National Semiconductor Corporation, Wendell, Dennis, et al., “A 3.5ns, 2K×9 Self Timed SRAM”, IEEE, 1990 Symposium on VLSI Circuits, pp. 49-50. |
Bonges, Henry, et al., “A 576K 3.5ns Access BiCMOS ECL Static RAM with Array Built-in Self-Test”, IEEE, 1992. |
Chappell, Terry I., et al., “A 2-ns Cycle, 3.8-ns Access 512-KB CMOS ECL SRAM with a Fully Pipelined Architecture”, IEEE Journal of Solid-State Circuits, vol. 26, No. 11, Nov. 1991. |
Childs, Larry F., “An 18 ns 4K×4 DMOS SRAM”, IEEE Journal of Solid-State Circuits, vol. SC-19., No. 5., Oct. 1984, pp. 545-551. |
Flannagan, Stephen T., et al., “Two 13-ns 64K CMOS SRAM's with Very Low Active Power and Improved Asynchronous Circuit Techniques”, IEEE Journal of Solid-State Circuits, vol. SC-21, No. 5, Oct. 1986, pp. 692-703. |
Williams, Todd, et al., “An Experimental 1-Mbit CMOS SRAM with Configurable Organization and Operation”, IEEE Journal of Solid-State Circuits, vol. 23, No. 5, Oct. 1988, pp. 1085-1093. |