The present invention relates to an apparatus for illuminating a surface, having at least one semiconductor laser bar with a plurality of emitters that are arranged in a first direction next to one another and at a spacing from one another, the spacing of the individual emitters from one another being smaller than the extent of the emitters in the first direction, and the divergence of the laser light emerging from the individual emitters being smaller with regard to the first direction than the divergence of laser light with regard to a second direction perpendicular to the first direction, as well as also comprising collimation means for the at least partial collimation of the laser light emerging from the emitters.
Apparatuses of the abovenamed type are sufficiently known. Semiconductor laser bars with a very small spacing between the individual emitters are generally designed as QCW bars that can be operated in a quasi-continuous fashion. In the case of semiconductor laser bars and also of QCW bars, the divergence in the so-called fast axis, that is to say in the second direction, or direction perpendicular to the direction in which the emitters are arranged next to one another, is clearly greater than in the so-called slow axis or the first direction. Nevertheless, the laser light emerging from the semiconductor laser bar is more difficult to collimate with regard to the slow-axis direction because, firstly, the emitters are extended in this slow-axis direction and, secondly, because a complete row of emitters is arranged next to one another. Consequently, in the case of semiconductor laser bars that are not designed as QCW bars, and thus in the case of which the spacing of the individual emitters from one another is generally greater than the extent of the emitters in the slow-axis direction, beam transforming means are introduced into the beam path before the collimation of the slow axis. These beam transforming means disclosed, for example, in EP 1 006 382 B1 can rotate the laser light, or can exchange the divergence of the laser light with regard to the first, or the slow-axis, direction with the divergence with regard to the second, or the fast-axis, direction. Furthermore, these beam transforming beams are arranged near the semiconductor laser bars in such a way that, before entry into the beam transforming means, the light from individual emitters does not yet overlap with one another. This produces a possibility for arranging slow-axis collimation means at a relatively large spacing from the semiconductor laser bars such that a large beam extent is achieved in the slow-axis direction that in turn permits a small divergence in the slow-axis direction and also a good collimatability. Such arrangements have not yet been implemented in the case of QCW bars, and so the collimatability of the laser light emanating from QCW bars is very poor.
Furthermore, in the case of the use of a semiconductor laser bar for illuminating a surface or for operating a free emitter, the different divergence of fast axis and slow axis and/or the poor collimatability of the slow axis turn out to be disadvantageous.
One problem on which the present invention is based is to provide an apparatus of the type mentioned in the beginning that can be used more effectively for illuminating a surface.
It is provided that for the purpose of transforming the laser light emerging from the emitters the illuminating apparatus has beam transforming means that are designed, and arranged in the beam path of the laser light emerging from the emitters, in such a way that they can exchange the divergence of the laser light with regard to the first direction with the divergence with regard to the second direction, the beam transforming means having such a spacing from the laser diode bar that at least the laser light from two directly adjacent emitters overlaps with one another upon impinging on the beam transforming means in the first direction.
It has surprisingly been shown that despite the overlapping of the laser light of adjacent emitters only comparatively slight losses occur before the impingement on the beam transforming means when using beam transforming means in the case of semiconductor laser bars with a short spacing between the individual emitters, that is to say in the case of QCW bars, for example. The losses occurring in the beam transforming means owing to the prior overlapping are, for example, less than 5%. The collimatability, and thus the ability to be used as a free emitter or for illuminating a surface can thereby be substantially improved owing to the use, which is surprisingly possible in this way, of beam transforming means, even for QCW bars.
It can be provided that the illuminating apparatus comprises homogenizer means for homogenizing the laser light emerging from the emitters. Owing to the use of homogenizer means, the homogeneity and thus the beam quality can be substantially improved such that a surface far removed from the apparatus can be illuminated very uniformly.
The uniform illumination of a surface far removed from the apparatus can be applied in multifarious ways. Examples are glare-free night vision systems in road traffic and rail traffic, as well as, in the field of metrology, digital image acquisition for production control of packaging such as, for example, foodstuffs packaging. A range of advantages result from the uniform illumination of the surface and from the better collimatability owing to the apparatus according to the invention. The intensity distribution in the region of the illuminated surface has very steep edges, and so it is possible to achieve a higher intensity in the illuminated region, because only a very slight power loss occurs in the adjacent regions. It is possible in this way to reduce the power consumption of the illuminated system, or to reduce the number of emitters or semiconductor laser bars. Furthermore, the more homogeneous intensity distribution leads to a better image contrast and permits the use of cameras that are more cost-effective in the case of digital image acquisition, for example.
It can be provided that the homogenizer means are of multistage design. It can be provided here in particular, that the number of stages of the homogenizer means for homogenizing with regard to the first direction is greater than that for homogenizing with regard to the second direction. Since the laser light has a substantially better collimatability with regard to the second direction, or with regard to the fast axis, one homogenizer stage for the fast axis proves to be sufficient as a rule. The use of one stage for the fast axis and two stages for the slow axis results in a substantially lower outlay on application than in the case of a completely two-stage homogenizer. The reason for this is that the spacing between the two homogenizers must be adjusted relative to one another only with regard to one axis, namely with regard to the slow axis. The spacing of the homogenizers can be optimally adapted in this way to the requirements with regard to the slow axis. Furthermore, there is a lowering of the requirements placed on the focal length tolerances of the lenses or the like used for the homogenizers.
It can be provided that the beam transforming means have a plurality of beam transforming elements arranged next to one another in the first direction. It can be provided here that the laser light emanating from one of the emitters impinges on more than one of the beam transforming elements. For example, the beam transforming elements can be designed here as cylindrical lenses whose cylinder axes are inclined at an angle of approximately 45° and/or −45° to the first direction.
There is also the possibility that the homogenizer means also have a plurality of homogenizer elements arranged next to one another in the first direction. The homogenizer elements can likewise be designed as cylindrical lenses here. There is a possibility that the center distance of the beam transforming elements relative to one another is not equal to the center distance of the homogenizer elements. The intensity distribution in the region of the surface to be illuminated can be homogeneously fashioned in this way.
It can be provided that the collimation means comprise fast-axis collimation means that serve to collimate the laser light emerging from the emitters with regard to the second direction. Furthermore, it can be provided that the collimation means have slow-axis collimation means that serve to collimate the laser light emerging from the emitters with regard to the first direction.
Furthermore, it can be provided that the spacing of the individual emitters from one another in the first direction is less than half, in particular less than one-tenth, of the extent of each of the emitters in the first direction. Furthermore, it can be provided that the semiconductor laser bar is designed as a QCW bar.
Further features and advantages of the present invention will become clear from the following description of preferred exemplary embodiments with reference to the attached figures, in which:
a shows a side view of an apparatus according to the invention;
b shows a side view, rotated by 90° with reference to
a shows a perspective view of the beam transforming means of the apparatus according to the invention;
b shows a schematic section of the line IIb-IIb in
a shows a detailed view of the laser diode bar, the fast-axis collimation means and the beam transforming means with exemplary component beams of the laser light; and
bshows a detailed view, rotated by 90° with reference to
Cartesian coordinate systems have been drawn in the figures for the sake of better clarity.
As is to be seen from
Sixty emitters, for example, are arranged next to one another and at a spacing from one another in the X-direction, the so-called slow-axis direction, in the case of typical QCW bars. The size of the emitting surfaces of the emitters can in this case be approximately 1 μm in the Y-direction, the so-called fast-axis direction, and approximately 150 μm in the X-direction. Here, the spacing between individual emitters in the X-direction can be approximately 10 μm. This corresponds to a center distance (pitch) of approximately 160 μm.
Furthermore, QCW bars are distinguished by a very long pulse duration in conjunction with high repetition frequency, the result being a duty cycle of up to 20%. The duty cycle reproduces the percentage fraction of time segments in which the emitter emits laser light. Typical pulse durations of a QCW bar are 150 μs in conjunction with a repetition frequency of 1 kHz. Maximum pulse durations of the QCW bars are approximately 500 μs. These properties give QCW bars their name, which indicates a quasi-continuous operation of the semiconductor laser bar.
The semiconductor laser bar 1 is illustrated solely schematically by a rectangle in
It may be seen from
Adjoining the fast-axis collimation means 2 in the direction of propagation Z are beam transforming means 3 that may be seen in detail from
Slow-axis collimation means 4 adjoin the beam transforming means 3 in the direction of propagation Z of the laser light such that it is possible to achieve a beam of 10 mm×10 mm with a divergence of approximately 11 mrad in the Y-direction, and a divergence of approximately 3 mrad in the X-direction. The numerical values of divergence and beam diameter relate to the full width of the beam at half the maximum intensity (FWHM). The slow-axis collimation means 4 are designed as a planoconvex cylindrical lens with a cylinder axis extending in the X-direction. Because of the rotation of the laser light in the beam transforming means 3, the slow-axis collimation means 4 therefore have the same alignment as the fast-axis collimation means 2. Just like the fast-axis collimation means 2, the slow-axis collimation means 4 can also be fashioned otherwise. In particular, both the entrance and exit surfaces can be provided with a convex and/or concave curvature.
Adjoining the slow-axis collimation means 4 in the direction of propagation Z are first homogenizer means 5 that are adjoined, in turn, by second homogenizer means 6. The homogenizer means 5 have on their entrance surface an array of cylindrical lenses whose cylinder axes extend in the X-direction. Furthermore, the first homogenizer means have on their exit surface an array of cylindrical lenses whose cylinder axis extend in the Y-direction. Owing to the cylindrical lens arrays, arranged crosswise with one another, on the entrance and exit surfaces of the first homogenizer means, the laser light passing through the first homogenizer means 5 is superposed very effectively on one another both in the slow-axis direction and in the fast-axis direction or both in the X-direction and in the Y-direction. A homogenization of the laser light can be achieved through this effective superposition, which is illustrated in
The apparatus includes second homogenizer means 6 in the direction of beam propagation Z downstream of the first homogenizer means. On their entrance and/or exit surfaces, these second homogenizer means 6 have a cylindrical lens array with cylindrical lenses that extend in Y-direction. The overall result is that the laser light is homogenized in two stages, the second stage acting only on the slow axis, and the first stage acting both on the slow axis and on the fast axis.
The reference numeral 7 denotes the laser light 7 that emerges from the apparatus according to the invention in a fashion collimated and homogenized as far as possible and which can be used to illuminate a surface remote from the apparatus.
An embodiment of the beam transforming means 3 may be seen from
T=2Fn.
Here, T is the depth of the beam transforming means 3 designed as cylindrical lens array, and Fn is the focal length of each of the biconvex cylindrical lenses in conjunction with a refractive index n of the selected material of the beam transforming means 3. Visible from
It is to be seen from
Before their entrance into the beam transforming means 3, the component beams emerging from individual emitters overlap in the apparatus according to the invention. After the passage through the beam transforming means 3, only a residual divergence with limited diffraction is present in the X-direction, whereas the divergence in the Y-direction corresponds to the original divergence in the X-direction of, for example, approximately 160 mrad.
The beam path of the laser light through the fast-axis collimation means 2 and the beam transforming means 3 may be seen in
A further overlapping of the component beams emerging from the individual emitters is prevented because of the exchange of the divergences of the slow axis and fast axis in the beam transforming means 3. It is thereby possible for the spacing between the beam transforming means 3 and the slow-axis collimation means 4 to be selected to be very large so that the collimation by the slow-axis collimation means 4 can be performed at a very long focal length of the cylindrical lens used therefor. The result of this is a larger beam diameter in the Y-direction (see
Number | Date | Country | Kind |
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10 2004 034 253.9 | Jul 2004 | DE | national |