1. Technical Field
The present invention relates to sensing circuits in general, and in particular to charge amplifier circuits. Still more particularly, the present invention relates to an apparatus for reducing offset voltage drifts in a charge amplifier circuit.
2. Description of Related Art
Referring now to the drawings and in particular to
The capacitance C1 of capacitor 14 determines the voltage at output V0 for a given amount of charges generated by piezoelectric sensor 11. Due to the input bias/offset current ib, a resistor 13 is utilized to drain the accumulated charges on capacitor 14. With resistor 13, operational amplifier 12 acts as a high-pass filter with a low-frequency cutoff at 1/(2πR1C1) where R1 is the resistance of resistor 13, and C1 is the capacitance of capacitor 14.
Because capacitor 14 requires a relatively small capacitance C1 to achieve a reasonable output voltage, one problem with charge amplifier circuit 10 is that the resistance R1 of resistor 13 must be very large in order to achieve a reasonable low-frequency cutoff. The input bias/offset current ib of operational amplifier 12 flowing over resistor 13 can cause a significant DC offset at output V0. In addition, the change in the input bias/offset current ib over temperature can also result in a significant offset drift at output V0. Even when using a JFET operational amplifier having an input bias/offset current and drift (per degree Celsius) in the pico range, the DC offset and offset drift (per degree Celsius) at output V0 can end up being in the milli range, which is unacceptably high for most, if not all, precision applications. Consequently, it would be desirable to provide an apparatus for reducing offset voltage drifts at the outputs of charge amplifier circuits.
In accordance with a preferred embodiment of the present invention, an apparatus for reducing offset voltage drifts in a charge amplifier circuit includes a charge amplifier circuit and a bias current compensation circuit. The bias current compensation circuit supplies bias current to lower any offset voltage drift at the output of the charge amplifier.
All features and advantages of the present invention will become apparent in the following detailed written description.
The invention itself, as well as a preferred mode of use, further objects, and advantages thereof, will best be understood by reference to the following detailed description of an illustrative embodiment when read in conjunction with the accompanying drawings, wherein:
With reference now to
Any voltage change at node VC, through negative feedback, counteracts and limits the (low-frequency) voltage change at output V0. Thus, any DC offset caused by input bias/offset current will be attenuated by the loop gain 1+R1/R2, where R1 is the resistance of resistor 23 and R2 is the resistance of resistor 25. The voltage level shifting of node VC causes most of the bias current to flow through resistor 25 that has a much lower resistance value than that of resistor 23.
The offset voltage caused by an input bias current ib2 (to operational amplifier 29) flowing through resistor 26 adds to the DC offset in output V0, but the total offset voltage due to the bias current ib2 will be significantly less than that of charge amplifier circuit 10 from
If the cutoff frequency of a low-pass filter formed by resistor 26 and capacitors 27-28 is significantly higher than the rate of change of input signals to operational amplifier 22, then node VC will track the offset drift of the voltage at output V0 while supplying most of the input bias current ib1 for operational amplifier 22 via resistor 25. On the other hand, if the cutoff frequency of the low-pass filter formed by resistor 26 and capacitors 27-28 is significantly lower than the rate of change of input signals to operational amplifier 22, then node VC will not change much in response to the input signals to operational amplifier 22, and will not distort the output of operational amplifier 22.
Basically, charge amplifier circuit 20 becomes a second order high-pass filter circuit after the addition of bias current compensation circuit 30. The low-frequency cutoff of such high-pass filter is slightly less than 1/(2πR1C1), where R1 is the resistance of resistor 23, and C1 is the capacitance of capacitor 24, and rolls off at a −40 dB per decade rate as the frequency of input signals to operational amplifier 22 approaches zero.
With operational amplifier 22 being a JFET device, and resistor 23 being in the gigaohm range, input bias current ib1 at room temperature (approximately 25° C.) has roughly the same effect on DC offset as the offset voltage. At room temperature, bias current compensation circuit 30 only has a moderate effect on the total DC offset on charge amplifier circuit 20. But since the bias current in a JFET device doubles for every ten degree Celsius rise in temperature, virtually all of the DC offset will be caused by the effect of input bias current at higher temperatures. At higher temperatures, bias current compensation circuit 30 can reduce the DC offset by a factor approaching the ratio of R1/(R2+R3), where R1 is the resistance of resistor 23, R2 is the resistance of resistor 25 and R3 is the resistance of resistor 26.
The choice of values for the discrete components within bias current compensation circuit 30 involves making a reasonable tradeoff among DC offset/offset drift, stability and noise gain. To ensure stability, the total loop gain at the high-pass filter cutoff frequency (which is defined by resistor 23 and capacitor 24) must be less than 1, since the phase shifts from −90° to −180° at this point. In order to keep the loop gain less than 1, the attenuation of the low-pass filter (which is defined by resistor 25 and capacitors 27-28) must be greater than the gain introduced by R1/R2, where R1 is the resistance of resistor 23, and R2 is the resistance of resistor 25. This places an upper limit on the high-pass filter cutoff frequency, which in turn limits the rate of offset drift that can be effectively canceled by bias current compensation circuit 30.
For charge amplifier circuit 20, if the resistance R1 of resistor 23=1.1 GΩ, and the resistance R2 of resistor 25=5.76 MΩ, then R1/R2=191. So the attenuation of the low-pass filter should be at least −45.6 dB ( 1/191) at 2.1 Hz (1/(2πR1C1), where C1 is the capacitance of capacitor 24). The gain of the low-pass filter at 2.1 Hz is:
which equals to 1/334 or −50 dB, where R3 is the resistance of resistor 26=5.76 MΩ, C2 is the capacitance of capacitor 27=2.2 μF, and C3 is the capacitance of capacitor 28=2.2 μF. The gain margin is then −50 dB −(−45.6 dB)=−4.4 dB.
In addition, the gain of the low-pass filter at 1.2 Hz is:
which equals to 1/191. This equals to R1/R2, so the total loop gain is 1 at 1.2 Hz. At this frequency, the phase margin is:
180°−90°−tan−1(2π·1.2·R1C1)
which equals to 61°.
The combination of resistors 23 and 25 acts as an amplifier for noise at the output of operational amplifier 22 having a gain of R1/R2. This places a lower limit on the value of resistor 25. The peak noise gain R1/R2 occurs at the cutoff frequency of the high-pass filter formed by resistor 23 and capacitor 24.
The value of the DC offset at the output V0 of operational amplifier 22 is approximately equal to:
R2·ib1+R3·ib2+Vos1+Vos2
where ib1 is the bias current to operational amplifier 22, ib2 is the bias current to operational amplifier 29, Vos1 is the offset voltage of operational amplifier 22, and Vos2 is the offset voltage of operational amplifier 29. So by reducing the resistances of resistors 25 and 26, both the DC offset and offset drift can be reduced, but possibly at the expense of noise gain and/or stability.
With reference now to
As has been described, the present invention provides an apparatus for reducing offset voltage drifts in a charge amplifier circuit.
While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
The present invention was made with United States Government support under contract number 03-009019-47236. The United States Government has certain rights in the present invention.
Number | Name | Date | Kind |
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7049729 | Kashiwase et al. | May 2006 | B2 |
20020125943 | Yamashita | Sep 2002 | A1 |
Number | Date | Country | |
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20070296496 A1 | Dec 2007 | US |