ANISOTROPIC MAGNETORESISTIVE (AMR) SENSOR WITHOUT SET AND RESET DEVICE

Abstract

The present invention comprises an anisotropic magnetoresistive (AMR) sensor without a set and reset device comprising a substrate, an exchange bias layer, an AMR layer and a collection of barber-pole electrodes. An exchange bias layer is deposited on the substrate and an AMR layer is deposited on the exchange bias layer. The AMR layer is composed of multiple groups of AMR strips, wherein each group of AMR strips is composed of several AMR strips. The barber-pole electrodes are arranged on each AMR strip under certain rules. The AMR sensor achieves coupling by using the exchange bias layer, without requiring a reset/set coil. Because a coil is not used, the power consumption of the chip is reduced greatly, and the manufacturing process is simpler, providing improved yield and lower cost.

Description

TECHNICAL FIELD

The utility model relates to a magnetoresistive sensor configured to detect vector distribution of a magnetic including at least one type of anisotropic magnetoresistive device deposited on a substrate, the magnetoresistive device including a plurality of anisotropic magnetoresistive (AMR) elements connected in series through conductive bars. The magnetoresistive device adopts a Barber-pole electrode structure to improve the sensitivity in a weak magnetic field and expand the linear operating range. Moreover,the exchange coupling characteristic of art anti-ferromagnetic layer is used and a reset and set device is cancelled, thereby further reducing the power consumption and the cost of the sensor.

BACKGROUND ART

An anisotropy magnetoresistance (AMR) effect refers to a phenomenon that the specific resistance in a ferromagnetic material changes as an included angle between a magnetization intensity of the ferromagnetic material and a current direction changes. The AMR effect is first discovered by Thomson in 1857. A sensor prepared by using the AMR effect is referred to as an ARM sensor.

Generally, a structure called Barber-pole electrode is adopted in the current AMR sensor design. Specifically, some metal conductive electrodes such as aluminum, copper, and gold are disposed on AMR strips, and the electrodes are arranged to form 45°-structures with long axes of the AMR strips. As shown in FIG. 1, a barber-pole electrode achieves the objective of changing the current direction by changing the structures of the electrodes, which is advantageous in a small volume and low power consumption compared with other methods, thereby being widely applied e patent No. DE3442278A1 has descriptions about the barber-pole electrode.

The AMR sensor requires an additional magnetic field during use to bias the sensor, so as to improve the linearity and stability of the sensor and at the same time eliminate temperature drift and improve the signal-to-noise rate of the sensor. DE4221385C2 proposed to add a macroscopic permanent magnet near a magnetoresistive layer structure to implement bias by externally adding a permanent magnet. However, the method has the defects of a limited sensor size and complex assembling. Therefore, the externally added permanent magnet is gradually replaced with a permanent magnet film which is deposited near a magnetoresistive film and is isolated from the magnetoresistive film by an insulating film. The method has the defects that a magnetic domain of the permanent magnetic layer is difficult to control and Barkhausen noise will be generated. Another method is to bias by using an exchange coupling function of an anti-ferromagnetic layer, and the method is mentioned in US 20150061658.

In addition, if an AMR sensor is interfered by an external large magnetic field during fork, the magnetic domain distribution on AMR strips will be destroyed, such that the magnetic domains on the AMR strips are distributed randomly along some directions. Therefore, the sensitivity of the sensor is reduced, attenuated, or even failed. A common method at present, e.g., US 20130300408A1, is to deposit a set/reset coil on an AMR sensor to achieve, he following objectives: the sensor is enabled to work in a high-sensitivity mode; the polarity of an output response cure is reversed; and the linearity is improved to reduce influences of the vertical axis effect and the temperature. However, the method has the defects of increased power consumption and limited maximum measurement magnetic field.

SUMMARY OF THE UTILITY MODEL

In order to solve the foregoing problems, the utility model provides an AMR sensor without a set and reset device. The sensor includes a substrate, an exchange bias layer, an AMR layer and a collection of barber-pole electrodes. The exchange bias layer is deposited on the substrate, and the AMR layer is deposited on the exchange bias layer. The AMR layer is composed of multiple groups of AMR strips, and the barber-pole electrodes are arranged on each AMR strip under certain rules.

Further, each group of AMR strips is composed of several AMR strips.

Further, the several AMR strips are connected in series to form a group of AMR strips.

Further, the multiple groups of AMR strips are parallel to each other or the multiple groups of AMR strips are arranged in a parallel direction and a perpendicular direction.

Further, the sale included angle is formed between the barber-pole electrodes on the several AMR strips of each group of AMR strips and the respective several AMR strips.

Further, the included angle between the AMR strip and the barber-pole electrode arranged on the AMR strip is ±45°.

Further, the exchange bias layer is made of an anti-ferromagnetic material.

Further, the AMR strips and the barber-pole electrodes arranged on the AMR strips form resistance-sensitive elements, and the resistance-sensitive elements are connected through wires to form a Wheatstone bridge.

Further, the multiple resistance-sensitive elements include two types of resistance-sensitive elements, wherein in one type of resistance-sensitive element, the included angle between the AMR strip and the barber-pole electrode arranged on the AMR strip is 45°, and in the other type of resistance-sensitive element, the included angle between the AMR strip and the barb pole electrode arranged on the AMR strip is −45°, and the two types of resistance-sensitive elements are closely arranged alternatively.

The AMR sensor without a set and reset device of the utility model has the following beneficial effects:

1. The utility model achieves coupling by using an exchange bias layer, without requiring a reset/set coil. Because a coil is not used, the power consumption of the chip is reduced greatly, and the manufacturing process is simpler, thereby improving the yield of the product and reducing the production costs.

2. The AMR strips are arranged in a parallel direction and a perpendicular direction in the same chip. After magnetic annealing at 45°, the chip can be switched from single-axis operation to double-axes operation, and magnetic fields in multiple directions can be measured at the same time.

3. The design has no gradient effect and the field is measured more accurately.

4. Compared with other designs, the design adopts a resister pair and so on and does not require a resistance adjustment process.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to describe the technical solution in the embodiments of the utility model or in the prior art more clearly the accompanying drawings to be used in the descriptions about the embodiments or the prior art are briefly introduced below. Obviously, the accompanying drawings in the following descriptions are only some embodiments of the utility model. Those of ordinary skill in the art can also obtain other accompanying drawings according to these accompanying drawings without creative efforts.

FIG. 1 is a schematic structural diagram of a barber-pole electrode;

FIG. 2 is a schematic structural diagram of an AMR sensor chip without a set and reset device according to the utility model;

FIG, 3 is a partially enlarged schematic diagram of FIG. 2;

FIG. 4 is a schematic diagram of a connection between AMR strips and barber-pole electrodes;

FIG. 5 is a schematic diagram of circuits forming a Wheatstone bridge;

FIG. 6 is a sectional diagram of a chip involved in the utility model;

FIG. 7 is a schematic diagram of a magnetic annealing direction and exchange coupling magnetization of AMR strips;

FIG. 8 is an illustration of a design of resister units closely arranged alternately; and

FIG. 9 is an illustration of a design of resister units in a conventional sensor.

In the drawings: 100—AMR sensor without a set and reset electrode, 102—eletrode, 103—electrode, 104—electrode, 110—AMR layer, 120—wire, 122—barber-pole electrode, 130—exchange bias layer, 140—substrate, 200—AMR sensor chip, 300—AMR sensor chip.

DETAILED DESCRIPTION

The technical solutions in the embodiments of the utility model will be described clearly and completely below with reference to the accompanying drawings in the embodiments of the utility model. Obviously, the described embodiments are merely some rather than all of the embodiments of the utility model. All other embodiments obtained by those of ordinary skill in the art without creative efforts based on the embodiments in the utility model belong to the scope of protection of the utility model.

The structure of the sensor 100 of the utility model is shown in FIG. 2 and FIG. 3: multiple groups of AMR strips 110 are arranged in an X-axis direction or a Y-axis direction (in the X-axis direction in the drawings). Barber-pole electrodes 122 are arranged on the AMR strips under certain rules. The barber-pole electrode and the AMR strip are generally arranged at an angle of ±45° to forth a resistance-sensitive element. For example, barber-pole electrodes on several AMR strips of R1 and the AMR strips form the same included angle of +45°. The barber-pole electrodes and the AMR strips jointly form the resistance-sensitive elements of the chip. Multiple such resistance-sensitive elements are connected through wires 120 to form a Wheatstone bridge, and the Wheatstone bridge is then connected to 4 electrodes (101, 102, 103, 104) to form the whole chip, thereby finally forming the structure as shown in FIG. 4 and FIG. 5.

FIG. 6 shows a sectional diagram of a chip involved in the utility model. An exchange bias layer 130 is deposited on a substrate 140, and an AMR layer 110 is deposited above the exchange bias layer 130. If a conventional AMR sensor is interfered by an external large magnetic field during work, the magnetic domain distribution in AMR strips will be destroyed, such that the sensitivity of the sensor is attenuated. A current method is to deposit a set/reset coil on the AMR sensor, and when a current passes through the AMR sensor, the magnetic domain directions in the AMR strips are reunified to one direction by using a magnetic field generated by the coil, thereby ensuring the high sensitivity and repeatability of the sensor. In the utility model, the exchange bias layer 130 is made of an anti-ferromagnetic material (PtMn, NiMn, IrMn, etc.). The magnetic moment of the magnetoresistive layer is made firm and stabilized at the original position by using the exchange coupling function between the exchange bias layer 130 and the AMR layer 110. Therefore, the interference from the external magnetic field is avoided, such that the objective of high sensitivity and high repeatability can also be achieved in the utility model without a set/reset coil.

The exchange coupling function involved in the chip is further illustrated below. As shown in FIG. 7, AMR sensor chips 200 and 300 are placed adjacent to each other. The chips use the same design, and the only difference is that long axes of AMR strips in the chip 200 are along the X direction while long axes of AMR strips in the chip 300 are along the Y direction. In order to implement the exchange coupling, it is first required to magnetically anneal the exchange bias layer. An external magnetic field He is applied, during annealing, an included angle between the external magnetic field and the X-axis direction being 45°. After the magnetic annealing is finished, there is a magnetization vector K on each strip of the chips 200 and 300 because of the exchange coupling function between the anti-ferromagnetic layer and the magnetoresistive layer. The direction of the magnetization vector K is consistent with the direction of He. Moreover, there are components K_x and K_y in the X-axis direction and the Y-axis direction respectively. As such, through one annealing process, the two chips 200 and 300 with different sensitive directions can implement the measurement functions at the same time, thereby greatly simplifying the production process.

In addition, the sensor generally needs multiple resister elements to form a full-bridge or half-bridge structure to work normally. Different magnetoresistive elements in a conventional sensor will be located at different positions. As shown in FIG. 9, there is a position deviation d between resister elements R1 and R2 in the horizontal direction. In this case, if the measured external magnetic field is not uniform and has intensity fluctuations in a tiny distance, there will be a problem of resistance mismatching among R1, R2, R3, and R4. Therefore, output of the sensor is affected, that is, the so-called “gradient effect” is generated. The chip involved in the patent is designed in such a manner that resister units are closely arranged alternately, as shown in FIG. 8, thereby eliminating the position deviation and achieving more accurate field measurement.

Preferred embodiments of the utility model are described above. It should be pointed out that for those of ordinary skill in the art, several improvements and modifications can further be made without departing from the principle of the utility model. These improvements and modifications are also considered as the protection scope of the utility model.

Claims

1. An anisotropic magnetoresistive (AMR) sensor without a set and reset device, wherein the sensor comprises: a substrate;an exchange bias layer;an AMR layer; anda collection of barber-pole electrodes;wherein the exchange bias layer is deposited on the substrate,wherein the AMR layer is deposited on the exchange bias layer,wherein the AMR layer is composed of multiple groups of AMR strips,wherein each group of AMR strips is composed of several AMR strips, andwherein the barber-pole electrodes are arranged on each AMR strip under certain rules.

2. The AMR sensor without a set and reset device according to claim 1, wherein said several AMR strips are connected in series to form a group of AMR strips.

3. The AMR sensor without a set and reset device according to claim 2, wherein said multiple groups of AMR strips are parallel to each other.

4. The AMR sensor without a set and reset device according to claim 3, wherein said same included angle is formed between each AMR strip in the same group of AMR strips and the barber-pole electrode located on the AMR strip.

5. The AMR sensor without a set and reset device according to claim 4, wherein said included angle between each of the AMR strips and the barber-pole electrode arranged on the AMR strip is ±45°.

6. The AMR sensor without a set and reset device according to claim 1, wherein said exchange bias layer is made of an anti-ferromagnetic material.

7. The AMR sensor without a set and reset device according to claim 6, wherein said AMR strips and the barber-pole electrodes arranged on the AMR strips form resistance-sensitive elements, and the resistance-sensitive elements are connected through wires to form a Wheatstone bridge.

8. The AMR sensor without a set and reset device according to claim 7, wherein said resistance-sensitive elements comprise two types of resistance-sensitive elements, wherein in one type of resistance-sensitive element, the included angle between the AMR strip and the barber-pole electrode arranged on the AMR strip is 45°, and in the other type of resistance-sensitive element, the included angle between the AMR strip and the barber-pole electrode arranged on the AMR strip is −45°, and the two types of resistance-sensitive elements are closely arranged alternatively.