Ever-increasing semiconductor density requirements have led to devices termed “advanced packages,” which consist of multiple integrated circuits housed within a single package. These packages are becoming a preferred alternative to increased density on individual microcircuits. Advanced packages are also being used in mobile devices where ultra-thin packages with increased functionality are required.
Integrating multiple die in a single package introduces different process development issues and failure modes compared to a single device per package. These include interconnect failures between silicon devices due to metallurgy associated with interdiffusion and brittle phase formation; cracks in through-silicon via insulator sleeves causing shorts to the silicon; stress in the devices causing delamination of the devices as they bow pulling apart the stack devices; overheating; and misalignment of the interconnects. In some cases, packaging houses are not stacking die but stacking wafers and dicing after the completion of the stacking process. In this case small misalignments from the center of the wafer stack become large toward the edge of the wafer.
Identification of the root cause of many of the above failure modes requires point cross sectioning the package. Many traditional failure analysis techniques cannot, however, make cross sections in advanced packages that can be as large as 50 mm×50 mm and 6 mm thick.
For example, focused ion beam (FIB) (Ga or Plasma) cannot cross section depths greater than a few 100 microns, let alone the depths that may be required to find the root cause of the failure in an advanced package. Broad Argon Beam tools lack the current to produce lengths >10 mm and depths >2 mm polished regions in reasonable times. The only current solution is a slow speed, low damage saw. However, this technique often produces delamination and cracks due to the stresses and dissimilar materials present.
Those skilled in the art will recognize other detailed designs and methods that can be developed employing the teachings of the present invention. The examples provided here are illustrative and do not limit the scope of the invention, which is defined by the attached claims. The following detailed description refers to the accompanying drawings. The same reference numbers in different drawings may identify the same or similar elements.
With reference to
In some embodiments, a focus module 116 may be included in the beam path. The focus module 116 comprises a motorized optical element that can shift the focal position of the laser beam at the sample. A focus module 116 can be used in place of a motorized z-stage at the sample. Following the focus module 116 (or circular polarizer 114 if no focus module is used) is a camera module 118. As shown schematically in
Following the camera module is a scan head 122. The scan head 122 comprises two actuated mirrors to scan the laser beam in orthogonal directions at the sample surface. Alternatively the scan head can comprise a rotating polygon mirror. Following the scan head 122, is an F-theta lens 124, which focuses the laser beam onto the sample surface. An F-theta lens allow the laser beam to be scanned while maintaining focus across the field of view, however, a different type of lens may be used if a reduced field of view is acceptable.
According to an embodiment described herein, the laser beam may be held in a fixed position while the 5-axis stage 210 is moved to mill a portion of the sample. In other embodiments, a combination of movement of the laser beam by the scan head 112 and movement of the 5-axis stage is used for milling the sample.
According to embodiments described herein, the pulsed laser 10 is operated between 1 and 50 Watts of power. In addition, the wavelength of the pulsed laser may be between about 1050 nanometers (nm) and 350 nm. According to further aspects described herein, the pulse length is between 250 femotseconds (fs) and 750 picoseconds (ps). According to a further aspect, the pulsed laser has a spot size between 10 nm and 100 nm at the sample.
Consistent with embodiments described herein, the sample may be held under liquid, such as water, in the bath 220, with the top surface of the sample up to 1.5 mm under the surface of the liquid. A fluid recirculating system may include circulation pump 222 and filter 224 as described briefly above. Circulation pump 222 may operate to pump the liquid through filter 224 and maintain flow during processing so the liquid in bath 220 stays clear and to eliminate bubbles from the laser ablation process. The recirculating system may include a liquid level adjustment to compensate for different size samples and to remove all liquid in case a sample needs to be processed without the liquid. The recirculating system may include a capability to adjust the liquid level during processing based on either processing time or measured level to replace liquid lost by splattering or evaporation, as well as to keep the liquid level at a fixed height above the surface that is being ablated. This is necessary to keep the depth of liquid above the ablated surface constant while the level of the ablated surface is gradually lowered during the ablation process.
An additive may be added to the liquid in bath 220 so that the liquid “wet's” the surface of the sample. In some implementations consistent with embodiments described herein, the additive may be an alcohol or a soap. This additive may also be chosen to reduce oxidation or selectively enhance ablation of the sample, such as a weak acid for reducing of metal oxidation.
In a further aspect, the laser may be paused to allow liquid to flow back into the ablated region. In a further aspect, a small region within a larger region to be milled is first milled entirely through the sample. This allows liquid to flow into the milling region from below the sample to cool the ablation region of the sample while the larger region is being milled.
According to another aspect, the pulsed laser operates in a burst mode, where a burst of pulses is continuously repeated at a fixed repetition rate. In an aspect of the invention, the number of pulses in each burst can vary between 2 and 50.
According to a yet another aspect, the system includes a spectrometer to analyze the plasma plume as extracted by the plume extractor 216. The spectrum analysis of the plasma plume is useful to determine the material being ablated. This can be used for ablation end point detection.
According to another aspect, the system includes a light detector, or a mirror and a light detector, located underneath the sample and protected by a layer of liquid (e.g., a depth of >5 mm) to prevent ablation of the detector/mirror/window. The light detector or mirror/light detector operates to detect the end point of a cross section. The detector signal can be synchronized to the laser scanner system to create a shadow image of the cross-section edge. The light detector may not have any dimensional information, but by synchronizing the detection of light with the laser position, a 2D image can be created based on the raster effect of the laser beam scanning across the sample.
Although the invention has been described in detail above, it is expressly understood that it will be apparent to persons skilled in the relevant art that the invention may be modified without departing from the spirit of the invention. Various changes of form, design, or arrangement may be made to the invention without departing from the spirit and scope of the invention. Therefore, the above-mentioned description is to be considered exemplary, rather than limiting, and the true scope of the invention is that defined in the following claims.
No element, act, or instruction used in the description of the present application should be construed as critical or essential to the invention unless explicitly described as such. Also, as used herein, the article “a” is intended to include one or more items. Further, the phrase “based on” is intended to mean “based, at least in part, on” unless explicitly stated otherwise.
This PCT application claims priority to U.S. Provisional Application No. 63/071,456 filed on Aug. 28, 2020 and titled Apparatus and Method for Semiconductor Package Failure Analysis, the entire disclosure of which is incorporated here by reference.
Filing Document | Filing Date | Country | Kind |
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PCT/US2021/047844 | 8/27/2021 | WO |
Number | Date | Country | |
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63071456 | Aug 2020 | US |