Patent Application
20220209426
This application relates to the field of mobile communications technologies, and in particular, to an antenna and a communications apparatus.
With the advent of high-speed communication eras such as 5th generation (5G) and virtual reality (VR), millimeter-wave communication gradually becomes a mainstream, and there are growing design and application requirements of a millimeter-wave antenna. Because a length of a transmission path of a millimeter-wave band has great impact on a signal amplitude loss, a conventional architecture of a radio frequency processing chip integrated circuit (IC)+a mainboard printed circuit board (PCB)+an antenna gradually cannot meet a high performance requirement. A wavelength of the millimeter-wave band is very short, and electrical performance of the millimeter-wave band is highly sensitive to a machining error. An antenna using the millimeter-wave band has a high requirement on technique precision. If manufacturing precision is poor, an impedance mismatch may occur, causing signal reflection. A conventional PCB processing technique cannot meet a requirement on millimeter-wave processing precision, and an impedance mismatch easily occurs, causing a relatively high signal loss on the transmission path of the millimeter-wave band.
An antenna-in-package (AiP) technology gradually becomes a mainstream antenna technology in 5G and millimeter-wave high-speed communications systems, and has broad application and market prospects. The AiP technology uses an IC+antenna in package architecture. In the AiP architecture, an antenna feeder path is very short. This can maximize equivalent isotropic radiated power (EIRP) of a wireless system and facilitate wider coverage.
However, in the current AiP technology, due to a limitation of an existing packaging and machining technique, an antenna in package in the current AiP technology has a large thickness and a large quantity of film layers. As a result, the antenna in package cannot meet a requirement for high performance of a millimeter-wave band antenna.
Embodiments of this application provide an antenna and a communications apparatus. A substrate stacked structure of the antenna is redesigned such that an organic material with a low dielectric constant and a low dielectric loss is applicable to chip packaging. This overcomes a current technical defect that a low dielectric material is not applicable to chip packaging due to a severe mismatch between a coefficient of thermal expansion of the low dielectric material and a coefficient of thermal expansion of an organic resin package substrate of a radio frequency processing chip, and helps reduce a quantity of layers and a total thickness of organic substrates between surface radiating patches and inner radiating patches, to meet a requirement for installing a millimeter-wave antenna in narrow space and a requirement for high performance of the millimeter-wave band antenna.
An embodiment of this application provides an antenna, including surface radiating patches, inner radiating patches, a first dielectric substrate disposed between the surface radiating patches and the inner radiating patches, and a second dielectric substrate that is not disposed between the surface radiating patches and the inner radiating patches and on which the first dielectric substrate is stacked, where the second dielectric substrate is configured to carry antenna feeders connected to the inner radiating patches. A dielectric constant or dielectric loss of the first dielectric substrate is lower than that of an organic resin substrate, and a coefficient of thermal expansion of the second dielectric substrate is lower than that of the organic resin substrate. The first dielectric substrate with a low dielectric constant is disposed between the surface radiating patches and the inner radiating patches, and the dielectric constant or dielectric loss of the first dielectric substrate is lower than that of a chip package substrate (a conventional chip package substrate, for example, a mainboard in a terminal, is an organic resin substrate). This helps reduce a total thickness of the substrate between the surface radiating patches and the inner radiating patches, to meet a requirement for installing a millimeter-wave antenna in narrow space, and helps maintain high performance of the millimeter-wave antenna. Because a coefficient of thermal expansion of a low dielectric material is higher than that of the organic resin substrate, when the antenna is integrated on the chip package substrate, the chip package substrate is easily destabilized. In this application, the second dielectric substrate whose coefficient of thermal expansion is lower than that of the organic resin substrate is disposed, and an overall coefficient of thermal expansion of the antenna is decreased to match a coefficient of thermal expansion of the organic resin substrate such that the low dielectric material is applicable to chip packaging. Further, when the antenna uses the low dielectric material, the millimeter-wave antenna can be integrated on the chip package substrate.
Because a dielectric constant of a material of the substrate between the surface radiating patches and the inner radiating patches has relatively significant impact on a radio frequency signal, material selection for the substrate between the surface radiating patches and the inner radiating patches may focus more on a low dielectric constant. However, impact of a dielectric constant of a material of a substrate below the inner radiating patches on the radio frequency signal is far less than that of the material of the substrate between the surface radiating patches and the inner radiating patches. Therefore, a low dielectric constant may not be focused on. If the material of the substrate between the surface radiating patches and the inner radiating patches is a low dielectric constant material, to avoid a mismatch caused by an excessively high coefficient of thermal expansion of the low dielectric constant material, material selection for a substrate that is not between the surface radiating patches and the inner radiating patches may focus more on a coefficient of thermal expansion.
In a possible design, the dielectric constant of the first dielectric substrate is lower than 3.6.
In a possible design, the coefficient of thermal expansion of the second dielectric substrate is 0.7-10 parts-per-million (PPM)/degrees Celsius (° C.).
In a possible design, a material of the first dielectric substrate is polytetrafluoroethylene (PTFE) or a PTFE composite material including fiberglass cloth, and a dielectric constant of the material of the first dielectric substrate is 2-2.5.
In a possible design, a material of the second dielectric substrate is a bismaleimide triazine (BT) resin substrate material, or a glass epoxy multilayer material with a high glass transition temperature.
In a possible design, to meet a thickness requirement of a dielectric between the surface radiating patches and the inner radiating patches, space between the surface radiating patches and the inner radiating patches is further filled with an adhesive layer or at least one layer of organic resin substrate. For example, an adhesive layer may be added between the first dielectric substrate and the inner radiating patches. For another example, one or more layers of organic resin substrates are added between the surface radiating patches and the first dielectric substrate. For still another example, one or more layers of organic resin substrates may be added between the first dielectric substrate and the inner radiating patches.
In a possible design, to meet a dielectric thickness requirement of the substrate that is not between the surface radiating patches and the inner radiating patches, space between the inner radiating patches and the second dielectric substrate is further filled with at least one layer of organic resin substrate configured to carry the antenna feeders.
In a possible design, at least one layer of organic resin substrate is further disposed outside the second dielectric substrate, and is configured to carry the antenna feeders, where the outside of the second dielectric substrate refers to a side that is of the second dielectric substrate and that is away from the first dielectric substrate.
In a possible design, the surface radiating patches are arranged in an N×N array on the first dielectric substrate, and the inner radiating patches are distributed in an N×N array on the second dielectric substrate, where N is a positive integer greater than 1. In addition, the surface radiating patches and the inner radiating patches overlap in a direction perpendicular to the first dielectric substrate.
In a possible design, the organic resin substrate is further configured to carry a shield layer and a ground layer, and the shield layer and the ground layer are alternately disposed.
According to a second aspect, an embodiment of this application provides a communications apparatus, including a processor, a transceiver, and a memory, and further including the antenna according to any one of the first aspect or the possible designs of the first aspect. The processor, the transceiver, and the memory are connected through a bus. There are one or more transceivers. The transceiver includes a receiver and a transmitter, and the receiver and the transmitter are electrically connected to the antenna.
The following describes the technical solutions in the embodiments of this application with reference to the accompanying drawings in the embodiments of this application. A specific operation method in method embodiments may also be applied to an apparatus embodiment or a system embodiment. In the descriptions of this application, unless otherwise stated, “a plurality of” means two or more.
For an architecture of a system provided in the embodiments, refer to
The terminal includes one or more processors, one or more memories, and one or more transceivers that are connected through a bus. The one or more transceivers are connected to an antenna or antenna array. Each transceiver includes a transmitter Tx and a receiver Rx. The one or more memories include computer program code.
The base station provides wireless access for the terminal to the network, and includes one or more processors, one or more memories, one or more network interfaces, and one or more transceivers (each transceiver includes a receiver Rx and a transmitter Tx) that are connected through a bus. The one or more transceivers are connected to an antenna or antenna array. The one or more processors include computer program code. The network interface is connected to a core network through a link (for example, a link between the network interface and the core network), or is connected to another base station through a wired or wireless link.
The network may further include the core network device, such as a network control unit (NCE), a mobility management entity (MME), or a serving gateway (SGW). The core network device may provide a further connection to a network, such as a telephone network and/or a data communications network (for example, the Internet). The base station may be connected to the core network device through a link (for example, an Si interface). The core network device includes one or more processors, one or more memories, and one or more network interfaces that are connected through a bus. The one or more memories include computer program code.
The memories included in the terminal, the base station, and the core network device may be of a type suitable for any local technology environment, and may be implemented using any suitable data storage technology.
A meaning of the antenna described below in the embodiments of this application covers the antenna or antenna array in the system shown in
It should be noted that the terms “system” and “network” may be used interchangeably in the embodiments of the present disclosure. “A plurality of” means two or more. In view of this, “a physical of” may also be understood as “at least two” in the embodiments of the present disclosure. The term “and/or” is an association relationship for describing associated objects and represents that three relationships may exist. For example, A and/or B may represent the following three cases: only A exists, both A and B exist, and only B exists. In addition, the character “/” generally indicates an “or” relationship between the associated objects.
The distance between the surface radiating patches and the inner radiating patches is related to the antenna frequency band and a dielectric constant of the organic substrate (five dielectric layers in
Because the organic substrate between the surface radiating patches and the inner radiating patches is usually made of organic resin used for conventional packaging, the dielectric constant of the organic substrate is usually higher than 3.6. When the antenna frequency band uses a 4th generation (4G) frequency band, for example, 1.8-2.7 gigahertz (GHz), a total board thickness of the antenna shown in
When the antenna frequency band uses a high frequency band, for example, a millimeter-wave band of 26.5-29.5 GHz, theoretically, a smaller distance between the surface radiating patches 11 and the inner radiating patches 12 of the antenna shown in
To address the foregoing problem, this application further provides an antenna. A substrate stacked structure of the antenna is redesigned to reduce a quantity of layers and a total thickness of organic substrates between surface radiating patches and inner radiating patches without increasing processing difficulty and processing costs of the organic substrates. This meets a requirement for installing a millimeter-wave antenna in narrow space, implements packaging of the antenna on a chip package substrate, and meets a requirement for high performance of the millimeter-wave band antenna.
As shown in
In this application, the first dielectric substrate 21 with a low dielectric constant is disposed between the surface radiating patches 11 and the inner radiating patches 12, and the dielectric constant or dielectric loss of the first dielectric substrate 21 is lower than that of a chip package substrate (for example, a mainboard in a terminal), where a conventional chip package substrate is an organic resin substrate. This helps reduce a total thickness of the substrate between the surface radiating patches 11 and the inner radiating patches 12, to meet a requirement for installing a millimeter-wave antenna in narrow space, and helps maintain high performance of the millimeter-wave antenna. Because a coefficient of thermal expansion of a low dielectric material is higher than that of the organic resin substrate, when the antenna is integrated on the chip package substrate, the chip package substrate is easily destabilized. In this application, the second dielectric substrate 22 whose coefficient of thermal expansion is lower than that of the organic resin substrate is disposed, and an overall coefficient of thermal expansion of the antenna is decreased to match a coefficient of thermal expansion of the organic resin substrate such that the low dielectric material is applicable to chip packaging. Further, when the antenna uses the low dielectric material, the millimeter-wave antenna can be integrated on the chip package substrate.
In a possible design, at least one layer of organic resin substrate is further disposed outside the second dielectric substrate 22, and is configured to carry the antenna feeders 16. For ease of description, the at least one layer of organic resin substrate is referred to as a third dielectric substrate 23.
In a possible design, space between the surface radiating patches 11 and the inner radiating patches 12 is further filled with an adhesive layer.
An antenna provided in this application is a stacked structure.
For the antenna shown in
In a possible design, based on a thickness requirement of a dielectric between the surface radiating patches 11 and the inner radiating patches 12, space between the surface radiating patches 11 and the inner radiating patches 12 may be further filled with at least one layer of organic resin substrate.
In a possible design, space between the inner radiating patches and the second dielectric substrate 22 is further filled with at least one layer of organic resin substrate configured to carry the antenna feeders.
Referring to
The foregoing two antennas shown in
It should be specially noted that, in the foregoing two antennas in the examples of this application, the first dielectric substrate 21 uses a low dielectric material, but has a higher coefficient of thermal expansion than the organic resin substrate, and the second dielectric substrate 22 uses a low thermal expansion material, and has a lower coefficient of thermal expansion than the organic resin substrate. In this stacked structure design, an overall coefficient of thermal expansion of all dielectric substrates in the stacked structure of the antenna can be decreased to match a coefficient of thermal expansion of a chip package substrate (whose material is usually organic resin). This addresses a severe mismatch, between a coefficient of thermal expansion of the stacked layer and the coefficient of thermal expansion of the chip package substrate, that occurs when the stacked layer between the surface radiating patches 11 and the inner radiating patches 12 uses a low dielectric material such that the low dielectric material is applicable to chip packaging. On this basis, the first dielectric substrate 21 between the surface radiating patches 11 and the inner radiating patches 12 uses a low dielectric material. This helps reduce a total thickness of the substrate between the surface radiating patches 11 and the inner radiating patches 12, to meet a requirement for installing a millimeter-wave antenna in narrow space, implement packaging of the antenna on the chip package substrate, and meet a requirement for high performance of the millimeter-wave band antenna.
The stacked layer designs of the foregoing two antennas reduce a quantity of layers and a total thickness of organic substrates between the surface radiating patches 11 and the inner radiating patches 12, and also help shorten a processing technique process of an entire package substrate, shorten a processing period of the substrate, and reduce costs.
In this application, the inner radiating patches 12 are main radiating patches, and are configured to radiate and receive an electromagnetic wave signal. The surface radiating patches 11 are parasitic radiating patches, and have a function of increasing antenna bandwidth. The surface radiating patches 11 are arranged in an N×N array on the first dielectric substrate 21, and the inner radiating patches 12 are distributed in an N×N array on the second dielectric substrate 22, where N is a positive integer greater than 1. As shown in
A material of the substrate between the two layers of radiating patches is a low dielectric material, and has a lowest dielectric constant and dielectric loss in materials of substrates of the entire stacked structure. This helps reduce a distance between the surface radiating patches 11 and the inner radiating patches 12. Therefore, the stacked structure of the radiating patches of the antenna and the low dielectric material of the stacked layer between the radiating patches of the antenna bring about high bandwidth and high gain of the stacked structure of the antenna. Optionally, as shown in
Because a dielectric constant of the material of the substrate between the surface radiating patches 11 and the inner radiating patches 12 has relatively significant impact on a radio frequency signal, in this application, material selection for the first dielectric substrate 21 between the surface radiating patches 11 and the inner radiating patches 12 may focus more on a low dielectric constant. Because impact of a dielectric constant of a material of a substrate that is not between the surface radiating patches 11 and the inner radiating patches 12 on the radio frequency signal is far less than that of the material of the substrate between the surface radiating patches 11 and the inner radiating patches 12, the material of the substrate that is not between the surface radiating patches 11 and the inner radiating patches 12 may not necessarily be a low dielectric constant material. To match the coefficient of thermal expansion of the chip package substrate, when the material of the first dielectric substrate 21 between the surface radiating patches 11 and the inner radiating patches 12 is a low dielectric material, and a coefficient of thermal expansion of the first dielectric substrate 21 is far higher than that of the chip package substrate, material selection for the second dielectric substrate 22 that is not between the surface radiating patches 11 and the inner radiating patches 12 may focus more on a coefficient of thermal expansion.
In a possible design, the dielectric constant of the first dielectric substrate 21 is lower than 3.6, and a dielectric constant of the second dielectric substrate 22 is usually 3.6-4.8.
For example, the material of the first dielectric substrate 21 is PTFE or a PTFE composite material including fiberglass cloth.
The dielectric constant of the material of the first dielectric substrate is 2-2.5. PTFE has a very low dielectric constant and dielectric loss in a relatively wide frequency range, and relatively high breakdown voltage, volume resistivity, and arc resistance. To meet a performance requirement of the antenna, when a PTFE material of a specific thickness is used as a dielectric material between the surface radiating patches 11 and the inner radiating patches 12, the distance between the surface radiating patches 11 and the inner radiating patches 12 may be reduced to 100-300 μm.
Usually, during antenna manufacturing, PTFE is not selected as a material for the organic substrate between the surface radiating patches 11 and the inner radiating patches 12 to reduce the total board thickness of the organic substrate between the surface radiating patches 11 and the inner radiating patches 12. A reason is as follows. A dielectric constant of PTFE is approximately 2.17, and if PTFE is used as the material of the organic substrate, theoretically, the distance between the surface radiating patches 11 and the inner radiating patches 12 can be reduced. However, a coefficient of thermal expansion (CTE) of PTFE is usually higher than 20 PPM/° C., and a CTE value of a radio frequency processing chip 32 (IC) is 3-4 PPM/° C. If the material of the organic substrate between the surface radiating patches 11 and the inner radiating patches 12 is PTFE, an overall CTE of an antenna package is greatly increased (which affects expansion in a non-thickness direction). Consequently, the IC is unstable. Under an effect of overall thermal expansion of the package, a connection pin of the IC may be unsoldered. This causes a component to be disconnected. Therefore, PTFE with a low dielectric constant is usually not used for chip packaging.
To address a current severe mismatch between a low dielectric material and the radio frequency processing chip 32 due to a coefficient of thermal expansion, in this application, a material of the second dielectric substrate 22 is a material with a low coefficient of thermal expansion, to support overall rigidity of all package substrates of a stacked structure of an array antenna and maintain a relatively low overall CTE of all the package substrates, to better match the radio frequency processing chip 32 and a simultaneous multithreading (SMT) motherboard (PCB). Further, the low dielectric material is applicable to chip packaging. This helps reduce the total thickness of the substrate between the surface radiating patches 11 and the inner radiating patches 12, to meet a requirement for high performance of a millimeter-wave band antenna.
In a possible design, a coefficient of thermal expansion of the material of the second dielectric substrate 22 is 0.7-10 PPM/° C.
For example, the material of the first dielectric substrate 21 is PTFE, and a coefficient of thermal expansion of the material of the first dielectric substrate 21 is at least approximately 20 PPM/° C. When the coefficient of thermal expansion of the material of the second dielectric substrate 22 is 0.7-10 PPM/° C., an overall coefficient of thermal expansion of the stacked structure of the antenna may be decreased to 4-8 PPM/° C. In addition, the coefficient of thermal expansion of the radio frequency processing chip 32 is 3-4 PPM/° C. This helps increase a degree of matching between the overall coefficient of thermal expansion of the stacked structure of the antenna and the coefficient of thermal expansion of the radio frequency processing chip 32.
In a possible design, the material of the second dielectric substrate 22 is a BT resin substrate material, or a glass epoxy multilayer material with a high glass transition temperature.
The BT resin substrate material is thermosetting resin formed by adding a modifying component such as epoxy resin, polyphenyl ether (PPE) resin, or allyl compound to main resin components including bismaleimide (BMI) and triazine, and is referred to as BT resin.
The glass epoxy multilayer material with the high glass transition temperature (Tg) is a halogen-free environment-friendly high Tg multilayer material with high elasticity and low thermal expansion. For the glass epoxy multilayer material, high elasticity can greatly reduce warpage of the substrate, and excellent punch processing performance can reduce technique costs. The glass epoxy multilayer material has no halogen-flame retardant, antimony, and red phosphorus, flame retardant performance of the glass epoxy multilayer material reaches a UL94V-0 level, and the glass epoxy multilayer material is an environmental-friendly material.
Optionally, the material of the second dielectric substrate 22 may be BT resin whose model is HL832NSF, where a coefficient of thermal expansion of the BT resin is 3 PPM/° C., or the material of the second dielectric substrate 22 may be BT resin of another model, where a coefficient of thermal expansion of the BT resin is 1-10 PPM/° C.
Optionally, the material of the second dielectric substrate 22 may be a high Tg glass epoxy multilayer material in an MCL-E-700G® series, where a coefficient of thermal expansion of the high Tg glass epoxy multilayer material is 0.7-3 PPM/° C.
For example, a coefficient of thermal expansion of a high Tg glass epoxy multilayer material whose model is MCL-E-705G® is 3.0-2.8 PPM/° C., a coefficient of thermal expansion of a high Tg glass epoxy multilayer material whose model is MCL-E-770G® is 1.8 PPM/° C., and a coefficient of thermal expansion of a high Tg glass epoxy multilayer material whose model is MCL-E-770G® is 0.7 PPM/° C.
The third dielectric substrate 23 is also a stacked structure, and a material of the third dielectric substrate 23 is an organic resin material used for conventional packaging, where a coefficient of thermal expansion of the material is 20 PPM/° C., and a dielectric constant of the material is higher than 3.6. In a possible design, the third dielectric substrate 23 includes M organic layers that are stacked, where M is a positive integer greater than 1. The third dielectric substrate 23 is a multilayer board structure, and an actual quantity of layers of organic resin substrates in the third dielectric substrate 23 may be adjusted based on a performance requirement of the antenna. For example, the third dielectric substrate 23 shown in
In a possible design, the third dielectric substrate 23 is further configured to carry a ground layer 51 and a shield layer 52, where the shield layer 52 and the ground layer 51 are alternately disposed.
This application further provides a communications apparatus, including a processor, a transceiver, and a memory, and further including the antenna in the foregoing embodiments. The processor, the transceiver, and the memory are connected through a bus. There are one or more transceivers. The transceiver includes a receiver and a transmitter, and the receiver and the transmitter are connected to the antenna.
Optionally, the receiver and the transmitter may be integrated on a radio frequency processing chip. The radio frequency processing chip is configured to provide active excitation, and perform amplitude and phase adjustment on a radio frequency signal that is from the receiver or to be sent to the transmitter. In this case, as shown in
The antenna provided in the embodiments of this application is a stacked structure, and mainly includes the first dielectric substrate 21, the second dielectric substrate 22, and the third dielectric substrate 23. A stacked layer between the surface radiating patches and the inner radiating patches is mainly the first dielectric substrate 21, and stacked layers below the inner radiating patches are mainly the second dielectric substrate 22 and the third dielectric substrate 23. Based on the foregoing embodiments, the first dielectric substrate uses a low dielectric material, the second dielectric substrate uses a low thermal expansion material, and the third dielectric substrate uses related content of an organic resin substrate used for conventional chip packaging. This can greatly reduce a thickness of the stacked layer between the surface radiating patches and the inner radiating patches, and help meet a requirement for high performance of a millimeter-wave band antenna. Further, in the embodiments of this application, the first dielectric substrate 21 uses a low dielectric material, but has a relatively high coefficient of thermal expansion, the second dielectric substrate 22 uses a material with a low coefficient of thermal expansion, and the third dielectric substrate 23 uses a conventional organic resin material used for packaging. In this stacked structure design, the overall coefficient of thermal expansion of all the dielectric substrates of the stacked structure of the antenna may be decreased, to address a severe mismatch, between the coefficient of thermal expansion of the radio frequency processing chip and a coefficient of thermal expansion of the stacked layer between the surface radiating patches and the inner radiating patches, that occurs because the stacked layer uses a low dielectric material such that the low dielectric material is applicable to chip packaging. On this basis, the first dielectric substrate 21 between the surface radiating patches and the inner radiating patches uses a low dielectric material. This helps reduce a total thickness of the substrate between the surface radiating patches and the inner radiating patches, to meet a requirement for installing a millimeter-wave antenna in narrow space, implement packaging of the antenna on the chip package substrate, and meet a requirement for high performance of the millimeter-wave band antenna.
When the antenna shown in
The stacked layer design of the antenna in the embodiments of this application reduce a quantity of layers and a total thickness of organic substrates between the surface radiating patches and the inner radiating patches, and also help shorten a processing technique process of an entire package substrate of the antenna, shorten a processing period of the substrate, and reduce costs.
The communications apparatus may be a network device, including but not limited to a base station (for example, a NodeB, an evolved NodeB (eNodeB), a gNodeB in a 5G communications system, a base station or network device in a future communications system, an access node in a WI-FI system, a wireless relay node, or a wireless backhaul node) and the like. Alternatively, the communications apparatus may be a radio controller in a cloud radio access network (CRAN) scenario. Alternatively, the communications apparatus may be a network device on a 5G network or a network device on a future evolved network. Alternatively, the communications apparatus may be a wearable device, a vehicle-mounted device, or the like. Alternatively, the communications apparatus may be a small cell, a transmission node (transmission/reception point (TRP)), or the like. Definitely, this application is not limited thereto.
The communications apparatus may be a terminal. The terminal is a device having a wireless transceiver function. The terminal may be deployed on land, including an indoor or outdoor device, a handheld device, a wearable device, or a vehicle-mounted device, or may be deployed on the water (for example, a ship), or may be deployed in the air (for example, on an airplane, a balloon, or a satellite). The terminal may be a mobile phone, a tablet (e.g., IPAD), a computer having a wireless transceiver function, a VR terminal device, an augmented reality (AR) terminal device, a wireless terminal in industrial control, a wireless terminal in self driving, a wireless terminal in telemedicine (remote medical), a wireless terminal in a smart grid, a wireless terminal in transportation safety, a wireless terminal in a smart city, a wireless terminal in a smart home, or the like. An application scenario is not limited in the embodiments of this application. Sometimes, the terminal device may also be referred to as a user equipment (UE), an access terminal device, a UE unit, a UE station, a mobile station, a remote station, a remote terminal device, a mobile device, a UE terminal device, a terminal device, a wireless communications device, a UE agent, a UE apparatus, or the like.
For example, the communications apparatus in this application may be the terminal in the system shown in
For example, the communications apparatus in this application may be a base station (eNodeB) shown in
Specific structures of the BBU and the RRU may be further shown in
For example, the communications apparatus in this application may be a terminal device shown in
The processor may include a circuit used for audio/video and logical functions of the terminal device. For example, the processor may include a digital signal processor device, a microprocessor device, an AD converter, a DA converter, and the like. Control and signal processing functions of a mobile device may be allocated to these devices based on capabilities of these devices. The processor may further include an internal voice coder (VC), an internal data modem (DM), and the like. In addition, the processor may include a function of operating one or more software programs. The software programs may be stored in a memory. Usually, the processor and a stored software instruction may be configured to enable the terminal device to perform an action. For example, the processor can operate a connection program.
The terminal shown in
The terminal shown in
The terminal shown in
Although the present disclosure is described with reference to specific features and the embodiments thereof, it is clear that various modifications and combinations may be made to them without departing from the spirit and scope of the present disclosure. Correspondingly, the specification and accompanying drawings are merely example description of the present disclosure defined by the accompanying claims, and are considered as any of or all modifications, variations, combinations or equivalents that cover the scope of the present disclosure. It is clear that a person skilled in the art may make various modifications and variations to the present disclosure without departing from the spirit and scope of the present disclosure. The present disclosure is intended to cover these modifications and variations provided that they fall within the scope of protection defined by the following claims and their equivalent technologies.
| Number | Date | Country | Kind |
|---|---|---|---|
| 201810213756.2 | Mar 2018 | CN | national |
This is a continuation of U.S. patent application Ser. No. 17/020,022, filed on Sep. 14, 2020, which is a continuation of International Patent Application No. PCT/CN2018/120156, filed on Dec. 10, 2018, which claims priority to Chinese Patent Application No. 201810213756.2 filed on Mar. 15, 2018. All of the aforementioned patent applications are hereby incorporated by reference in their entireties.
| Number | Date | Country | |
|---|---|---|---|
| Parent | 17020022 | Sep 2020 | US |
| Child | 17696100 | US | |
| Parent | PCT/CN2018/120156 | Dec 2018 | US |
| Child | 17020022 | US |
