion of
If the current source 74 is adjusted to a non-zero value IA, then the initial value of node 75 is VL+VA=VL+IAR73, where R73 is the value of resistor 73. (Note that FET 72 is initially off, so no current other than IA initially flows into resistor 73.) When SQR1 changes state, then FET 72 turns on and connects the load capacitor to node 75, causing VQR1 to charge downward along curve 82. At the end of this transition, current through FET 72 falls to zero and VQR1 settles to final voltage VL+VA. Thus the voltage transition of VQR1 is VL+VA−VH=VR+VA. Adjustable current source 74, which is easily realizable in a practical circuit, thus provides for adjusting the size of the transition in VQR1, as required. A similar circuit in which the resistor is placed in the source of PFET 71 instead of NFET 72 is equally practical. These circuits provide the necessary adjustment of VR with low power and small circuit area consumption.
As discussed in connection with Equations 11A and 12B, the required VA values have two components: one which corrects for a capacitor error and one which corrects for charge-transfer gain error. In the circuit of
The capacitor-error component corrected by VA can be expected to be temperature-invariant because it is due primarily to geometric variation between capacitors, which occurs during circuit fabrication but does not generally change thereafter. Thus an adjustment voltage VA which tracks VR provides a temperature-stable adjustment. Creating a component of VA which tracks VR over temperature using circuits similar to
The second VA component corrects for charge-transfer gain error. This error depends on details of the charge-transfer circuits employed, and depends in general on both fabrication-process variation and on operating temperature. Known BBD charge-transfer circuits include both conventional (passive) ones and ones employing active circuitry, such as those described in a previous patent application by the same inventor entitled “Boosted Charge-Transfer Pipeline”, U.S. patent application Ser. No. 11/807,914, filed May 30, 2007, which is hereby incorporated by reference in its entirety. These charge-transfer circuits exhibit both dynamic and static components of charge-transfer gain error. One aspect of the present invention provides for generating an adjustment-voltage component which tracks the static component of charge-transfer error.
In the discussion leading to Equations 3-6, the charge-transfer gain error was formulated in terms of the variation of charge-transfer-circuit input voltage with the amount of charge transferred. In that discussion the final value of the voltage v43 at the input of the charge-transfer circuit was given as v43=v43N+kQOUT, with v23N the nominal value, and k a coefficient embodying the linear dependence on QOUT. This formulation encompasses both dyanmic dependence of v43 on QOUT (due to incomplete settling) and static dependence. For the following discussion, it will be assumed that the dynamic effect is negligible, and the coefficient k reflects only static dependence.
It is known that the primary mechanism causing this static dependence is a voltage-feedback effect by which a voltage change at the charge-transfer circuit output causes its input voltage to change. As shown in
output charge→output voltage change→input voltage change
If we denote the coefficient relating output voltage change to input voltage change:
β=dvIN/dVOUT
then the coefficient k relating output charge change to input voltage change is:
k=dv
IN
/dQ
OUT=(dvIN/dvOUT)(dvOUT/dQOUT)=βdvOUT/dQOUT
But d(vOUT)/d(QOUT) is simply the inverse of the capacitance at the charge-transfer circuit output node (which is equal to the node capacitance of the next pipeline stage). Defining that capacitance as COUT, we then have:
k=β/C
OUT
Referring again to
ε=(C5+C6)k=(C5+C6)β/COUT=β[(C5+C6)/COUT] Equation 13
Thus the charge-transfer gain error ε depends on the voltage-feedback coefficient β of the charge-transfer circuit and a ratio of pipeline node capacitances. Since the pipeline node-capacitance ratios are known by design within small tolerances (discussed above), the gain error value ε can be derived from a determination of the voltage-feedback coefficient β.
ΔV92=βΔV93
Thus for a known (fixed) value of the drive voltage change ΔV93, ΔV92 provides a direct measure of β. Using the known-by-design values of (C5+C6)/COUT and the reference voltage, the appropriate adjustment voltage (VA2 in Equation 12B, for example) can be generated using known circuit techniques.
The voltage change ΔV92 can be converted to a DC voltage using phase-sensitive detection, since the alternating drive voltage V93 is available as a reference. The frequency of this alternating voltage is not critical, and need not be as high as the sample rate of the charge pipeline, as the parameter being sensed changes only slowly (primarily due to chip temperature changes). Because of the low current at node 92, settling of V92 in response to each V93 transition is relatively slow, so the operating frequency of this circuit must be limited in order to obtain a valid settled value for ΔV92.
Alternatively, two circuits like that of
In a practical charge pipeline, the charge-transfer circuits may not be of identical design at all stages. The β-sensing circuitry just described consumes very little power, and can practically be reproduced for each charge-transfer circuit design employed.
The circuitry described provides a correction voltage based on a charge-transfer circuit which is a replica of the charge transfer circuits in the pipeline. Such a replica-based method provides very good tracking over operating conditions, but typically has small initial mismatches. Such initial mismatches can be removed in a calibration operation, at manufacturing test or during circuit power-up for example. After the calibration, the replica-based circuit provides tracking of subsequent changes in operating conditions, including temperature and supply voltage.
Such an initial calibration step also (simultaneously) provides correction for any dynamic component of charge-transfer gain error which is present under the calibration conditions. Any change of this dynamic error with operating-condition changes (especially temperature) after calibration, however, is not corrected by the techniques of this invention.
While this invention has been particularly shown and described with references to example embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the invention encompassed by the appended claims.
This application claims the benefit of U.S. Provisional Application No. 60/881,967, filed on Jan. 23, 2007. The entire teachings of the above application(s) are incorporated herein by reference.
Number | Date | Country | |
---|---|---|---|
60881967 | Jan 2007 | US |