NSF Award
8761046
This SBIR project will study the effects on layer interface abruptness of OMCVD reactor design. Three different verticle reactor configurations will be investigated: the pancake-shaped susceptor, the barrel-shaped susceptor, and the dual susceptor. Although all three configurations are vertical reactors, the gas dynamics and thermal profiles in all three are different. These differences are expected to lead to vastly difference surface conditions and interface formation. This study will focus on the generation of a data base and understanding of III-V heterostructures and interfaces, especially in the GaAs/AlGaAs system. A preliminary model to describe interface formation for the different reactors of interest will be developed. The completion of Phase 1 will identify growth experiments that need to be carried out in order to verify the model. Phase 2 will involve growth and characterization of heterostructures to feedback into the model, and to allow prediction of interface formation. The combined phases 1 and 2 work should lead to a understanding of the fundamental mechanisms involved in interface formation in OMCVD. Such understanding will be necessary for the design and fabrication of the next generation of III-V devices.
