Claims
- 1. A charge coupled device (CCD) having a semiconductor layer of a first conductivity type, a layer of insulating material on one surface of said semiconductor layer, a row of CCD shift electrodes on aid layer of insulating material, means for feeding pulse train voltages displaced in phase relative to one another to said CCD shift electrodes in a sequential manner, a first field effect transistor, a first terminal, a further shift electrode E1 on said insulating layer connected to said first terminal and through said first field effect transistor to a pulse train voltage source U1 which intermittently supplies one of said pulse train voltages to said further shift electrode and having a first amplitude during its initial stage and a second lower amplitude at its later stage, said semiconductor layer being connected to a reference potential, a field effect capacitor 4, 5 comprising a gate electrode 4 and a diffused zone located at the surface of said semiconductor layer, said field effect capacitor including said gate electrode 4 arranged on said layer of insulating material and a part of the surface of said semiconductor layer located beneath said gate electrode and adjacent to said diffused zone, means for supplying a periodic pulse square wave pulse (U.sub.D) to said diffused zone which occurs after said pulse train voltage U1, and said terminal A of said further shift electrode E1 connected to the gate 4 of said field effect capacitor to serve as a signal output and an additional shift electrode and a periodic square wave pulse .phi.A which occurs after said periodic pulse U.sub.D supplied to said additional shift electrode.
- 2. A charge coupled device as claimed in claim 1, which includes an output stage connected to said first terminal.
- 3. A charge coupled device as claimed in claim 2, in which said output stage includes a second field effect transistor whose source terminal is connected via an impedance element to said reference potential and to a circuit output terminal, the gate of said second field effect transistor being connected to said first terminal.
- 4. A charge coupled device as claimed in claim 1, in which said CCD arrangement, including said field effect capacitor and said field effect transistor, are formed as part of a monolithic integrated MOS circuit.
- 5. A charge coupled device (CCD) having a semiconductor layer of a first conductivity type, a layer of insulating material on one surface of said semiconductor layer, a row of CCD shift electrodes on said layer of insulating material, means for feeding pulse train voltages displaced in phase relative to one another to said CCD shift electrode in a sequential manner, a first field effect transistor, a first terminal, a further shift electrode E1 on said insulating layer connected to said first terminal and through said first field effect transistor to a pulse train voltage source U1 which intermittently supplies one of said pulse train voltages to said further shift electrode and having a first amplitude during its initial stage and a second lower amplitude at its later stage, said semiconductor layer being connected to a reference potential, a second field effect transistor comprising a gate electrode 4 and a pair of diffused zones located at the surface of said semiconductor layer, said second field effect transistor including said gate electrode 4 arranged on said layer of insulating material and a part of the surface of said semiconductor layer and located between said pair of diffused zones means for supplying a periodic square wave pulse (U.sub.D) to one of said pair of diffused zones which occurs after said pulse train voltage U1, and said terminal of said further shift electrode E1 connected to the gate 4 of said second field effect transistor, an additional shift electrode and a periodic square wave pulse .phi.A which occurs after said periodic pulse U.sub.D supplied to said additional shift electrode, an impedance connected between said other one of said pair of diffused zones and said reference potential and an output terminal connected to said other one of said pair of diffused zones.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2721812 |
May 1977 |
DEX |
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Parent Case Info
This is a continuation of application Ser. No. 896,754, filed Apr. 17, 1978.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3623132 |
Green |
Nov 1971 |
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4048519 |
Hoffman et al. |
Sep 1977 |
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Non-Patent Literature Citations (2)
Entry |
MacLennan "Charge-Coupled Devices: 3-Signal Processing", Wireless World (2/75) pp. 61-65. |
Kosonocky "Charge-Coupled Devices--An Overview", Wescon Technical Papers, vol. 18 (1974), session 2/1, pp. 1-20. |
Continuations (1)
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Number |
Date |
Country |
Parent |
896754 |
Apr 1978 |
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