This application claims priority to Japanese Patent Application No. 2022-170676 filed on Oct. 25, 2022, the entire contents of which are incorporated by reference herein.
The present disclosure relates to an antenna module.
Conventionally, as antenna modules, an antenna module described in International Publication WO 2018/074377 A is known. This antenna module includes a dielectric layer provided with power feeding electrodes, and a dielectric layer provided with another circuit (high-pass filter circuit).
An antenna module according to one aspect of the present disclosure is an antenna module including at least a first radiation electrode, and a first power feeding electrode coupled with the first radiation electrode, and includes: a first dielectric layer including the first power feeding electrode; and a second dielectric layer disposed at one side of the first dielectric layer in a thickness direction of the first power feeding electrode, and a fracture toughness value of the second dielectric layer is larger than a fracture toughness value of the first dielectric layer.
Here, the above-described antenna module causes a problem that, when chipping or the like occurs in the dielectric layer, an external appearance is impaired.
It is therefore an object of the present disclosure to provide an antenna module that has a good external appearance.
According to one aspect of the present disclosure, it is possible to provide an antenna module that has a good external appearance.
Hereinafter, some embodiment of the present disclosure will be described in detail. In this regard, the present disclosure is not limited to the following embodiment.
Hereinafter, the embodiment of the present disclosure will be described in detail with reference to the accompanying drawings.
As illustrated in
The antenna layer ANT includes the dielectric layers 2 and 3, and a radiation electrode 10A (first radiation electrode) and a radiation electrode 10B (second radiation electrode) buried in the dielectric layer 3. In the present embodiment, the radiation electrodes 10A and 10B are disposed in the dielectric layer 3. Furthermore, in plan view seen from a lamination direction (z direction), the antenna layer ANT includes a plurality of ground conductors 11A that surround the radiation electrode 10A, and a plurality of ground conductors 11B that surround the radiation electrode 10B. The ground conductors 11A and 11B are columnar conductors that extend in the z direction so as to penetrate the dielectric layer 2. The plurality of ground conductors 11A are connected to a ring-shaped ground ring 12A on a predetermined xy plane, and the plurality of ground conductors 11B are connected to a ring-shaped ground ring 12B on the predetermined xy plane. Power feeding electrodes to be described later are provided in a space surrounded by the plurality of ground conductors 11A and 11B. In this way, the ground conductors 11A are disposed around the radiation electrode 10A and power feeding electrodes 13V and 13H. The ground conductors 11B are disposed around the radiation electrode 10B and power feeding electrodes 14V and 14H. End parts on a positive side in the z direction of the plurality of ground conductors 11A and 11B are covered with the dielectric layer 3.
The distribution layer DIV includes the dielectric layer 2 and a conductor pattern buried in the dielectric layer 2. The filter layer FIL includes the dielectric layer 4, and a conductor pattern that is buried in the dielectric layer 4. Details of the filter layer FIL and the distribution layer DIV will be described later. The filter layer FIL constitutes a mounting surface for the motherboard. Signal terminals 40V and 40H and a plurality of ground terminals 40G are provided on the mounting surface. The signal terminal 40V is a terminal for inputting/outputting a vertical polarization antenna signal, and the signal terminal 40H is a terminal for inputting/outputting a horizontal polarization antenna signal. A ground potential is applied to the ground terminals 40G.
As illustrated in
The filter layer FIL is provided with a filter circuit pattern 30V. The filter circuit pattern 30V is a band-pass filter, and is connected to the signal terminal 40V. The filter circuit pattern 30V is surrounded by a plurality of ground conductors 31 in plan view seen from the lamination direction. The ground conductor 31 is a columnar conductor that extends in the z direction so as to penetrate the dielectric layer 4. Although not illustrated in
The distribution layer DIV is provided with a distribution circuit pattern 20V. The distribution circuit pattern 20V is a circuit that distributes to the radiation electrodes 10A and 10B an antenna signal fed from the filter circuit pattern 30V. The distribution circuit pattern 20V is surrounded by a plurality of ground conductors 21 in plan view seen from the lamination direction. The ground conductor 21 is a columnar conductor that extends in the z direction so as to penetrate the dielectric layer 2. Although not illustrated in
As illustrated in
Similarly, the power feeding electrodes 14V and 14H (second power feeding electrodes) that overlap the radiation electrode 10B seen from the z direction are provided in a space surrounded by the plurality of ground conductors 11B. The power feeding electrodes 14V and 14H are coupled with the radiation electrode 10B. The dielectric layer 2 includes the power feeding electrodes 14V and 14H. Among these electrodes, the power feeding electrode 14V is a conductor pattern whose longitudinal direction is the y direction, and supplies the vertical polarization antenna signal SV to the radiation electrode 10B. On the other hand, the power feeding electrode 14H is a conductor pattern whose longitudinal direction is the x direction, and supplies the horizontal polarization antenna signal SH to the radiation electrode 10B. The power feeding electrodes 14V and 14H are located at positions close to one end parts of the conductor patterns, and receive supply of the antenna signals via the filter circuit pattern 30 and the distribution circuit pattern 20V (see
Ground electrodes G1 to G3 of large areas are provided below the antenna layer ANT. The ground electrodes G1 to G3 are disposed at a negative side in the z direction with respect to the power feeding electrodes 13V and 13H and the power feeding electrodes 14V and 14H. A region sandwiched between the ground electrode G1 and the ground electrode G2 is the distribution layer DIV. The ground electrode G1 and the ground electrode G2 are connected by the plurality of ground conductors 21. Here, in plan view seen from the z direction, each of the ground electrodes G1 and G2 includes a region S1 that overlaps a space surrounded by the plurality of ground conductors 11A, a region S2 that overlaps a space surrounded by the plurality of ground conductors 11B, and a region S3 that connects the region S1 and the region S2. Furthermore, the width in the y direction of the region S3 is narrower than the widths in the y direction of the regions S1 and S2. Consequently, mutual interference between the radiation electrodes 10A and 10B via the ground electrodes G1 and G2 is reduced, so that it is possible to enhance independence of the radiation electrode 10A and the radiation electrode 10B.
A region sandwiched between the ground electrode G1 and the ground electrode G3 is the filter layer FIL. The ground electrode G1 and the ground electrode G3 are connected by the plurality of ground conductors 31. The width in the y direction of the ground electrode G3 may be fixed.
The position of the radiation electrode 10A in the dielectric layer 3 will be described with reference to
Next, the dielectric layers 2, 3, and 4 will be described with reference to
A dielectric material that forms the dielectric layer 4 may have a higher permittivity than that of a dielectric material that forms the dielectric layer 2. A dielectric material that forms the dielectric layer 3 may be the same as a dielectric material that forms the dielectric layer 4.
A fracture toughness value of the dielectric layer 3 is larger than a fracture toughness value of the dielectric layer 2. Furthermore, a fracture toughness value of the dielectric layer 4 is larger than the fracture toughness value of the dielectric layer 2. Fracture toughness refers to characteristics indicating how much a material can resist when cracks are produced in the material and develop. Fracture toughness is generally regarded as toughness. A method for measuring a fracture toughness value of fine ceramic is defined in “JIS R 1607”. The fracture toughness value of the dielectric layer 2 may be in the range of 0.5 to 2.5. The fracture toughness values of the dielectric layers 3 and 4 may be 1.5 times to 2.5 times larger than the fracture toughness value of the dielectric layer 2. Note that, although the fracture toughness value may be obtained by directly measuring a product of the antenna module 1, the fracture toughness value may be obtained by making a dielectric layer for measurement based on a composition obtained by analyzing components of the dielectric layer, and measuring the made dielectric layer instead of directly measuring a product depending on a product size.
The Young's modulus of the dielectric layer 3 is larger than the Young's modulus of the dielectric layer 2. Furthermore, the Young's modulus of the dielectric layer 4 is larger than the Young's modulus of the dielectric layer 2. The “Hooke's law” according to material mechanics determines that there is a proportional relationship between stress and strain, and a relational expression of “σ=Eε” holds when the Young's modulus is E, normal stress is σ, and normal strain is ε. A large Young's modulus indicates that rigidity is high (deformation hardly occurs) and machining accuracy improves. The Young's modulus of the dielectric layer 2 may be in the range of 30 to 80. The Young's moduli of the dielectric layers 3 and 4 may be 1.5 times to 4 times larger than the Young's modulus of the dielectric layer 2.
A ceramic material is adopted as a material of the dielectric layers 2, 3, and 4. The dielectric layers 2, 3, and 4 may be made of Low-Temperature Fired Ceramic (LTCC). As a method of increasing the fracture toughness value of the dielectric layer, there are a method for reducing pores in a ceramic material used for the dielectric layer and increasing the density, a method for using for a dielectric layer a ceramic material whose particle shape is a plate-like shape or a columnar shape, a method for increasing the Young's modulus of a ceramic material used for a dielectric layer, and the like. An example of a method includes reducing pores of the ceramic material used for the dielectric layers 3 and 4 compared to pores of the ceramic material used for the dielectric layer 2 and increasing the density. Consequently, it is possible to make the fracture toughness values of the dielectric layers 3 and 4 larger than the fracture toughness value of the dielectric layer 2. Furthermore, the method for reducing pores in a ceramic material used for a dielectric layer and increasing the density, and the method for using for a dielectric layer a ceramic material whose particle shape is a plate-like shape or a columnar shape can increase the Young's modulus of the dielectric layer.
The layer configuration of the antenna module 1 is not particularly limited, and a configuration illustrated in
The dielectric layers of the antenna module 1 may include two types of layers. For example, a configuration illustrated in
In the antenna module 1, the distribution layer DIV may be omitted. The antenna module 1 may adopt, for example, configurations illustrated in
In the antenna module 1, the distribution layer DIV and the filter layer FIL may be omitted. The antenna module 1 may adopt, for example, a configuration illustrated in
Next, functions and effects of the antenna module 1 according to the present embodiment will be described.
The antenna module 1 is the antenna module 1 that includes at least the radiation electrode 10A and the power feeding electrodes 13H and 13V that are coupled with radiation electrode 10A, and includes the dielectric layer 2 that includes the power feeding electrodes 13H and 13V, and the dielectric layer 3 (or the dielectric layer 4) that is disposed at the one side of the dielectric layer 2 in the thickness direction of the power feeding electrodes 13H and 13V, and the fracture toughness value of the dielectric layer 3 (or the dielectric layer 4) is larger than the fracture toughness value of the dielectric layer 2.
According to this antenna module 1, the dielectric layer 3 (or the dielectric layer 4) having the high fracture toughness value can be disposed on an outer layer side of the dielectric layer 2 including the power feeding electrodes 13H and 13V. A material having a high fracture toughness value is a material in which a crack hardly develops. Consequently, a dielectric layer in which chipping or the like hardly occurs can be disposed on the outer layer side of the antenna module 1. Consequently, it is possible to prevent chipping or the like, and make the external appearance of the antenna module good.
The Young's modulus of the dielectric layer 3 (or the dielectric layer 4) may be larger than the Young's modulus of the dielectric layer 2. A material having a high Young's modulus has high rigidity and hardly deforms, and therefore is a material whose machining accuracy is good. Consequently, a dielectric layer whose machining accuracy is good and in which chipping or the like hardly occurs can be disposed on the outer layer side of the antenna module 1. Consequently, it is possible to prevent chipping or the like, and make the external appearance of the antenna module good.
The antenna module 1 may further include the ground electrodes G1, G2, and G3 that are disposed at the other side in the thickness direction with respect to the power feeding electrodes 13H and 13V. In this case, it is possible to dispose the dielectric layer 3 having the high fracture toughness value with respect to the dielectric layer 2 on the opposite side of the ground electrodes G1, G2, and G3, and prevent chipping or the like on the surface layer side of the antenna module 1 and make the external appearance of the antenna module 1 good.
The radiation electrode 10A may be disposed in the dielectric layer 3. In this case, the radiation electrode 10A is disposed inside the dielectric layer 3 having the high fracture toughness value. Consequently, the radiation electrode 10A is disposed at a position close to the surface layer, so that it is possible to achieve high radiation efficiency.
The radiation electrode 10A may be disposed on the principal surface 2a on the one side of the dielectric layer 2 and be covered with the dielectric layer 3. In this case, the radiation electrode 10A on the principal surface 2a of the dielectric layer 2 can be covered with the dielectric layer 3 having the high fracture toughness value. Consequently, it is possible to sufficiently protect the radiation electrode 10A from an impact from an outside.
The antenna module 1 may further include the dielectric layer 4 disposed at the other side of the dielectric layer 2 in the thickness direction. In this case, the antenna module 1 can be provided with another circuit or the like on the side opposite to the dielectric layer 3.
The dielectric layer 4 may include the filter circuit pattern 30V. In this case, it is possible to reduce extra transmission paths, so that it is possible to reduce transmission loss of the antenna module 1.
The fracture toughness value of the dielectric layer 4 may be larger than the fracture toughness value of the dielectric layer 2. In this case, the dielectric layer 2 is sandwiched from both sides by the dielectric layers 3 and 4 having the high fracture toughness values. Consequently, it is possible to make the external appearance of the both sides of the antenna module 1 good.
The Young's modulus of the dielectric layer 4 may be larger than the Young's modulus of the dielectric layer 2. In this case, it is possible to dispose on the outer layer side on the other side of the antenna module 1 a dielectric layer whose machining accuracy is good and in which chipping or the like hardly occurs.
The antenna module 1 may include the plurality of columnar ground conductors 11A disposed around the radiation electrode 10A and the power feeding electrodes 13H and 13V. In this case, in a case where antenna elements each including the radiation electrode 10A and the power feeding electrodes 13H and 13V are disposed in an array, it is possible to enhance isolation from other surrounding antenna elements.
End parts on the one side in the thickness direction of the plurality of ground conductors 11A may be covered with the dielectric layer 3. In this case, the dielectric layer 3 having the high fracture toughness value can cover the end parts of the ground conductors 11A.
The antenna module 1 may further include the radiation electrode 10B, and the power feeding electrodes 14H and 14V that are coupled with the radiation electrode 10B, and the dielectric layer 2 may include the power feeding electrodes 14H and 14V. In this case, the antenna module 1 can include two sets of the radiation electrodes and the power feeding electrodes.
The antenna module 1 may further include the dielectric layer 4 that is disposed at the other side of the dielectric layer 2 in the thickness direction, and the dielectric layer 2 may include the distribution circuit pattern 20V between the power feeding electrodes 13H and 13V and the power feeding electrodes 14H and 14V, and the dielectric layer 4. In this case, a plurality of antenna elements can be integrated with the antenna module 1, so that it is possible to simplify a connection structure between the antenna module 1 and an IC that supplies antenna signals.
The dielectric layer 3 and the dielectric layer 4 may be made of the same dielectric. In this case, it is possible to reduce the number of types of dielectrics to prepare for forming the plurality of dielectric layers.
The dielectric layer 2, the dielectric layer 3, and the dielectric layer 4 may be made of the low-temperature fired ceramic. In this case, it is possible to achieve low loss when the antenna module 1 is used in the millimeter wave band.
The fact that chipping hardly occurs in the dielectric layers 3 and 4 and the dielectric layer 2 will be described with reference to
The present disclosure is not limited to the above-described embodiment.
For example, the shape and the arrangement of each conductor of the antenna module 1 illustrated in
The technique according to the present disclosure includes the following configuration examples, yet is not limited thereto.
Number | Date | Country | Kind |
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2022-170676 | Oct 2022 | JP | national |
Number | Date | Country | |
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20240136719 A1 | Apr 2024 | US |