Claims
- 1. A method of making an anode for a field emission display, the method comprising:
- disposing a transparent reflectance reducing intermediate layer on a transparent substrate;
- disposing a grille on the intermediate layer with the grille defining a pattern of open regions on the intermediate layer;
- disposing a conductive layer over the grille and intermediate layer; and
- disposing a phosphor layer on the conductive layer.
- 2. The method of claim 1, wherein the substrate is formed from soda-lime glass.
- 3. The method of claim 1, wherein the refractive index for the intermediate layer is determined by the Expression:
- RI=.sqroot.n.sub.1 .multidot.n.sub.2 (1)
- where,
- n.sub.1 =The refractive index of substrate;
- n.sub.2 =The refractive index of grille.
- 4. The method of claim 1, wherein a thickness of the intermediate layer is determined by the Expression: ##EQU2## where, Optical thickness=1/4 .lambda. of a center frequency of a visible spectrum.
- 5. The method of claim 1, wherein the reflectance reducing intermediate layer is formed of silicon nitride.
- 6. A method of making an anode for a field emission display, the method comprising:
- disposing a transparent reflectance reducing intermediate layer on a transparent substrate;
- disposing a grille on the intermediate layer with the grille defining a pattern of open regions on the intermediate layer;
- disposing a conductive layer over the grille and intermediate layer;
- disposing a transparent reflectance reducing glass layer on the conductive layer; and
- disposing a phosphor layer on the conductive layer.
- 7. The method of claim 6, wherein the substrate is formed from soda-lime glass.
- 8. The method of claim 6, wherein the refractive index for the intermediate layer is determined by the Expression:
- RI=.sqroot.n.sub.1 .multidot.n.sub.2 (1)
- where,
- n.sub.1 =The refractive index of substrate;
- n.sub.2 =The refractive index of grille.
- 9. The method of claim 6, wherein a thickness of the intermediate layer is determined by the Expression: ##EQU3## where, Optical thickness=1/4 .lambda. of a center frequency of a visible spectrum.
- 10. The method of claim 6, wherein the reflectance reducing intermediate layer is formed of silicon nitride.
- 11. The method of claim 6, wherein the reflectance reducing glass includes a lead-based glass.
- 12. The method of claim 6, wherein the reflectance reducing glass has a melting point less than a melting point of the conductive layer.
- 13. The method of claim 6, wherein the reflectance reducing glass has a melting point at or below 525.degree. C.
- 14. The method of claim 6, wherein the reflectance reducing glass layer is formed between the conductive layer and phosphor layer by heating the anode to a temperature of 525.degree. C.
- 15. The method of claim 14, wherein the reflectance reducing glass layer is formed between the conductive layer and phosphor layer by heating the anode to 525.degree. C. for 20 minutes.
- 16. The method of claim 6, wherein the anode is further formed by disposing a third reflectance reducing layer on the substrate opposite a surface on which the intermediate layer is disposed.
- 17. The method of claim 16, wherein the third reflectance reducing layer is formed for magnesium floride.
- 18. The method of claim 16, wherein the third reflectance reducing layer is formed for silicon dioxide.
- 19. A method of making a field emission display, the method comprising:
- disposing a grille defining a pattern of open regions over a substrate;
- disposing a conductive layer over the grille;
- forming a reflectance reducing glass layer over the conductive layer; and
- disposing a phosphor layer over the reflectance reducing glass layer.
- 20. The method of claim 19 wherein the reflectance reducing glass layer is formed from an index matching glass.
- 21. The method of claim 20 wherein the index matching glass is a lead-based glass.
- 22. The method of claim 21 wherein the lead-based glass is Corning 1416.
- 23. The method of claim 19 wherein the forming includes
- depositing a layer of glass particles on the conductive layer, and
- heating the glass particles to a sufficient temperature to cause them to melt and flow to form a layer.
- 24. The method of claim 19 wherein the depositing is performed before disposing a phosphor layer, and wherein the heating is performed after disposing a phosphor layer.
CROSS REFERENCE TO RELATED APPLICATION
This application is a divisional of application Ser. No. 08/781,830, filed Jan. 10, 1997, now pending, which is incorporated by reference in its entirety.
STATEMENT OF GOVERNMENT RIGHTS
This invention was made with Government support under Contract No. DABT63-93-C-0025 awarded by the Advanced Research Projects Agency (ARPA). The Government may have certain rights in this invention.
US Referenced Citations (5)
Non-Patent Literature Citations (1)
Entry |
Hase, Takashi et al., Advances in Electronics and Electron Physics, vol. 79, pp. 352-357, Ed. Peter W. Hawkes, Academic Press, Inc. Jan. 1990. |
Divisions (1)
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Number |
Date |
Country |
Parent |
781830 |
Jan 1997 |
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