This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2014-072371, filed on Mar. 31, 2014; the entire contents of which are incorporated therein by reference.
Embodiments described herein relate generally to a direct-current interrupting apparatus and a direct-current interrupting method used for interrupting a direct current.
In transmitting power, generally, a system needs to have a function of interrupting a transmitted current in order to prepare for an accident or the like. An interrupter is used for this purpose, but in transmission of a direct current there is difficulty because there is no current zero point in the transmitted direct current, the difficulty not arising in the case of interrupting an alternating current.
A direct-current interrupter includes, as an existing basic configuration, for example, a current-carrying path having a switch and a current-interrupting path connected in parallel to the current-carrying path and capable of gradually decreasing current. At normal time, the switch on the current-carrying path is closed to pass current through the current-carrying path. At accident time, the current-interrupting path is temporarily made to conduct into a state to allow current to pass therethrough at accident time instead of the current-carrying path. On the other hand, the switch is opened not to conduct the current through the current-carrying path and thereby commutes the current at accident time to the side of the current-interrupting path, and thereafter the current through the current-interrupting path is immediately limited to complete interruption.
The current-carrying path of the direct-current interrupter is more preferable as it is smaller in electric resistance. This is because the electric resistance leads to power loss at normal time. Further, faster switching from the current-carrying path to the current-interrupting path of the direct-current interrupter is more preferable. This is because as the switching is performed later, the current at accident time increases more and the value of the current to be interrupted by the current-interrupting path becomes larger. If the current to be interrupted becomes larger, a current-interrupting path with a larger capacity is required, leading to an increase in size of the interrupter.
A direct-current interrupter in an embodiment includes a current-carrying path and a current-interrupting path connected in parallel to the current-carrying path. The current-carrying path includes a first switch and a second switch connected in series and a resistor connected in parallel to the second switch. The first switch has a predetermined first withstand voltage property and switches between conduction and non-conduction of current by using no semiconductor switch. The second switch has a second withstand voltage property lower in withstand voltage property than the first withstand voltage property and switches between conduction and non-conduction of current by using no semiconductor switch. The resistor protects the second switch from voltage to be applied to the second switch. The current-interrupting path includes a semiconductor switch and a current source connected in series and a non-linear resistor connected in parallel to a series connection of the semiconductor switch and the current source.
Further, a current-interrupting method of an embodiment is a current-interrupting method by the above direct-current interrupter and is as follows. Namely, (1) a current-carrying path current being a current flowing through the current-carrying path is detected. (2) The output current of the current source is controlled so that the current-carrying path current is reduced to a predetermined threshold current value or less close to zero. (3) Electrode opening control on the first or second switch is started after the current-carrying path current is reduced to the threshold current value or less. (4) The semiconductor switch is controlled to switch to OFF at least after a point in time of the electrode opening control on the first or second switch. Some other current-interrupting methods of embodiments are additionally disclosed.
On the basis of the above, a direct-current interrupter of an embodiment will be described below referring to the drawings.
At normal time, the switches 11, 12 on the current-carrying path 10 are closed to pass current through the current-carrying path 10. At the time when current interruption is required because of an accident or the like, the control unit 50 issues a command to turn the semiconductor switch 31 into an on-state and cause the current source 41 to pass current to thereby forcibly and temporarily cause the current-interrupting path 30 to conduct electricity. Meanwhile, the control unit 50 opens the switches 11, 12 not to conduct current through the current-carrying path 10 to thereby commute the current to the side of the current-interrupting path 30, and limits immediately thereafter the current flowing through the current-interrupting path 30 to complete interruption.
In
The switch 11 is a switch that switches between conduction and non-conduction of current by using no semiconductor switch and has a predetermined high withstand voltage property (described later). The switch 12 is also a switch that switches between conduction and non-conduction of current by using no semiconductor switch and has a withstand voltage property lower than the withstand voltage property of the switch 11. The switch 11 and the switch 12 are switches different in characteristic as described above and share roles. The switch 11 and the switch 12 are connected in series, and each of them has electrodes whose opening/closing is controlled by the control unit 50.
The resistor 13 connected in parallel to the switch 12 is a resistor that protects the switch 12 by suppressing the voltage that may be applied to the switch 12 to a low voltage. More specifically, in the state that the switch 11 and the switch 12 are controlled into open states, the voltage applied to the direct-current interrupter is in a state of being substantially borne by the voltage developed across the switch 11 and the voltage developed across the switch 12. In this event, since no resistor is connected in parallel to the switch 11 (=there is an equivalent very large resistor), most of the voltage applied to the direct-current interrupter is borne as a resistance-divided voltage by the side of the switch 11. However, the indication of the lower limit of the resistance value of the resistor 13 will be described later because it has a point relating to the resistance value at on-time of the semiconductor switch 31.
The current detecting unit 21 detects the current flowing through the current-carrying path 10 and communicates it to the control unit 50. To this end, the current detecting unit 21 is provided in the current-carrying path 10 to be connected in series to the switches 11, 12. A conceivable concrete example of the current detection is a configuration of inserting a resistor having a very small resistance value into the current-carrying path 10 and detecting the voltage across it.
The semiconductor switch 31 is a switch that switches between conduction and non-conduction of current, and its switching control is performed by the control unit 50. As a concrete example of the semiconductor switch, a structure is used as illustrated in the drawing in which a unit element is configured by connecting two inverse-parallel connection (parallel connection mutually inverse in forward direction) elements in series in opposite direction to face each other, the inverse-parallel connection being an inverse-parallel connection of an IGBT (insulated gate bipolar transistor) and a diode, and a large number of the unit configurations are connected in series so as to have two terminals as a whole. When a voltage caused by a control signal from the control unit 50 is applied to each of gates of the IGBTs, each of the unit elements becomes a state (namely, an on-state) in which current flows in either direction.
Various concrete structures of the semiconductor switch other than the illustrated one can be employed. The semiconductor switch generally has an equivalent resistance (on-resistance) in the on-state and causes voltage drop due to conduction. This voltage drop becomes larger depending on the number of the aforementioned unit elements in series in the case of the semiconductor switch 31 illustrated in
The necessary number of the unit elements in series can be decided under the condition that the interrupter can withstand the high voltage to be applied thereto after the semiconductor switch 31 reaches an off-state for the current interruption. This is generally a large number to some extent (for example, several hundreds).
Further, the on-resistance needs to be sufficiently lower than that of the resistor 13 provided in the current-carrying path 10 in terms of a necessary function of temporarily passing current as the current-interrupting path 30. Actually, a minimum required number of the unit elements in series has been decided in terms of withstand voltage, and the on-resistance of the semiconductor switch 31 is decided depending on the number. As a result, the resistance value of the resistor 13 existing in the current-carrying path 10 can be decided to be a considerably large resistance value on the basis of the on-resistance. As an example, the resistance value of the resistor 13 is made at least 1000 times or more larger than the on-resistance of the semiconductor switch 31.
The control by the control unit 50 of switching the semiconductor switch 31 is normally a shift of being turning off the semiconductor switch 31 at normal time and switching the semiconductor switch 31 to ON once and then immediately returning it to OFF at interrupting operation time. However, not limited to this, even if the control unit 50 performs control to turn on the semiconductor switch 31 at normal time, no current actually flows through the current-interrupting path 30 because of its on-resistance, and all the current flows through the side of the current-carrying path 10, so that the control to turn on the semiconductor switch 31 at normal time in this manner is also an available option.
The current source 41 is connected in series to the semiconductor switch 31, whereby a series-connected element composed of the current source 41 and the semiconductor switch 31 is connected in parallel to the current-carrying path 10. An output current of the current source 41 is desirably controlled by the control unit 50. In this point, various examples of, particularly, time-series control will be further described later. In simpler terms, the current source 41 is a structure for quickly commuting the current flowing through the current-carrying path 10 by a forced current by the current source 41 as a current flowing through the side of the current-interrupting path 30 at the time when current interruption becomes necessary because of an accident or the like. The forced current by the current source 41 is sometimes called a “reverse current” below because it is a current for reducing the current through the current-carrying path 10.
The non-linear resistor 32 is connected in parallel to the series-connected element composed of the current source 41 and the semiconductor switch 31. The non-linear resistor 32 functions at a final stage of the interrupting operation of the direct-current interrupter and, concretely, allows current to temporarily flow therethrough in a state that not only the current-carrying path 10 but also the series-connected element composed of the semiconductor switch 31 and the current source 41 do not conduct current any longer. At the initial of the temporal flow, there flows a current having the same value as that of the current which has flown through the series-connected element composed of the current source 41 and the semiconductor switch 31 immediately before the state. This causes a relatively large voltage drop in the non-linear resistor 32 to decrease the current, the decrease in current increases the resistance value because of the non-linearity of the resistor, and the current becomes substantially zero due to the increased resistance value, resulting in completion of the current interruption.
Note that to the control unit 50, the current detected by the current detecting unit 21 is communicated as mentioned in the above explanation. Then, the control unit 50 controls the opening/closing of the electrodes of the switches 11, 12, controls the semiconductor switch 31 to switch between ON and OFF, and controls the output current of the current source 41. Inside the control unit 50, respective subordinate control units exist corresponding to those controls, and the subordinate control units are connected to one another to transmit necessary information required for those controls to be shared with one another.
Next,
In the configuration illustrated in
According to the direct-current interrupter of Embodiment 1 illustrated in
Next,
Though a concrete example of the switch 12 is not mentioned in the explanation of
The vacuum switch has the vacuum valve 120 as illustrated in
The fixed side current-carrying shaft 124 is provided in a manner to penetrate an upper surface of the cylinder of the insulating tube 121, and the fixed side current-carrying shaft 124 is fixed to the insulating tube 121 at a portion penetrating the insulating tube 121. A portion of the fixed side current-carrying shaft 124 that projects by penetrating the upper surface of the cylinder of the insulating tube 121 becomes one terminal as the switch. At an end portion of the fixed side current-carrying shaft 124 located inside the insulating tube 121, the fixed side electrode 122 in a flat disc shape having an axis common to that of the fixed side current-carrying shaft 124 is provided. Facing a surface of the fixed side electrode 122 on the side opposite to the side where the fixed side current-carrying shaft 124 is located, a surface of the movable side electrode 123 having the same shape as and an axis common to those of the fixed side electrode 122 is located.
On the side of movable side electrode 123 opposite to the side of the surface facing the fixed side electrode 122, the movable side current-carrying shaft 125 is provided having an axis common to those of the fixed side current-carrying shaft 124, the fixed side electrode 122, and the movable side electrode 123. The movable side current-carrying shaft 125 is provided in a manner to penetrate a lower surface of the cylinder of the insulating tube 121, and a penetrating and projecting portion thereof becomes another terminal as the switch. Note that as has been already explained, the bellows 126 has one end fixed to the movable side current-carrying shaft 125 and another end fixed to the insulating tube 121. The bellows 126 maintains air-tightness inside the insulating tube 121 at all times even if the movable side current-carrying shaft 125 is moved in its axial direction so as to open/close current.
Considering a case where the direct-current interrupter is used to a system of, for example, about a direct-current 300 kV, the semiconductor switch 31 has a huge number of unit elements as has been already explained so as to ensure its withstand voltage, but the switch 12 only needs to withstand the voltage corresponding to the voltage drop by the semiconductor switch 31 in the on-state at most. The voltage drop is estimated to be several kV, and even the switch 12 being the vacuum switch can withstand this degree of voltage. Thus, the switch 12 being the vacuum switch can achieve the excellent insulation recovery characteristic as the direct-current interrupter.
On the other hand, though a concrete example of the switch 11 is not mentioned in the explanation of
Considering a case where the direct-current interrupter is used to a system of, for example, about a direct-current 300 kV, it is estimated that the direct-current interrupter reaches a state where a voltage of about 500 kV is applied thereto at most immediately after the semiconductor switch 31 shifts to the off-state. Use of the switch 11 being the gas switch enables the direct-current interrupter to withstand such a high voltage.
Next, time-series operations of the direct-current interrupter illustrated in
When an accident occurs in a direct-current power transmission system at Time A, the total current gradually increases as illustrated in
Then, in the middle that the output current of the current source 41 is gradually increased by the control unit 50, the control unit 50 starts electrode opening control on the switches 11, 12 (Time D). When the electrode opening control on the switches 11, 12 is started, the electrodes are physically separated from each other in each of the switches 11, 12, but an arc current flows between the electrodes at the beginning because a separation distance between them is short. The arc current causes an arc resistance between the electrodes, so that if the drive capability of the current source 41 is limited, the gradually increasing speed of its output current may slightly increase after Time D.
The above-described gradually increasing state of the output current of the current source 41 is continued until the current flowing through the current-carrying path 10 reaches zero (Time E) by the action of the current flowing through the semiconductor switch 31. The fact that the current has reached zero is communicated to the control unit 50 by the current detecting unit 21 provided in the current-carrying path 10 and recognized by the control unit 50. With this, the commutation of the current flowing through the current-carrying path 10 to the current-interrupting path 30 is completed.
After the value of the current flowing through the current-carrying path 10 has decreased to zero, the control unit 50 controls the current source 41 regarding the output current so as to keep the value of the current through the current-carrying path 10 at zero (from Time E to Time F). This is control also performed by communicating the detected result by the current detecting unit 21 to the control unit 50. In a period from Time E to Time F, a certain level of voltage drop occurs due to the on-resistance by the current flowing through the semiconductor switch 31, which is a voltage applied to the direct-current interrupter (see
As has been already explained, the switch 12 has the withstand voltage property with respect to the applied voltage (for example, several kV). From Time E to Time F, the voltage across the semiconductor switch 31 may be possibly applied as it is to the switch 12. This is because there is a possibility that the electrode open state on the side of the switch 11 has not yet finally been established.
After Time E, at and after the time point (Time F) when the electrode open states of the switches 11, 12 can be considered to have been finally established, the control unit 50 controls the semiconductor switch 31 so as to bring the semiconductor switch 31 into the off-state. Since the current-carrying path 10 has already conducted no current at Time E and the series-connected element composed of the semiconductor switch 31 and the current source 41 is changed to conduct no current at Time F, current temporarily flows through the non-linear resistor 32 at and after Time F.
At the initial stage of the temporal flow, the current having the same value as that of the current which has flown through the series-connected element composed of the semiconductor switch 31 and the current source 41 immediately before the stage. This causes a relatively large voltage drop (for example, 500 kV) in the non-linear resistor 32 to decrease the current, the decrease in current increases the resistance value because of the non-linearity of the resistor, and the current becomes substantially zero due to the increased resistance value, resulting in completion of the current interruption (Time G). At and after Time G, a direct-current voltage (for example, 300 kV) according to the direct-current power transmission system is applied to the direct-current interrupter (see
According to the operations of the direct-current interrupter according to the standard timings as illustrated in
Next, Embodiment 2 will be explained referring to
This embodiment is characterized in that timing to start the electrode opening control on the switches being the illustrated timing at Time D. This timing is the timing when the current of the current source 41 is controlled so that the current through the current-carrying path 10 is reduced to a predetermined threshold current value or less close to zero by the control unit 50 (see Time D in
Consequently, according to this embodiment, the electrode opening controls are started after the current through the current-carrying path 10 reaches a predetermined current value or less close to zero, thereby making it possible to significantly suppress occurrence of an arc current between the electrodes of each of the switches 11, 12 so as to effectively reduce the damage to the electrodes. Note that even if starts of the electrode opening control on the switches 11, 12 are slightly different from each other, almost the same effect can be considered to be achieved.
In this embodiment, it is preferable to use a vacuum switch having flat plate electrodes among vacuum switches, as the switch 12. This is because the vacuum switch having the flat plate electrodes is low in electric resistance in a closed state and thereby can further reduce the power loss at normal time. The flat plate electrodes are electrodes in which the surfaces (contact points) of the fixed side electrode 122 and the movable side electrode 123 facing each other, referring to the already-described schematic view illustrated in
Next, Embodiment 3 will be explained referring to
This embodiment is also characterized in that timing to start the electrode opening control on the switches being the illustrated timing at Time D. More specifically, this timing (Time D) is set to a timing after and immediately close to Time C that is a timing to start reverse current conduction. As has been already explained in
This embodiment positively utilizes this action. More specifically, there occurs a possibility that on the side of the current source 41 the gradually increasing speed for gradually increasing the output current from zero can be further increased correspondingly to the increase in electric resistance and, as a result, it becomes possible to more quickly commute the current through the current-carrying path 10 to the side of the current-interrupting path 30 as the current to be interrupted. Consequently, the direct-current interrupter can be made a direct-current interrupter having high speed corresponding thereto. Note that even if starts of the electrode opening control on the switches 11, 12 are slightly different from each other, almost the same effect can be considered to be achieved.
In this embodiment, it is preferable to use a vacuum switch having vertical magnetic field electrodes among vacuum switches, as the switch 12. This is because the vacuum switch having the vertical magnetic field electrodes controls the arc current flowing between the electrodes after the electrode opening control to diffuse by the vertical magnetic field, thereby suppressing damage to the electrodes. The vertical magnetic field electrodes are electrodes in which a coil is attached to the electrode itself of each of the fixed side electrode 122 and the movable side electrode 123, referring to the already-described schematic view illustrated in
Next, Embodiment 4 will be explained referring to
This embodiment is also characterized in that timing to start the electrode opening control on the switches being the illustrated timing at Time D, and this timing (Time D) is set to a timing before Time C that is a timing to start reverse current conduction. In short, this embodiment is an embodiment positively utilizing the action explained in 6A, 6B, 6C, 6D.
By shifting Time D forward, a much larger arc resistance raises a possibility to further increase the gradually increasing speed for gradually increasing the output current from zero on the side of the current source 41. As a result, it becomes possible to more quickly commute the current through the current-carrying path 10 to the side of the current-interrupting path 30 as the current to be interrupted. Consequently, the direct-current interrupter can be made a direct-current interrupter having high speed corresponding thereto. Note that even if starts of the electrode opening control on the switches 11, 12 are slightly different from each other, almost the same effect can be considered to be achieved.
In this embodiment, it is also preferable to use the vacuum switch having vertical magnetic field electrodes among vacuum switches, as the switch 12 so as to suppress the damage to the electrodes, as in the explanation for
Next, Embodiment 5 will be explained referring to
This embodiment performs control in consideration of Time D1 when the distance between the electrodes of the switch 12 reaches a predetermined distance, Time D1 being estimated from Time D when the electrode opening control is started on the switch 12. The output current of the current source 41 is controlled by the control unit 50 so that the commutation from the current-carrying path 10 to the current-interrupting path 30 is completed at a time point later than Time D1 (commutation completed at Time E). In short, the degree of gradual increase in the output current of the current source 41 is adjusted in this manner by the control unit 50.
Such control causes the voltage application to the switch 12 corresponding to the voltage drop by the semiconductor switch 31 after a state where the withstand voltage property of the switch 12 is sufficiently ensured (its period is from Time E to Time F), leading to a very preferable result in terms of operation of the switch 12.
This embodiment is the same in concept as the embodiment explained referring to
Next, Embodiment 7 will be explained referring to
This embodiment performs control in consideration of Time D2 when the distance between the electrodes of the switch 11 reaches a predetermined distance, Time D2 being estimated from Time D when the electrode opening control is started on the switch 11. The ON/OFF of the semiconductor switch 31 is controlled by the control unit 50 so that the semiconductor switch 31 is controlled to switch to the off-state at a time point later then Time D2 (its timing is Time F).
Such control causes the high voltage application to the direct-current interrupter after a state where the withstand voltage property of the switch 11 is sufficiently ensured (its period is after Time F), leading to a very preferable result in terms of operation of the switch 11.
This embodiment is the same in concept as the embodiment explained referring to
As has been described above, according to the direct-current interrupter of each embodiment, the power loss at normal time can be greatly reduced because the switch using the semiconductor switch is not used in the current-carrying path 10. Further, since the current source 41 is inserted in the current-interrupting path 30, it is possible to forcibly and quickly commute the current through the current-carrying path 10 to the side of the current-interrupting path 30 as the current to be interrupted. Accordingly, it becomes possible to decrease the value of the current to be interrupted by the current-interrupting path 30 so as to avoid an increase in size of the interrupter.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
Number | Date | Country | Kind |
---|---|---|---|
2014-072371 | Mar 2014 | JP | national |