Patent Application
20250192428
The present disclosure relates to an antenna device.
In contemporary society, the application of wireless communication technology has become ubiquitous. The provision of wireless local area networks has become an essential facility in major urban centers and public spaces, with many individuals also establishing their own wireless networks within their domiciles. Concomitant with the advancement of wireless communication technology, numerous manufacturers have dedicated their efforts to the development of antenna devices with enhanced performance capabilities. Presently, antenna devices incorporate intricate internal circuit designs, involving diverse signal types. In the event that the signal lines are in excessively close proximity to one another, there exists a heightened probability of signal interference, potentially resulting in a detrimental impact on the performance efficacy of the antenna device.
The present disclosure provides an antenna device that mitigates the issue of signal interference.
At least one embodiment of the present disclosure provides an antenna device, including a transparent substrate and multiple antenna units disposed on the transparent substrate. Each antenna unit includes an antenna electrode, a ground electrode, a thin-film circuit structure, a redistribution structure, and a chip. The antenna electrode is disposed on a first surface of the transparent substrate. The ground electrode is disposed on a second surface of the transparent substrate opposite to the first surface. The thin-film circuit structure is disposed on the ground electrode and includes a digital signal line. The redistribution structure is disposed on the thin-film circuit structure and includes a digital signal pad electrically connected to the digital signal line, an analog signal line, an analog signal pad electrically connected to the analog signal line, a radio frequency (RF) signal line, a radio frequency (RF) signal pad electrically connected to the RF signal line, and an antenna signal pad electrically connected to the antenna electrode. The chip is bonded to the digital signal pad, the analog signal pad, the RF signal pad, and the antenna signal pad. The digital signal pad and the analog signal pad are disposed in a first bonding area. The RF signal pad and the antenna signal pad are disposed in a second bonding area separated from the first bonding area.
At least one embodiment of the present disclosure provides an antenna device, including a transparent substrate and multiple antenna units disposed on the transparent substrate. Each antenna unit includes an antenna electrode, a ground electrode, a thin-film circuit structure, a redistribution structure, and a chip. The antenna electrode is disposed on a first surface of the transparent substrate. The ground electrode is disposed on a second surface of the transparent substrate opposite to the first surface. The thin-film circuit structure is disposed on the ground electrode. The redistribution structure is disposed on the thin-film circuit structure and includes a first ground structure, a second ground structure separated from the first ground structure, a dielectric layer, a first pad, and a second pad. The first ground structure and the second ground structure overlap with the ground electrode. The dielectric layer is disposed on the first ground structure and the second ground structure. The first pad and the second pad are disposed on the dielectric layer. The first pad overlaps with the first opening of the first ground structure. The second pad overlaps with a second opening in the second ground structure. The first ground structure and the first pad overlap with a first bonding area. The second ground structure and the second pad overlap with a second bonding area separated from the first bonding area. The chip overlaps with both the first bonding area and the second bonding area, and is bonded to the first pad and the second pad.
The transparent substrate 100 has a first surface S1 and a second surface S2 opposite to the first surface S1. In some embodiments, the material of the transparent substrate 100 includes glass, quartz, organic polymer, or other applicable materials. In some embodiments, the thickness of the transparent substrate 100 ranges from 0.15 mm to 1.1 mm. For example, the thickness of the transparent substrate 100 may be 0.5 mm, 0.7 mm, or 1.1 mm.
Each antenna unit 10A includes an antenna electrode 110, a ground electrode 132, a thin-film circuit structure 200, a redistribution structure 300, and a chip 410.
The antenna electrode 110 is disposed on the first surface S1 of the transparent substrate 100.
The ground electrode 132 is disposed on the second surface S2 of the transparent substrate 110. In the present embodiment, the ground electrode 132 has at least one opening 132h, and each opening 132h has a bonding structure 134. The bonding structure 134 is electrically connected to the antenna electrode 110 through the substrate conductive via 120. Consequently, the antenna signal of the antenna electrode 110 may be transmitted through the bonding structure 134 and the substrate conductive via 120. In alternative embodiments, the substrate conductive via 120 may be omitted, and the antenna signal of the antenna electrode 110 may be transmitted by means of radiation between the antenna electrode and the driving electrode (not shown) overlapping with the opening 132h.
In some embodiments, the materials of the antenna electrode 110, the ground electrode 132, the bonding structure 134, and the substrate conductive via 120 include, but are not limited to, copper (Cu), aluminum (Al), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), tungsten (W), conductive oxides (such as indium tin oxide, indium zinc oxide, etc.), or other suitable materials, or a combination thereof.
In some embodiments, the method of forming the substrate conductive via 120 includes a glass modification process and a conductive material filling process. By way of example, a laser is initially utilized to create a through-hole in the transparent substrate 100, followed by a wet etching process to enlarge the aforementioned through-hole, thereby forming a via extending from the first surface S1 to the second surface S2. Finally, conductive material is filled into the via to form the substrate conductive via 120. In some embodiments, the angle between the sidewall of the substrate conductive via 120 and either the first surface S1 or the second surface S2 (i.e., the inclination angle of the sidewall of the substrate conductive via 120) ranges from 88 degrees to 90 degrees.
In some embodiments, the method of forming the antenna electrode 110, the ground electrode 132, the bonding structure 134, and the substrate conductive via 120 include initially depositing a seed layer on the first surface S1 and second surface S2 of the transparent substrate 100, as well as within the via in the substrate, by means of sputtering, electroless plating, or other suitable processes. Subsequently, a metal layer is formed on the seed layer utilizing an electroplating process. The resultant seed layer and metal layer may be patterned through photolithographic and etching processes to obtain the antenna electrode 110, the ground electrode 132, and the bonding structure 134. In alternative embodiments, the seed layer may be omitted.
The buffer layer 140 is disposed on the transparent substrate 100, the ground electrode 132, and the bonding structure 134. In some embodiments, the buffer layer 140 includes transparent materials, such as organic materials (e.g., polyimide, polyethylene terephthalate, epoxy resin, etc.) or inorganic materials (e.g., silicon nitride, silicon oxide, etc.) or a combination thereof. In some embodiments, given that the thickness of the antenna electrode 110, the ground electrode 132, and the bonding structure 134 ranges from 2 micrometers to 10 micrometers, to achieve a planarization effect, the thickness of the buffer layer 140 is preferably between 2 micrometers and 15 micrometers, and the thickness of the buffer layer 140 is not less than that of the ground electrode 132. For instance, the thickness of the buffer layer 140 may be 1.3 times that of the ground electrode 132. To attain this thickness for achieving the planarization effect, it is preferable to select organic materials for the buffer layer 140.
The thin-film circuit structure 200 is disposed on the ground electrode 132 and the bonding structure 134. In the present embodiment, the thin-film circuit structure 200 is disposed on the buffer layer 140. In some embodiments, the overall thickness of the thin-film circuit structure 200 is less than 10 micrometers.
The thin-film circuit structure 200 includes, in sequential deposition order, a first thin-film conductive layer 210, a first dielectric layer 220, a second thin-film conductive layer 230, and a second dielectric layer 240. In some embodiments, at least one contact portion PH1 of the second thin-film conductive layer 230 penetrates through the first dielectric layer 220 and is electrically connected to the first thin-film conductive layer 210. In some embodiments, the thin-film circuit structure 200 may further include additional conductive layers and dielectric layers. The present disclosure does not limit the number of conductive layers and dielectric layers in the thin-film circuit structure 200.
In some embodiments, the materials of the first thin-film conductive layer 210 and the second thin-film conductive layer 230 include copper (Cu), aluminum (Al), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), tungsten (W), conductive oxides (such as indium tin oxide, indium zinc oxide, etc.), or other suitable materials or combinations thereof. The first thin-film conductive layer 210 and the second thin-film conductive layer 230 each possess either a single-layer structure or a multi-layer structure. By way of example, the first thin-film conductive layer 210 and the second thin-film conductive layer 230 each has a molybdenum/aluminum/molybdenum laminated structure, a titanium/aluminum/titanium laminated structure, or other laminated structures composed of conductive materials.
In some embodiments, the materials of the first dielectric layer 220 and the second dielectric layer 240 include organic polymers (such as polyimide, polyethylene terephthalate, etc.) or inorganic materials (such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, hafnium oxide, or other suitable materials, or combinations thereof).
In some embodiments, prior to the formation of the second thin-film conductive layer 230, an opening exposing the first thin-film conductive layer 210 is formed in the first dielectric layer 220 utilizing photolithography and etching processes. Subsequently, the second thin-film conductive layer 230 is deposited within the opening to form a contact portion PH1 of the second thin-film conductive layer 230, thereby enabling the second thin-film conductive layer 230 to make contact with the first thin-film conductive layer 210. In some embodiments, the angle between the sidewall and the bottom surface of the contact portion PH1 (i.e., the inclination angle of the sidewall of the contact portion PH1) ranges from 50 degrees to 70 degrees.
The redistribution structure 300 is disposed on the thin-film circuit structure 200. In this embodiment, the redistribution structure 300 is disposed on the second dielectric layer 240.
The redistribution structure 300 includes, in sequential deposition order, a first redistribution layer 310, an insulating layer 320, and a second redistribution layer 330. In some embodiments, at least one contact portion PH2 of the first redistribution layer 310 penetrates through the second dielectric layer 240 and is electrically connected to the second thin-film conductive layer 230. In some embodiments, the first redistribution layer 310 and/or the second redistribution layer 330 are electrically connected to the ground electrode 132 and the bonding structure 134 through the conductive via LH1. The conductive via LH1 penetrates the thin-film circuit structure 200 and the buffer layer 140, and optionally penetrates the insulating layer 320. In some embodiments, the second redistribution layer 330 is electrically connected to the first redistribution layer 310 through at least one conductive via LH2 in the insulating layer 320. The redistribution structure 300 may further include additional conductive layers and insulating layers, and the present disclosure does not limit the number of conductive layers and insulating layers in the redistribution structure 300.
In some embodiments, the materials of the first redistribution layer 310 and the second redistribution layer 330 include copper (Cu), aluminum (Al), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), tungsten (W), conductive oxides (such as indium tin oxide, indium zinc oxide, etc.), or other suitable materials or combinations thereof. In some embodiments, each of the first redistribution layer 310 and the second redistribution layer 330 includes a seed layer and a metal layer formed thereon. The seed layer may be formed by methods such as sputtering, electroless plating, or other suitable techniques, while the metal layer is formed by electroplating. In some embodiments, the seed layer may be omitted.
In some embodiments, the material of the insulating layer 320 includes organic materials (such as polyimide, polyethylene terephthalate, epoxy resin, etc.) or inorganic materials (such as silicon nitride, silicon oxide, etc.) or a combination thereof. In some embodiments, the method of forming the insulating layer 320 includes adhering a dry film onto the first redistribution layer 310 or coating a liquid organic material (e.g., liquid polyimide (PI) material) onto the first redistribution layer 310.
In some embodiments, the insulating layer 320 possesses high transmittance and low dissipation factor (Df). By way of example, the insulating layer 320 exhibits a transmittance greater than or equal to 90% for light with wavelengths ranging from 400 nm to 800 nm. In some embodiments, the insulating layer 320 has a dielectric constant (Dk) lower than 4 and a dissipation factor lower than 0.004.
In some embodiments, the first redistribution layer 310 of the redistribution structure 300 is configured to transmit ground signals, while the second redistribution layer 330 is configured to transmit chip power signals and radio frequency (RF) signals (e.g., RF input signals (RF_in)). In some embodiments, the first thin-film conductive layer 210 and the second thin-film conductive layer 230 of the thin-film circuit structure 200 have digital signal lines and analog signal lines, which are respectively configured to transmit digital signals and analog signals for controlling the chip 410 or circuits within the circuit structure 200. Due to the lower operating frequencies of the digital and analog signals transmitted within the thin-film circuit structure 200, significant signal loss is not incurred despite the relatively thin-film thicknesses of the first thin-film conductive layer 210, the first dielectric layer 220, the second thin-film conductive layer 230, and the second dielectric layer 240 in the thin-film circuit structure 200. In contrast, as the redistribution structure 300 is utilized for transmitting high-frequency RF signals, the insulating layer 320 in the redistribution structure 300 necessitates a greater thickness. Consequently, the thickness of the insulating layer 320 exceeds that of each of the first dielectric layer 220 and the second dielectric layer 240. In some embodiments, the thickness of the insulating layer 320 ranges from 10 micrometers to 60 micrometers. In some embodiments, the thickness of each of the first dielectric layer 220 and the second dielectric layer 240 ranges from 0.03 micrometers to 1 micrometer, for example, from 0.5 micrometers to 1 micrometer or from 0.7 micrometers to 1 micrometer. In some embodiments, the thickness of each of the first thin-film conductive layer 210 and the second thin-film conductive layer 230 is less than the thickness of each of the first redistribution layer 310 and the second redistribution layer 330. In some embodiments, the thickness of each of the first thin-film conductive layer 210 and the second thin-film conductive layer 230 ranges from 0.01 micrometers to 0.7 micrometers, for example, from 0.01 micrometers to 0.3 micrometers or from 0.01 micrometers to 0.05 micrometers. In some embodiments, the thickness of each of the first redistribution layer 310 and the second redistribution layer 330 ranges from 2 micrometers to 10 micrometers.
In some embodiments, prior to the formation of the first redistribution layer 310, an opening exposing the second thin-film conductive layer 230 is formed in the second dielectric layer 240 using photolithography and etching processes. Subsequently, the first redistribution layer 310 is deposited within the opening to form a contact portion PH2 of the first redistribution layer 310, thereby enabling contact between the first redistribution layer 310 and the second thin-film conductive layer 230. In some embodiments, the angle between the sidewall and the bottom surface of the contact portion PH2 (i.e., the inclination angle of the sidewall of the contact portion PH2) ranges from 50 degrees to 70 degrees.
In some embodiments, prior to the formation of the first redistribution layer 310 or the second redistribution layer 330, a laser drilling process is conducted. For instance, the laser drilling process is performed to create laser holes, which are subsequently filled with the first redistribution layer 310 or the second redistribution layer 330 to form conductive vias LH1 or LH2. In the present embodiment, the conductive via LH2 penetrates the insulating layer 320, and the second redistribution layer 330 contacts the first redistribution layer 310 through the conductive via LH2. The conductive via LH1 penetrates the insulating layer 320, the second dielectric layer 240, the first dielectric layer 220, and the buffer layer 140, enabling the second redistribution layer 330 to contact the ground electrode 132 and the bonding structure 134 through the conductive via LH1. In some embodiments, the angle between the sidewall and the bottom surface of the conductive vias LH1 and LH2 (i.e., the inclination angle of the sidewalls of the conductive vias LH1 and LH2) ranges from 70 degrees to 75 degrees. In this embodiment, due to the distinct formation methods of the contact portions PH1 and PH2, the conductive vias LH1 and LH2, and the substrate conductive via 120, these three elements exhibit different sidewall inclination angles.
The chip 410 is bonded to the second redistribution layer 330. In some embodiments, the antenna electrode 110 has a width that is greater than or equal to the width of chip 410.
In some embodiments, the chip 410 is bonded to the second redistribution layer 330 through the conductive connection structures 412. The conductive connection structure 412 may include, for example, solder, conductive adhesive, or other suitable structures. In some embodiments, the surface of the second redistribution layer 330 may be treated with Electroless Nickel Immersion Gold (ENIG), immersion silver plating, or similar processes to enhance the yield of the chip bonding process. In some embodiments, prior to the chip bonding process, an Organic Solderability Preservative (OSP) or other organic material may be formed on the second redistribution layer 330 to protect the metal pads from corrosion (e.g., sulfidation or oxidation) due to air exposure, thereby improving the yield of the chip bonding process. In some embodiments, the spacing between the conductive connection structure 412 ranges from 100 micrometers to 1000 micrometers.
A bottom fill material 420 is formed between the chip 410 and the second redistribution layer 330. In some embodiments, the bottom fill material 420 is disposed between the chip 410 and the redistribution structure 300, and surrounds the points of contact (i.e., the conductive connection structure 412) between the chip 410 and the redistribution structure 300. In some embodiments, the bottom fill material 420 may include a thermal interface material (TIM) to facilitate heat dissipation from the chip 410. By way of example, the thermal conductivity coefficient of the bottom fill material 420 exceeds 0.3 W/m K.
In some embodiments, the chip 410 includes a Beamformer Integrated Circuit (BFIC) or other active/passive components. In some embodiments, the BFIC includes a variable gain amplifier (VGA); a phase shifter (PS); a signal control and memory circuit; a power amplifier (PA) and/or a low noise amplifier (LNA). In some embodiments, circuits containing active components may be disposed within the thin-film circuit structure 200, thereby reducing the circuits required within the chip 410, thus enabling a reduction in the dimensions of the chip 410. For instance, the signal control and memory circuit of the BFIC may be disposed within the thin-film circuit structure 200. In some embodiments, by incorporating a chip 410 in each antenna unit 10A, the signal path between the chip 410 and the antenna electrode 110 may be shortened. Should a single chip 410 provide signals to multiple antenna electrodes, additional signal paths would be necessary, consequently diminishing the light-transmissive area of the antenna device. In other words, the present embodiment enhances the light-transmissive area of the antenna device 1A by incorporating a chip 410 in each antenna unit 10A.
In some embodiments, an Up/Down Converter (UDC) may be utilized to convert signals of relatively lower frequency (such as signals below 2 GHz or other Intermediate Frequency (IF) or low-frequency signals) into high-frequency Radio Frequency (RF) signals. These high-frequency RF signals are subsequently transmitted to the chip 410.
In the present embodiment, the chip 410 is bonded to multiple pads in the second redistribution layer 330. These pads are configured for transmitting various signals. For instance, ground signals (e.g., AGND, DGND, RF_GND, etc.), power signals (e.g., AVDD, DVDD, etc.), radio frequency (RF) signals, RF enable signals (RF_en), reference voltage signals (Vref), bias regulation signals (Rbias), circuit control signals (e.g., digital signals such as CS, CLK, SDI, SDO, PDI, etc.), and antenna signals (e.g., horizontally polarized electric field antenna signals (RF_out_H), vertically polarized electric field antenna signals (RF_out_V), etc.). In some embodiments, at least a portion of the circuit control signals is provided by an external circuit board (not shown). For example, these signals may be provided by a Field Programmable Gate Array (FPGA) and a power module on the external circuit board.
In some embodiments, the usage descriptions of various signals and the main transmission layers are shown in Table 1.
In some embodiments, to mitigate interference between high-frequency signals and low-frequency signals, the chip pads corresponding to low-frequency signals are aggregated in a first bonding area, while the chip pads corresponding to high-frequency signals are aggregated in a second bonding area, which is segregated from the first bonding area.
The low-frequency signals may be analog signals or digital signals, and include power signals (such as AVDD, DVDD, and the like), radio frequency enable signals (RF_en), reference voltage signals (Vref), bias regulation signals (Rbias), and circuit control signals (such as CS, CLK, SDI, SDO, PDI, and the like), wherein the chip pads corresponding to the aforementioned low-frequency signals (for example, digital signal pads connected to digital signal lines and analog signal pads connected to analog signal lines) are aggregated in the first bonding area.
High-frequency signals include, but are not limited to, RF signals and antenna signals (RF_out). The chip pads corresponding to the aforementioned high-frequency signals (e.g., the RF signal pad connected to the RF signal line and the antenna signal pad connected to the antenna signal line) are aggregated in the second bonding area. For the purposes of this document, low-frequency signals are defined as signals operating at frequencies below 500 MHz, whereas high-frequency signals are defined as signals operating at frequencies above 500 MHz (e.g., 10 GHz to 300 GHz or 10 GHz to 500 GHz).
In some embodiments, the ground signal AGND and the ground signal RF_GND may be utilized for shielding purposes to mitigate signal interference. In some embodiments, a first ground structure for transmitting the ground signal AGND is disposed in the first bonding area, while a second ground structure for transmitting the ground signal RF_GND is disposed in the second bonding area. By maintaining separation between the first ground structure and the second ground structure, further reduction of mutual interference between high-frequency and low-frequency signals may be achieved. Detailed descriptions of the first ground structure and the second ground structure are provided in subsequent embodiments.
In some embodiments, the ground signal DGND is primarily transmitted within the thin-film circuit structure 200, which is primarily utilized for the transmission of low-frequency signals. To mitigate the impact of low-frequency signals on high-frequency signals, it is preferable to position the chip pad corresponding to the ground signal DGND within the first bonding area.
The following must be noted: The embodiments illustrated in
Please refer to
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In this embodiment, the ground electrode 132 includes a block portion 132a and wire portions 132b, 132c, and 132d extending outwardly from the block portion 132a. The block portion 132a overlaps with the antenna electrode 110. In some embodiments, the width of the block portion 132a is greater than or equal to the width of the antenna electrode 110. The wire portion 132b is substantially parallel to the wire portion 132c, and extends from the block portion 132a in opposite directions. The wire portion 132d is substantially perpendicular to the wire portion 132c, and extends from the block portion 132a in two other directions. In some embodiments, the area not covered by the ground electrode 132 is defined as the light-transmitting region of the antenna unit 10B.
Please refer to
In some embodiments, the arrangement sequence of signal lines 211a, 211b, 212, 213, 214, 215, 216, 217, and 218 may be adjusted according to practical requirements. In some embodiments, the signal lines 211a, 211b, 212, 213, 214, 215, 216, 217, and 218 overlap with the ground electrode 132, for instance, with the block portion 132a and the wire portion 132c of the ground electrode 132.
In some embodiments, the signal lines 211a, 211b, 215, 216, 217, and 218 may also be referred to as digital signal lines, whereas signal lines 212, 213, and 214 may also be referred to as analog signal lines.
Please refer to
In some embodiments, the first conductive feature 231a and the first conductive feature 231e are configured to transmit ground signals AGND/DGND. In some embodiments, one or more first conductive features 231e include an extension portion 231a-1, which may extend between two adjacent first conductive features 231c. In the present embodiment, the extension portion 231a-1 is disposed between a first conductive feature 231c designated for transmitting the reference voltage signal Vref and another first conductive feature 231c designated for transmitting the circuit control signal SDO.
Please refer to
The first ground structure 314 and the first transition structures 311b, 311c, 311d, and 311e overlap with the first bonding area BR1. The second ground structure 313 and the second transition structures 312b and 312c overlap with the second bonding area BR2. At least a portion of the first transition structures 311b, 311c, 311d, and 311e is surrounded by the first ground structure 314. More specifically, each of the first transition structures 311b, 311c, 311d, and 311e is either completely or partially surrounded by the first ground structure 314, thereby reducing signal interference on the first transition structures 311b, 311c, 311d, and 311e. Similarly, at least a portion of the second transition structures 312b and 312c is surrounded by the second ground structure 313. More specifically, each of the second transition structures 312b and 312c is either completely or partially surrounded by the second ground structure 313, thereby reducing signal interference on the second transition structures 312b and 312c.
The first ground structure 314 includes the block portion 314a overlapping with the first bonding area BR1 and the wire portion 314b extending outwardly from the block portion 314a. The block portion 314a of the first ground structure 314 overlaps with the block portion 132a of the ground electrode 132 (refer to
In some embodiments, the first ground structure 314 may optionally be connected to one or more extension portions 231a-1 of one or more first conductive features 231a of the second thin-film conductive layer 230 through one or more contact portions PH2-1. The width of the contact portion PH2-1 is less than the width of the contact portion PH2. In some embodiments, the contact portion PH2-1 and the extension portion 231a-1 may be omitted.
The second ground structure 313 includes the block portion 313a overlapping with the second bonding area BR2 and the wire portion 313b extending outwardly from the block portion 313a. The block portion 313a of the second ground structure 313 overlaps with the block portion 132a of the ground electrode 132 (refer to
In this embodiment, the second ground structure 313 is connected to the corresponding first conductive feature 232a through multiple contact portions PH2.
In the present embodiment, the first transition structure 311b overlaps with the first conductive feature 231b and is connected to the first conductive feature 231b through the corresponding contact portion PH2. Multiple first transition structures 311c respectively overlap with multiple first conductive features 231c and are respectively connected to the corresponding first conductive features 231c through the corresponding contact portions PH2. In the present embodiment, the first transition structure 311d overlaps with the first conductive feature 231d and is connected to the corresponding first conductive feature 231d through the corresponding contact portion PH2.
In the present embodiment, the first transition structure 311e overlaps with the first conductive feature 231e and is connected to the corresponding first conductive feature 231e through the corresponding contact portion PH2, thereby connecting to the signal line 213 for transmitting the ground signal DGND through the first conductive feature 231e. In some embodiments, the first transition structure 311e is separated from the first ground structure 314; however, the present disclosure is not limited thereto. In other embodiments, the first transition structure 311e is integrally formed with the first ground structure 314. In other words, the first ground structure 314 is electrically connected to the signal line 213, such that the ground signal AGND on the first ground structure 314 is substantially equivalent to the ground signal DGND on the signal line 213.
In this embodiment, the second transition structure 312b overlaps with the second conductive feature 232b and is connected to the second conductive feature 232b through the corresponding contact portion PH2.
The multiple second transition structures 312c respectively overlap with the multiple bonding structures 134 and are respectively connected to the corresponding bonding structures 134 through corresponding conductive vias LH3a. The conductive via LH3a passes through the second dielectric layer 240, the first dielectric layer 220 and the buffer layer 140.
In some embodiments, the conductive via LH3a is formed utilizing a laser drilling process, and the angle between the sidewall and the bottom surface of the conductive via LH3a (i.e., the inclination angle of the sidewall of the conductive via LH3) is between 70 degrees and 75 degrees.
In the present embodiment, the second ground structure 313 is connected to the ground electrode 132 through multiple conductive vias LH3b. The conductive vias LH3b penetrate the second dielectric layer 240, the first dielectric layer 220, and the buffer layer 140. In some embodiments, the conductive vias LH3b are formed utilizing a laser drilling process, and the angle between the sidewall and the bottom surface of the conductive vias LH3b (i.e., the inclination angle of the sidewall of the conductive vias LH3b) is between 70 degrees and 75 degrees. The conductive vias LH3b are arranged around the conductive via LH3a.
The insulating layer 320 is disposed on the first ground structure 314, the second ground structure 313, the multiple first transition structures 311b, 311c, 311d, 311e, and the multiple second transition structures 312b and 312c.
Please refer to
The multiple first pads 331a are connected to the first ground structure 314 through the corresponding multiple conductive vias LH2a.
The first pad 331b overlaps with the corresponding opening 314h of the first ground structure 314, and is connected to the first transition structure 311b within the aforementioned opening 314h through the corresponding conductive via LH2a, thereby electrically connecting to the first conductive feature 231b through the first transition structure 311b (please refer to
Multiple first pads 331c are respectively overlapped with corresponding multiple openings 314h of the first ground structure 314, and are respectively connected to the first transition structures 311c within the aforementioned multiple openings 314h through corresponding multiple conductive vias LH2a. The multiple first pads 331c are respectively electrically connected to the first conductive features 231c (refer to
The first pad 331d overlaps with the corresponding opening 314h of the first ground structure 314, and is connected to the first transition structure 311d within the aforementioned opening 314h through the corresponding conductive via LH2a. The first pad 331d is electrically connected to the first conductive feature 231d through the first transition structure 311d. In some embodiments, the first pad 331d is utilized for transmitting bias regulation signals (Rbias), and the first pad 331d may also be referred to as an analog signal pad.
The digital signal pad and the analog signal pad are electrically connected to the multiple first transition structures 311c and 311d respectively.
The first pad 331e is connected to the corresponding first transition structure 311e or the first ground structure 314 through the corresponding conductive via LH2a, and is utilized to transmit the ground signal AGND/DGND.
The shielding layer 332a is connected to the second ground structure 313 through corresponding multiple conductive vias LH2a. In this embodiment, each shielding layer 332a is further electrically connected to the second ground structure 313 through multiple conductive vias LH2b, and subsequently electrically connected to the ground electrode 132 through the conductive via LH3b of the second ground structure 313 (please refer to
The second pad 332b overlaps with the corresponding opening 313h of the second ground structure 313, and is connected to the second transition structure 312b within the aforementioned opening 313h through the corresponding conductive via LH2a. The second pad 332b is electrically connected to the second conductive feature 232b through the second transition structure 312b (please refer to
Multiple second pads 332c overlap with corresponding multiple openings 313h of the second ground structure 313, and are respectively connected to multiple second transition structures 312c within the multiple openings 313h through corresponding multiple conductive vias LH2a. The second pads 332c are electrically connected to multiple bonding structures 134 (refer to
In some embodiments, in an orthographic projection, the distance between the center of the antenna signal pad (i.e., the second pad 332c) and the center of the antenna electrode 110 is approximately 800 micrometers. Furthermore, this configuration may reduce the risk of short-circuiting between the antenna signal pad (i.e., the second pad 332c) and other pads.
In alternative embodiments, the second transition structure 312c may be omitted, allowing the conductive via LH2a of the second pad 332c to continuously penetrate through the insulating layer 320, the second dielectric layer 240, the first dielectric layer 220, and the buffer layer 310, and connect to the bonding structure 134. This configuration may reduce impedance variation issues in signal transmission between different conductive layers.
The shielding layer 332a at least partially surrounds the second pad 332c to reduce interference from external signals to the antenna signal (RF_out).
In some embodiments, the conductive vias LH2b of the shielding layer 332a are arranged around the conductive vias LH2a of the second pad 332c, thereby further reducing interference from external signals to the antenna signal (RF_out).
The second pad 332d is connected to the second ground structure 313 through the corresponding conductive via LH2a. In some embodiments, the second pad 332d may be omitted, or the second pad 332d may be connected to the shielding layer 332a.
The chip 410 is bonded to the first pads 331a, 331b, 331c, 331d, the shielding layer 332a, and the second pads 332b, 332c, and 332d. In some embodiments, in an orthographic projection, the RF signal line (i.e., signal line 334) is disposed proximate to one side of the chip 410 (e.g., the upper side), whereas the signal lines 211a, 211b, 212, 213, 214, 215, 216, 217, and 218 are disposed proximate to the other side of the chip 410 (e.g., the lower side).
In this embodiment, the wire portion 313b is electrically connected to the second thin-film conductive layer 230 through multiple conductive vias H1 formed by laser processing. Multiple openings are formed in the first dielectric layer 220 and the second dielectric layer 240 utilizing photolithography and etching processes. Multiple contact portions H2 of the second thin-film conductive layer 230 are respectively filled into the multiple openings of the second dielectric layer 240 and contact the first thin-film conductive layer 210. Multiple contact portions H3 of the first thin-film conductive layer 210 are respectively filled into the multiple openings of the first dielectric layer 220 and contact the wire portion 132b of the ground electrode 132. In this embodiment, each conductive via H1 overlaps with a corresponding contact portion H2 and a corresponding contact portion H3. In some embodiments, the conductive vias H1, the contact portion H2, and the contact portion H3 have different widths. For example, the width of the contact portion H3 is greater than the width of the contact portion H2, and the width of the contact portion H2 is greater than the width of the conductive via H1.
When the frequency of the signal is 30 GHz, the dB value of S11 and the dB value of S21 are shown in Table 2 respectively.
As evidenced by Table 2, it can be ascertained that when the width SW of the wire portion 313b (as illustrated in
Please refer to
One or more signal lines 316 are utilized for transmitting ground signals (DGND) and/or power signals (DVDD). In the present embodiment, the signal line 316 does not extend beneath the chip 410; however, the present disclosure is not limited to this configuration.
The first ground structure 314 is utilized for transmitting the ground signal (AGND). The signal line 333 is employed for transmitting the power signal (AVDD). The first ground structure 314 is electrically connected to the chip 410 through the first pad 331a in the first bonding area BR1. The signal line 333 is electrically connected to the chip 410 through the first pad 331b in the first bonding area BR1.
The second ground structure 313 is utilized for transmitting the ground signal (RF_GND). The signal line 334 is employed for transmitting the RF signal. The second ground structure 313 is electrically connected to the chip 410 through the second pad 332d in the second bonding area BR2. The signal line 334 is electrically connected to the chip 410 through the second pad 332b in the second bonding area BR2. The second pad 332c in the second bonding area BR2 is electrically connected to the chip 410 and the antenna electrode 110, and is utilized for transmitting the antenna signal (RF_out). For instance, two second pads 332c are respectively utilized for transmitting the horizontally polarized electric field antenna signal (RF_out_H) and the vertically polarized electric field antenna signal (RF_out_V). The second pad 332e in the second bonding area BR2 is electrically connected to the chip 410 and the ground electrode 132.
Based on the foregoing, the first ground structure 314, the first pad 331a, and the first pad 331b are disposed within the first bonding area BR1, while the second ground structure 313, the second pad 332b, the second pad 332c, the second pad 332d, and the second pad 332e are disposed within the second bonding area BR2, thereby mitigating interference from other signals to high-frequency signals.
In other embodiments, the first bonding area BR1 and the second bonding area BR2 may also have other shapes.
Each antenna unit 10D includes an antenna electrode 110, a ground electrode 132, a thin-film circuit structure 200D, a redistribution structure 300, and a chip 410.
In this embodiment, each antenna unit 10D includes a thin-film transistor T disposed within the thin-film circuit structure 200D. For instance, in this embodiment, a gate dielectric layer 250 is additionally included between the first dielectric layer 220 and the buffer layer 140. Furthermore, multiple semiconductor layers SM are included between the gate dielectric layer 250 and the buffer layer 140.
The first thin-film conductive layer 210 is disposed on the gate dielectric layer 250 and includes a gate G overlapping with the semiconductor layer SM. The first dielectric layer 220 covers the gate G. The second thin-film conductive layer 230 is disposed on the first dielectric layer 220 and includes multiple sources/drains SD. In the present embodiment, each thin-film transistor T includes a corresponding semiconductor layer SM, a corresponding gate G, and corresponding source/drain SD. In this embodiment, the thin-film transistor T is a top-gate type thin-film transistor; however, the present disclosure is not limited thereto. In other embodiments, the thin-film transistor T is a bottom-gate type thin-film transistor, a dual-gate type thin-film transistor, or other types of thin-film transistors.
The thin-film transistor T is electrically connected to the chip 410 and the digital signal line 219 in the thin-film circuit structure 200D. The thickness of the digital signal line 219 is less than the thickness of the signal line 334 (RF signal line). The digital signal line 219 is utilized, for example, to transmit any of the digital signals described in the preceding embodiments.
In this embodiment, the redistribution structure 300 further includes a pad P. The pad P is utilized, for example, to connect an external flexible circuit board.
In the present embodiment, the first thin-film conductive layer 210 and/or the second thin-film conductive layer 230 includes one or more digital signal lines GL and DL, which are utilized for transmitting digital signals to each antenna unit. A portion of the digital signal lines DL extend horizontally across multiple antenna units. A portion of the digital signal lines GL extend vertically across multiple antenna units. In the present embodiment, the digital signal lines GL are, for example, employed to control the gate G of the thin-film transistor T within the antenna unit (please refer to
The RF input signal (RF_in) is transmitted to multiple antenna units 10D through the signal line 334 in the second redistribution layer 330.
The ground signal (AGND) and the ground signal (RF_GND) are respectively transmitted to multiple antenna units through the first ground structure 314 and the second ground structure 313 in the first redistribution layer 310.
The power signal (AVDD) is transmitted to multiple antenna units through the signal line 333 of the second redistribution layer 330.
In the present embodiment, ground signals (e.g., AGND, RF_GND, etc.), power signals (e.g., AVDD, DVDD, etc.), the RF signal, the RF enable signal (RF_en), the reference voltage signal (Vref), and various circuit control signals (e.g., CS, CLK, SDI, SDO, PDI, etc.) are connected to the chip 410.
In the present embodiment, the circuit control signal is provided to the signal control circuit module SCC and the memory circuit module MC within the chip 410. The signal control circuit module SCC provides signals to the variable gain amplifier and phase shifter module VGPS.
In the present embodiment, the RF signal, after being processed by the power divider, is provided to the variable gain amplifier and phase shifter module VGPS. The variable gain amplifier and phase shifter module VGPS subsequently supplies the signal to the power amplifier and/or low loss amplifier module PALNA.
The power amplifier and/or low loss amplifier module PALNA provides a first antenna signal (e.g., a horizontally polarized electric field antenna signal (RF_out_H)) and a second antenna signal (e.g., a vertically polarized electric field antenna signal (RF_out_V)) to the antenna electrode 110.
In some embodiments, additional passive components PD may be incorporated within the antenna unit 10, such as inductors, capacitors, and/or resistors. The passive components are connected to the power amplifier and/or the low loss amplifier module PALNA of the chip 410.
In view of the foregoing, the present disclosure mitigates interference with high-frequency signals by segregating the pads for high-frequency signals from those designated for low-frequency signals.
| Number | Date | Country | Kind |
|---|---|---|---|
| 113127157 | Jul 2024 | TW | national |
This application claims the priority benefit of U.S. Provisional Patent Application No. 63/606,806, filed on Dec. 6, 2023 and Taiwan Application No. 113127157, filed on Jul. 19, 2024. The entirety of each of the above-mentioned patent applications is hereby incorporated by reference herein and made a part of this specification.
| Number | Date | Country | |
|---|---|---|---|
| 63606806 | Dec 2023 | US |
