Claims
- 1. An antifuse device comprising:
- a first doped polysilicon layer in electrical connection with a first conductive line;
- an intrinsic polysilicon layer formed over and in contact with the first doped polysilicon layer; and
- a second doped polysilicon layer formed over and in contact with the intrinsic polysilicon layer, the second doped polysilicon layer being in electrical connection with a second conductive line.
- 2. The antifuse device of claim 1, wherein the first conductive line comprises tungsten.
- 3. The antifuse device of claim 1, wherein the first doped polysilicon layer is about 200-500 angstroms thick.
- 4. The antifuse device of claim 1, wherein the intrinsic polysilicon layer is about 5,000-10,000 angstroms thick.
- 5. The antifuse device of claim 1, wherein the second doped polysilicon layer is about 1,000-2,000 angstroms thick.
- 6. A method of using the antifuse device of claim 1, comprising the step of applying a voltage across the first conductive line and the second conductive line adequate to cause diffusion of dopants into the intrinsic polysilicon layer sufficient for the intrinsic polysilicon layer to become conductive.
- 7. A programmable device comprising
- a plurality of first doped polysilicon segments in electrical connection with a first conductive line;
- an intrinsic polysilicon segment disposed on each of the first doped polysilicon segments;
- a second doped polysilicon segment disposed on each of the intrinsic polysilicon segments; and
- a second conductive segment disposed on each of the second doped polysilicon segments.
- 8. The antifuse device of claim 1, wherein the first conductive line comprises tungsten.
- 9. The antifuse device of claim 7, wherein the first doped polysilicon segments are about 200-500 angstroms thick.
- 10. The antifuse device of claim 7, wherein the instrinsic polysilicon segments are about 5,000-10,000 angstroms thick.
- 11. The antifuse device of claim 7, wherein the second doped polysilicon segments are about 1,000-2,000 angstroms thick.
- 12. A method of using the antifuse device of claim 7, comprising the step of applying a voltage across the first conductive line and at least some of the second conductive lines adequate to cause diffusion of dopants into the respective intrinsic polysilicon layer sufficient for the respective intrinsic polysilicon layer to become conductive.
Parent Case Info
This application is a Div of Ser. No. 08/534,008 filed Sep. 26, 1995 now U.S. Pat. No. 5,844,297.
US Referenced Citations (41)
Foreign Referenced Citations (2)
Number |
Date |
Country |
55-27645 |
Feb 1980 |
JPX |
1-251757 |
Oct 1989 |
JPX |
Divisions (1)
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Number |
Date |
Country |
Parent |
534008 |
Sep 1995 |
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