Claims
- 1. A hydrogen sulfide trap comprising: a monolith substrate on which is disposed,
zinc oxide; and a second metal or oxide thereof selected from the group consisting of copper, nickel, iron, manganese, and combinations thereof dispersed on a support.
- 2. The hydrogen sulfide trap of claim 1, wherein the support is selected from the group consisting of zinc oxide, ceria, titania, zirconia, alumina, oxides of iron and combinations thereof.
- 3. The hydrogen sulfide trap of claim 1, wherein the support comprises zinc oxide.
- 4. A hydrogen sulfide trap comprising a monolith substrate on which is disposed zinc oxide, and
copper or an oxide thereof dispersed on a support.
- 5. The hydrogen sulfide trap of claim 4, wherein the supported copper or oxide thereof forms a first layer adhering to the monolith substrate, and the zinc oxide forms a second layer overlying and adhering to the first layer.
- 6. The hydrogen sulfide trap of claim 4, wherein the zinc oxide forms an upstream zone disposed on an upstream segment of the monolith substrate, and the supported copper or oxide thereof forms a downstream zone on a downstream segment of the monolith substrate.
- 7. The hydrogen sulfide trap of claim 4, wherein the support comprises a second portion of zinc oxide.
- 8. The hydrogen sulfide trap of claim 7, wherein the zinc oxide and the zinc oxide-supported copper or oxide thereof form a layer adhering to the monolith substrate.
- 9. The hydrogen sulfide trap of claim 7, wherein the zinc oxide-supported copper or oxide thereof is in the form of a first layer adhering to the monolith substrate, and the zinc oxide is in the form of a second layer overlying and adhering to the first layer.
- 10. The hydrogen sulfide trap of claim 7, wherein the zinc oxide forms an upstream zone disposed on an upstream segment of the monolith substrate, and the zinc oxide supported copper or copper oxide thereof forms a downstream zone disposed on a downstream segment of the monolith substrate.
- 11. The hydrogen sulfide trap of claim 4, further comprising a binder.
- 12. A process for removing hydrogen sulfide in a gas stream comprising hydrogen sulfide, the process comprising: contacting the gas stream with a hydrogen sulfide trap comprising a monolith substrate on which is disposed;
zinc oxide, and a second metal or oxide thereof selected from the group consisting of copper, nickel, iron, manganese, and combinations thereof dispersed on a support.
- 13. The process of claim 12, wherein the second metal or oxide thereof is copper.
- 14. The process of claim 12, wherein the second metal or oxide thereof is copper and the support is zinc oxide.
- 15. The process of claim 14, wherein the zinc oxide and the zinc oxide supported copper or oxide thereof is in the form of a layer.
- 16. The process of claim 12, wherein the gas stream has a space velocity of at least 300 hr−1.
- 17. The process of claim 12, wherein the gas stream has a temperature below about 500° C.
- 18. The process of claim 12, wherein the gas stream has a sulfur concentration of no more than 10 ppm.
- 19. The process of claim 18, wherein the gas stream has a sulfur concentration of no more than 100 ppb.
- 20. In a system for producing hydrogen for a PEM fuel cell, the system having a hydrocarbon reformer reactor, a water-gas shift reactor, and a selective carbon monoxide oxidation reactor, the improvement comprising:
a monolith substrate on which is disposed zinc and a second metal oxide selected from the group consisting of copper, nickel, iron, manganese, and combinations thereof dispersed on a support, wherein the monolith substrate is downstream and in train with the hydrocarbon reformer reactor, and upstream and in train with the water-gas shift reactor.
- 21. The system of claim 20, wherein the second metal or oxide thereof is copper.
- 22. The system of claim 21, wherein the support comprises a second portion of zinc oxide.
Parent Case Info
[0001] This application is a continuation-in-part of U.S. Ser. No. 09/676,837 filed Sep. 29, 2000, the disclosure of which is herein incorporated by reference as if fully set forth herein.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09676837 |
Sep 2000 |
US |
Child |
09964152 |
Sep 2001 |
US |